MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 162

Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors Symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.

EDITORS:

J.T. Glass North Carolina State University, Raleigh, North Carolina, U.S.A.

R. Messier Pennsylvania State University, University Park, Pennsylvania, U.S.A.

N. Fujimori Sumitomo Electric Industries, Ltd., Itami, Hyogo, Japan

SPONSORS

Air Products and Chemicals Company Diamond Materials, Inc. Kobe Steel, Ltd. Norton Company Sumitomo Electric Industries, Ltd.

MITH^I M A T E R I A L S RESEARCH SOCIETY 1 У 1 | 1 \ | Э | p i t t s b u r g h , Pennsylvania

Contents

PREFACE

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

PART I: INTRODUCTION TO DIAMOND FOR ELECTRONICS

*THE ELECTRONIC AND OPTICAL PROPERTIES OF DIAMOND; DO THEY FAVOUR DEVICE APPLICATIONS? 3

Alan T. Collins

•GROWTH OF DEVICE-QUALITY HOMOEPITAXIAL DIAMOND THIN FILMS 15 M.W. Geis

•EPITAXIAL GROWTH OF DIAMOND AND DIAMOND DEVICES 2 3 Naoji Fujimori, Takahiro Imai, Hideaki Nakahata, Hiromu Shiomi, and Yoshiki Nishibayashi

•ELECTRONIC PROPERTIES OF DIAMOND/NICKEL AND DIAMOND/BORON NITRIDE INTERFACES 3 5

Warren E. Pickett and Steven C. Erwin

STATUS OF g-SiC, DIAMOND AND C-BN SEMICONDUCTORS; COMPARISON OF A Si POWER FET TO A HYPOTHETICAL DIAMOND FET 43

Richard Koba and William Russell

•SIMPLE GRAPHITIC NETWORK MODELS OF "DIAMONDLIKE" CARBON 49 Michael A. Tamor and Ching-Hsong (George) Wu

PART II: DIAMOND GROWTH

•SYNTHESIS OF METASTABLE DIAMOND 61 Thomas R. Anthony

THERMODYNAMICS AND THE CVD OF DIAMOND 75 Walter A. Yarbrough

STUDIES OF DIAMOND GROWTH MECHANISMS IN A HOT FILAMENT REACTOR 8 5

C. Judith Chu, Benjamin J. Bai, Mark P. D'Evelyn, Robert H. Hauge, and John L. Margrave

ADSORPTION OF HYDROCARBON RADICALS ON THE HYDROGENATED DIAMOND SURFACE 91

Mark R. Pederson, Koblar A. Jackson, and Warren E. Pickett

MICROWAVE CVD OF DIAMOND USING METHANOL-RARE GAS MIXTURES 97 M. Buck, T.J. Chuang, J.H. Kaufman, and H. Seki

•Invited Paper

EFFECTS OF OXYGEN ON DIAMOND GROWTH 1 0 3 S t e p h e n J . H a r r i s a n d A n i t a M. W e i n e r

OXYGEN EFFECT IN DIAMOND DEPOSITION AT LOW TEMPERATURES 109 Y. L i o u , A . I n s p e k t o r , R. W e i m e r , D . K n i g h t , a n d R. M e s s i e r

MORPHOLOGY OF DIAMOND FILMS GROWN BY DC PLASMA J E T CVD 1 1 5 K a z u a k i K u r i h a r a , K e n - I c h i S a s a k i , M o t o n o b u K a w a r a d a , a n d N a g a a k i K o s h i n o

BIAS CONTROLLED HOT FILAMENT CHEMICAL VAPOR DEPOSITION OF DIAMOND THIN FILM ON VARIOUS SUBSTRATES 119

Y . H . L e e , G . - H . Ma, K . J . B a c h m a n n , a n d J . T . G l a s s

EFFECTS OF DIFFERENT CH4-H2 GAS COMPOSITIONS ON THE MORPHOLOGY AND GROWTH OF DIAMOND GROWN BY HOT FILAMENT CVD 1 2 7

E d w a r d N . F a r a b a u g h a n d A l b e r t F e l d m a n

A COMPARATIVE STUDY OF GAS CHEMISTRY IN METHANE/ HYDROGEN AND ACETYLENE/HYDROGEN GAS MIXTURES DURING НОТ-FILAMENT VAPOR DEPOSITION OF DIAMOND 1 3 3

C h i n g - H s o n g Wu, M.A. T a m o r , T . J . P o t t e r , a n d E .W. K a i s e r

IMTORTANCE OF FILAMENT REACTIVITY FOR CVD DIAMOND GROWTH 139 M. Sommer a n d F . W . S m i t h

DEPOSITION OF DIAMOND FILMS BY SCANNING OXY-ACETYLENE FLAME 14 5

Y o n h u a T z e n g , R i c h a r d P h i l l i p s , C h i n C . T i n , Y . C h e n , T . S r i v i n y u n o n , a n d C a l v i n C u t s h a w

DEPOSITION AND CHARACTERIZATION OF CARBON FILMS PRODUCED BY NITROGEN/ARGON MIXTURE RF SPUTTERING 1 5 1

C . J . T o r n g , T . Y e h , J . M . S i v e r t s e n , a n d J . H . J u d y

APPLICATION OF A THERMOBALANCE FOR STUDYING DEPOSITION K I N E T I C S OF DIAMOND FILMS 157

J e r r y C z a r n e c k i a n d D a v i d T h u m i m

CHARACTERIZATION OF HOLLOW-CATHODE DC DISCHARGE GROWTH OF DIAMOND: ROTATIONAL VIBRONIC EMISSION IN A C H . - H , DISCHARGE 1 6 3

H . N . C h u , A . R . L e f k o w , E . A . D e n H a r t o g , J . J a c o b s , P . S a n d s t r o m , L . W . A n d e r s o n , M.G . L a g a l l y , a n d J . E . L a w l e r

FREE-STANDING CVD DIAMOND SHAPES AND COATINGS 1 6 7 D o n a l d E . P a t t e r s o n , R o b e r t H . H a u g e , a n d J o h n L . M a r g r a v e

K r F * LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF DIAMOND 1 7 3 G e o r g e W. T y n d a l l a n d N i g e l P . H a c k e r

INVESTIGATIONS OF EXCIMER LASER EFFECTS ON CVD DIAMOND GROWTH 1 7 9

P e h r E . P e h r s s o n , H . H . N e l s o n , a n d F . G . C e l i i

LASER ASSISTED TECHNIQUES FOR DIAMOND AND DIAMONDLIKE THIN FILMS 18 5

A. Rengan, N. Biunno, J. Narayan, and P. Moyer

REGROWTH OF DAMAGED LAYERS IN DIAMOND PRODUCED BY ION IMPLANTATION 189

G.S. Sandhu, B. Liu, N.R. Parikh, J.D. Hunn, M.L. Swanson, Th. Wiehert, M. Deicher, H. Skudlik, W.N. Lennard, and I.V. Mitchell

SELECTIVE NUCLEATION OF SINGLE CRYSTAL CVD DIAMOND AND ITS APPLICABILITY TO SEMICONDUCTOR DEVICES 19 5

H. Kawarada, J.S. Ma, T. Yonehara, and A. Hiraki

THEORY AND EXPERIMENT: DEFECT STABILIZATION OF DIAMOND FILMS THROUGH MULTIPLE-REGROWTH 2 01

Y. Bar-Yam and T.D. Moustakas

PART III: CHARACTERIZATION AND PROPERTIES OF DIAMOND

NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY IN THE STUDY OF DIAMOND THIN FILMS 2 07

Karen Mary McNamara, K.K. Gleason, and M.W. Geis

PREDICTED INFRARED SPECTRUM AND X-RAY DIFFRACTION PATTERNS FOR DIAMOND POLYTYPES 213

Andrew W. Phelps, William Howard, William B. White, Karl E. Spear, and D. Huang

DOMAIN SIZE DETERMINATION IN DIAMOND THIN FILMS 219 Y.M. LeGrice, R.J. Nemanich, J.Т. Glass, Y.H. Lee, R.A. Rudder, and R.J. Markunas

CHARACTERIZATION OF THIN FILM AND SINGLE-CRYSTAL CVD DIAMOND BY ABSORPTION AND LUMINESCENCE SPECTROSCOPY 2 25

A.T. Collins, M. Kamo, and Y. Sato

EFFECT OF DOPING WITH NITROGEN AND BORON ON CATHODO-LUMINESCENCE OF CVD-DIAMOND 231

Y. Yokota, H. Kawarada, and A. Hiraki

PHOTOLUMINESCENCE SPECTROSCOPY OF DIAMOND FILMS 23 7 J.A. Freitas, Jr., J.E. Butler, S.G. Bishop, W.A. Carrington, and U. Strom

CW FOUR-WAVE MIXING IN SYNTHETIC DIAMOND 243 D.A. Redman and S.C. Rand

OPTICAL CHARACTERIZATION OF NICKEL IN DIAMOND 249 Maria Helena Nazare, A.J. Neves, and Gordon Davies

A STUDY OF THE ELECTRONIC STRUCTURE NEAR INDIVIDUAL DISLOCATIONS IN DIAMOND BY ENERGY-LOSS SPECTROSCOPY 255

J. Bruley and P.E. Batson

CHARACTERIZATION OF HEAVY METAL CONTAMINATION IN DIAMOND FILMS USING SIMS, TXRF, AND RBS 261

R.S. Hockett and James Knowles

INFRARED CHARACTERIZATION OF THE HYDROGEN ENVIRONMENTS IN DIAMOND THIN FILMS 267

Y.M. LeGrice, E.C. Buehler, R.J. Nemanich, J.Т. Glass, K. Kobashi, F. Jansen, M.A. Machonkin, and C.C. Tsai

IN-SITU CHARACTERIZATION OF THIN POLYCRYSTALLINE DIAMOND FILM QUALITY BY THERMAL WAVE AND RAMAN TECHNIQUES 273

R.W. Pryor, P.K. Kuo, L. Wei, R.L. Thomas, and P.L. Tal ley

INTRA- AND INTERGRANULAR FRACTURE OF DIAMOND THIN FILMS 279 H.A. Hoff, A.A. Morrish, W.A. Carrington, J.E. Butler, and B.B. Rath

FAR-INFRARED SPECTROSCOPY STUDY OF DIAMOND FILMS 2 85 A.J. Gatesman, R.H. Giles, G.C. Phillips, J. Waldman, L.P. Bourget, and R. Post

LASER EMISSION FROM NATURAL DIAMONDS 291 Lucilia Santos and Estela Pereira

PART IV: DIAMOND ELECTRICAL PROPERTIES, CONTACTS AND DEVICES

ELECTRICAL PROPERTIES OF HOMOEPITAXIAL DIAMOND FILMS 297 G.Sh. Gildenblat, S.A. Grot, C.W. Hatfield, C.R. Wronski, A.R. Badzian, T. Badzian, and R. Messier

ELECTRICAL PROPERTIES OF THIN FILM AND BULK DIAMOND TREATED IN HYDROGEN PLASMA 303

Sacharia Albin and Linwood Watkins DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF THIN FILM DIAMOND 3 09

K. Srikanth, S. Ashok, W. Zhu, A. Badzian, and R. Messier

N-TYPE DOPING AND DIFFUSION OF IMPURITIES IN DIAMOND 315 S.A. Kajihara, A. Antonelli, and J. Bernholc

DOING OF DIAMOND BY CO-IMPLANTATION WITH DOPANT ATOMS AND CARBON 321

G.S. Sandhu, C.T. Kao, M.L. Swanson, and W.K. Chu

CYCLIC-CLUSTER MINDO/3 COMPUTATIONS OF THE LATTICE CONSTANT AND BAND STRUCTURE OF BORON NITRIDE, DIAMOND AND SILICON CARBIDE 327

Lawrence C. Snyder, Arthur H. Edwards, and Peter Deak

ELECTRICAL CHARACTERIZATION OF METAL CONTACTS ON DIAMOND THIN FILMS 333

Dario Narducci, Jerome J. Cuomo, C. Richard Guarnieri, and Stanley J. Whitehair

ELECTRICAL CONTACTS TO POLYCRYSTALLINE В DOPED DIAMOND FILMS 341

K. Nishimura, K. Das, M. Iwase, J.T. Glass, and K. Kobashi

METALLIZATION OF SEMICONDUCTING DIAMOND: Mo, M o / A u AND M o / N i / A u 3 47

K . L . M o a z e d , J . R . Z e i d l e r , a n d M . J . T a y l o r

PROPERTIES OF CVD DIAMOND/METAL INTERFACE 3 5 3 Y u s u k e M o r i , H i r o s h i K a w a r a d a , a n d A k i o H i r a k i

BLUE LIKE DIAMOND LIGHT EMITTING DEVICES TO BE MASS-PRODUCED 3 5 9

M. K a d o n o , S . H a y a s h i , N . H i r o s e , K. I t o h , T . I n u s h i m a , a n d S . Y a m a z a k i

ELECTRICAL BEHAVIOR OF DIFFUSED I M P U R I T I E S IN DIAMOND SINGLE CRYSTALS 3 65

D a r i o N a r d u c c i a n d J e r o m e J . Cuomo

A DIAMOND S I L I C O N HETEROJUNCTION DIODE 3 7 1 C . L . E l l i s o n , R . M . C o h e n , a n d J . T . H o g g i n s

CARBON-SILICON HETEROJUNCTION DIODES FORMED BY C H . / A r r f PLASMA THIN FILM DEPOSITION ON S i SUBSTRATES 3 7 7

G . A . J . A m a r a t u n g a , W . I . M i l n e , A . P u t n i s , K . K . C h a n , K . J . C l a y , a n d M . E . W e i l a n d

DOPING EFFECT IN HYDROGENATED AMORPHOUS CARBON THIN FILMS BY ION IMPLANTATION 3 83

S . P . Wong a n d S h a o q i P e n g

OPTICAL BAND GAP OF DIAMOND-LIKE CARBON FILMS AS A FUNCTION OF RF SUBSTRATE BIAS 3 89

P .W. P a s t e l a n d W . J . V a r h u e

PART V : GROWTH AND CHARACTERIZATION OF S I L I C O N CARBIDE

•STEP-CONTROLLED EPITAXIAL GROWTH OF S i C 3 9 7 H i r o y u k i M a t s u n a m i , T e t s u z o U e d a , a n d H i r o n o r i N i s h i n o

LOW TEMPERATURE METAL ORGANIC CHEMICAL VAPOR DEPOSITION (LTMOCVD) OF ELECTRONIC MATERIALS 4 09

A l a i n E . K a l o y e r o s , P a u l J . T o s c a n o , R i c h a r d B . R i z k , V i c t o r T u l c h i n s k y , a n d A l e x G r e e n e

GROWTH OF 6 H - S i C ON CVD-GROWN 3 C - S i C SUBSTRATES 4 1 5 Woo S i k Yoo a n d H i r o y u k i M a t s u n a m i

DOPED AMORPHOUS S i C , MIXED CARBIDE AND OXYCARBIDE THIN FILMS BY A LIQUID ROUTE 4 2 1

C - J C h u , E . L i i m a t t a , a n d J . D . M a c k e n z i e

» I n v i t e d P a p e r

LIQUID PHASE HOMOEPITAXIAL GROWTH OF 4 H - S i C CRYSTALS AND FABRICATION TECHNIQUES OF BLUISH-PURPLE L I G H T -EMITTING DIODES 4 27

Y. U e d a , T . N a k a t a , К . К о д а , Y . M a t s u s h i t a , Y . F u j i k a w a , T . U e t a n i , T . Y a m a g u c h i , a n d T . N i i n a

LOW TEMPERATURE SELECTIVE GROWTH OF S - S i C USING S i H 2 C l 2 / C 3 H g / H C l / H 2 GAS SYSTEM 4 3 3

Y. O h s h i t a

INFRARED STUDY OF AMORPHOUS-CRYSTALLINE PHASE TRANSITION IN AN ANNEALED AMORPHOUS HYDROGENATED SILICON-CARBON ALLOY FILM 4 3 9

D . K . B a s a a n d F . W . S m i t h

THE FORMATION OF HELICAL DISLOCATIONS IN S I L I C O N SUBSTRATES DURING EPITAXIAL DEPOSITION OF ß - S i C 44 5

M. A i n d o w , T . T . C h e n g , a n d P . P i r o u z

GROWTH OF EPITAXICAL S i C LAYERS ONTO ON- AND O F F - A X I S 6 H - S i C SUBSTRATES BY ION BEAM DEPOSITION 4 5 1

K . L . M o r e , S . P . W i t h r o w , Т . Е . H a y n e s , a n d R . A . Z u h r

SEM OBSERVATION OF GROWTH AND DEFECT FORMATION OF HETEROEPITAXIALLY GROWN S i C ON ( 1 0 0 ) S ILICON 4 5 7

B . M o l n a r a n d L . M . S h i r e y

PART V I : S I L I C O N CARBIDE: ELECTRICAL PROPERTIES, CONTACTS, AND DEVICES

«EPITAXIAL THIN FILM GROWTH AND DEVICE DEVELOPMENT IN MONOCRYSTALLINE ALPHA AND BETA SILICON CARBIDE 4 6 3

R o b e r t F . D a v i s , J . W . P a l m o u r , a n d J . A . Edmond

NATIVE DEFECTS, DIFFUSION, SELF-COMPENSATION, AND BORON DOPING IN CUBIC S I L I C O N CARBIDE 4 7 5

C. Wang, J . B e r n h o l c , a n d R . F . D a v i s

*SOME OBSERVATIONS ON THE ELECTRICAL CHARACTERIZATION OF THE HETEROEPITAXIALLY GROWN CUBIC S i C 4 8 1

B . M o l n a r a n d G. K e i n e r

DEEP-LEVEL DOMINATED ELECTRICAL CHARACTERISTICS OF Au CONTACTS ON ß - S i C 4 8 9

К. D a s , H . S . K o n g , J . В . P e t i t , J . W . B u m g a r n e r , L . G . M a t u s , a n d R . F . D a v i s

A NEW DEEP ACCEPTOR IN EPITAXIAL CUBIC S i C 4 9 5 J . A . F r e i t a s J r . a n d S . G . B i s h o p

ELECTRONIC STRUCTURE OF WIDE BANDGAP SEMICONDUCTOR INTERFACES: CUBIC S i C / A I N , S i C / B P , C/BN 5 0 1

W . R . L . L a m b r e c h t a n d B . S e g a l l

OHMIC CONTACTS ON ß - S i C 5 0 7 M . I . C h a u d h r y , W . B . B e r r y , a n d M . V . Z e l l e r

* I n v i t e d P a p e r

PART VII: OTHER WIDE BANDGAP SEMICONDUCTORS

•PERSPECTIVE ON GALLIUM NITRIDE 515 Jacques I. Pankove

GROWTH OF HIGH-RESISTIVITY WURTZITE AND ZINCBLENDE STRUCTURE SINGLE CRYSTAL GaN BY REACTIVE-ION MOLECULAR BEAM EPITAXY 525

R.C. Powell, G.A. Tomasch, Y.-W. Kim, J. A. Thornton, and J.E. Greene

MICROSTRUCTURAL AND OPTICAL CHARACTERIZATION OF GaN FILMS GROWN BY PECVD ON (0001) SAPPHIRE SUBSTRATES 531

T.P. Humphreys, C.A. Sukow, R.J. Nemanich, J.В. Posthill, R.A. Rudder, S.V. Hattangady, and R.J. Markunas

STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY 53 7

Z. Sitar, M.J. Paisley, B. Yan, and R.F. Davis

•CUBIC BORON NITRIDE CRYSTALS GROWN AT HIGH PRESSURE: pn JUNCTION, CRYSTALLOGRAPHIC POLARITY AND SOME PROPERTIES 543

Osamu Mishima

CUBIC BORON NITRIDE AS A NEW SEMICONDUCTOR FOR OPTO­ELECTRONICS: LUMINESCENCE PROPERTIES AND POTENTIALITIES 555

Koh Era and Osamu Mishima

VIBRATIONAL SPECTROSCOPY OF BORON NITRIDE AT HIGH TEMPERATURES AND PRESSURES 561

Gregory J. Exarhos and Nancy J. Hess

GROWTH AND PHYSICAL PROPERTIES OF rf-MAGNETRON SPUTTERED InN SEMICONDUCTING FILMS 567

W.A. Bryden, J.S. Morgan, T.J. Kistenmacher, D. Dayan, R. Fainchtein, and Т.О. Poehler

SUBSTRATE AND TEMPERATURE DEPENDENT MORPHOLOGY OF rf-SPUTTERED INDIUM NITRIDE FILMS 57 3

T.J. Kistenmacher, D. Dayan, R. Fainchtein, W.A. Bryden, J.S. Morgan, and Т.О. Poehler

ELECTRON MICROSCOPY OF InN FILMS 579 J.S. Morgan, T.J. Kistenmacher, W.A. Bryden, and Т.О. Poehler

*BORON PHOSPHIDE AS A REFRACTORY SEMICONDUCTOR 585 Y. Kumashiro, M. Hirabayashi, and S. Takagi

THERMAL AND ION BEAM INDUCED REACTIONS IN Ni ON BP 59 5 Naoto Kobayashi, Yukinobu Kumashiro, Peter Revesz, Jian Li, and James W. Mayer

BORON PHOSPHIDE ON SILICON FOR RADIATION DETECTORS 601 J.C. Lund, F. Olschner, F. Ahmed, and K.S. Shah

•Invited Paper

MOCVD OF WIDE BANDGAP III-V SEMICONDUCTORS BY USING NOVEL PRECURSORS 60 5

Kwok-L. Ho, Klavs F. Jensen, Scott A. Hanson, John F. Evans, David C. Boyd, and Wayne L. Gladfelter

THE ROLE OF POLARITY ON THE STABILITY OF GRAPHITIC COMPOUNDS 611

Renata M. Wentzcovitch, Alessandra Continenza, and A.J. Freeman

ZnGeP2: A WIDE BANDGAP CHALCOPYRITE STRUCTURE SEMI­CONDUCTOR FOR NONLINEAR OPTICAL APPLICATIONS 615

G.C. Xing, K.J. Bachmann, J.В. Posthill, and M.L. Timmons

AUTHOR INDEX 621

SUBJECT INDEX 62 5

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 629