double side cooled module fs200r07a02e3 s6
TRANSCRIPT
DoubleSideCooledModule
FS200R07A02E3_S6
FinalDataSheetV3.1,2019-10-11
AutomotiveHighPower
2
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
1Features/Description
VCES = 700 VIC = 200 A
TypicalApplications DescriptionThe HybridPACKTM DSC L is a very compactsix-pack module targeting hybrid and electricvehicles.The module is based on Infineon’s long-termexperience developing IGBT power modules andTrench-Field-Stop IGBTs including matching diodeswith enhanced softness. Additionally, on-dieintegrated current sensors and module temperaturesensors (2 x NTC) support to monitor the IGBTstate. These features enable enhanced short-circuitprotection and intelligent control of the system.
The extreme compact package is realized by usingDouble Sided Cooling (DSC). This new assemblytechnology enables enhanced thermal andelectrical performance at high reliability andmechanical robustness.
Furthermore, this module allows combination withother existing Double Sided Cooling packages (e.g.HybridPACKTM DSC S) to extend the single inverterto a dual inverter configuration.
• AutomotiveApplications• HybridElectricalVehicles(H)EV
ElectricalFeatures• IncreasedBlockingVoltageCapabilityto700V• IntegratedCurrentSensor• LowInductiveDesign• Tvjop=150°C
MechanicalFeatures• 2.5kVAC1minInsulation• Doublesidedcooling• Compactdesign• RoHScompliant• IntegratedNTCtemperaturesensor
ProductName OrderingCodeFS200R07A02E3_S6 SP001661220
3
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
2IGBT,Inverter2.1MaximumRatedValuesParameter Conditions Symbol Value UnitCollector-emittervoltage Tvj = 25°C VCES 700 V
ContinuousDCcollectorcurrent TC = 65°C, Tvj max = 150°C IC nom 200 A
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A
Totalpowerdissipation TC = 25°C, Tvj max = 150°C Ptot 694 W
Gate-emitterpeakvoltage VGES +/-20 V
2.2CharacteristicValues min. typ. max.
Collector-emittersaturationvoltage IC = 200 A, VGE = 15 VIC = 200 A, VGE = 15 VIC = 200 A, VGE = 15 V
VCE sat
1.451.601.70
2.25V
Tvj = 25°CTvj = 125°CTvj = 150°C
Gatethresholdvoltage IC = 3.70 mA, VCE = VGE VGEth 5.00 5.80 6.50 VTvj = 25°C
Gatecharge VGE = -15 V ... 15 V QG 2.20 µC
Internalgateresistor RGint 2.0 ΩTvj = 25°C
Inputcapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Cies 13.5 nFTvj = 25°C
Reversetransfercapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Cres 0.36 nFTvj = 25°C
Collector-emittercut-offcurrent VCE = 450 V, VGE = 0 V ICES 0.1 mATvj = 25°C
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V IGES 400 nATvj = 25°C
Turn-ondelaytime,inductiveload IC = 200 A, VCE = 300 VVGE = -8/+15 VRGon = 3.6 Ω
td on
0.130.140.15
µsTvj = 25°CTvj = 125°CTvj = 150°C
Risetime,inductiveload IC = 200 A, VCE = 300 VVGE = -8/+15 VRGon = 3.6 Ω
tr0.070.070.07
µsTvj = 25°CTvj = 125°CTvj = 150°C
Turn-offdelaytime,inductiveload IC = 200 A, VCE = 300 VVGE = -8/+15 VRGoff = 3.6 Ω
td off
0.480.520.53
µsTvj = 25°CTvj = 125°CTvj = 150°C
Falltime,inductiveload IC = 200 A, VCE = 300 VVGE = -8/+15 VRGoff = 3.6 Ω
tf0.030.040.04
µsTvj = 25°CTvj = 125°CTvj = 150°C
Turn-onenergylossperpulse IC = 200 A, VCE = 300 V, LS = 25 nHVGE = -8/+15 V, di/dt = 3000 A/µs (Tvj = 150°C)RGon = 3.6 Ω
Eon
3.904.905.10
mJTvj = 25°CTvj = 125°CTvj = 150°C
Turn-offenergylossperpulse IC = 200 A, VCE = 300 V, LS = 25 nHVGE = -8/+15 V, du/dt = 2500 V/µs (Tvj = 150°C)RGoff = 3.6 Ω
Eoff
6.808.208.50
mJTvj = 25°CTvj = 125°CTvj = 150°C
SCdata VGE ≤ 15 V, VCC = 360 VVCEmax = VCES -LsCE ·di/dt ISC 1700 A
Tvj = 150°C tP ≤ 6 µs,
Thermalresistance,junctiontocase perIGBTClampingForceF=700N RthJC
0.1801)
K/W
Thermalresistance,casetoheatsink perIGBTλPaste=1W/(m·K)/λgrease=1W/(m·K)ClampingForceF=700N
RthCH
0.1701)
K/W
Temperatureunderswitchingconditions top continuous Tvj op -40 150 °C
1) with double sided cooling, evaluation according to HybridPackTM DSC application note
4
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
3Diode,Inverter3.1MaximumRatedValuesParameter Conditions Symbol Value UnitRepetitivepeakreversevoltage Tvj = 25°C VRRM 700 V
ContinuousDCforwardcurrent IF 200 A
Repetitivepeakforwardcurrent tP = 1 ms IFRM 400 A
I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 1800 A²s
3.2CharacteristicValues min. typ. max.
Forwardvoltage IF = 200 A, VGE = 0 VIF = 200 A, VGE = 0 VIF = 200 A, VGE = 0 V
VF
1.601.501.50
2.55V
Tvj = 25°CTvj = 125°CTvj = 150°C
Peakreverserecoverycurrent IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C)VR = 300 VVGE = -8 V
IRM
96.0130140
ATvj = 25°CTvj = 125°CTvj = 150°C
Recoveredcharge IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C)VR = 300 VVGE = -8 V
Qr
7.2013.516.0
µCTvj = 25°CTvj = 125°CTvj = 150°C
Reverserecoveryenergy IF = 200 A, - diF/dt = 2900 A/µs (Tvj = 150°C)VR = 300 VVGE = -8 V
Erec
1.703.303.80
mJTvj = 25°CTvj = 125°CTvj = 150°C
Thermalresistance,junctiontocase perdiodeClampingForceF=700N RthJC
0.2801)
K/W
Thermalresistance,casetoheatsink perdiodeλPaste=1W/(m·K)/λgrease=1W/(m·K)ClampingForceF=700N
RthCH
0.2701)
K/W
Temperatureunderswitchingconditions top continuous Tvj op -40 150 °C
4ModuleParameter Conditions Symbol Value UnitIsolationtestvoltage RMS, f = 50 Hz, t = 1min VISOL 2.5 kV
Materialofmodulebaseplate Cu
Internalisolation basicinsulation(class1,IEC61140) Al2O3
Creepagedistance terminaltoheatsinkterminaltoterminal dCreep 2.8 mm
Clearance terminaltoheatsinkterminaltoterminal dClear 2.4 mm
Comperativetrackingindex CTI > 600 min. typ. max.
Strayinductancemodule LsCE 20 nH
Storagetemperature Tstg -40 125 °C
Terminalconnectiontorque ScrewM5 M - Nm
Mounting force per clamp F 400 - 750 N
Weight G 72 g
5CurrentSensorParameter Conditions Symbol Min Typ Max UnitOutputvoltage VCE = 1.95 V, IC = 400 A
Rsense = 1.60 Ω, Tvj = 25°CVGE=15V
Vsense 0.26 V
1) with double sided cooling, evaluation according to HybridPackTM DSC application note
5
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
6NTC-Thermistor min. typ. max.
Parameter Conditions Symbol Value UnitRatedresistance TC = 25°C R25 5.00 kΩ
DeviationofR100 TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
Powerdissipation TC = 25°C P25 20.0 mW
B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
Specificationaccordingtothevalidapplicationnote.
6
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
7CharacteristicsDiagramsoutputcharacteristicIGBT,Inverter(typical)IC=f(VCE)VGE=15V
VCE [V]
IC [A
]
0,0 0,5 1,0 1,5 2,0 2,50
40
80
120
160
200
240
280
320
360
400Tvj = 25°CTvj = 125°CTvj = 150°C
outputcharacteristicIGBT,Inverter(typical)IC=f(VCE)Tvj=150°C
VCE [V]
IC [A
]
0,0 0,5 1,0 1,5 2,0 2,5 3,00
50
100
150
200
250
300
350
400VGE = 19VVGE = 17VVGE = 15VVGE = 13VVGE = 11VVGE = 9V
transfercharacteristicIGBT,Inverter(typical)IC=f(VGE)VCE=20V
VGE [V]
IC [A
]
5 6 7 8 9 10 11 120
40
80
120
160
200
240
280
320
360
400Tvj = 25°CTvj = 125°CTvj = 150°C
switchinglossesIGBT,Inverter(typical)Eon=f(IC),Eoff=f(IC)VGE=-8V/+15V,RGon=3.6Ω,RGoff=3.6Ω,VCE=300V
IC [A]
E [m
J]
0 40 80 120 160 200 240 280 320 360 4000
1
2
3
4
5
6
7
8
9
10Eon, Tvj = 125°CEoff, Tvj = 125°CEon, Tvj = 150°CEoff, Tvj = 150°C
7
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
switchinglossesIGBT,Inverter(typical)Eon=f(RG),Eoff=f(RG)VGE=-8/+15V,IC=200A,VCE=300V
RG [Ω]
E [m
J]
2 3 4 5 6 7 8 9 10 11 120
2
4
6
8
10
12
14Eon, Tvj = 125°CEoff, Tvj = 125°CEon, Tvj = 150°CEoff, Tvj = 150°C
transientthermalimpedanceIGBT,InverterZthJH=f(t)
t [s]
Zth
JH [K
/W]
0,001 0,01 0,1 1 100,01
0,1
1ZthJH : IGBT
i:ri[K/W]:τi[s]:
10,0330,001
20,1190,0304
30,1890,1782
40,00917,167
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)IC=f(VCE)VGE=-8/+15V,RGoff=3.6Ω,Tvj=150°C
VCE [V]
IC [A
]
0 100 200 300 400 5000
100
200
300
400
500IC, Modul
forwardcharacteristicofDiode,Inverter(typical)IF=f(VF)
VF [V]
IF [A
]
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,60
75
150
225
300
375
450
525
600
675
750Tvj = 25°CTvj = 125°CTvj = 150°C
8
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
switchinglossesDiode,Inverter(typical)Erec=f(IF)RGon=3.6Ω,VCE=300V
IF [A]
E [m
J]
0 50 100 150 200 250 300 350 4000
1
2
3
4
5
6Erec, Tvj = 125°CErec, Tvj = 150°C
switchinglossesDiode,Inverter(typical)Erec=f(RG)IF=200A,VCE=300V
RG [Ω]
E [m
J]
0 1 2 3 4 5 6 7 8 9 10 11 120
1
2
3
4
5Erec, Tvj = 125°CErec, Tvj = 150°C
transientthermalimpedanceDiode,InverterZthJH=f(t)
t [s]
Zth
JH [K
/W]
0,001 0,01 0,1 1 100,01
0,1
1ZthJH : Diode
i:ri[K/W]:τi[s]:
10,0780,001
20,2050,0257
30,2550,1394
40,01218,071
9
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
8Circuitdiagram
Pin Number Symbol I/O Function
1 P DC Supply (+) Positive Supply
2 N DC Supply (-) Negative Supply
3 U AC Output U Phase Output
4 V AC Output V Phase Output
5 W AC Output W Phase Output
6 PS Output P Terminal Voltage Sensing (IGBT Collector)
7 CS6 Output IGBT Current Sensor System 6
8 E6 Output IGBT Emitter Output System 6
9 G6 Input Gate Input System 6
10 CS5 Output IGBT Current Sensor System 5
11 E5 Output IGBT Emitter Output System 5
12 G5 Input Gate Input System 5
13 CS4 Output IGBT Current Sensor System 4
14 E4 Output IGBT Emitter Output System 4
15 G4 Input Gate Input System 4
16 T1 Output NTC 1 +
17 TG Ground NTC Ground
18 T2 Output NTC 2 +
19 CS3 Output IGBT Current Sensor System 3
20 E3 Output IGBT Emitter Output System 3
21 G3 Input Gate Input System 3
22 CS2 Output IGBT Current Sensor System 2
23 E2 Output IGBT Emitter Output System 2
24 G2 Input Gate Input System 2
25 CS2 Output IGBT Current Sensor System 1
26 E1 Output IGBT Emitter Output System 1
27 G1 Input Gate Input System 1
28 PS Output P Terminal Voltage Sensing (IGBT Collector)
(BottomDCB)
(Top DCB)
10
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
9Packageoutlines
11
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
10LabelCodes10.1ModuleCodeCodeFormat Data Matrix
Encoding ASCII Text
SymbolSize 16x16
Standard IEC24720 and IEC16022
CodeContent ContentModule Serial NumberModule Material NumberProduction Order NumberDatecode (Production Year)Datecode (Production Week)
Digit1 - 56 - 1112 - 1920 - 2122 - 23
Example(below)71549142846550549911530
Example
71549142846550549911530
10.2PackingCodeCodeFormat Code128
Encoding Code Set A
SymbolSize 34 digits
Standard IEC8859-1
CodeContent ContentBackend Construction NumberProduction Lot NumberSerial NumberDate CodeBox Quantity
IdentifierX1TS9DQ
Digit2 - 912 - 1921 - 2528 - 3133 - 34
Example(below)950566092X0003E0754389113915
Example
X950566091T2X0003E0S754389D1139Q15
12
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
RevisionHistoryMajor changes since previous revision
Revision History
Reference Date DescriptionV1.0 2015-07-31 -
V3.0 2016-12-13 final datasheet
V3.1 2019-10-11 Change of ordering code number
13
FS200R07A02E3_S6DoubleSideCooledModule
V3.1,2019-10-11Final Data Sheet
Terms&ConditionsofusageEdition2018-08-01
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