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1
G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
3D Double-Sided sensors for the CMS phase-2 vertex detector
3D Double-Sided sensors for the CMS phase-2 vertex detector
G. Pellegrini
M. LozanoG. PellegriniD. Quirion
M. FernándezR. JaramilloF.J. MuñozI. Vila
T. Rohe
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2
G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Outline
Motivation 3D pixel technology and manufacturing Electrical characterization PSI46 Read Out Chip (ROC) and interconnections Radiation resistance studies Summary
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Motivation
New generation of vertex detectors must deal with fluences about 1*10¹⁶ neq/cm²
Here we are going to assess the radiation resistance of 3D double-sided pixel sensors in terms of: Increase of the depletion voltage (Vfd) Reduction of the CCE
- LHC experiments are expected to undergo a constant increase of radiation levels, a possible HL-LHC scenario will get things tougher
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
CNM Production and Description
6 wafers:Wafers 5,6,7,8:
- 285 μm thicknessWafer 11:
-230 μm thicknessWafer 3:
- 285 μm thickness- Resistor bias grid
Each wafer includes:
•1 Full Module (8x2)•20 Single Chips•8 Strip sensors•12 Pad•Test structures
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Electrical characterization
Measured Vfd (pad) ~ 1.5 V
Using Coaxial approximation,Extrapolating to sensor geom:
Vfd (3D-Detector) ~ 9 V
- Very Homogeneous behavior
- Current Values in the expected range
100nA
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors Electrical measurements
MC Devices (8x2 detectors)
Largest 3D det. ever fabricated? 6.7 x 1.8cm2
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
A grid of polysilicon resistor was implemented for direct testing of pixels before flip-chip
• 2 extra mask level needed
• Rsq~1MΩ (defined by ion implantation)
Polysilicon resistors
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Biasing studies. Wafer 3
Same meas.
Only guard connected → “punch through” polarizationOnly bias connected → pixel by pixel polarization
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Full module has been designed with sparse pattern and single guard ring
* In the back side, two columns pattern.- Dense → reduced drift distance
Expected higher radiation resistance-Sparse → larger drift distance
Expected lower noise (lower capacitance)
Sparse and dense pattern
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Bump bonding and CCE measurements done at PSI
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors Scanning electron Microscope
SEM
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
- Bum bonding yield test- Using a 90Sr radioactive source- An uniform pattern has been observed. Including the holes on the PCB (between sensor and scintillator)
CCE measurements done at PSI by F.J. Muñoz
Bump bonding
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
In other cases:
Reason: There are passivation layers only in one side of the wafer (overlooked during production)
Problem: The stress during the second re-flow process, bows the Sensor breaking the bumps connections
Provisional Solution: To put some weight on top of the sensor-chip “sandwich” during 2nd reflow.
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Nice Pixel map, and landau fit:
MPV ~ 22 ke⁻
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Irradiation Campaign:
- Proton Cyclotron @ KIT (Karlsruhe), 25MeV protons:
1 x 10¹⁵ neq
/cm²5 x 10¹⁵ n
eq/cm²
- Tigra Reactor @ JSI (Ljubljana), continuous spectrum neutrons:
1 x 10¹⁵ neq
/cm²5 x 10¹⁵ n
eq/cm² (ongoing)
1 x 10¹⁶ neq
/cm²
4 pixel samples, 2 strips detectors and 2 pads up to each radiation fluence
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Charge Collection in irradiated samplesFull Depletion Voltage:
- Depletion Area grows in a 3D sensor horizontally- A new variable:
Er =
- When the Er saturates with bias voltage, we consider that we have depleted the maximum volume in the sensor
Num. of hits
Num. of triggers
90Sr Characterization
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
F= 1*10¹⁵ neq/cm²
2 samples with protons2 samples with neutrons
MPV vs bias Voltage in irradiated samples
No annealing
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Vfd=120 V
F= 1*10¹⁵ neq/cm²
Er
2 samples with protons2 samples with neutrons
Er vs bias Voltage in irradiated samples
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
Vfd=180 V
F= 5*10¹⁵ neq/cm²protons
Er
MPV and Er vs bias Voltage in irradiated samples
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
MPV vs FluenceV
fd =20V
Vfd =120V
Vfd =180V
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
FUTURE WORK:
- Studies on the ROC performance after 1*10¹⁶ neq/cm²- Test Beam @ DESY in March (Tracking Eff.)- Capacitance meas. In the two different patterns
CONCLUSIONS:
- Sensors show a good performance up to 5*10¹⁵ neq/cm²
- Mechanical stress reduces the bump-bonding yield. A problem to fix in a future production
- Still plenty of work ahead testing samples
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G. Pellegrini
The 9th LC-Spain meeting 8th "Trento" Workshop on Advanced Silicon Radiation Detectors
PSI46 ROCand interconnection
proccess7.9 mm
10.5 mm
52 x 80 pixel unit cells.4160 units150μm x 150μm
(CMS pixel ROC)