E

C

G

n-channel

FeaturesFeaturesFeaturesFeaturesFeatures• UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3• Industry standard TO-220AB package

• Generation 4 IGBTs offer highest efficiency available• IGBTs optimized for specified application conditions• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs

Benefits

Parameter Min. Typ. Max. UnitsRθJC Junction-to-Case ------ ------ 0.77RθCS Case-to-Sink, flat, greased surface ------ 0.50 ------ °C/WRθJA Junction-to-Ambient, typical socket mount ------ ------ 80Wt Weight ------ 2 (0.07) ------ g (oz)

Absolute Maximum Ratings

Parameter Max. UnitsVCES Collector-to-Emitter Voltage 600 VIC @ TC = 25°C Continuous Collector Current 40IC @ TC = 100°C Continuous Collector Current 20 AICM Pulsed Collector Current 160ILM Clamped Inductive Load Current 160VGE Gate-to-Emitter Voltage ±20 VEARV Reverse Voltage Avalanche Energy 15 mJPD @ TC = 25°C Maximum Power Dissipation 160PD @ TC = 100°C Maximum Power Dissipation 65TJ Operating Junction and -55 to +150TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)

Thermal Resistance

VCES = 600V

VCE(on) typ. = 1.72V

@VGE = 15V, IC = 20A

4/17/2000

W

TO-220AB

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Notes:

Repetitive rating; VGE = 20V, pulse width limited bymax. junction temperature. ( See fig. 13b )

VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,(see fig. 13a)

Repetitive rating; pulse width limited by maximumjunction temperature.

Pulse width ≤ 80µs; duty factor ≤ 0.1%.

Pulse width 5.0µs, single shot.

Parameter Min. Typ. Max. Units ConditionsQg Total Gate Charge (turn-on) ---- 100 150 IC = 20AQge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8Qgc Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15Vtd(on) Turn-On Delay Time ---- 34 ---- TJ = 25°Ctr Rise Time ---- 19 ---- ns IC = 20A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 10Ωtf Fall Time ---- 120 180 Energy losses include "tail"Eon Turn-On Switching Loss ---- 0.32 ----Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14Ets Total Switching Loss ---- 0.67 1.0td(on) Turn-On Delay Time ---- 30 ---- TJ = 150°C,tr Rise Time ---- 19 ---- ns IC = 20A, VCC = 480Vtd(off) Turn-Off Delay Time ---- 220 ---- VGE = 15V, RG = 10Ωtf Fall Time ---- 160 ---- Energy losses include "tail"Ets Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14LE Internal Emitter Inductance ---- 7.5 ---- nH Measured 5mm from packageCies Input Capacitance ---- 2100 ---- VGE = 0VCoes Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7Cres Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units ConditionsV(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µAV(BR)ECS Emitter-to-Collector Breakdown Voltage 18 ---- ---- V VGE = 0V, IC = 1.0A∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mAVCE(on) Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V

---- 2.15 ---- V IC = 40A---- 1.7 ---- IC = 20A, TJ = 150°C

VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µAgfe Forward Transconductance 11 18 ---- S VCE = 100V, IC = 20A

---- ---- 250 VGE = 0V, VCE = 600VICES Zero Gate Voltage Collector Current ---- ---- 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C

---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°CIGES Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

See Fig. 2, 5

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Fig. 1 - Typical Load Current vs. Frequency(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

Fig. 2 - Typical Output CharacteristicsTC = 25°C

Fig. 3 - Typical Transfer Characteristics

1

1 0

1 0 0

1 0 0 0

4 6 8 1 0 1 2

CI ,

Col

lect

or-t

o-E

mitt

er C

urr

ent

(A)

G E

T = 2 5 °C

T = 1 5 0 °C

J

J

V , G a te -to -E m itte r V o lta g e (V )

A

V = 1 0 V5µ s P U L S E W ID T H

C C

1

1 0

1 0 0

1 0 0 0

0.1 1 1 0

CE

CI

, C

olle

ctor

-to-

Em

itter

Cur

rent

(A

)

V , Collector-to-Emitter Voltage (V)

T = 150°C

T = 25°C

J

J

V = 15V20µs PULSE WIDTH

G E

A

0

1 0

2 0

3 0

4 0

5 0

6 0

0.1 1 1 0 1 0 0

f, Frequency (kHz)

A

6 0 % o f ra te d vo l ta g e

I

Id e a l d io de s

S q u are wave :

F o r b o th :

D u ty cyc le : 50%T = 125 °CT = 90°CG ate d rive as spec ified

s inkJ

T r ia n g u la r w a ve :

I

C la m p vo l ta g e :8 0 % o f ra te d

Po w e r D is s ip a t io n = 2 8 W

Load

Cur

rent

( A

)

4 www.irf.com

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig. 5 - Collector-to-Emitter Voltage vs.Junction Temperature

Fig. 4 - Maximum Collector Current vs. CaseTemperature

1.0

1.5

2 .0

2 .5

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

CE

V

,

Col

lect

or-t

o-E

mitt

er V

olta

ge (

V) V = 15V

80µs PULSE WIDTHG E

A

I = 40A

I = 20A

I = 10A

T , Junction Temperature (°C)J

C

C

C

0.01

0 .1

1

0 .00001 0 .0001 0 .001 0 .01 0 .1 1 10

t , Rectangular Pulse Duration (sec)1

thJC

D = 0 .50

0.01

0.02

0 .05

0.10

0.20

SIN GLE P ULSE(TH ER MA L R E SP ONS E )T

herm

al R

espo

nse

(Z

)

P

t 2

1t

DM

N otes: 1 . D u ty fac to r D = t / t

2 . P ea k T = P x Z + T

1 2

J D M thJC C

0

1 0

2 0

3 0

4 0

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0

Max

imum

DC

Col

lect

or C

urre

nt (

A)

T , Case Temperature (°C)C

V = 15V G E

A

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Fig. 9 - Typical Switching Losses vs. GateResistance

Fig. 8 - Typical Gate Charge vs.Gate-to-Emitter Voltage

Fig. 7 - Typical Capacitance vs.Collector-to-Emitter Voltage

0

1 0 0 0

2 0 0 0

3 0 0 0

4 0 0 0

1 1 0 1 0 0

CE

C, C

apa

cita

nce

(pF

)

V , Collector-to-Em itter V oltage (V)

A

V = 0V , f = 1M HzC = C + C , C S HO RTE DC = CC = C + C

G Eies ge gc ceres gcoes ce gc

C ies

C res

C oes

0

4

8

1 2

1 6

2 0

0 2 0 4 0 6 0 8 0 1 0 0 1 2 0

GE

V

, G

ate

-to

-Em

itter

Vol

tage

(V

)

gQ , To ta l G a te C h a rg e (n C )

A

V = 4 0 0V I = 20 A

C E

C

0.1

1

1 0

-60 -40 -20 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0

Tot

al S

witc

hing

Los

ses

(mJ)

R = 10Ω V = 15V V = 480V

A

I = 40A

I = 20A

I = 10A

G

G E

C C

C

C

C

T , Junction Temperature (°C)J

0.6

0.7

0 .8

0 .9

1 .0

1 .1

0 1 0 2 0 3 0 4 0 5 0 6 0

G

Tota

l Sw

itchi

ng L

osse

s (m

J)

R , Gate Resistance ( Ω)

A

V = 480V V = 15V T = 25°C I = 20A

C C

G E

J

C

Fig. 10 - Typical Switching Losses vs.Junction Temperature

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Fig. 12 - Turn-Off SOAFig. 11 - Typical Switching Losses vs.Collector-to-Emitter Current

0.0

1.0

2 .0

3 .0

4 .0

0 1 0 2 0 3 0 4 0 5 0

C

Tot

al S

witc

hing

Los

ses

(mJ)

R = 10Ω T = 150°C V = 480V V = 15V

I , Collector-to-Emitter Current (A)

A

G

JC C

G E

1

10

100

1000

1 10 100 1000

C

C E

G E

V , Collecto r-to-Em itter Voltage (V )

I ,

Col

lect

or-to

-Em

itter

Cur

rent

(A)

S A FE O P E R A TING A RE A

V = 20V T = 125 °C

G EJ

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480V4 X IC@25°C

D.U.T.

50V

L

V *C

* Dr iver sam e type as D .U .T.; Vc = 80% of V ce(m ax)* Note: D ue to the 50V pow er supply, pulse w idth and inductor w ill increase to obta in ra ted Id.

1000V

Fig. 13a - Clamped InductiveLoad Test Circuit

Fig. 13b - Pulsed CollectorCurrent Test Circuit

480µF960V

0 - 480V

RL =

t=5µsd (o n)t

t ft r

90%

td(o ff)

10%

90%

10%5%

VC

IC

E o n E o ff

ts o n o ffE = (E +E )

Fig. 14b - Switching LossWaveforms

50V

D river*

1000V

D.U.T.

IC

CV

LFig. 14a - Switching Loss

Test Circuit

* Driver same type as D.U.T., VC = 480V

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0.55 (.022)0.46 (.018)

3 X

2.92 (.115)2.64 (.104)

1.32 (.052)1.22 (.048)

- B -4 .69 (.185)4.20 (.165)

3.78 (.149)3.54 (.139)

- A -

6 .47 (.255 )6.10 (.240 )

1.15 (.045) M IN

4.06 (.160 )3.55 (.140 )

3 X 3.96 (.160)3.55 (.140)

3 X0.93 (.037)0.69 (.027)

0 .36 (.014) M B A M

10.54 (.415)10 .29 (.405)2 .87 (.113)

2 .62 (.103)

15 .24 (.600)14 .84 (.584)

14 .09 (.555)13 .47 (.530)

1 .40 (.055)1 .15 (.045)3 X

2 .54 (.100)

2X

1 2 3

4

CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M i llim e te rs a nd (In c he s )

L E A D A S S IG N M E N T S 1 - G A TE 2 - C O L LE C TO R 3 - EM IT TE R 4 - C O L LE C TO R

N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N TR O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E TE R S (IN C H ES ). 4 C O N FO R M S TO JE D E C O U TL IN E T O -2 2 0 AB .

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000

IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086

IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936

Data and specifications subject to change without notice. 4/00