EPC - The Leader in GaN | www.epc-co.com 1www.epc-co.com 1EPC - The Leader in GaN | Alex Lidow

The eGaN® FET Journey Continues

Ditching the Package to Drive Down GaN Transistor Costs

EPC - The Leader in GaN | www.epc-co.com 2

Power Switch Wish List

• Lower On Resistance • Faster• Smaller• Lower Thermal Impedance• Lower Cost• Better Package

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1 E-04

1 E-03

1 E-02

50 500 5000

RD

S(on

),SP

(Ω·c

m2 )

Breakdown Voltage (V)

RDS(on) =4 VBR

2

εo εo Ecrit3

Better Starting Material

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Better End Product

Bump View

100 V eGaN® FET6.05 x 2.3 mm

100 V Si MOSFET6.15 x 5.3 mm

Top View Bump View

RDS(on)=2.4 mΩ @ 5 VQG= 13 nC

RDS(on)=3.4 mΩ @ 10 VQG= 58 nC

Top View

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1

10

100

0 50 100 150 200 250

FOM

HS=

(QG

D+Q

GS2

)·RD

S(on

) (pC

·Ω)

Drain-to-Source Voltage (V)

EPC Gen 4EPC Gen 2Vendor AVendor BVendor CVendor DVendor E

Si MOSFETs 2014

VDS=0.5·VDSS, IDS=20 A

Faster Switching

5x

4.8x

8xeGaN FETs

5

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Impact of Package on Power Switch

Source/Gate ClipsSource/Gate Die Attach

MOSFET DieDrain Die Attach

PCB

PCB Gate ConnectionPCB Source

Connection

PCB Drain Connection

GateSource

Drain Pad

MOSFET

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eGaN FET Die

Drain/Source/GateConnections

PCB

PCB Source Connection

PCB Gate Connection

PCB Drain Connection

eGaN FET

A Better Power Package

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LGALGA eGaN FET

0

0.5

1

1.5

2

2.5

SO-8 LFPAK DirectFET LGA

Pow

er L

oss

(W)

Device Loss BreakdownPackageDie

0

0.5

1

1.5

2

2.5

SO-8 LFPAK DirectFET LGA

Pow

er L

oss

(W)

Device Loss BreakdownPackageDie

SO-8 LFPAK DirectFET

VIN =12 V VOUT =1.2 V IOUT =20 A fsw =1 MHz

Drain

Source

Gate

Reference: D. Reusch, D. Gilham, Y. Su, and F.C. Lee, C, “Gallium Nitride Based 3D Integrated Non-Isolated Point of Load Module,” APEC 2012

18%

82%

27%

73%

53%47%

82%18%

Impact of Package on Power Switch

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RƟCA

Thermal Management

Silicon SubstrateActive GaN Device Region RƟJC

RƟBA

RƟJB

TJ

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Thermal AdvancementsSingle Sided

Cooling

RƟJB ↓<< RƟJC↑ RƟJB ↓ RƟJC↓

Double Sided Cooling

RƟJB ↓ RƟJC↓

Double Sided Cooling

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Thermal Comparisons

0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟJB

, The

rmal

Res

ista

nce

(°C

/W)

Device Area (mm2)

RθJB_SiRθJB_GaN

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0

0.5

1

1.5

2

2.5

3

0 5 10 15 20 25 30 35

RƟJC

, The

rmal

Res

ista

nce

(°C

/W)

Device Area (mm2)

RθJC_SiRθJC_GaN

Thermal Comparisons

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Fan Speed=200 LFM fsw=300 kHz VIN=48 V VOUT=12 V IOUT=30 A

Improved Thermal Performance

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VIN=48 V, VOUT=12 V, 300 kHz

94

94.5

95

95.5

96

96.5

97

97.5

98

98.5

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32

Effic

ienc

y (%

)

Output Current (A)

80V MOSFET

60 % Reduction in Power Losses

80V eGaN FET

Better In-Circuit Performance

14

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Lifetime Prediction

0.0001%

1%

0.01%

20 yrs

10 yrs

EPC2016 Time to Failure vs VDS

150 °C

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5 5.5 6 6.5 7105

1010

1015

1020

1025

1030

Gate Bias (V)

Mea

n Ti

me

to F

ailu

re (s

)

MTTF vs VGS

10 yrs

5 5.5 6 6.5 710-20

10-15

10-10

10-5

100

105

Gate Bias (V)FI

T R

ate

(#/1

09 hou

rs)

FIT Rate vs VGS

1 FIT

Lifetime Prediction

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MOSFET vs. eGaN Costs*

Starting Material Epi GrowthWafer FabTestAssembly

OVERALL

2014 2016lower lower

~higherlowersamelower

lowersamelower

~same?

lower!~higher

* Product with the same on resistance and voltage rating

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Starting Material Epi GrowthWafer FabTestAssembly

OVERALL

2014 2016lower lower

~samelowersamelower

lowersamelower

~same?

lower!lower!

* Product with the same on resistance and voltage rating

Active die <3 mm2

MOSFET vs. eGaN Costs*

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A Look Into the Future

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Generation 2/4 Discrete HB

Generation 4 Monolithic 4:1 HB

+

GaN Integration

TSR

Top Switch (T) Synchronous Rectifier (SR) 33 % die size reduction

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Gen 22010-2013

40 V - 200 V

Generation 3Higher Frequency

LaunchedSept 2013

Half Bridge ICsLaunched

Sept 2014 – Jan 2015

Generation 42 X Performance Improvement

LaunchedJune 2014

300 - 450 V VoltageLaunched

Sept-Dec 2014

Moore’s Law Revival

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Gen 3 & 4 FETs and ICs2014

30 V - 450 V3 GHz

Generation 5Lower R x AQ2-Q4 2015

Higher Scale Integrated CircuitsQ2-Q4/2015

Higher PowerRF FETs and ICs

Broadband to 6 GHzQ3/2015

Moore’s Law Revival

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Summary

• Gallium nitride has enabled smaller and faster power transistors.

• The elimination of all packaging has unleashed additional performance advantages due to reduced size, cost, parasitic inductance, thermal efficiency, reliability, and cost.

• For the first time in 60 years there is a technology that is both higher performance and lower cost than silicon!

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