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1 Introduction of NVDC Technique Application Report SLUA412 – January 2007 Design of a Narrow VDC (NVDC) System Charger Voltage Regulator Using bq24721/30 Lingyin Zhao........................................................................................................ PMP Portable Power ABSTRACT Narrow VDC architecture is an emerging technique for notebook computer power supply systems with the potential advantages of lower cost and higher efficiency. This application report presents the typical application topologies and the detailed design of a narrow VDC system charger voltage regulator using the bq24721 or bq24730.The measurement results have been demonstrated and are discussed in this report. Contents 1 Introduction of NVDC Technique ................................................................. 1 2 NVDC System Architectures Using bq24721/30 ............................................... 3 3 Design Example .................................................................................... 7 4 Measurement Results .............................................................................. 9 List of Figures 1 Conventional Power Delivery Path in a Notebook Computer ................................. 2 2 NVDC Power Delivery Path in a Notebook Computer ......................................... 3 3 Typical bq24721 NVDC Application (Two Sense Resistors).................................. 4 4 Typical bq24721 NVDC Application (Three Sense Resistors)................................ 5 5 Typical bq24730 NVDC Application (Three Sense Resistors), [VI = 20 V, II(lim) = 4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]............................................. 6 6 Typical bq24730 NVDC Application (Two Sense Resistors), [VI = 20 V, II(lim) = 4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]............................................. 7 7 Efficiency Curves of a Regular Application Using bq24730 ................................. 10 8 Efficiency Curves of a NVDC Application Using bq24730 ................................... 10 9 System Load Transient Response – Conventional bq24730 Battery Management Circuit ............................................................................................... 11 10 System Load Transient Response - NVDC bq24730 Battery Management Circuit ...... 11 Power-path selection architecture has been adopted in most existing notebook computer battery management circuits. This configuration normally consists of a battery charger and a set of power-path selection switches, as illustrated in Figure 1. When the adapter is on, it is connected to the VDC node directly via the power-path switches Q1 and Q2. The VDC node is the input power from which all other power rails are derived. After the adapter is removed, the battery pack connects to the VDC node through Q3 and powers the DC/DC converters and system loads. Consequently, the VDC voltage varies between the lowest battery voltage and highest adapter voltage, normally about 8.7 V to 19 V. Intel is a trademark of Intel Corporation. SLUA412 – January 2007 Design of a Narrow VDC (NVDC) System Charger Voltage Regulator Using bq24721/30 1 Submit Documentation Feedback

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Page 1: Design of a Narrow VDC (NVDC) System Charger VR Using …application-notes.digchip.com/001/1-1501.pdf · 2009-02-08 · 3-sense-resistorNVDC charger VR using bq24721. If input current

1 Introduction of NVDC Technique

Application ReportSLUA412–January 2007

Design of a Narrow VDC (NVDC) System Charger VoltageRegulator Using bq24721/30

Lingyin Zhao........................................................................................................ PMP Portable Power

ABSTRACT

Narrow VDC architecture is an emerging technique for notebook computer powersupply systems with the potential advantages of lower cost and higher efficiency. Thisapplication report presents the typical application topologies and the detailed design ofa narrow VDC system charger voltage regulator using the bq24721 or bq24730.Themeasurement results have been demonstrated and are discussed in this report.

Contents1 Introduction of NVDC Technique ................................................................. 12 NVDC System Architectures Using bq24721/30 ............................................... 33 Design Example .................................................................................... 74 Measurement Results.............................................................................. 9

List of Figures

1 Conventional Power Delivery Path in a Notebook Computer................................. 22 NVDC Power Delivery Path in a Notebook Computer ......................................... 33 Typical bq24721 NVDC Application (Two Sense Resistors).................................. 44 Typical bq24721 NVDC Application (Three Sense Resistors)................................ 55 Typical bq24730 NVDC Application (Three Sense Resistors), [VI = 20 V, II(lim) =

4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]............................................. 66 Typical bq24730 NVDC Application (Two Sense Resistors), [VI = 20 V, II(lim) =

4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]............................................. 77 Efficiency Curves of a Regular Application Using bq24730 ................................. 108 Efficiency Curves of a NVDC Application Using bq24730 ................................... 109 System Load Transient Response – Conventional bq24730 Battery Management

Circuit ............................................................................................... 1110 System Load Transient Response - NVDC bq24730 Battery Management Circuit ...... 11

Power-path selection architecture has been adopted in most existing notebook computer batterymanagement circuits. This configuration normally consists of a battery charger and a set of power-pathselection switches, as illustrated in Figure 1. When the adapter is on, it is connected to the VDC nodedirectly via the power-path switches Q1 and Q2. The VDC node is the input power from which all otherpower rails are derived. After the adapter is removed, the battery pack connects to the VDC node throughQ3 and powers the DC/DC converters and system loads. Consequently, the VDC voltage varies betweenthe lowest battery voltage and highest adapter voltage, normally about 8.7 V to 19 V.

Intel is a trademark of Intel Corporation.

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Introduction of NVDC Technique

Figure 1. Conventional Power Delivery Path in a Notebook Computer

Narrow VDC (NVDC) is an initiative by Intel™ intended to increase notebook system efficiency bylowering the voltage range of the system load in notebook computers. The objective of the NVDCtechnique is to reduce power loss by reducing the voltage range of the VDC node. The voltage rangereduction is accomplished by replacing the battery charger circuit with a system charger voltage regulator(VR), as shown in Figure 2. The change from battery charger to system charger VR narrows the VDCrange. As a result, this enables DC/DC converter optimizations in the system and allows the removal ofthe power-path switch, saving additional power, board area, and cost. This technique is called the narrowVDC (NVDC) technique.

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2 NVDC System Architectures Using bq24721/30

NVDC System Architectures Using bq24721/30

Figure 2. NVDC Power Delivery Path in a Notebook Computer

The major advantages of NVDC configurations are:

1. It is possible to use 20-V power MOSFETs with lower RDSON and lower cost in the downstream DC-DCconverters.

2. Due to the narrower line variation range, the DC-DC converter design optimization is easier. Thisnormally leads to higher efficiency and better line transient response.

3. The MOSFET counts on the power path can be reduced, from 5 to 1 for single-pack system and 7 to 1for dual-pack system.

The potential disadvantages of NVDC configurations are:

1. Lower system voltage leads to a higher bus current which may increase the conduction losses of thecopper traces and compromise the power-loss saving by using lower voltage-rating devices.

2. The size, cost, and power dissipation of the charger may be higher because higher current-ratingMOSFETs and inductor have to be used.

3. A bad or deeply depleted battery pack clamps the system bus voltage even if the adapter is on. In thepath-selection configuration, the system functions as long as the adapter is on, no matter whether thebattery voltage is normal or not.

The bq24721/30 allows implementation of an NVDC charger. In NVDC, the adapter is not allowed toconnect to the system load. Instead, the system load is only connected to the output of the batterycharger. This ensures that the system load only detects the minimum-to-maximum voltage of the batterypack. Although this method of connecting the load directly to the battery pack has already been used forvarious other applications, the system approach to optimize efficiency and cost is making it more popular.In NVDC, the charger is required to process both charge current and system load at the same time;therefore, the power stage needs to be designed accordingly for the increase in total current. The selectorFETs are not needed. The converter current is different from the battery sense current; so, two outputsense resistors are needed. The SYNN and SYNP current sense pins allow sensing the converter current(for protection) independently of the battery charge current.

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ACN

ACP

CHGEN

AGND

VCC

PVCC

BTST

PH

REGN

HIDRV

LODRV

SRP

SRN

BAT

BYPASS

ISYNSET

VREF5

TS

ADAPTER +bq24721

SCL

SYSTEM

BATDRV

SYC

ACDRV

ACDET

PACK+

SYNP

PGND

SDA

ALARM

IOUT

SYNN

ADAPTER -

EMBEDDED

CONTROLLER

HOST

A/D

SMBus

IRQ

EAO

EAI

FBO

VREF5

R55.6 k

1%

C10

1uF

C6

1uF

C8

0.1uF

C7

0.1uF

PowerPAD

Short PowerPAD toPGND and AGND

VREF5

R8

10k

R7

10k

R6

10k

D1BAT54C

R2

0.010L1

10uH

Q3FDS6670A

Q4FDS6670A

Q1SI4435

C1

10uF

C34x10uF

C4

2x10uF

C52x10uF

C14

0.1uF

C210 uF

R3

464k

1%

R4

33.2k

1%

C11

0.1uF

C19

0.1uF

C15

0.1uFC16

0.1uF

C18

0.1uF

C17

0.1uF

D2

BAT54

C12, 0.1uF

C13, 1uF

R12

33k

R10

20k

R11200 k

R9

7.5k

C212000 pF

C20

51pF C22130 pF

C9

0.1uF

ACGOOD

PACK+

PACK-

R13

0.010

PACK

THERMISTOR

SENSE

R1118k

1%

NVDC System Architectures Using bq24721/30

The implementations of a NVDC charger VR with a bq24721 device are shown in Figure 3 and Figure 4,which represent 2-sense-resistor version and 3-sense-resistor version, respectively. As shown in Figure 5,the configuration of 3-sense resistor NVDC charger VR using bq24730 is similar to that of the3-sense-resistor NVDC charger VR using bq24721. If input current sense/limit accuracy is absolutelynecessary, then three sense resistors can be used.

Figure 3. Typical bq24721 NVDC Application (Two Sense Resistors)

4 Design of a Narrow VDC (NVDC) System Charger Voltage Regulator Using bq24721/30 SLUA412–January 2007Submit Documentation Feedback

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ADAPTER+

bq24721

SYSTEM

PACK+

ADAPTER-

EMBEDDEDCONTROLLER

HOST

A/D

SMBus

IRQ

C61 uF

C210 uF

0.1 uF

VREF5

VREF5

R810 k

R13118 k

1%

R433.2 k1%

R3464 k1%

R55.6 k

1%

R710 k

R610 k

D1BAT54C

R10.010

L110 uH

R20.010

R130.010

Q3FDS6670A

Q4FDS6670A

Q1SI4435

C34x10uF

C42x10 uF

C52x10 uF

C140.1 uF

C110.1uF

C101 uF

C110 uF

C70.1 uF

C90.1 uF

C80.1 uF

C180.1 uF

C170.1 uF

C150.1 uF

C190.1 uF

C22130 pF

C212000 pF

C160.1 uF

D2BAT54

C12

C13, 1 uF

R1020 k

R97.5 k

R11200 k

R1233 k

C2051 pF

ACGOOD

PACK+

PACK-

PACKTHERMISTOR

SENSE

ACN

ACP

CHGEN

AGND

VCC

PVCC

BTST

PH

REGN

HIDRV

LODRV

SRP

SRN

BAT

BYPASS

ISYNSET

VREF5

TS

SCL

BATDRV

SYC

ACDRV

ACDET

SYNP

PGND

SDA

ALARM

IOUT

SYNN

EAO

EAI

FBO

PowerPAD

Short PowerPAD toPGND and AGND

NVDC System Architectures Using bq24721/30

Figure 4. Typical bq24721 NVDC Application (Three Sense Resistors)

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DACGOOD

A/D

R1

0.010

I/O

HOST

R3432k1%

C13,1uF

C190.1uF

*C180.1uF

D2

BAT54

C60.1uF

*C70.1uF

PACK+

ADAPTER+

SYSTEM

PACK-

ADAPTER-

C110uF

C91uF

R20.010

L115uH

Q3FDS6670A

C32x10uF

C42x10uF

C12,0.1uF

R1025k

R11200k

R96k

C152000pF

C1443pF

C16160pF

C200.1uF

*C230.1uF

*C210.1uF

PACK+

R170.010

R1250k

ACN

ACP

GND

AGND

VCC

PVCC

BTST

PH

REGN

HIDRV

LODRV

SRP

SRN

BAT

BYPASS

ISYNSET

VREF5

ACGOOD

BATDRV

SYS

ACDRV

AIRDET

ACDET

LOWBAT

STAT

SYNP

PGND

IBAT

IADAPT

SYNN

SRSET

ACSET

CELLS

CHGEN

EAO

EAI

FBO

IADSLP

DPMDET

LBSET

bq24730

PowerPAD

SHORT PowerPAD TOPGND and AGND

C110.1uF

C100.1uF

VREF5

R1510k

R1410k

R1310k

R1610k

R8300k1%

R721k1%

R633.2k,1%

R552k31%

R411k1%

Q1SI4435

C81uF

D1BAT54C

*C50.1uF

C220.1uF

Q2FDS6670A

R1710k

C24x10uF

C170.1uF

IR2 1000VBAT 1

R18 R2

1000 VBATR18 R2 (1)

NVDC System Architectures Using bq24721/30

Figure 5. Typical bq24730 NVDC Application (Three Sense Resistors),[VI = 20 V, II(lim) = 4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]

Figure 6 shows a method to implement an bq24730-based NVDC charger using only two output senseresistors. The input current is limited, but is not directly sensed. Input current is indirectly regulated byconnecting ACP/ACN and SYNN/SYNP pins across the converter protection resistor and adding a resistorfrom the SRSET pin to the battery positive node in addition to the programming resistor from ACSET toGND. The current variation on R2 after R18 is added as given by:

which is reversely proportional to VBAT. By selecting the right value for R18, the total input current can beindirectly regulated.

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PACK+

ADAPTER+SYSTEM

PACK-ACGOOD

ADAPTER-

A/D

C110uF

I/O

HOST

C91uF

R3432k1%

R20.010

L115uH

Q3FDS6670A

Q2FDS6670A

C24x10uF

C170.1uF

C32x10uF

C42x10uF

C12,0.1uF

C13,1uF

R1025k

R11200k

R96k

C152000pF

C1443pF

C16160pF

C200.1uF

C190.1uF

*C210.1uF

*C180.1uF

D2

BAT54

PACK+

R170.010

BAT

R18

141k

1%

C60.1uF

R1250k

ACN

ACP

GND

AGND

VCC

PVCC

BTST

PH

REGN

HIDRV

LODRV

SRP

SRN

BAT

BYPASS

ISYNSET

VREF5

ACGOOD

BATDRV

SYS

ACDRV

AIRDET

ACDET

LOWBAT

STAT

SYNP

PGND

IBAT

IADAPT

SYNN

SRSET

ACSET

CELLS

CHGEN

EAO

EAI

FBO

IADSLP

DPMDET

LBSET

bq24730

PowerPAD

SHORT PowerPAD TOPGND and AGND

C110.1uF

C100.1uF

VREF5

R1510k

R1410k

R1310k

R1610k

R8300k1%

R733.2k1%

R66.86k,1%

R552k31%

R411k1%

Q1SI4435

C81uF

D1BAT54C

*C50.1uF

*C70.1uF

R1710k

3 Design Example

3.1 Specifications

3.2 Determine the Inductor L

LVIN VBAT_max

IL

VBAT_max

VIN

1fS

19 12.635% 3

12.619

1300 103

13.5 H(2)

Design Example

Figure 6. Typical bq24730 NVDC Application (Two Sense Resistors),[VI = 20 V, II(lim) = 4.76 A, I(Charge) = 3 A, V(BAT) = 16.8 V 4-Cells]

• Adapter voltage: 19 V±3%, 3.4 A• Battery packs: 3s2p Li-Ion battery, 3600 mAH• Battery voltage: 4.2 V/Cell (VBAT_max = 12.6 V, VBAT_min = 9 V)• Fast charge current IBAT = 3 A• Dynamic power management (DPM) current threshold IDPM: 3.3 A

A typical 3-sense-resistor NVDC charger circuit using bq24730 is used, as shown in Figure 5.

Given 35% ripple current, the inductance when VOUT = VBAT_max during charging:

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LVIN VBAT_min

IL

VBAT_min

VIN

1fS

19 935% 3

919

1300 103

15.04 H(3)

IL_MAX1VIN VBAT_max

L

VBAT_max

VIN

1fS

19 12.615 106

12.619

1300 103

0.94 A(4)

IL_MAX2VIN VBAT_min

L

VBAT_min

VIN

1fS

19 915 106

9

19

1300 103

1.05 A(5)

ILpk 2 IBAT 2 3 6 A(6)

3.3 Determine the Losses on the MOSFETs

IRMS_Q2 DmaxI2RE_MAX

112I2

L_MAX1 12.6

195.132 1

12 0.942 4.18 A

(7)

PCOND_Q2I2RMS_Q2 RDSON_Q2 4.182

12 103 210 mW

(8)

Pswon_Q2 IR2_MAX VIN_MIN

QGS QGDIG

fsw 5.13 19 5n 7n

1 300k 351 mW

(9)

PDRV_Q2 Qg_Q2 VDRV_Q2 fS 18 n 19 300 k 103 mV(10)

IRMS_Q3 1 DminI2

RE_MAX 1 9

19 62 4.35 A

(11)

PCOND_Q3 I2RMS_Q3 RDSON_Q3 4.352

12 103 227 mW

(12)

PBD_Q2 VIN_MAXQRR fS 2 VBD IR2_MAX tDT fS

19 21 n 300 k 2 0.8 6 30 n 300 k 206 mW (13)

PDRV_Q3 Qg_Q3 VDRV_Q3 fS 103 mW(14)

PQ2 210 m 351 m 103 m 664 mW (15)

PQ3 227 m 206 m 103 m 536 mW (16)

Design Example

The inductance when VOUT = VBAT_min:

Select L = 15 µH,

The maximum inductor current is limited by the peak current detection threshold associated with pin SYNPand pin SYNN:

Select Coiltronics DR127-150 inductor (15 µH, SMT, 5 A, saturation current 9.66 A, 25 mΩ)

The FDS6680A was selected. The FDS6680A is a NMOS, 30-V, 12-mΩ device in an SO-8 package.

The maximum RMS current of the upper switch Q2 can be estimated by

The conduction losses of the upper switch Q2 are given by

The first-order approximation of the upper MOSFET switching losses:

The gate drive losses of Q2:

The maximum RMS current of the lower switch Q3 can be estimated by

The conduction losses of the lower switch Q3 are given by

The lower MOSFET switching losses:

The gate drive losses of Q3:

The total losses on the upper MOSFET Q2:

The total losses on the lower MOSFET Q3:

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3.4 Determine the Sense Resistors

PR1 I2IN_MAXR1 3.42

0.010 0.116 W (17)

PR17 I2BATR17 32

0.010 0.09 W (18)

PR2 I2Lpk R2 62

0.010 0.36 W(19)

3.5 Determine the Current and Voltage Setting Resistors

R121 500

IL_MAX R2

1 5000.94 0.010

53.2 k(20)

R71 1000IDPM R1

1 1000

3.3 0.010 30.3 k

(21)

R61 1000

IBAT R17

1 10003 0.010

33.3 k(22)

R83

2 5 300 k

(23)

3.6 The Compensator Design

4 Measurement Results

Measurement Results

Select the default sense resistor value 10 mΩ for all the sense resistors.

The maximum power dissipation on the input current sense resistor Ra is:

The maximum power dissipation on the charge current sense resistor R17 is:

The maximum power dissipation on the total output current sense resistor R2 is:

Select 10 mΩ/ 0.5 W with 1206-size, high-precision sensing resistor for each of these sense resistors.

The ISYNSET pin is used to program the charge current threshold at which the charger changes fromnonsynchronous operation to synchronous operation. This is important in order to prevent negativeinductor current. To program the threshold, a resistor is connected from the ISYNSET pin to AGND. TheISYNSET programming resistor can be calculated by:

Select R12 = 49.9 kΩ

The input (DPM) current can be programmed through a resistor from the ACSET pin to AGND. TheACSET programming resistor can be calculated by:

Select R7 = 30.9 kΩ

The charge current can be programmed through a resistor from the SRSET pin to AGND. The SRSETprogramming resistor can be calculated by:

Select R6 = 33.2 kΩ

The battery depleted threshold to be programmed is 3 V/cell. The LBSET programming resistor iscalculated as:

For information about the compensator design, see TI application report SLUA371 .

The efficiency measurement results of a conventional bq24730 charger and path selector with variousbattery voltages are shown in Figure 7. The efficiency increases with the system current because the DPMregulation kicks in and reduces the charge current. The highest efficiency can be up to 98%.

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0 0.5 1 1.5 2 2.5 3 3.590

91

92

93

94

95

96

97

98

99

100

Isys - A

Eff

icie

nc

y -

%

V = 9 Vbat

V = 10.8 Vbat

V = 12.5 Vbat

0 0.5 1 1.5 2 2.5 3 3.590

91

92

93

94

95

96

97

98

99

100

Isys - A

Eff

icie

nc

y -

%

V = 9 Vbat

V = 10.8 VbatV = 12.5 Vbat

Measurement Results

Figure 7. Efficiency Curves of a Regular Application Using bq24730

The efficiency measurement results of a NVDC bq24730 charger VR with various battery voltages areshown in Figure 8. The efficiency curves are relatively flat because the inductor current remains the sameover most of the system load range. The highest efficiency can be up to 95.3%, lower than that of theconventional application.

Figure 8. Efficiency Curves of a NVDC Application Using bq24730

The input and battery current responses of the conventional application and NVDC application duringsystem current transients are shown in Figure 9 and Figure 10, respectively. Under the same outputpower, the input current overshoot of the NVDC charger VR is lower during the DPM transients becausethe battery helps supply the system load current and reduces the impact to the input.

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Measurement Results

Figure 9. System Load Transient Response – Conventional bq24730 Battery Management Circuit

Figure 10. System Load Transient Response - NVDC bq24730 Battery Management Circuit

SLUA412–January 2007 Design of a Narrow VDC (NVDC) System Charger Voltage Regulator Using bq24721/30 11Submit Documentation Feedback

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