demonstration board for stdrive601 triple gate driver · features • high voltage rail up to 600v...

Features

• High voltage rail up to 600V• Driver supply input voltage range 9V-20V• STGD6M65DF2 IGBTs power stage featuring:

– V(BR)CES = 650 V– VCE(sat) = 1.55 V @ IC = 6 A

• Dual footprint for IGBT/MOSFET package:– DPAK– PowerFlat 8x8

• Selectable single or 3-shunt current sensing topology:– Sensored or sensorless BEMF detection– FOC or 6-Step algorithm

• SmartShutdown overcurrent protection• Hall effect sensors connector• Bus voltage sensing• 450V bulk capacitor• Connector for interfacing with MCU• RoHS compliant

Application

• Three-phase motor drives• Fans• Pumps• Refrigerator compressors• Industrial inverters• Appliances

DescriptionThe EVALSTDRIVE601 demonstration board is a complete 3-phase inverter whichallows evaluating all of the STDRIVE601 features. The power stage featuresSTGD6M65DF2 IGBTs, but can be populated with any IGBT or power MOSFET inDPAK or powerFLAT 8x8 HV package. The board is designed to support a threeshunt or a single shunt current sensing topology.

A strip connector allows an easy interfacing with MCU control.

The STDRIVE601 is a 600V gate driver device manufactured with BCD6s offlinetechnology. It is a single-chip with three half-bridge gate drivers for N-channel powerMOSFETs or IGBTs suitable for 3-phase applications.The device integrates threebootstrap diodes and a smart shutdown feature able to detect very fast overcurrentcondition, minimizing the propagation delay between the overcurrent event and theoutput switch-off.

Product status link

EVALSTDRIVE601

Demonstration board for STDRIVE601 triple gate driver

EVALSTDRIVE601

Data brief

DB3896 - Rev 1 - May 2019For further information contact your local STMicroelectronics sales office.

www.st.com

https://www.st.com/en/product/evalstdrive601

https://www.st.com/en/product/evalstdrive601

1 Schematic diagram

Figure 1. EVALSTDRIVE601 schematic – Driver output stages

SGND

PGND

OD

CIN

TRIPLE SHUNT (default)

Overcurrent 5.5A VDD=3V3

GH

2

GL2

BOO

T1

BOO

T2

BOO

T3

CIN

GL3

GH

3

GH

1

GL1

BOO

T2

BOO

T3

BOO

T1

CIN

SENSE3

SENSE1

SENSE2

VCC

HV

VCC

HV

HV

VCC

VDD

VCC

OU

T2

HIN

1H

IN2

HIN

3

LIN

1LI

N2

LIN

3

FAU

LT

OU

T3

OU

T1

ENAB

LE

SEN

SE1

SEN

SE2

SEN

SE3

SEN

SE1_

REF

SEN

SE2_

REF

SEN

SE3_

REF

C13

N.M

.TP17

Q5

STGD6M65DF2

1

2 3

C7

N.M

.

R27

100k

R60

4k7

Q6

STGD6M65DF2

1

2 3

C2

220n

F/25

V

Q4

STGD6M65DF2

1

2 3

C35

33pF

/25V

R21

100R

R24

1k

R8

27R

JP3

OPE

N

R18

10k

R19

10R

Q1

STGD6M65DF2

1

2 3

D6

BAT5

4J

TP16

D1

BAT5

4J

TP18

TP9

Q2

STGD6M65DF2

1

2 3

TP8

TP29

TP30

R14

47k

R11

10R R26

100R

R23

100k

R9

100R

R25

10R

D9

BAT5

4J

R7

10R

D5

BAT5

4J

TP6

R5

27R

D2

N.M

.

+ -

U2B

TSV9

12IQ

2T5

76

R62

0R

TP7

R15

10RR12

100R

D3

N.M

.

R58220m/ 2W/ 1%

TP11R

6 0R

TP12

TP22

R22

1k

TP10 JP

2

OPE

N

D7

BAT5

4J

C6

470n

F/50

V

TP3

C10

47nF

/25V

R3

100R

Q3

STGD6M65DF2

1

2 3

R61

10k

C3

220n

F/25

V

C9

N.M

.

D8

BAT5

4J

R1

10R

R10

100k

R20

1k

TP21

C1

N.M

.

R16

100R

TP5

R30220m/ 2W/ 1%

TP13

C5

470n

F/50

V

R4

100k

R17

100k

R63

N.M

.

R2

27R

D4

N.M

.

C8

470n

F/50

V

R13

100k

C11

1nF/

25V

TP19

TP15

C4

N.M

.

U1

STD

RIV

E601

D

EN10

VCC

1

FAU

LT8

PGN

D13

BOO

T128

OU

T126

BOO

T224

OD

11C

IN9

HIN

12

SGN

D12

LVG

314

HVG

127

HVG

223

OU

T222

BOO

T320

HVG

319

OU

T318

HIN

23

HIN

34

LIN

15

LIN

26

LIN

37

LVG

215

LVG

116

TP1

TP20

R57220m/ 2W/ 1%

C12

N.M

.

TP4

TP14

EVALSTDRIVE601Schematic diagram

DB3896 - Rev 1 page 2/10

Figure 2. EVALSTDRIVE601 schematic – feedback network

HIGH VOLTAGE

SECTION

VCC_E

min

9V m

ax 2

0V

VCC_E

VDD_E

SGND

OUT3

OUT2

OUT1

HV PGND

VDD_E

3V3

PWM_HIN1

PWM_LIN1

PWM_HIN2

PWM_LIN2

PWM_HIN3

PWM_LIN3

SENSE_3

SENSE_2

SENSE_1

FAULT

ENABLE

VDD

6ste

p R45,R50,R55

D.N.M.

DEFAULT

CONFIGURATION

F.O.C. 3

shunt

VCC=

15

JP3

closed (VDD=3V3)

VBUS

A+/H1

B+/H2

Z+/H3

Udd

GND

HALL power

Pha

seV

_H

Pha

seV

_L

Pha

seW

_H

Pha

seW

_L

Pha

seU

_L

Pha

seU

_H

SE

NS

E_2

SE

NS

E_3

SE

NS

E_1

SE

NS

E_O

UT2

SE

NS

E_O

UT3

SE

NS

E_O

UT1

SE

NS

E_O

UT1

SE

NS

E_O

UT2

SE

NS

E_O

UT3

VB

US

_fdb

k

FAU

LTP

hase

U_H

Pha

seU

_LP

hase

V_H

Pha

seV

_LP

hase

W_H

Pha

seW

_LS

EN

SE

_1S

EN

SE

_2S

EN

SE

_3

EN

C_H

ALL

_C

HAL

L_BE

MF_

AH

ALL_

BEM

F_B

HAL

L_BE

MF_

C

EN

C_H

ALL

_B

EN

C_H

ALL

_A

HAL

L_BE

MF_

A

BE

MF_

C

EN

C_H

ALL

_A

EN

C_H

ALL

_B

HA

LL_B

EM

F_B

EN

C_H

ALL

_C

HA

LL_B

EM

F_C

BE

MF_

B

BE

MF_

A

BE

MF_

C

E5V

GPI

O_B

EMF

GP

IO_B

EM

F

BE

MF_

A

BE

MF_

B

GP

IO_B

EM

F

GP

IO_B

EM

F

SE

NS

E_O

UT2

CP

OU

T

CPO

UT

CU

RR

ENT_

REF

CU

RR

ENT_

REF

E5V

VC

C

VD

D

VD

D

VD

DV

DD

VD

D

VD

DV

DD

VD

D

HV

HV

VD

D

VD

D

VD

D

VD

D

VC

C

VD

D

VD

D

VD

D

VD

D

VD

D

HIN

1

LIN

1

HIN

2

LIN

2

HIN

3

LIN

3

OU

T1

OU

T2

OU

T3

FAU

LT

EN

AB

LE

SE

NS

E3

SE

NS

E2

SE

NS

E1

SE

NS

E1_

RE

F

SE

NS

E3_

RE

F

SE

NS

E2_

RE

F

OU

T1

OU

T2

OU

T3

R35 1k

+C

2110

uF/2

5VD

10B

ZT52

C3V

3

R69

20k

R76

1k8

R94

180k

R54

1k8

C36

N.M

.

TP31

TP26

R98

180k

R80

10k

C47

100n

F/25

V

D21

BA

T54J

R83

N.M

.

J61 2 3 4 5

D26

DA

2JF8

100L

R45

20k

J2

123

C31

100n

F/25

V

C22

33pF

/25V

R71

3R3

R85

0R

C18

33pF

/25V

C45

4.7p

F/50

V

R49 1k

8

R88

180k

TP23

C46

4.7p

F/50

V

J31 2 3

R41

1k8

JP20

CLO

SE

D 1

-2

13

2

R65

470k

JP17

CLO

SE

D

C37

N.M

.

R32 1k

R42

10k

R55

20k

C16

33nF

/630

V

C34

68uF

/450

V

R11

4

33k

R39 47

k

TP32

C42

100n

F/25

V

R70

20k

R77

1k8

R37 1k

+ -U

2A

TSV

912I

Q2T

31

48

2

C44

4.7p

F/50

V

+ -U

3A

TSV

912I

Q2T

31

48

2

TP27

D11

BA

T54J

C38

N.M

.

R51

1k8

R50

20k

JP4

OP

EN

C17

33pF

/25V

C33

100n

F/25

V

C25

33pF

/25V

C40

10pF

/25V

J4

MO

TOR

CO

NN

.1 3 5 7 9 11 13 15 17 19 21 23 25

2 4 6 8 10 12 14 16 18 20 22 24 2627 29 31 33

28 30 32 34

C19

33pF

/25V

C29

33pF

/25V

TP24

D24

DA

2JF8

100L

R72

1K

R44

1k8

R59

3R3

R46

1k8

JP18

CLO

SE

D 1

-2

13

2

C48

4.7u

F/10

V

D20

BA

T54J

R40 1k

R52

10k

R67

1k

R11

510

M

R91

3.3k

R78

10k

R36

1K8

C15

N.M

.

D16

BA

T54J

+C

23

4u7F

/25V

C27

33pF

/25V

J11 2

R82

N.M

.

D17

BA

T54J

R34 1k

D25

DA

2JF8

100L

D18

BA

T54J

R73

1K

C50

100n

F/25

V

C23

A

N.M

.

D15

BA

T54J

R47

10k

TP28

C39

10pF

/25V

C24

33pF

/25V

D22

BA

T54J

R92

180k

C49

100n

F/25

V

R96

180k

C26

2.2p

F/25

V

R11

20R

C32

47nF

/25V

TP25

D23

BA

T54J

JP21

CLO

SE

D 2

-4

1 3

24

C21

AN

.M.

JP19

CLO

SE

D 1

-2

13

2R

84N

.M.

R68

20k

R75

1k8

R31 1k

R74

1K

JP1

CLO

SE

D

R79

10k

R66

6.49

kR

8618

0k

C30

2.2p

F/25

V

C20

33pF

/25V

J51 2 3 4 5 6 7 8 9 10 11 12 13

V+

+ -V-

U4

TS30

21IL

T

R93

1k

R97

1k

R95

3.3k

R64

470k

R99

3.3k

R11

30R

C41

10pF

/25V

+ -U3B

TSV

912I

Q2T

57

6

R38

47k

R11

7

0R

D19

BA

T54J

C28

2.2p

F/25

V

C14

33pF

/25V

R33 1k

C51

N.M

.

R87

1k

EVALSTDRIVE601Schematic diagram

DB3896 - Rev 1 page 3/10

2 Bill of material

Table 1. Bill of material – components common to all device variants

Reference Part Value Part Description Package

C1,C4,C7,C9,C12,C13,C36,C37,C38,C51 N.M. SMT ceramic capacitor Size 0603

C2,C3 220nF/25V SMT ceramic capacitor Size 0603

C5,C6,C8 470nF/50V SMT ceramic capacitor Size 0805

C10,C32 47nF/25V SMT ceramic capacitor Size 0603

C11 1nF/25V SMT ceramic capacitor Size 0603

C14,C17,C18,C19,C20,C22,C24,C25,C27,C29,C35 33pF/25V SMT ceramic capacitor Size 0603

C15 N.M. Film capacitor 4x13 mm, Pitch 10mm

C16 33nF/630V SMT multilayer capacitor Size 1210

C21A N.M. SMT ceramic capacitor Size 1206

C21 10uF/25V SMD aluminum elect.capacitor Size C

C23A N.M. SMT ceramic capacitor Size 0805

C23 4u7F/25V SMD auminum elect.capacitor Dim. 3.3x3.3 mm

C26,C28,C30 2.2pF/25V SMT ceramic capacitor Size 0603

C31,C33,C42,C47,C49,C50 100nF/25V SMT ceramic capacitor Size 0603

C34 68uF/450V THT electrolytic capacitor,radial p7.5 d18h25

Diam. 18 mm, pitch7.5 mm

C39,C40,C41 10pF/25V SMT ceramic capacitor Size 0603

C44,C45,C46 4.7pF/50V SMT ceramic capacitor Size 0603

C48 4.7uF/10V SMT ceramic capacitor Size 0805

D1,D5,D6,D7,D8,D9,D11,D15,D16,D17,D18,D19,D20,D21,D22,D23 BAT54J 40V, 300mA small signal

Schottky SMT Diode SOD-323

D2,D3,D4 N.M. Turbo 2 ultrafast high-voltagerectifier SMA

D10 BZT52C3V3 Zener diode 3.3 V SOD-123

D24,D25,D26 DA2JF8100L 800V fast recovery diode SC-90A (SMini2-F5-B)

JP1,JP17 CLOSED SMT jumper Soldering pad

JP2,JP3 OPEN SMT jumper Size 0805

JP4 OPEN SMT jumper Soldering pad

JP18,JP19,JP20 CLOSED 1-2 SMT jumper Soldering pad

JP21 CLOSED 2-4 SMT jumper Soldering pads

J1 MORSV-508-2P_screw

Connector terminal block T.H.2 positions 5.08 mm Pitch 5.08 mm


Terminal block T.H. 3positions, 5.08 mm Pitch 5.08 mm


Terminal block T.H. 3positions, 3.5 mm Pitch 3.5 mm

EVALSTDRIVE601Bill of material

DB3896 - Rev 1 page 4/10

Reference Part Value Part Description Package

J4 MOTOR CONN. Header Vertical Connector2x17 poles, pitch 2.54 mm 2x17 pins

J5 STRIP 1x13 Strip connector 13 pos, 2.54mm 1x13 pins

J6 STRIP 1x5 Strip connector 5 pos, 2.54mm 1x5 pins

Q1,Q2,Q3,Q4,Q5,Q6STGD6M65DF2 Trench gate field-stop IGBT,

M series 650V, 6A low loss DPAK

Alternative P.N D.N.M. equivalentPowerFLAT 8x8

R1,R7,R11,R15,R19,R25 10R SMT resistor Size 0805

R2,R5,R8 27R SMT resistor Size 0805


R4,R10,R13,R17,R23,R27 100k SMT resistor Size 0603


R14,R38,R39 47k SMT resistor Size 0603

R18,R42,R47,R52,R61,R78,R79,R80 10k SMT resistor Size 0603

R20,R22,R24,R31,R32,R33,R34,R35,R37,R40,R72,R73,R74 1K SMT resistor Size 0603

R30,R57,R58 220m/ 2W/ 1% SMT resistor Size 1210/2512

R36 1K8 SMT resistor Size 1206

R41,R44,R46,R49,R51,R54,R75,R76,R77 1k8 SMT resistor Size 0603


R59,R71 3R3 SMT resistor Size 0603

R60 4k7 SMT resistor Size 0603

R63,R82,R83,R84 N.M. SMT resistor Size 0603

R64,R65 470k SMT resistor Size 1206

R66 6.49k SMT resistor Size 0805

R67,R87,R93,R97 1k SMT resistor Size 0805


R91,R95,R99 3.3k SMT resistor Size 0603

R114 33k SMT resistor Size 0603

R115 10M SMT resistor Size 0603

TP1,TP3,TP4,TP5,TP6,TP7,TP8,TP9,TP10,TP11,TP12,TP13,TP14,TP15,TP16,TP17,TP18,TP19,TP20,TP21,TP22,TP23,TP24,TP25,TP26,TP27,TP28,TP31,TP32

TP for probe Diam. 1.27, Hole0.8mm

TP29 TP-ANELLO_1mm-ROSSO

Red bead terminal, diam.1.02mm

Diam. 2,54 , Hole1mm

TP30 TP-ANELLO_1mm-NERO

Black bead terminal, diam.1.02mm

Diam. 2,54 , Hole1mm

U2,U3 TSV912IQ2T Dual rail-to rail input/output 8MHz operational amplifiers DFN8 2x2

EVALSTDRIVE601Bill of material

DB3896 - Rev 1 page 5/10

3 Layout and component placements

Figure 3. EVALSTDRIVE601 – layout (component placement top view)

EVALSTDRIVE601Layout and component placements

DB3896 - Rev 1 page 6/10

Figure 4. EVALSTDRIVE601 – layout (top layer)


DB3896 - Rev 1 page 7/10

Figure 5. EVALSTDRIVE601 – layout (bottom layer)


DB3896 - Rev 1 page 8/10

Revision history

Table 2. Document revision history

Date Version Changes

29-May-2019 1 Initial release.

EVALSTDRIVE601

DB3896 - Rev 1 page 9/10

IMPORTANT NOTICE – PLEASE READ CAREFULLY

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EVALSTDRIVE601

DB3896 - Rev 1 page 10/10

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demonstration board for stdrive601 triple gate driver · features • high voltage rail up to 600v...

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