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Discrete IGBT datasheet understanding
Zhou Wei(周伟)
System application engineer
Infineon Technologies China
Page 2 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Product Qualifications & Team Structure Infineon IGBT Chip Technology
Discrete IGBT datasheet understanding
Product Qualifications & Team Structure Datasheet understanding
Electrical characteristic
Switching characteristic
Thermal features
Page 3 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Behaviour: IGBT vs MOSFET
VCEs
at VDS
IC
ID
The IGBT is characterized by it‘s pn
threshold voltage. Conduction loss are in
linear relation to IC
The MOSFET behaves like a resistor.
Conduction loss are proportional to ID²
The IGBT has a characteristic current tail.
Turn off losses are dominated by the tail
current.
IGBT is basically the preferred device for higher currents at limited pulse frequencies.
pn threshold voltage
VCE
t
IC
current tail
ID
UDS
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Infineon´s IGBT history for Drives Product Technologies
Page 5 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Vertical IGBT Concepts
Punch Through Non Punch Through Trench + Field-Stop
-E
Collector
Emitter Gate
-E
Collector
Emitter Gate
-E
Collector
Emitter Gate
n- basis (epi)
n+ buffer (epi)
p+ emitter (substrate)
n- basis (substrate)
n- basis (substrate)
Advantage
• Implanted Back-Emitter better
adjustable
Performance
• Lower Schwitching Losses
• Higher Switching Robustness
Advantage
• Implanted Back-Emitter
• Implanted Fieldstop enables
thinner base region
Performance
• Lower VCEsat
• Lower Switching Losses
• Robustness like NPT
(ROW: 1988) (IFX: 1990 ROW: 1997) (IFX: 2000)
Page 6 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Standard planar IGBT are still good, but they have …
Emitter
Gate
Collector p+
n+
p+
n-(substrate)
• …high conduction losses, due to high
VCE(sat)
• …low switching performance, due to low
switching speed
• …poor thermal properties, due to thick
wafers
New Technologies are necessary to meet tomorrows requirements
Page 7 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
How to improve the standard IGBT-technology?
Emitter
Gate
Collector p+
n+
p+
n-(substrate)
n ( fieldstop )
• Improvement of thin wafer technology
(Fieldstop) reduces VCE(sat) dramatically
Reduction of Conduction Losses for higher Efficiency and
improved thermal properties
Reduction of Swtiching Losses for higher Efficiency
Infineon´s TrenchStop ® -Technology meets today tomorrow´s requirements
• Introduction of trench gate technology
reduces VCE(sat) further
Reduction of Conduction Losses for higher Efficiency
Emitter
Gate
Collector p+
n+
p+
n-(substrate)
n (fieldstop)
Emitter
Gate
Collector p+
n+
p+
n-(substrate)
n (fieldstop)• Well established thinwafer technology
lowers VCE(sat) & Eoff furthermore
• Introduction of RC Diode technology
Page 8 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Product Qualifications & Team Structure Infineon IGBT Chip Technology
Discrete IGBT datasheet understanding
Product Qualifications & Team Structure Datasheet understanding
Electrical characteristic
Switching characteristic
Thermal features
Page 9 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Current parameters (IKW50N60T)
Nominal current (Ic)
* * Tjmax @ max Tjmax Rthjc Ic C Vcesat C Tc ° - ° =
All nominal current is specified at 100 /110℃,25℃ value is also given as reference.
Ic is calculated as below:
This value just represents IGBT DC behavior, can be a reference of choosing IGBT, but not yardstick.
Tc> 100°C
Tc set to 100°C
IKW50N60T Tj=175°C
Vcesat=2.4V Ic=50A
Rthjc=0.45°C/W
IKW50N60T
Tc=121°C
Page 10 Copyright © Infineon Technologies 2008. All rights reserved.
Current Limitation (IKW50N60T)
RthjcPtotTjc =
CECtot VIP =
CECTOCE RIVV =
CE
TO
CEthjc
cjCETOthjc
CR
V
RR
TTRVRI
-
-=
22
4 max
2
Calculation of Max. DC Current
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Current Limitation
Value limited by bondwire
IKW50N60T in TO-247 IHW20N120R3 in TO-247
Page 12 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Pulse collector current (IKW50N60T)
Pulse current (Icpuls)
Icpuls is defined as repetitive turn on & maximum turn off pulse current
3 ~ 4 times of Ic ,according to different technology
Page 13 Copyright © Infineon Technologies 2008. All rights reserved.
VCES – Breakdown Voltage (IKW50N60T)
VCES
VCES-test condition
Max. collector-emitter voltage under condition of gate and emitter shorted, where leakage current is within spec.
Vces under Tj=25℃, proportional to its junction temperature
Vces can not be violated at any condition, otherwise IGBT would break down.
Page 14 Copyright © Infineon Technologies 2008. All rights reserved.
In real application, turn-off voltage need to be smaller
than max. VCES
IKW50N60T
Max. VCES can be shunt donw
Due to the stray inductance
ΔV= Lσ * di/dt
VCES – Breakdown Voltage (IKW50N60T)
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Voltage parameters (IKW50N60T)
Vcesat
Vcesat is specified at nominal current
Positive coefficient Good for paralleling
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Voltage parameters (IKW50N60T)
Vcesat increase with Ic increasing
Vcesat increase with Vge decreasing
Vge is not recommended to use too small: conduction losses
Page 17 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
VGEth (IKW50N60T)
Pay attention to negative temperature coefficient of VGEth.
Threshold of IGBT turn on:
Page 18 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Max operation junction temperature (IKW50N60T)
Tjmax is the max temperature for IGBT to sustain all electrical parameters within spec.
Never exceed Tjmax at any condition! Otherwise, IGBT will run away fail!
Page 19 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Product Qualifications & Team Structure Infineon IGBT Chip Technology
Discrete IGBT datasheet understanding
Product Qualifications & Team Structure Datasheet understanding
Electrical characteristic
Switching characteristic
Thermal features
Page 20 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Short circuit current (IKW25N120T2)
Different value for various start junction condition.
Page 21 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Short circuit current & time (IKW25N120T2)
10us guaranteed at test condition.
Page 22 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Current parameters (IKW25N120T2)
Short circuit condition:
¬ Vge: gate voltage (15V)
¬ Vcc: DC bus voltage
¬ Tvj: short circuit start temperature
Infineon test short circuit at maximum operation Tj
Vge
Isc
tsc
Page 23 Copyright © Infineon Technologies 2008. All rights reserved. 2011/10/21
Switching parameters (IKW50N60T)
Qgate
Ciss, Crss, Coss
This value is specified at +15V, used to calculate driving power
E
C
G
CGC
CGE
CEC
Ciss = CGE + CGC: Input capacitance (output shorted) Coss = CGC + CEC: Output capacitance (input shorted) Crss = CGC: Reverse transfer capacitance (Miller capacitance)
fVQP GEg =
Page 24 Copyright © Infineon Technologies 2008. All rights reserved. 21.10.2011
Product Qualifications & Team Structure Infineon IGBT Chip Technology
Discrete IGBT datasheet understanding
Product Qualifications & Team Structure Datasheet understanding
Electrical characteristic
Switching characteristic
Thermal features
Page 25 Copyright © Infineon Technologies 2008. All rights reserved.
Chip
Solder
Copper Baseplate
Heatsink
Tj
Tc
Th
Ta
Chip – Case
Tjc
Case – Heatsink
Tch
Heatsink – Ambient
Tha
Rthjc
Input Power Output Power Power Loss
Tj = Tjc + Tch + Tha + Ta
Rthch
Rthha
Thermal Grease
Thermal Features
IGBT-thermal model
Rth(j-a) = Rth(j-c) + Rth(c-s) + Rth(s-a)
Page 26 Copyright © Infineon Technologies 2008. All rights reserved.
Rth JC ; Rth CH
IGBT Thermal Resistance (IKW50N60T)
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Ptot-total power dissipation
Tjmax = Tc+Ptot*Rthjc (max)
Rated at 25℃
Ptot =(Tjmax- Tc)/Rthjc (max)
IGBT Power Dissipation & Junction Temp. (IKW50N60T)