Download - 3. Dynamic SIMS 김경중.ppt [호환 모드]
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Dynamic SIMS의 원리 및 응용
김 경 중한국표준과학연구원
산업응용측정본부
표면분석교육2019/5/8 (수)
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS 응용- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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PhotonIon
Electron
PhotonIon
Electron
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Secondary Ion Mass Spectrometry(SIMS)
Introduction
이차이온질량분석법의 원리이차이온질량분석법의 원리
Out
InPhoton Ion Electron
PhotonIR, Raman XRF, XRD
LAMMAPSD, TPD
XPS, UPS
Ion PIXESIMS, ISS RBS, MEIS
IIE
ElectronIPES
SEM/EDS ESDAES, LEEDTEM, SEM
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~ eV
~ keV
~100 keV
~ MeV
Ion Beam Deposition
Sputtering (SIMS)Ion Beam Analysis (ISS)
Ion ImplantationIon Beam Analysis (MEIS)
Ion Beam Analysis (RBS)
DamagedRegion
이온빔 상호 작용이온빔 상호 작용
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Introduction
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Primary Ion (~10 keV)Secondary Ion (~10 eV)
Penetration Depth (~ 10 nm)
Information Depth (~ 1 nm)
Surface
Introduction
이차이온질량분석법의 원리이차이온질량분석법의 원리
Secondary Ion Mass Spectrometry (SIMS)
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Introduction
이차이온질량분석법의 분석 범위이차이온질량분석법의 분석 범위
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◈ Discovery of Electron - 1905, J. J. Thomson- Crooks tube- cathode rays
◈ Discovery of Ion- 1907, J. J. Thomson- anode ray tube- canal ray
◈ Separation of Ions - 1913, J. J. Thomson- composition of canal rays (ionized Ne)- through a magnetic and an electric field
History of SIMS
C A B
D
E
이차이온질량분석법의 역사이차이온질량분석법의 역사
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H. J. Liebl, J. Appl. Phys. 38, 5277 (1967)
History of SIMS
◈ Prototype of SIMS - 1949, Herzog and Viehböck- improved vacuum technology
◈ Magnetic sector SIMS- 1967, Liebel and Herzog- American NASA project- analysis of moon rocks
◈ Quadrupole SIMS- 1970s, K. Wittmack and C. Magee - quadrupole mass analyzer
◈ ToF-SIMS- the 1970s, Benninghoven- time-of flight mass spectrometer
이차이온질량분석법의 역사이차이온질량분석법의 역사
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◈ Magnetic sector SIMS
◈ Quadrupole SIMS
◈ ToF-SIMS
Quad 4550
IMS7F NanoSIMS50
TRIFT5
Cameca Cameca
Cameca
Ulvac PHIIONTOF
TOF-SIMS5
◈ HR-SIMS
이차이온질량분석기 개발 (상용장비)이차이온질량분석기 개발 (상용장비)
IMS1280-HR
Cameca
History of SIMS
SHRIMP-II
ASI
ADEPT-1010™
ULVAC-PHI
◈ Nano SIMS
Cameca
NanoSIMS 50L
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◈ Geology - isotopic ratio measurement- trace analysis- radiometric geochronology
◈ Metallurgy and Material sciences- quantification of major components (metal alloy)- quantification of minor components (C, N, O, S)- localization and identification of precipitates
◈ Semiconductor and Solar cell industry- quantification and in-depth distribution of dopants - quantification of major components (reference)- impurities bulk analysis
◈ Organic and Biology- image of elements in cells and tissues- identification of molecular peak
Industrial Application
이차이온질량분석법의 산업 응용이차이온질량분석법의 산업 응용
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2.0 nm SiO2
1 08 1 06 1 04 10 2 10 0 98 96
1 k
2 k
3 k
4 k
5 k
6 k
7 k
S iS iO
2
B ind in g E n e rg y (eV )
Oxide Thickness
Dist. of N in Oxide
Nano Shape (SEM, AFM)
Quant. of major comp.
Depth Dist. Of Dopants
Nano area strain Activated comp.
405 400 395 390
1k
2k
3k
4k
5k
6k
7k
N 1s
Binding energy (eV)
0 15 30 45 60 75
110 108 106 104 102 100 98 96 940
1k
2k
3k
4k
5k
6kSi 2p
XP
S In
ten
sity
(cp
s)
Binding energy (eV)
0 15 30 45 60 75
0 50 100 150 200 250 300 3501015
1016
1017
1018
1019
1020
10B
Co
nce
ntr
atio
n (
ato
ms/
cm3 )
Sputter Depth (nm)
Qunat. of minor comp.
0 50 100 150 200
0
20
40
60
80
100 Si Ge
Co
nce
ntr
atio
n (
%)
Depth (nm)0 50 100 150 200
100
101
102
103
104
105
106
Si Ge
Inte
nsi
ty (
cps)
Depth (nm)
Industrial Application
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차세대 반도체 분석 응용차세대 반도체 분석 응용
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Total Area Spectrum
Primary Ion Beam
Total Ion Image
m/z
Sample
m/z
Region 1 Spectrum
m/z
Region 2 Spectrum
Chemical Map 1
Chemical Map 2
Industrial Application
유기 및 바이오 분자 분석유기 및 바이오 분자 분석
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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Instrumentation
Schematic Diagram of SIMS Instrument
Mass analyser
Ion gun
Detector
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Cs sourceDuoplasmatron
source
Accel-Decel
PBMF
Isolation valve
Primary Faraday cup
Airlock system
Cs source isolation valve
E.S.A Energy slit
Exit slit
E.M.
Post Acc.
Faraday cup
Channel plate
Fluorescent screen
Sample-10 to +10 kV
Fieldaperture
Lens
Diaphragm, slit (automation option)
Electrostatic sector
Magnetic sector
Deflector
Stigmator
Entrance slit
N.E.G.Isolation valve
Contrast aperture
Laminated magnet
Instrumentation
Cameca IMS-7f SIMS
Primary Ion gun
Mass analyser
Detector
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Instrumentation
Primary Ions
Duoplasmatron (Ar+, O2+) Surface Ionization (Cs+)
- Argon : sputtering, surface cleaningAES, XPS sputter depth profiling
- Oxygen : positive SIMSEnhanced ion yield for positive elements
- Cesium : negative SIMSEnhanced ion yield for negative elements
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- Quadrupole :Relatively inexpensiveFast switchingControl of incidence angle : ultra high depth resolution
- Magnetic Sector :High transmission : ultimate detection limitHigh mass resolution : no mass interference
- Time-of-Flight :High molecular weight determinationRapid surveyUltra low dose: surface contamination analysis
Instrumentation
Mass Analyzer
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U+Vcos(wt)
- relatively cheap- fast switching fast analysis- high incidence angle high depth resolution- insulator analysis
Instrumentation
Quadrupole Mass Analyzer
- poor mass resolution- poor transmission low detection limit
- low mass range
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K.E. = 0.5 mv2 = eV
mv2 / r = Hev
mveHr =
1H
=me2V
me
H2r2
2V=
double focusing electorostatic / magnetic sector:- high transmission : ultimate detection limit, impurity bulk analysis- high mass resolution : no mass interference- ion microscope, higher mass range
Instrumentation
Magnetic Sector Mass Analyzer
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Ion Gun
Spectrum
Ion Mirror
Focusing
Raster
Target
PulsingDetector
Transport Optics
Extractor
Electron Flood Gun
- high sensitivityhigh transmission
- high mass resolution10,000
- high mass rangeup to 10,000uorganic & bio molecule anal.
- rapid survey
K.E. = qV = 1/2 mv2
t = L/v = L / (2qV/m)1/2
m/q = (2V/L2)t2
Instrumentation
Time-of-Flight Mass Analyzer
Reflector의 역할
TOF의 특징
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Instrumentation
Comparison of Mass Spectrometer
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Electron Multipliers Faraday Cup
Instrumentation
Detectors
Micro-Channel Plate
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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Fundamentals
Dynamic SIMS vs Static SIMS
Dynamic SIMS and static SIMS are distinguished by the primary ion dose acceptable duringanalysis. The minimum dose in a dynamic SIMS measurement is ∼1017 ions/cm2.
For static SIMS, the probability of secondary ions being detected from sample surface alreadymodified by previous ion impact should be≪1.
In practice, the acceptable primary ion dose density is to <1013 ions/cm2 per experiment.
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Fundamentals
◈ Working dynamic range (Dw) : around 10 orders of magnitudein concentration (i.e. from 5 × 1022 to 5 × 1012 atoms cm−3).
◈ Detection limit :1013 ~ 1016 atoms cm−3 for most impurities insemiconductors
◈ Lateral resolution : 20 nm
◈ Depth resolution : sub-nm
Dynamic SIMS
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Fundamentals
Interaction of the Primary Beam
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- : primary particle flux
- : sputter yield
- : ionization probability
- : fractional concentration
- : analysis system transmission
secondary ion current ( )I ms
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0 5 10 15 20 25-6.0
-4.0
-2.0
0.0
2.0
4.0
Ionization Potential
Log
(Rel
ativ
e Io
n Y
ield
)
Ionization Potential
Fundamentals
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Relative Sensitivity Factors (Positive Ion)
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Fundamentals
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Relative Sensitivity Factors (Positive Ion)
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0 1 2 3 4-5
-4
-3
-2
-1
0
1
2
Electron Affinity
Log
(Rel
ativ
e Io
n Y
ield
)
Electron Affinity
Fundamentals
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Relative Sensitivity Factors (Negative Ion)
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Fundamentals
30
Relative Sensitivity Factors (Negative Ion)
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O2+ Primary
Positive Secondary
Cs+ PrimaryNegative Secondary
Fundamentals
Relative Sensitivity Factors
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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Primary ions
Direct Recoils
Cascade Mixing
Collective relocation
Sputtering
Original Surface
Eroding Surface
Internal Plane
Fundamentals
Interaction of the Primary Beam
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◈ Preferential Sputtering
◈ Atomic Mixing
(Knock-on and Cascade)
◈ Radiation-induced Migration
(Diffusion, Segregation)
◈ Surface Topography
Interaction between the primary ion beam and the sample leads to complex masstransport effects, atomic mixing, radiation enhanced diffusion and segregation etc. in the nearsurface region, because of energy deposition by the beam and the accretion of probe atoms.
Collision Cascade Surface Change by Ion Sputtering
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93 94 95 96 97 98 99 1000
50
100
150
200
250
300
350
400
450
500
2 nm
As Received (xxxx)After Sputtering (oooo)
W in
ten
sity
(co
un
ts)
Energy (keV)
800 600 400 200 0
Si 2s
W 4p3/2
in situ XPS W 31.3% Si 68.7%
W 4d
After sputteringW 52.9% Si 47.1 % Si 2p
W 4f
Inte
nsi
ty (
a.u
.)
Binding Energy (eV)
Fundamentals
Interaction of the Primary Beam
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Preferential Sputtering
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Ion beam mixing
Fundamentals
작은 에너지 및 큰 입사각에 의해 이온빔 혼합이 효율적으로 감소함
Interaction of the Primary Beam
78 80 82 84 86 88 90 92
0.0
0.5
1.0
1.5
2.0
2.5
Surface peak+ 0.6 nm
5.5 nm
clean Si(100)
0o
45o
60o
80o
Inte
nsity
( C
ount
s )
Energy ( keV )
500 eV O2+
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Ra
tio
of
dec
ay l
eng
th
elements in Si
10 keV Ar+
oxygen leak
Heat of formation / mole of oxygen (kcal/mole)
12 keV O2+
2o incidence
Cu Si 200 keV, 1 x 1015 cm-1
5.5 keV O2+
64o incidence
Depth (nm)
63C
u+
Rel
ativ
e In
ten
sity
Surface Segregation
Fundamentals
108 106 104 102 100 98
XP
S In
ten
sity
(A
rb. U
nit
)
Binding Energy (eV)
Si 2p
5keV O2+
입사각 (o)
60
45
37
30
25
15
0
36
Interaction of the Primary Beam
이온빔 스퍼터링에 따른 매질 물질의 화학상태 변화, 표면에너지 차이에 의한 물질 이동
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7 keV O2+ Cr/Ni ML
Surface Topography (Ripple)
Appl. Phy. Lett., 60, 1178 (1992)
Ni Cr
Ni Cr
Cr Ni
Ni Cr
Cr
Si
Fundamentals
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7 keV O2+ Fe/Si SL
Surface Topography (Hollow, Island)Fundamentals
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7 keV O2+ Ta/Si
Appl. Phys. Lett. 69, 2483 (1996)
Surface Topography (Crater)Fundamentals
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0 50 100 150 200 250 300100
101
102
103
104
105
106
Inte
ns
ity(
cps)
Sputter Depth(nm)
Si As
0 50 100 150 200 250 300100
101
102
103
104
105
106
Sputter Depth(nm)
Si AsSi
14.5 keV C600.5 keV Cs
“Hershey Kisses”Platelet like grain
Surface Topography (Hershey Kisses)
C60+ As-Si/Si ML
Appl. Surf. Sci. 252, 6521 (2006)
Fundamentals
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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Analysis Methods
Surface Spectroscopy Surface Imaging Depth Profiling
SIMS를 이용한 분석 기법SIMS를 이용한 분석 기법
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Analysis Methods
SIMS를 이용한 분석 기법SIMS를 이용한 분석 기법
분석 장비 분석 기술
AES
XPS/UPS
SIMS / TOF-SIMS
XRR/XRD
Raman/FTIR
RBS/MEIS
TEM/SEM/EDS
주성분 정량 분석
미량 성분 정량 분석
깊이 분포 분석
공간 분포 분석
박막 두께 측정
전기적 특성 평가
화학 상태 분석
결정 구조 분석
성분 원소 분석
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Survey Mass Spectrum
Analysis Method 1
SIMS 원소분석SIMS 원소분석
Mass spectrometry is inherently background free because the mass spectrum isdiscrete and not superimposed.
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XPS survey spectrum of Si wafer AES survey spectrum of CuInSe2 film
EN(E) spectrum
EdN(E)/dE spectrum
SIMS 원소분석법 - XPS 및 AES와 비교SIMS 원소분석법 - XPS 및 AES와 비교Analysis Method 1
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R=m/∆m
High Mass Resolution
46
원소분석 - 고질량분해능원소분석 - 고질량분해능Analysis Method 1
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Even at a modest mass resolution (e.g. M/ΔM = 1000) a well set up magnetic or quadrupoleSIMS spectrometer should be capable of a rejection ratio (IM/I(M±1)) of >108, where I(M) is theintensity recorded at mass M, etc.
원소분석 - 고질량분해능원소분석 - 고질량분해능Analysis Method 1
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SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
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미량성분 정량분석미량성분 정량분석
49
Analysis Method 2
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CdIId
tCIRSF
bi
m
- RSF: relative sensitivity factor of the impurity withrespect to the matrix
- : ion implant fluence in atoms/cm2
- C: number of measurements or data cycles- d: crater depth in cm - ∑Ii : sum of impurity isotope secondary ion counts- Ib : background ion intensity of Ii in counts/cycle- t : analysis time in s/cycle
mii IRSFIX /][ - Xi : concentration of impurity- Ii : intensity of impurity- Im : intensity of matrix
0 100 200 300 4001015
1016
1017
1018
1019
1020
10B
Co
nce
ntr
atio
n (
ato
ms/
cm3 )
Sputter Depth (nm)
- Certification method: NDP
- Dose: 1.018 x1015 atoms/cm2
Uncertainty: 0.035 x1015 atoms/cm2
- Peak conc. of 10B: 8.37x1019/cm3
NIST CRM 2137
50
미량성분 정량분석미량성분 정량분석Analysis Method 2
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0 200 400 600 800 1000 1200 1400100
101
102
103
104
105
106
107
108B
Ti
Ga
SnAg Si
Inte
nsi
ty (
cps)
Sputter Depth (nm)0 200 400 600 800 1000 1200 1400
100
101
102
103
104
105
106
107
108
A
Ti
Ga
SnAg Si
Inte
nsi
ty (
cps)
Sputter Depth (nm)
0 200 400 600 800 1000 1200 14001016
1017
1018
1019
1020
1021
B
A
P
Co
nce
ntr
atio
n (
ato
ms/
cm3 )
Sputter Depth (nm)0 200 400 600 800 1000 1200 1400
1016
1017
1018
1019
1020
1021
B
B
P
Co
nce
ntr
atio
n (
ato
ms/
cm3 )
Sputter Depth (nm)
51
미량성분 정량분석미량성분 정량분석
정상소자 불량소자
Analysis Method 2
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0 200 400 600 800 1000100
101
102
103
104
105
106
107
10B+
29Si2
+
28Si2
+
Inte
nsi
ty
Sputter Time (s)0 200 400 600 800 1000
100
101
102
103
104
105
106
107
10B+
29Si2
+
28Si2
+
Inte
nsi
ty
Sputter Time (s)
Secondary Reference
Test Sample
Quantification of B in Si (ISO-14237)
0 100 200 300 4001015
1016
1017
1018
1019
1020
10B
Co
nce
ntr
atio
n (
ato
ms/
cm3 )
Sputter Depth (nm)
10B+
Primary Reference
RSF Tm
Sii
Ti
Ti IRSFIX /][ S
miiSi
Si IRSFIRSF /][
= ImS
= ImS
= ImT
= ImT
52
미량성분 정량분석미량성분 정량분석Analysis Method 2
27
Division of Industrial Metrology 53
SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
Division of Industrial Metrology
◈ Pure Element-RSF (PE-RSF) : determined from pure elements(matrix effect, sputtering effect)
: 측정 시료 중 원소 A의 조성
: 측정 시료에서 측정된 원소 A의 세기
: 순수한 시료에서 측정된 원소 A 세기 (PE-RSF)
unkiXunkiI
iS
0 20 40 60 80 1000
20
40
60
80
100
Bulk Composition, Co at. %
Su
rfac
e C
om
po
siti
on
, Co
at.
%
0 20 40 60 80 1000
20
40
60
80
100
Bulk Composition, Au at. %
Co
mp
osi
tio
n b
y X
PS
, Au
at.
%
(a) Co-Ni alloy (c) Au-Cu alloy
0 20 40 60 80 1000
20
40
60
80
100
Co
mp
osi
tio
n b
y X
PS
(P
t at
.%)
Bulk Composition (Pt at. %)
(d) Pt-Co alloy
0 20 40 60 80 1000
20
40
60
80
100
Bulk Composition, Fe at. %
Co
mp
osi
tio
n b
y X
PS
(F
e at
.%)
(b) Fe-Ni alloy
54
)(
)(
1
n
j junkj
iunkiunk
iSI
SIX
주성분 정량분석주성분 정량분석Analysis Method 3
28
Division of Industrial Metrology
◈ Average Matrix-RSF (AM-RSF) : matrix effect correction(sputtering effect)
◈ Alloy Reference-RSF (AR-RSF) : from an alloy reference
3
)()(
)()(
A
B
BBAAB
AABABAAB a
a
EE
EEF
1
2
2 ln
E
D
E
CEEE p
j
n
j junkj
iiunkiunk
iFSI
FSIX
)(
)(
1
)(
)(
1
n
j
ARj
unkj
ARi
unkiunk
iSI
SIX
5555
주성분 정량분석주성분 정량분석Analysis Method 3
Division of Industrial Metrology
0 50 100 150 200101
102
103
104
105
106
58Ni
56Fe
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
Sputter Depth (nm)
Average
ARRSF from a Fe51-Ni49 Alloy
INi
IFe
0 50 100 150 2000
20
40
60
80
100
50%
51%
56Fe
Co
mp
osi
tio
n (
Fe
At.
%)
Sputter Depth (nm)
Compositional DP of theFe51-Ni49 Alloy Film by C60
)( 51FeC
IR
Fe
FeFe
)( 51FeC
IR
Ni
NiNi
)( NiNiFeFe
FeFeFe RIRI
RIX
56
주성분 정량분석 (Fe-Ni 합금)주성분 정량분석 (Fe-Ni 합금)Analysis Method 3
29
Division of Industrial Metrology
0 20 40 60 80 1000
20
40
60
80
100
Co
mp
osi
tio
n b
y C
60 S
IMS
(F
e at
.%)
ICPMS C60
SIMS 27.61 26.87 50.59 50.59 77.80 78.21
m = 1.023 (0.005), C = -1.289 (0.274)
XC
60SIMS
=mXICPMS
+ C
Composition by ICP-MS (Fe at. %)
101
102
103
104
105
106
58Ni
56Fe
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
101
102
103
104
105
106
58Ni
56Fe
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
0 50 100 150 200101
102
103
104
105
106
58Ni
56Fe
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
Sputter Depth (nm)0 50 100 150 200
0
20
40
60
80
100
79%78%
56Fe
Co
mp
osi
tio
n (
Fe
At.
%)
Sputter Depth (nm)
0
20
40
60
80
100
26%
27%
56Fe
Co
mp
osi
tio
n (
Fe
At.
%)
0
20
40
60
80
100
50%51%
56Fe
Co
mp
osi
tio
n (
Fe
At.
%)
Good linear relationship
Original SIMS DPsComposition DPsHomogeneity with depth Quantification
Fe28Ni72
Si(100)
Fe51Ni49
Si(100)
Fe78Ni22
Si(100)
Average
Average
Average
57
주성분 정량분석 (Fe-Ni 합금)주성분 정량분석 (Fe-Ni 합금)Analysis Method 3
Division of Industrial Metrology
0 20 40 60 80 1000
20
40
60
80
100
m = 1.022(0.019), c = -0.902(0.888)
XRBS
= mXICPAES
+ c
Nom. RBS66.3 66.639.8 40.318.3 17.5
Co
mp
osi
tio
n b
y R
BS
(P
t at
.%)
Composition by ICP-OES (Pt at. %)
Pt18Co82
Si(100)
Pt40Co60
Si(100)
Pt66Co34
Si(100)
Certification by ICP-OESSamples
0 20 40 60 80 1000
20
40
60
80
100
Nom. C60
SIMS 18.3 18.9 39.8 39.8 66.3 62.1
m = 0.898 (0.037), C = 3.039 (1.705)
XPt
SIMS=m XPt
nom+ C
Co
mp
osi
tio
n b
y C
60 S
IMS
(P
t at
.%)
Composition by ICP-OES (Pt at. %)
RSF from Pt40Co60 Alloy
58
주성분 정량분석 (Pt-Co 합금)주성분 정량분석 (Pt-Co 합금)Analysis Method 3
30
Division of Industrial Metrology
0
20
40
60
80
100 Si Ge
Co
nc
entr
ati
on
(%
)
0
20
40
60
80
100 Si Ge
Co
nc
entr
ati
on
(%
)
0
20
40
60
80
100 Si Ge
Co
nc
entr
ati
on
(%
)
0
20
40
60
80
100 Si Ge
Co
nc
entr
ati
on
(%
)
0 50 100 150 200 2500
20
40
60
80
100 Si Ge
Co
nc
entr
ati
on
(%
)
Depth (nm)
Average
Average
Average
Average
100
101
102
103
104
105
106
Si Ge
Inte
ns
ity
(cp
s)
100
101
102
103
104
105
106
Si Ge
Inte
ns
ity
(cp
s)
100
101
102
103
104
105
106
Si Ge
Inte
ns
ity
(cp
s)
100
101
102
103
104
105
106
Si Ge
Inte
ns
ity
(cp
s)
0 50 100 150 200 250100
101
102
103
104
105
106
Si Ge
Inte
ns
ity
(cp
s)
Depth (nm)
Average
RII
IX
GeSi
SiSi /
RII
IX
SiGe
GeGe
0 20 40 60 80 1000
20
40
60
80
100
Co
mp
osi
tio
n b
y S
IMS
(S
i at
%)
Composition by RBS (Si at %)
m = 0.932 (0.032) c = 4.827 (2.079)
XSIMS
=mXRBS
+ c
0 20 40 60 80 1000
20
40
60
80
100
Co
mp
osi
tio
n b
y S
IMS
(S
i at
%)
Composition by RBS (Si at %)
m = 1.039 (0.043) c = 0.009 (2.820)
XSIMS
=mXRBS
+ c
RBS 2keV
33.6 37.1
52.4 52.4
64.7 63.7
77.1 76.7
87.3 87.2
RBS 5keV
33.6 36.6
52.4 52.4
64.7 65.6
77.1 81.0
87.3 91.4
(a) 2 keV
(b) 5 keV
Ge13Si87
Si(100)
Ge23Si77
Si(100)
Ge35Si65
Si(100)
Ge48Si52
Si(100)
Ge66Si34
Si(100)
59
주성분 정량분석 (Si-Ge 합금)주성분 정량분석 (Si-Ge 합금)Analysis Method 3
Division of Industrial Metrology
Total Number Counting
composition of whole film
average composition
0 500 1000 1500 2000100
101
102
103
104
105
106
107
Sputter Depth (nm)
Se
GaCuIn
Inte
nsi
ty (
cp
s)
)( ARi
ARi
ARi CIS
Depth Profiling of an Alloy Reference Film
RSFs from the integrated intensities
Certification by ICP-MS
solution of whole film
average composition
CIGS
glass
glass
Film material is selectively dissolved in a solvent
solvent
The solution including film material is analyzed by ICP-
MS
Quantitative Analysis
Compositional Depth
Profiling
Quantitative Analysis
0 500 1000 1500 2000100
101
102
103
104
105
106
107
Sputter Depth (nm)
Se
GaCuIn
Inte
nsi
ty (
cp
s)
0 500 1000 1500 20000
20
40
60
80
100
Sputter Depth (nm)
Se
GaCu
In
Co
mp
osi
tio
n (
at%
)
100)(
)(
1
n
j
ARj
unkj
ARi
unkiunk
iSI
SIX
60
주성분 정량분석 (CIGS 박막)주성분 정량분석 (CIGS 박막)Analysis Method 3
31
Division of Industrial Metrology
Laboratory Country SIMS XPS AES EDX XRF
NMIand DI(9)
BAM Germany ○ ○
INPL Israel ○
KRISS Korea ○
NIM China ○
NIST USA ○ ○
NMIJ Japan ○
NMISA South Africa ○
NPL UK ○ ○
PTB Germany ○
nonNMI(6)
CNU Korea ○
NIMS Japan ○
KIST Korea ○
LSA UK ○
NNFC Korea ○
ZSW Germany ○
Number of Data 6 4 4 2 2
61
주성분 정량분석 (CIGS 박막) - 국제 RRT주성분 정량분석 (CIGS 박막) - 국제 RRTAnalysis Method 3
Division of Industrial Metrology
1 2 3 4 5 6 7 8 9 10 11 12 135.5
6.0
6.5
7.0
7.5
Ga
Ato
mic
Fra
ctio
n (
at%
)
1 2 3 4 5 6 7 8 9 10 11 12 1346
47
48
49
50
51
52
53
54
Se
Ato
mic
Fra
ctio
n (
at%
)
1 2 3 4 5 6 7 8 9 10 11 12 1321
22
23
24
25
26
27
Cu
Ato
mic
Fra
ctio
n (
at%
)
1 2 3 4 5 6 7 8 9 10 11 12 1316
17
18
19
20
21
22
In
Ato
mic
Fra
ctio
n (
at%
)
● SIMS ■ XPS ♦ AES ▲ XRF ▼ EPMA
%59.0=%46.2= atUref %47.0=%46.2= atUref
%16.0=%46.2= atUref %24.1=%46.2= atUref
62
주성분 정량분석 (CIGS 박막) - 국제 RRT주성분 정량분석 (CIGS 박막) - 국제 RRTAnalysis Method 3
32
Division of Industrial Metrology
Compositional Depth Profiling of Multi-element alloy film
0 500 1000 1500 2000100
101
102
103
104
105
106
107
Mo
Se
Ga
Cu
In
Inte
nsi
ty (
cps)
Sputter Depth (nm)0 500 1000 1500 2000
100
101
102
103
104
105
106
107
Mo
Se
Ga
Cu
In
Sputter Depth (nm)0 500 1000 1500 2000
100
101
102
103
104
105
106
107
Mo
Se
Ga
Cu
In
Sputter Depth (nm)0 500 1000 1500 2000
100
101
102
103
104
105
106
107
Mo
Se
Ga
Cu
In
Sputter Depth (nm)
0 500 1000 1500 20000
10
20
30
40
50
60
In
Ga
Cu
MoSe
Co
mp
osi
tio
n (
at. %
)
Sputter Depth (nm)0 500 1000 1500 2000
0
10
20
30
40
50
60
Sputter Depth (nm)0 500 1000 1500 2000
0
10
20
30
40
50
60
Sputter Depth (nm)0 500 1000 1500 2000
0
10
20
30
40
50
60
Sputter Depth (nm)
63
주성분 정량분석 (CIGS 박막)주성분 정량분석 (CIGS 박막)Analysis Method 3
Division of Industrial Metrology 64
SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
33
Division of Industrial Metrology
◈ Destructive: Sputter Depth Profiling - Analysis of sputtered particle:
SIMS, SNMS, GD-OES, GD-MS
- Analysis of residue surface: AES, XPS, ISS
◈ Non-destructive Depth Profiling- RBS, MEIS- HI-ERDA- AR-XPS, XES
◈ Cross-Sectional Line Scan- SEM/EDX, SEM/WDX, TEM/EDX- SAM- TOF-SIMS
65
깊이분포도 분석법의 종류깊이분포도 분석법의 종류Analysis Method 4
Division of Industrial Metrology
◈ Special Features- High Sensitivity(ppm, ppb)
- Analysis of all Elements with Isotopes
- Rapid Analysis
- Good Depth Resolution
- Microanalysis with Focused Ion Beam
◈ Non-destructive Depth Profiling- Severe Artifacts
- Difficult Quantification
- Destructive
66
SIMS 깊이분포도 분석법의 특성SIMS 깊이분포도 분석법의 특성Analysis Method 4
34
Division of Industrial Metrology
0 50 100 150 200 250 300 35010
0
101
102
103
104
105
29Si
74Ge
Sec
on
dar
y Io
n C
ou
nt
Sputter Depth (nm)
0 50 100 150 200 250 300 350
0
20
40
60
80
100
29Si
74Ge
Rel
ativ
e C
om
po
siti
on
(%
)
Sputter Depth (nm)
0 100 200 300 400 500 600 700100
101
102
103
104
105
29Si
74Ge
Sec
on
dar
y Io
n C
ou
nt
Sputter Time (s)
0 50 100 150 200 250 300 350
0
20
40
60
80
10029Si
74Ge
Rel
ativ
e C
om
po
siti
on
(%
)
Sputter Depth (nm)
1. Calib. of depth scale
Stylus Profilometer, (Step-height Standardor multiple deltalayer)
2. Conversion to comp. Prof.
Si50Ge50 Alloy CRM
3. Calib. of etching rate
Si/Ge multilayer CRM
67
깊이분포도 분석깊이분포도 분석Analysis Method 4
Division of Industrial Metrology 68
Si/Ge 델타다층박막 CRM 두께 인증
Si layer 1 2 3 4 5 6
Thick. 39.5 39.6 39.1 39.0 39.1 37.8
Sm 0.27 0.35 0.24 0.19 0.50 0.45
Um 0.12 0.13 0.09 0.08 0.19 0.17
Ur 0.09 0.09 0.09 0.09 0.09 0.09
Uc 0.15 0.16 0.13 0.12 0.21 0.19
U (nm) 0.29 0.31 0.25 0.24 0.41 0.38
0 250 500 750 1000
-600
-400
-200
0
200
CB
A
Crater Size (m)
Cra
ter
Dep
th (
nm
)
0 100 200 300100
101
102
103
104
105
106
107
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
Sputter Depth (nm)0 200 400 600 800 1000 1200
100
101
102
103
104
105
106
107
Interface
301.47 nm
Sec
on
dar
y Io
n C
ou
nt
(cp
s)
Sputter Time (s)
분석 깊이 단위 변환( s nm )
0 50 100 150 200 250 300100
101
102
103
104
105
29Si 74Ge
Inte
nsi
ty (
cou
nts
/sec
)
0 50 100 150 200 250 300100
101
102
103
104
105
29Si 74Ge
0 50 100 150 200 250 300100
101
102
103
104
105
29Si 74Ge
0 50 100 150 200 250 300100
101
102
103
104
105
Sputter Depth (nm)
Inte
nsi
ty (
cou
nts
/sec
)
29Si 74Ge
0 50 100 150 200 250 300100
101
102
103
104
105
Sputter Depth (nm)
29Si 74Ge
0 50 100 150 200 250 300100
101
102
103
104
105
29Si 74Ge
Sputter Depth (nm)
0 50 100 150 200 250 3000
50
100
150
200
250
300
6 Spectra - HMax
m = 0.985 (0.005)C = 2.544 (0.695) nm
dstylus
= mdnom
+ c
Dep
th b
y S
tylu
s, D
styl
us (
nm
)
Nominal Depth, Dnom
(nm)
일반적인 SIMS 분석 깊이 보정법
깊이분포도 분석 - 분석 깊이 보정깊이분포도 분석 - 분석 깊이 보정
◈ Depth Scale Calibration
Analysis Method 4
35
Division of Industrial Metrology 69
Nom 1 2 5 6 7 8 9 10 11 12 Ave. stdev RSD (%)
2nd 79.04 73.90 79.10 76.20 77.32 75.50 76.70 81.76 71.40 68.70 77.02 - - -
4th 157.22 151.00 157.30 152.17 153.91 153.80 155.80 163.12 147.80 145.80 157.12 - - -
6th 234.13 226.00 234.80 230.87 229.62 228.20 232.30 232.02 221.80 219.60 229.93 - - -
slope - 0.981 1.000 0.997 0.982 0.985 1.003 0.969 0.970 0.973 0.986 0.99 0.01 1.24
offset - -3.476 -0.345 -3.281 -0.358 -1.888 -2.380 7.022 -5.058 -7.866 0.081 - - -
◈ 실험내용- 3개의 SIMS 깊이분포도 분석 후 크레이터 깊이를 측정하여 델타 층의 위치 비교
◈ 참여업체 : 12기관- KIST, RIST, ETRI, LG-ELITE, Samsung SDI, SAIT, KBSI, Hynix Sem.,
Samsung Elec. Dongbu Elec., KRISS, Samsung LCD
◈ 공동분석 결과- 평균치가 1% 이내에서 인증 결과와 잘 일치함- 실험실 간의 결과가 2% 이내에서 잘 일치함
깊이분포도 분석 - 분석 깊이 보정깊이분포도 분석 - 분석 깊이 보정
◈ Depth Scale Calibration
Analysis Method 4
Division of Industrial Metrology
Determination of sputtering rate in the surface region
(1) Calibration by sputtering rate
(2) Calibration by crater depth
(3) Uncertainty of calibrated depth
70
깊이분포도 분석 - 분석 깊이 보정깊이분포도 분석 - 분석 깊이 보정
0 50 100 150 200 250 300100
101
102
103
104
105
106
107
10B+
11B+
29Si2
+
28Si2
+
Inte
nsi
ty
Sputter Time (s)
Transient Behavior
◈ Depth Scale Calibration : nm surface region
Analysis Method 4
36
Division of Industrial Metrology
◈ Factors Affecting on SIMS Depth Resolution
◈ Instrumental Factors- Edge Effect- Ion Beam Components (Impurities and Neutrals)
- Residual Gas Adsorption
◈ Ion Beam-Surface Interaction- Atomic Mixing - Preferential Sputtering- Sputter-induced Surface Roughness- Matrix Effects- Radiation-induced Migration (Diffusion, Segregation)- Chemical Effects (Decomposition, Compound Formation)
71
깊이분포도 분석 - 깊이분해능 평가깊이분포도 분석 - 깊이분해능 평가Analysis Method 4
Division of Industrial Metrology 72
◈ Depth Resolution
Measure of the ability to localize a concentration measurement at a depth anddistinguish between features at different depths. It is usually expressed as a parameterextracted from the measured profile of a thin plane of impurity grown by MBE or CVD.
Deltalayer FilmMultilayer Film
Depth ProfilingDepth ProfilingAnalysis Method 4
37
Division of Industrial Metrology 73
22
21
0
/5.0/)(exp1
/5.0/)(exp1)()(
0
0
TT
LLTL
zzerf
zzerfIzI
00 ],/)exp[()(fL zzzzAz L
2
2
2
)(exp
2)(
0
zzB
zg
Convolution of a double exponential with a Gaussian
2///)( ,2///)( 00 21 TL zzzzwhere M.G.Dowsett et al. JVST B12, 86(1994)
00 ],/)(exp[)(fT zzzzAz T
Exponential rising edge
Exponential trailing edge
Gaussian-like rounded top
135 140 145 150 155 160
T : 1.27 nm
L : 0.31 nm
: 0.81 nm
Sec
on
dar
y Io
n C
ou
nt
Sputter Depth (nm)
B-doped Si delta layer
leading edgedecay length
trailing edgedecay length
Gaussianbroadening
◈ Depth Resolution
깊이분포도 분석 - 깊이분해능 평가깊이분포도 분석 - 깊이분해능 평가Analysis Method 4
Division of Industrial Metrology 74
0 10 20 30 40 50 60 70100
101
102
103
104
105
106
SIM
S In
ten
sity
(cp
s)
Sputter Depth (nm)10 20 30 40 50 60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
FWHM
T
L
Sputter Depth (nm)
B-doped Si 델타 다층 박막 (500 eV O2+)
깊이분포도 분석 - 깊이분해능 평가깊이분포도 분석 - 깊이분해능 평가Analysis Method 4
38
Division of Industrial Metrology 75
SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석
- 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
Division of Industrial Metrology
Definition of Interface in SIMS Depth Profiling
alloy reference film not practical
Interface
0 50 100 150 200 250 300 350 400 4500
20
40
60
80
100
Ato
mic
Fra
ctio
n (
at%
)
Sputter Depth (nm)
A
B
50 at%
General definition 50 at% definition
Analysis Method 5
76
39
Division of Industrial Metrology
Medium Intensity Ratio Definition
Raw Depth Profile
0 100 200 300 4000.0
0.2
0.4
0.6
0.8
1.0
1.2 iSnormi
F
norm
Sputter Depth (nm)
No
rmal
ize
d S
IMS
Inte
nsi
ty
0 100 200 300 4000
25
50
75
100r
Sr
F
Sputter Depth (nm)
Inte
nsi
ty R
atio
(%
)
0 100 200 300 400 500 600 70010
0
101
102
103
104
105
IS
plateauIF
plateau
iS
rawiF
raw
Sputter Time (s)
SIM
S In
ten
sit
y (c
ps
)
interface
Normalized Depth Profile Intensity Ratio Depth Profile
plateauF
rawF
normF Iii /
plateauS
rawS
normS Iii /
(%)100)/( normS
normF
normFF iiir
(%)100)/( normS
normF
normSS iiir
Medium Intensity
Ratio
no need of a reference film - internal reference
Analysis Method 5
77
Division of Industrial Metrology
0 200 400 600100
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
SIM
S In
ten
sity
(cp
s)
0 200 400 60010
0
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
0 200 400 60010
0
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
0 200 400 60010
0
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
0 200 400 60010
0
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs
2
58NiCs2
Sputter Depth (nm)
Inte
nsi
ty R
atio
(%
)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs2
58NiCs2
Sputter Depth (nm)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs2
58NiCs2
Sputter Depth (nm)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs2
58NiCs2
Sputter Depth (nm)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs2
58NiCs2
Sputter Depth (nm)
5.0 nm 182.7 nm
31.5 nm 208.6 nm
66.0 nm246.9 nm
102.3 nm290.2 nm
176.8 nm367.8 nm
0 200 400 60010
0
101
102
103
104
105
28SiCs2
58NiCs2
Sputter Time (s)
0 100 200 300 400 5000
20
40
60
80
100
28SiCs2
58NiCs2
Sputter Depth (nm)
241.1 nm429.4 nm
58NiCs2+
28SiCs2+ 28SiCs2
+
58NiCs2+ 58NiCs2
+
28SiCs2+ 28SiCs2
+
58NiCs2+ 58NiCs2
+
28SiCs2+ 28SiCs2
+
58NiCs2+
58NiCs2+
28SiCs2+ 28SiCs2
+
58NiCs2+ 58NiCs2
+
28SiCs2+ 28SiCs2
+
58NiCs2+ 58NiCs2
+
28SiCs2+ 28SiCs2
+
58NiCs2+
Crater formation by SIMS + Depth measurement by Stylus : ISO/TR-15969
Thickness Measurement of Films by SIMS
0 250 500 750 1000
-600
-400
-200
0
200
CB
A
Crater Size (m)
Cra
ter
Dep
th (
nm
)
0 50 100 150 200 250 300150
200
250
300
350
400
450
m : 1.057 c : 177.9
Dtotal
= mDsubst
+ C
To
tal
Cra
ter
Dep
th,
Dto
tal (
nm
)
Depth of Substrate, Dsubst (nm)
Crater A B C D E F
1 182.0 208.4 246.1 289.3 366.9 431.7
2 182.0 208.5 247.9 292.1 370.1 428.1
3 182.5 209.7 245.8 290.1 365.3 429.2
4 182.7 208.4 247.2 287.3 368.9 428.2
5 184.6 208.2 247.5 292.2 367.7 429.7
Average 182.7 208.6 246.9 290.2 367.8 429.4
RSD 0.906 0.936 0.410 0.664 0.761 0.787
CraterFe0.5Ni0.5
Total Subst.
A 182.7 5.0
B 208.6 31.5
C 246.9 66.0
D 290.2 102.3
E 367.8 176.8
F 429.4 241.1
m 1.057
c 177.9
A B C D E F
ABCDEF
Crater Depth Measurement Linear Fitting
Analysis Method 5
78
40
Division of Industrial Metrology
Single Metal Films on Si
0 20 40 60 8040
60
80
100
120
m : 0.804 c : 47.8
Dtotal= mDsubst+ C
To
tal C
rate
r D
epth
, Dto
tal (
nm
)
Depth of Substrate, Dsubst
(nm)0 50 100 150 200 250
150
200
250
300
350
400
m : 1.045 c : 194.2
Dtotal
= mDsubst
+ C
Depth of Substrate, Dsubst
(nm)0 20 40 60 80 100
80
100
120
140
160
180
m : 0.679 c : 99.4
Dtotal
= mDsubst
+ C
Depth of Substrate, Dsubst
(nm)
0 100 200 300 400 50010
1
102
103
104
105
28SiCs
2
+
74GeCs2
+
Sputter Time (s)
SIM
S In
ten
sity
(cp
s)
0 100 200 300 400 500 600 700101
102
103
104
105
28SiCs
2
+
58NiCs
2
+
Sputter Time (s)
0 100 200 300 400 500101
102
103
104
105
28SiCs2
+
74GeCs
2
+
Sputter Time (s)
Ge (50 nm) Ge (100 nm) Ni (200 nm)
Analysis Method 5
79
Division of Industrial Metrology
Multilayer Films on Si
0 300 600 900 1200100
101
102
103
104
105
106
28SiCs2
+74GeCs2
+
Sputter Time (s)
SIM
S In
ten
sity
(c
ps)
0 100 200 300 400 500 600 7000
25
50
75
100
Inte
nsi
ty R
atio
(%
)
28SiCs2
+
74GeCs
2
+
Sputter Depth (nm)
0 200 400 600 800100
101
102
103
104
105
106
28SiCs2
+
181TaCs
+
Sputter Time (s)
SIM
S In
ten
sity
(c
ps)
0 100 200 300 4000
25
50
75
100
Inte
nsi
ty R
atio
(%
)
28SiCs2
+
181TaCs
+
Sputter Depth (nm)
interface interface
0 200 400 600 800100
101
102
103
104
105
106
28SiCs2
+58NiCs2
+
Sputter Time (s)
SIM
S In
ten
sity
(c
ps)
0 100 200 300 4000
25
50
75
100
Inte
nsi
ty R
atio
(%
)
28SiCs2
+
58NiCs
2
+
Sputter Depth (nm)
interface
5 x (Ta2O5/Ta) / Si 5 x (Si/Ge) / Si 5 x (Cr/Ni) / Si
Analysis Method 5
80
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Division of Industrial Metrology
Comparison of Film Thickness by SIMS and TEM
TTEM vs TSIMS TTEM vs TSIMS+∆I/2
SpecimenThickness (nm)
TTEM TSIMS ∆I/2 TSIMS+∆I/2Ge (50 nm)/Si 50.7 47.8 5.9 53.7
Ge (100 nm)/Si 101.4 99.4 5.9 105.3Ni (200 nm) /Si 210.7 197.8 8.2 206.1
Cr/Ni ML 257.9 244.9 8.0 252.9Ta/Ta2O5 ML 252 249.6 1.6 251.2
Si/Ge ML 397.1 392.2 5.4 397.6m - 0.988 - 0.985c - -3.829 - 2.947
0 100 200 300 4000
100
200
300
400
m : 0.988 c : - 3.829
TSIMS
= mTTEM
+ c
Th
ickn
ess
by
SIM
S, T
SIM
S (
nm
)
Thickness by TEM, TTEM
(nm)0 100 200 300 400
0
100
200
300
400
m : 0.985 c : 2.497
TSIMS+DI/2 = mTTEM+ c
Th
ickn
ess
by
SIM
S, T
SIM
S+
DI/2
(n
m)
Thickness by TEM, TTEM
(nm)
Analysis Method 5
81
Division of Industrial Metrology
Comparison of Film Thickness by SIMS and TEM
Ni/Si Cr/Ni M) Ta/Ta2O5 ML
82
42
Division of Industrial Metrology 83
SIMS 개요- SIMS의 개요 및 범위
- SIMS의 역사
- SIMS의 산업 응용
SIMS 기본 원리- SIMS 장비 구성
- 이온화율 및 상대감도인자
- 이온빔 스퍼터링 효과
SIMS를 이용한 다양한 분석법- 원소분석
- 미량성분 정량분석 - 주성분 정량분석
- 깊이분포도 분석
- 박막두께측정
- 공간분포도 분석
내 용
Division of Industrial Metrology 84
Secondary Ion Microprobe
Image display
Rasterscanplates
Detector
Massspectrometer
Secondary ioncollection optics
Sample
Electronicgating signal
Synchronizedscan generator
Ion gun
Focusing lens
Image display
Detector
Massspectrometer
Secondary ioncollection optics
Sample
Ion gun
Focusing lens
Optical gatingaperture
Secondary Ion Microscope
SIMS 공간분포도 분석법SIMS 공간분포도 분석법Analysis Method 6
43
Division of Industrial Metrology 85
3 µm 3 µm
1.5 µm 1.5 µm
Silicon dopant mapping in YAG(Ytrium Aluminium Garnet) sample.
Field: 20 µm x 20 µm (low magnification
Silicon dopant mapping of two YAGsamples: different segregation patternsafter thermal treatment.
Field: 10 µm x 10 µm (high magnification)
Maximum Silicon concentration at grain boundary: 0.1 at. % (<=> 50 counts).
■ Trace element imaging at 0.1µm lateral resolution, on bulk insulating sample.
Dopant imaging in ceramics: YAG samples
SIMS 공간분포도 분석법SIMS 공간분포도 분석법Analysis Method 6
순서 사용 표준시료 년도 내 용 참여기관
1 Ta/Ta2O5 다층 박막 1994년 SIMS, AES 스퍼터링율 LG종기원 등 8기관 분석능력 향상
2 Ta/Ta2O5 다층 박막 1995년 SIMS, AES 깊이분포도 LG종기원 등 8기관 ISO-14606
3 SiO2/Ta2O5 다층 박막 1996년 SIMS 깊이분포도 삼성반도체 등 7기관 분석능력 향상
4 Pt-Co 합금 박막 1996년 XPS, AES 정량 삼성종기원 등 7기관 분석능력 향상
5 Delta 다층 박막 1998년 SIMS 깊이분포도 현대반도체 등 8기관 분석능력 향상
6 Delta 다층 막막 1999년 SIMS 깊이분포도 현대반도체 등 8기관 분석능력 향상
7 B-doped Si 박막 2001년 SIMS 정량 (B) 하이닉스반도체 등 6기관 논문 JKVS
8 GaAs doped Si 다층 2001년 SIMS 깊이분포도 중국 등 3개국 ISO-20341
9 B-doped Si 박막 2002년 SIMS 정량 (B) 중국 등 3개국 분석능력 향상
10 B-doped Si 다층박막 2003년 SIMS 깊이분해능 하이닉스반도체 등10기관 ISO-20341
11 Si/Ge-delta 다층박막 2005년 SIMS 분석깊이 보정 삼성전자 등 12기관 논문 MST
12 Fe-Ni 합금 박막 2008년 XPS, AES 정량 분석 독일 등 5개국 CCQM KC
표준화연구역량표준화연구역량연구역량
◈ 국내외공동분석수행역량
감사합니다.