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©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.comFCP20N60 / FCPF20N60 Rev. A1

FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

SuperFETTMJuly 2005

FCP20N60 / FCPF20N60 600V N-Channel MOSFETFeatures• 650V @TJ = 150°C

• Typ. RDS(on) = 0.15Ω

• Ultra low gate charge (typ. Qg = 75nC)

• Low effective output capacitance (typ. Coss.eff = 165pF)

• 100% avalanche tested

DescriptionSuperFETTM is, Farichild’s proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced chargebalance mechanism for outstanding low on-resistance andlower gate charge performance.

This advanced technology has been tailored to minimize con-duction loss, provide superior switching performance, and with-stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DCpower conversion in switching mode operation for system min-iaturization and higher efficiency.

Absolute Maximum Ratings

*Drain current limited by maximum junction temperature

Thermal Characteristics

S

D

G

TO-220G SDTO-220FG SD

Symbol Parameter FCP20N60 FCPF20N60 UnitVDSS Drain-Source Voltage 600 V

ID Drain Current - Continuous (TC = 25°C)- Continuous (TC = 100°C)

2012.5

20*12.5*

AA

IDM Drain Current - Pulsed (Note 1) 60 60* A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ

IAR Avalanche Current (Note 1) 20 A

EAR Repetitive Avalanche Energy (Note 1) 20.8 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)- Derate above 25°C

2081.67

390.3

WW/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds 300 °C

Symbol Parameter FCP20N60 FCPF20N60 UnitRθJC Thermal Resistance, Junction-to-Case 0.6 3.2 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

2 www.fairchildsemi.comFCP20N60 / FCPF20N60 Rev. A1

FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Package Marking and Ordering Information

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C3. ISD ≤ 20A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%5. Essentially Independent of Operating Temperature Typical Characteristics

Device Marking Device Package Reel Size Tape Width QuantityFCP20N60 FCP20N60 TO-220 - - 50

FCPF20N60 FCPF20N60 TO-220F - - 50

Symbol Parameter Conditions Min Typ Max UnitsOff CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 600 -- -- V

VGS = 0V, ID = 250µA, TJ = 150°C -- 650 -- V

∆BVDSS/ ∆TJ

Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.6 -- V/°C

BVDS Drain-Source Avalanche BreakdownVoltage VGS = 0V, ID = 20A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600V, VGS = 0VVDS = 480V, TC = 125°C

----

----

110

µAµA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V

RDS(on) Static Drain-SourceOn-Resistance VGS = 10V, ID = 10A -- 0.15 0.19 Ω

gFS Forward Transconductance VDS = 40V, ID = 10A (Note 4) -- 17 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz-- 2370 3080 pF

Coss Output Capacitance -- 1280 1665 pF

Crss Reverse Transfer Capacitance -- 95 -- pF

Coss Output Capacitance VDS = 480V, VGS = 0V, f = 1.0MHz -- 65 85 pF

Coss eff. Effective Output Capacitance VDS = 0V to 400V, VGS = 0V -- 165 -- pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 300V, ID = 20A

RG = 25Ω

(Note 4, 5)

-- 62 135 ns

tr Turn-On Rise Time -- 140 290 ns

td(off) Turn-Off Delay Time -- 230 470 ns

tf Turn-Off Fall Time -- 65 140 ns

Qg Total Gate Charge VDS = 480V, ID = 20AVGS = 10V

(Note 4, 5)

-- 75 98 nC

Qgs Gate-Source Charge -- 13.5 18 nC

Qgd Gate-Drain Charge -- 36 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 60 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 20AdIF/dt =100A/µs (Note 4)

-- 530 -- ns

Qrr Reverse Recovery Charge -- 10.5 -- µC


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100 101

100

101

102

VGS

Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 VBottom : 5.5 V

Notes : 1. 250µs Pulse Test 2. TC = 25°C

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

2 4 6 8 10

100

101

102

Note 1. VDS = 40V 2. 250µs Pulse Test

-55°C

150°C

25°C

I D ,

Dra

in C

urre

nt [

A]

VGS , Gate-Source Voltage [V]

0 5 10 15 20 25 30 35 40 45 50 55 60 65 700.0

0.1

0.2

0.3

0.4

VGS = 20V

VGS = 10V

Note : TJ = 25°C

RD

S(O

N) [

Ω],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

ID, Drain Current [A]0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

25°C150°C

Notes : 1. VGS = 0V 2. 250µs Pulse Test

I DR ,

Rev

erse

Dra

in C

urre

nt [

A]

VSD , Source-Drain Voltage [V]

10-1 100 1010

1000

2000

3000

4000

5000

6000

7000

8000

9000

10000C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

Notes : 1. V

GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Cap

acita

nce

[pF]

VDS, Drain-Source Voltage [V]0 10 20 30 40 50 60 70 80

0

2

4

6

8

10

12

VDS = 250V

VDS = 100V

VDS = 400V

Note : ID = 20A

V GS, G

ate-

Sour

ce V

olta

ge [V

]

QG, Total Gate Charge [nC]


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9-1. Maximum Safe Operating Area Figure 9-2. Maximum Safe Operating Area for FCP20N60 for FCPF20N60

Figure 10. Maximum Drain Current vs. Case Temperature

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes : 1. V

GS = 0 V

2. ID = 250µA

BV D

SS, (

Nor

mal

ized

)D

rain

-Sou

rce

Brea

kdow

n V

olta

ge

TJ, Junction Temperature [°C]-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes : 1. VGS = 10 V 2. ID = 20 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [°C]

100 101 102 10310-2

10-1

100

101

102Operation in This Area is Limited by R DS(on)

DC10 ms

1 ms100 us

Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]100 101 102 103

10-2

10-1

100

101

102

100 us

DC100 ms

10 ms

1 ms

Operation in This Area is Limited by R DS(on)

Notes : 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse

I D, D

rain

Cur

rent

[A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 1500

5

10

15

20

25

I D, D

rain

Cur

rent

[A]

TC, Case Temperature [°C]


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FCP20N60

Figure 11-2. Transient Thermal Response Curve for FCPF20N60

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1

1 0 -2

1 0 -1

10 0

N otes : 1 . Z

θJC (t) = 0 .6 °C /W M ax. 2 . D uty F ac to r, D = t1/t2

3 . TJM

- TC = P

D M * Z

θJC(t)

s ing le pu lse

D =0.5

0.02

0.2

0.05

0.1

0.01

Z θJC(t)

, The

rmal

Res

pons

e

t 1, S q ua re W ave P u lse D u ra tion [sec ]

t1

PDM

t2

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 0 -2

1 0 -1

1 0 0

N o te s : 1 . Z

θ JC ( t) = 3 .2 °C /W M a x. 2 . D u ty F a c to r , D = t1/t2

3 . T J M - T C = P D M * Zθ JC ( t)

s in g le p u lse

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

Z θJC(t)

, The

rmal

Res

pons

e

t 1 , S q u a re W a ve P u ls e D u ra t io n [s e c ]

t1

PDM

t2


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

Charge

VGS

10VQg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50KΩ

200nF12V

Same Typeas DUT

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on) tr

t on t off

td(off) tf

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

t p

EAS = L IAS2----

21EAS = L IAS

2----21----21 --------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------

DUT

VDS

+

_

DriverRG

Same Type as DUT

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

VDD

LLI SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body DiodeForward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse WidthGate Pulse Period

--------------------------D =Gate Pulse WidthGate Pulse Period

--------------------------


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Mechanical Dimensions

4.50 ±0.209.90 ±0.20

1.52 ±0.10

0.80 ±0.102.40 ±0.20

10.00 ±0.20

1.27 ±0.10

ø3.60 ±0.10

(8.70)

2.80

±0.

1015

.90

±0.2

0

10.0

8 ±0

.30

18.9

5MA

X.

(1.7

0)

(3.7

0)(3

.00)

(1.4

6)

(1.0

0)

(45°)

9.20

±0.

2013

.08

±0.2

0

1.30

±0.

10

1.30+0.10–0.05

0.50+0.10–0.05

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

TO-220

Dimensions in Millimeters


FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

Mechanical Dimensions (Continued)

(7.00) (0.70)

MAX1.47

(30°)

#1

3.30

±0.

1015

.80

±0.2

0

15.8

7 ±0

.20

6.68

±0.

20

9.75

±0.

30

4.70

±0.

20

10.16 ±0.20

(1.00x45°)

2.54 ±0.20

0.80 ±0.10

9.40 ±0.20

2.76 ±0.200.35 ±0.10

ø3.18 ±0.10

2.54TYP[2.54 ±0.20]

2.54TYP[2.54 ±0.20]

0.50+0.10–0.05

TO-220F

Dimensions in Millimeters

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended tobe an exhaustive list of all such trademarks.

FCP20N

60 / FCPF20N

60 600V N-C

hannel MO

SFET

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANYPRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES ITCONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES ORSYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:1. Life support devices or systems are devices or systems which,(a) are intended for surgical implant into the body, or (b) supportor sustain life, or (c) whose failure to perform when properly usedin accordance with instructions for use provided in the labeling,can be reasonably expected to result in significant injury to theuser.

2. A critical component is any component of a life support deviceor system whose failure to perform can be reasonably expectedto cause the failure of the life support device or system, or toaffect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

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FCPF20N60 600V N-Channel SuperFET

General description

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Features

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Contents •General description •Features •Product status/pricing/packaging •Order Samples

•Models •Qualification Support

SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

650V@TJ = 150°C Typ. RDS(on) = 0.15Ω Ultra low gate charge (typ. Qg = 75nC) Low effective output capacitance (typ. Coss .eff = 165pF) 100% avalanche tested

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16-Aug-2007mhtml:file://C:\TEMP\FCPF20N60T.mht

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Models

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Qualification Support Click on a product for detailed qualification data

Product Product status Pb-free Status Pricing* Package type Leads Packing method Package Marking Convention**

FCPF20N60 Full Production $4.80 TO-220F 3 RAIL

Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FCPF Line 3: 20N60

FCPF20N60T Full Production $4.96 TO-220F 3 RAIL

Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FCPF Line 3: 20N60T

FCPF20N60TYDTU Full Production $4.66 TO-220F 3 RAIL

Line 1: $Y (Fairchild logo) &Z (Asm. Plant Code) &E&3 (3-Digit Date Code) Line 2: FCPF Line 3: 20N60T

* Fairchild 1,000 piece Budgetary Pricing ** A sample button will appear if the part is available through Fairchild's on-line samples program. If there is no sample button, please contact a Fairchild distributor to obtain samples

Indicates product with Pb-free second-level interconnect. For more information click here. Package marking information for product FCPF20N60 is available. Click here for more information .

Package & leads Condition Temperature range Vcc range Software version Revision datePSPICE

TO-220F-3 Electrical/Thermal -55°C to 150°C 0V to 50V OrCAD 10.3 May 31, 2007

ProductFCPF20N60FCPF20N60TFCPF20N60TYDTU



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