Download - APD, CSP and T-card Characteristics
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APD, CSP and T-card Characteristics
Toru Sugitate / Hiroshima University
for PHOS FEE Review / PRR Meeting in Wuhan, China
on May 30/31, 2005
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PHOS electronics embedded
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PHOS signal processing scheme
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PbW04 crystal
lead-tungstate crystal (PWO)
Fluorescence decay-time of around 25ns at the operation point; i.e. -25deg.
Inorganic scintillating crystal of 22x22x180 mm3, corresponding to 20X0.
Emission spectrum has blue(420nm) and green(500nm) components.
Light yield of 7-12 pe/MeV for crystals produced in Apatity.
Larger LY as cooling down, but increase slower components.
High QE in blue, low noise and capacitance, and thin photo-sensor, operational at low temperature and in magnetic field is required.
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Silicon avalanche photo diode (APD)
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Smaller sensitive area, but 3-4 times higher QE than PMT.
Abrupt breakdown at a certain reverse voltage.
NB; data are given at 25 deg.
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Gain depends on temp and reverse voltage, and
higher performance as cooling down.
Both the precise temperature and reverse voltage controls are required.
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Reality of APD’s(for samples ~ 1800)
Inverse current at M=50
1
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
Inverse current at M=50
num
ber
of
APD
Inverse current (nA) at op. voltage
0 10 20 30 40 50 0
100
200
300
400
500
15 20 25 30
15 20 25 30
num
ber
of
APD
Vop.= 350 - 440VVbreak – Vop.= 20 - 25VIdark peaks at 5nA, and
mostly below 15nA.
Inverse current (nA)voltage difference (V)
Vbreak – Vop.
0
50
100
150
200
250
300 350 400 450 500Bias Voltage (V)
num
bers
break down voltagebias voltage at M=50
num
ber
of
APD
Breakdown voltage and Op. voltage at M=50
300 350 400 450 500inverse voltage (V)
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J-FET
Sensitivity
Rise time
Noise (ENC)
Output polarity
Feedback loop Power
dissipation
2SK932 (IDSS rank =23) by SANYO
0.833V/pC
15-20 ns over full range
200 e + 3.2 e /pF x Cin(pF)
Positive
100M // 1pF
64mW (4.2mA @12V & 2.2mA @-6V)
APD: Hamamatsu S8148/S8664-55
APD preamplifier: Originally designed and built at CCNU & Bergen.
Re-designed in 2002 at Hiroshima using components available in Japan.
Hiroshima ver.2 is successfully performed in PHOS256 in 2003/04.
Minor modification for ver.3 in 2004.5,000 of Hiroshima ver.3 has been
produced for the first module.
C5 only for test
100M // 1pF
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T-card: 8 CSP outputs into single base connector. Originally built at Bergen in 2003.Re-deigned at Hiroshima in 2005 to;
fit with the new frame design at Sarov, remove a test pulse generator, andremove serial registers R11 to R16 in p
ower lines, since they are on CSP. 10 samples of the new version for testing. Connectors onboard;
MOLEX 53047-0610 AMP 747470-2
Sarov design
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