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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-1 Lecture 22 - Multistage Amplifiers (II) DC Voltage and Current Sources November 29, 2005 Contents: 1. DC voltage sources 2. DC current sources and sinks Reading assignment: Howe and Sodini, Ch. 9, §§9.4

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6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-1

Lecture 22 - Multistage Amplifiers (II)

DC Voltage and Current Sources

November 29, 2005

Contents:

1. DC voltage sources

2. DC current sources and sinks

Reading assignment:

Howe and Sodini, Ch. 9, §§9.4

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-2

Key questions

• How does one synthesize voltage and current sources?

• How can this be done in an economic way?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-3

1. DC voltage sources

2 Features of voltage source:

• A well controlled voltage

• voltage does not depend on current drawn from source (low internal resistance).

I-V characteristics of voltage source:

I

ideal real

0 0 VS V

Equivalent circuit model of voltage source:

RS

Vs +

-

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-4

2 Consider MOSFET in ”diode configuration”:

ID ID

VGS=VT

VGS

+

+

VDS

VGS −

0 0 VT VDS

I-V characteristics:

W ID = µCox(VGS − VT )

2 = W

µCox(VDS − VT )2

2L 2L

Beyond threshold, MOSFET looks like ”diode” with quadratic I-V characteristics.

√ √ √ √ √ √

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-5

2 How does one synthesize a voltage source with this?

Assume a current source is available.

i

iOUT

VDD

iD

IREF

+

vOUT vOUT

OUT

-IREF

VT 0

VGS = VDS takes value needed to sink current:

W ID = IREF + iOU T = µCox(vOU T − VT )

2

2L

Then:

W iOU T = µCox(vOU T − VT )

2 − IREF 2L

Solving for vOU T :

IREF + iOU T vOU T = VT + √ W

2LµCox

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-6

vOU T is function of IREF and W/L of MOSFET:

• IREF ↑ ⇒ vOU T ↑

• W/L ↑ ⇒ vOU T ↓

W/L

VTVT

vOUTvOUT

iOUTiOUT

−IREF

IREF

−IREF1

−IREF2

2 Small-signal view of voltage source:

+ +

--

vgs vt

it

gmvgsro

D G

S

1 1 Rout = //ro

gm gm

Rout is small (good!).

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-7

2 PMOS voltage source:

VDD

+

iOUT

VOUTIREF

Same operation and characteristics as NMOS voltage source.

PMOS needs to be bigger to attain same Rout.

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-8

2. DC current sources and sinks

2 Features of current source:

• A well controlled current,

• supplied current does not depend on voltage across (high internal resistance)

I-V characteristics of current source:

I

real Is

ideal

0 0 V

Equivalent circuit model of current source:

Is RS

ent mirror

( )

( )

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-9

2 Connect voltage source to another MOSFET:

VDD

IREF iOUT

M1 M2+

VREF

+

vOUT

⎞1

⎛ W ⎜ ⎟IOU T ⎝ ⎠ µCox(VREF − VT )

2

2 L 2

⎛ ⎞1 W ⎜ ⎟IREF ⎝ ⎠ µCox(VREF − VT )

2

2 L 1

Then: W L 2IOU T = IREF W L 1

IOU T scales with IREF by W/L ratios of two MOSFETs circuit).

Well ”matched” transistors important.

(curr( current mirror

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-10

• Small-signal view of current source:

+ +

--

vgs2 vt

it

gm2vgs2 ro2gm1 1

Rout = ro2

I-V characteristics of NMOS current source:

1/ro2

iOUT

vOUT

(W/L)2 (W/L)1

IREF

VDSSAT2

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-11

PMOS current source

• NMOS current source sinks current to ground.

• PMOS current source sources current from positivesupply.

PMOS current mirror:

VDD

IREF

M1

iOUT

M2

sinks

ourcessso

( )

( )

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-12

2 Multiple current sources

Since there is no DC gate current in MOSFET, can tie up multiple current mirrors to single current source:

VDD

MR M3

iOUT2iOUT1 iOUT3

M1 M2

IREF

W L nIOUT n = IREF W L R

Similar idea with NMOS current sinks:

VDD

IREF iOUT1 iOUT2 iOUT3

MR + M3M2M1VREF

( )

( )

( )

( )

( ) ( ) ( )

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-13

2 Multiple current sources and sinks

Often, in a given circuit, we need current sources andsinks. Can build them all out of a single current source:

VDD

IREF

MR

M1 M2

M4M3

iOUT1 iOUT2

iOUT4

W L 1IOUT 1 = IREF W L R

W L 2IOUT 2 = IREF W L R

W W W L 4 L 1L 4 ( ) = IREF ( ) ( )IOUT 4 = IOUT 1 W W W L 3 L RL 3

√ √ √

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-14

2 Generating IREF :

Simple circuit:

VDD

R

VOUT

IREF

+

IREF = VDD−VOU T R

VOU T = VT + √ WIREF

2LµCox

For large W/L, VOU T → VT :

VDD − VTIREF

R

• Advantages:

– IREF set by value of resistor.

• Disadvantages:

– VDD also affects IREF . – VT and R are function of temperature ⇒ IREF (T ).

In real world, more sophisticated circuits used to generate IREF that are VDD and T independent.

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-15

2 Can now understand more complex circuits.

Examples:

+2.5 V

−2.5 V

IREF

VBIAS

vs

RS M1

M2M3 vOUT

+

+ −

+ −

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-15

2 Can now understand more complex circuits.

Examples:

+2.5 V

IREF

VBIAS

vs

RS M1

M2M3 vOUT

+

+ −

+ −

−2.5 V

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-16

2.5 V

−2.5 V

IREF M1

M2M3

RL

RS

Vs

VBIAS + −

+ −

vOUT

+

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-16

2.5 V

−2.5 V

IREF M1

M2M3

RL

RS

Vs

VBIAS + −

+ −

+

vOUT

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-17

+2.5 V

−2.5 V

iOUT

VBIAS

IREF

vs

RS

RL

Q1

M3 M2

+ −

+ −

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-17

+2.5 V

−2.5 V

iOUT

VBIAS

IREF

vs

RS

RL

Q1

M3 M2

+ −

+ −

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-18

+3 V

M1

M2M2B M4

M3

iOUT

VBIAS

vs

RS

RL6 kΩ

+ −

+ −

+

vOUT

−3 V

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-18

+3 V

M1

M2M2B M4

M3

vOUT

iOUT

+

VBIAS

vs

RS

RL6 kΩ

+ −

+ −

−3 V

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-19

+2.5 V

VBIAS

vs

RS

+ −

+ −

IREF

M2

M6

M5

M4

M3

Q1

Q2

vOUT

+

−2.5 V

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-19

+2.5 V

VBIAS

vs

RS

+ −

+ −

IREF

M2

M6

M5

M4

M3

Q1

Q2

vOUT

+

−2.5 V

Amp stages:

What does it do?

6.012 - Microelectronic Devices and Circuits - Fall 2005 Lecture 22-20

Key conclusions

• Voltage source easily synthesized from current source using MOSFET in diode configuration.

• Current source easily synthesized from current source using current mirror circuit.

• Multiple current sources and sinks with different mag-nitudes of current can be synthesized from a single current source.

• Voltage and current sources rely on availability of well ”matched” transistors in IC technology.