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![Page 1: Designing with TSMC's Ultra Low Power(ULP) platform to ... · PDF fileDesigning with TSMC's Ultra Low Power(ULP) platform to connect intelligently and efficiently Meikei Ieong VP TSMC](https://reader034.vdocument.in/reader034/viewer/2022042422/5a9fec4e7f8b9a84178d770d/html5/thumbnails/1.jpg)
Designing with TSMC's Ultra Low Power(ULP) platform to connect
intelligently and efficiently Meikei Ieong
VP TSMC Europe
Email: [email protected]
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Outline
About TSMC and TSMC’s Grand Alliance
TSMC and ARM Collaboration
Implementation Recipe
Summary
![Page 3: Designing with TSMC's Ultra Low Power(ULP) platform to ... · PDF fileDesigning with TSMC's Ultra Low Power(ULP) platform to connect intelligently and efficiently Meikei Ieong VP TSMC](https://reader034.vdocument.in/reader034/viewer/2022042422/5a9fec4e7f8b9a84178d770d/html5/thumbnails/3.jpg)
Outline
About TSMC and TSMC’s Grand Alliance
TSMC and ARM Collaboration
Implementation Recipe
Summary
![Page 4: Designing with TSMC's Ultra Low Power(ULP) platform to ... · PDF fileDesigning with TSMC's Ultra Low Power(ULP) platform to connect intelligently and efficiently Meikei Ieong VP TSMC](https://reader034.vdocument.in/reader034/viewer/2022042422/5a9fec4e7f8b9a84178d770d/html5/thumbnails/4.jpg)
TSMC: Full Technology Coverage
Available Developing
Logic MEMS
65/55nm
90/80nm
0.13/0.11µm
0.25µm
0.35µm
>0.5µm
40nm
28nm
0.18/0.15µm
Analog
(5V)
20nm
Expanding Functionality Expanding Functionality
BCD-
Power IC Embedded
DRAM
MCU
(Embedded
Flash)
RF
CMOS
High
Voltage
10nm
CMOS
Image
Sensor
16nm
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6” Fab
Fab 2
8”Fabs overseas
Fab10 (China)
Fab11 (USA)
SSMC (Singapore)
8” Fabs
Fab 3
Fab 5
Fab 6
Fab 8
GIGAFAB 12 GIGAFAB 14
P1 + P2
P3
P4
GIGAFAB 15
P5
P6
12” GIGAFABs 6” & 8” Fabs
P1 + P2
P3 + P4
Affiliate Fab (Vanguard)
P1 + P2
P3
P4
P5
P6
P7
Total Capacity Growth 11% in 2013
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Specialty
Technologies
Our Technologies Are In Your Mobile
Baseband (40/28/20/16nm)
Application
Processor (40/28/20/16nm)
BT/ Wi-Fi/GPS (65/40nm)
Mini-USB (65nm)
Flash Controller (65/45nm)
Advanced
Technologies This trend has revolutionized
the IC industry
Display Driver (80/55nm)
CIS Camera (0.11um/90/65nm)
Power IC & Audio (0.25/0.18/0.13um)
Touch Controller (0.18/0.13um/90/55nm)
MEMS Microphone & Sensors (0.35/0.18um)
Fingerprint Sensor (0.18um)
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Collaborate at a New Level – TSMC Grand Alliance
After 2000s (Technology Collaboration)
Assembly
& test
Fab
System/
IC design
IDM/ Fab-lite
IC
design
System
design
Fabless
Assembly
Test
Design
service
IP
EDA
IC
design
System
design
System
TSMC launched the Open Innovation
Platform in 2008 as an industry-wide
design Collaborative initiative
EDA / IP / Design Service
Customers Open
Innovation
Platform
TSMC Grand Alliance
More R&D than any large IDM
The Most Powerful Innovation Force
Open
Innovation
Platform
EDA / IP / Design Service
Customers Key Equipment
& Material Makers High
Growth
Market
2008 total IPs: <1,000
Today total IPs: >7,500
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TSMC OIP Innovation Partners
DCA (25) VCA (9)
IP (40) EDA (27)
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Outline
About TSMC and TSMC’s Grand Alliance
TSMC and ARM Collaboration
Implementation Recipe
Summary
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TSMC & ARM together
Mutual Customers and Focus
Leaders in Our Respective Industries
Collaborative Business Model
– We only succeed if our customers succeed
– We help our customers, we do not compete with them
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A Legacy of Success
Cortex-A9 on 28HPM
28nm
Cortex-A15 Multicore on 20SoC
20nm
Cortex-A57 & Cortex-A53 on 16FF
16nm
10FF + ??
10nm
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Outline
About TSMC and TSMC’s Grand Alliance
TSMC and ARM Collaboration
Implementation Recipe
Summary
![Page 13: Designing with TSMC's Ultra Low Power(ULP) platform to ... · PDF fileDesigning with TSMC's Ultra Low Power(ULP) platform to connect intelligently and efficiently Meikei Ieong VP TSMC](https://reader034.vdocument.in/reader034/viewer/2022042422/5a9fec4e7f8b9a84178d770d/html5/thumbnails/13.jpg)
FinFET Key Benefits
Better IDsat performance
– Higher intrinsic gain
Faster for the same power
– Or, lower power for same speed
Better matching behavior
Low leakage
– Appreciably lower leakage
– Lower off-state current
– Lower voltage operation
Frequency (GHz) L
ea
ka
ge P
ow
er
(nW
) 20 30 40 50 60 70 80 90
0.0
1
0.1
1.0
1
0
1
00
Relative
Leakage Power vs. Frequency
Faster for same Power
FinFET
Planar
lower Power for same Speed
VG
ID
(log)
sub VT
FinFET
Off
Leakage
Off
Leakage
FinFET
has a faster
sub VT slope
FinFET
Planar
Relative
sub VT Leakage
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FinFET Challenges
Power scaling – Dynamic power does not scale linearly as the
leakage power
– High pin capacitance of the FINs
Device tuning – Quantized transistor sizing
– Minimum transistor sizing
New variation signatures – Requires AOCV/SB-OCV-based sign-off
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Double Patterning Technology
Final Pattern
Silicon Wafer
1X Pitch
Mask 0
2X Pitch
Mask 1
2X Pitch
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X X X
X X X
X X X
X
X X
X X
DRC-free after Abutment Adequate Pin Access
DRC Error after Abutment
X X X
X
Insufficient Pin Access
Smallest Cell != Smallest Logic Area
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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Cortex-A57/A53 on N16FF
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TSMC Ultra Low Power ULP Technology
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Ultra-Low-Power Technology Summary
TSMC offers ULP technology platform for IoT applications – 0.18eLL, 90uLL: In production
– 55ULP, 40ULP and 28ULP: Risk production in 2015
– RF and Embedded Flash features for IoT SoC integration
Multiple technology options to meet diverse IoT product requirements – Low-duty-cycle applications / Low leakage: 0.18eLL, 90uLL, 55ULP or 40ULP
– High-performance applications / Low dynamic power: 40ULP, 28ULP
OIP ecosystem shortens product time-to-market by leveraging existing solutions while evolving toward ultra low power support
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Ultra-Low-Power Technology Offering
N55 N40 N28
LP uLP LP uLP HPC uLP
1X
0.2X
1X
0.2X
1X
0.6X
Low-leakage SRAM Bit Cell
Ideff Improvement for Speed
(N28ULP)
N55 N40 N28
LP uLP LP uLP HPC uLP
1X
0.3X
1X
0.3X
1X 1X
High-Vt Device for Leakage Control
LVT
SVT
HVT
N55 N40 N28
LP uLP LP uLP HPC uLP
0.9V 0.7V
0.9V 1.1V
0.9V
1.2V
Lower Vdd for Power Reduction
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Ultra-Low-Power Technology Definition
Technology
– Device optimized for 0.7V~0.5V range
– Device enhancement for extremely low leakage
– High-Vt device for leakage reduction
– Low-Vt device to achieve target speed
– SRAM bit cell enhancement and innovation for low Vccmin
Ecosystem
– EDA tool accuracy at 0.5V
– Sign-off corner tightening to reduce conservatism
– Low-Vdd design methodology
– Low-Vdd foundation IP’s: standard cells, SRAM, RF
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Deliverable Item V0.1 V1.0
Collateral
DRM
SPICE
Tech Files
PDK
Foundation Library/IP
Standard Cell
GPIO
PLL
SRAM Compiler/Macro
Non Volatile Memory
Electrical Fuse
OTP
Interface IP
DDR3/DDR3L Re-use
LPDDR3 Re-use
PCIe G2/3 Re-use
MIPI M/D-PHY Re-use
SATA I/II/III Re-use
USB 2.0 Re-use
HDMI 1.4/MHL 2.0 Re-use
Mixed-Signal / Analog
ADC/DAC Re-use
VR Re-use
RF Re-use
28ULP Design Enablement Plan
Q4’14
Q1’15
Q3’14
Q2’15
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40ULP & 55ULP IP Plan
Deliverable Item N40ULP N40eF_ULP N55ULP N55eF_ULP
Collateral
DRM
SPICE
Tech Files
PDK
Foundation
IP
Standard Cell
Thick Oxide
Standard Cell
GPIO
SRAM Compilers
Security ROM
NVM IP eFuse
eFlash N/A N/A
Interface IP Re-use (USB) Re-use (USB)
Mixed-Signal
IP
High-Resolution,
Low-Speed ADC
New design kits to support lower Vdd (0.9V)
Existing IPs can still be used at original Vdd (1.1V/1.2V)
Q1’15
Q2’15
Q4’14
Q3’15
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Outline
About TSMC and TSMC’s Grand Alliance
TSMC and ARM Collaboration
Implementation Recipe
Summary
![Page 31: Designing with TSMC's Ultra Low Power(ULP) platform to ... · PDF fileDesigning with TSMC's Ultra Low Power(ULP) platform to connect intelligently and efficiently Meikei Ieong VP TSMC](https://reader034.vdocument.in/reader034/viewer/2022042422/5a9fec4e7f8b9a84178d770d/html5/thumbnails/31.jpg)
Summary
TSMC and ARM are industry leaders collaborating to create the best solution for our customers
TSMC and ARM understand the importance of offering broad range of products and working ecosystem partners to fit your needs for today and tomorrow
TSMC offers the most comprehensive ultra-low power technology platform aimed at Internet of Things (IoT) and wearable device markets, with significant power reduction benefits and a comprehensive design ecosystem to accelerate time-to-market.