BUK7675-55AN-channel TrenchMOS standard level FET25 August 2014 Product data sheet
1. General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plasticpackage using TrenchMOS technology. This product has been designed and qualified tothe appropriate AEC standard for use in automotive critical applications.
2. Features and benefits• AEC Q101 compliant• Low conduction losses due to low on-state resistance• Suitable for standard level gate drive sources• Suitable for thermally demanding environments due to 175 °C rating
3. Applications• 12 V and 24 V loads• Automotive and general purpose power switching• Motors, lamps and solenoids
4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V
ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 2; Fig. 3 - - 20.3 A
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - - 62 W
Static characteristics
VGS = 10 V; ID = 10 A; Tj = 175 °C;Fig. 11; Fig. 12
- - 150 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;Fig. 11; Fig. 12
- 64 75 mΩ
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalancheenergy
ID = 11 A; Vsup ≤ 55 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped
- - 30.3 mJ
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 2 / 12
5. Pinning informationTable 2. Pinning informationPin Symbol Description Simplified outline Graphic symbol
1 G gate
2 D drain
3 S source
mb D mounting base; connected todrain
mb
1 3
2
D2PAK (SOT404)
S
D
G
mbb076
6. Ordering informationTable 3. Ordering information
PackageType number
Name Description Version
BUK7675-55A D2PAK plastic single-ended surface-mounted package (D2PAK); 3 leads(one lead cropped)
SOT404
7. MarkingTable 4. Marking codesType number Marking code
BUK7675-55A BUK7675-55A
8. Limiting valuesTable 5. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V
VDGR drain-gate voltage RGS = 20 kΩ - 55 V
VGS gate-source voltage -20 20 V
Ptot total power dissipation Tmb = 25 °C; Fig. 1 - 62 W
Tmb = 25 °C; VGS = 10 V; Fig. 2; Fig. 3 - 20.3 AID drain current
Tmb = 100 °C; VGS = 10 V; Fig. 2 - 14.3 A
IDM peak drain current Tmb = 25 °C; pulsed; tp ≤ 10 µs; Fig. 3 - 81 A
Tstg storage temperature -55 175 °C
Tj junction temperature -55 175 °C
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 3 / 12
Symbol Parameter Conditions Min Max Unit
Source-drain diode
IS source current Tmb = 25 °C - 20.3 A
ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 81 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-sourceavalanche energy
ID = 11 A; Vsup ≤ 55 V; RGS = 50 Ω;VGS = 10 V; Tj(init) = 25 °C; unclamped
- 30.3 mJ
Tmb (°C)0 20015050 100
03na19
40
80
120
Pder(%)
0
Fig. 1. Normalized total power dissipation as afunction of mounting base temperature
Tmb (°C)0 20015050 100
03aa24
40
80
120
Ider(%)
0
Fig. 2. Normalized continuous drain current as afunction of mounting base temperature
03nc12
10
1
102
103
ID(A)
10- 1
VDS (V)1 10210
RDSon = VDS / ID
D.C.
tp = 10 µs
100 µs
1 ms
10 ms100 ms
tp
tp
T
P
t
Tδ =
Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 4 / 12
9. Thermal characteristicsTable 6. Thermal characteristicsSymbol Parameter Conditions Min Typ Max Unit
Rth(j-mb) thermal resistancefrom junction tomounting base
Fig. 4 - - 2.4 K/W
Rth(j-a) thermal resistancefrom junction toambient
mounted on printed-circuit board;minimum footprint
- 50 - K/W
03nc13
tp (s)10- 6 10- 1 110- 210- 310- 5 10- 4
1
10- 1
10
Zth(j-mb)(K/W)
10- 2
tp
tp
T
P
t
Tδ =
single shot
0.2
δ = 0.5
0.02
0.050.1
Fig. 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. CharacteristicsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit
Static characteristics
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C 55 - - VV(BR)DSS drain-sourcebreakdown voltage ID = 0.25 mA; VGS = 0 V; Tj = -55 °C 50 - - V
ID = 1 mA; VDS = VGS; Tj = 175 °C;Fig. 10
1 - - V
ID = 1 mA; VDS = VGS; Tj = 25 °C;Fig. 10
2 3 4 V
VGS(th) gate-source thresholdvoltage
ID = 1 mA; VDS = VGS; Tj = -55 °C;Fig. 10
- - 4.4 V
VDS = 55 V; VGS = 0 V; Tj = 175 °C - - 500 µAIDSS drain leakage current
VDS = 55 V; VGS = 0 V; Tj = 25 °C - 0.05 10 µA
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 5 / 12
Symbol Parameter Conditions Min Typ Max Unit
VGS = 20 V; VDS = 0 V; Tj = 25 °C - 2 100 nAIGSS gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C - 2 100 nA
VGS = 10 V; ID = 10 A; Tj = 175 °C;Fig. 11; Fig. 12
- - 150 mΩRDSon drain-source on-stateresistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;Fig. 11; Fig. 12
- 64 75 mΩ
Dynamic characteristics
Ciss input capacitance - 320 483 pF
Coss output capacitance - 92 113 pF
Crss reverse transfercapacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz;Tj = 25 °C; Fig. 13
- 64 90 pF
td(on) turn-on delay time - 10 - ns
tr rise time - 50 - ns
td(off) turn-off delay time - 70 - ns
tf fall time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;RG(ext) = 10 Ω; Tj = 25 °C
- 40 - ns
from upper edge of drain mountingbase to centre of die; Tj = 25 °C
- 2.5 - nHLD internal draininductance
from drain lead 6 mm from package tocentre of die; Tj = 25 °C
- 4.5 - nH
LS internal sourceinductance
from source lead to source bond pad;Tj = 25 °C
- 7.5 - nH
Source-drain diode
VSD source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 14 - 0.85 1.2 V
trr reverse recovery time - 32 - ns
Qr recovered charge
IS = 20 A; dIS/dt = -100 A/µs;VGS = -10 V; VDS = 30 V; Tj = 25 °C - 120 - nC
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 6 / 12
03nc09
0
10
20
30
40
50
60
0 2 4 6 8 10VDS (V)
ID(A)
4.5
5.5
6.5
7.5
8.5
2014
9.5
12
10.5
VGS (V) = 16
Fig. 5. Output characteristics; drain current as afunction of drain-source voltage; typical values
03nc08
40
60
80
100
120
140
160
5 10 15 20VGS (V)
RDSon(mΩ)
Fig. 6. Drain-source on-state risistance as a functionof gate-source voltage; typical values
03aa35
VGS (V)0 642
10- 4
10- 5
10- 2
10- 3
10- 1
ID(A)
10- 6
min typ max
Fig. 7. Sub-threshold drain current as a function ofgate-source voltage
03nc07
0
5
10
15
20
25
0 2 4 6 8 10VGS (V)
ID(A)
Tj = 175 °C
Tj = 25 °C
Fig. 8. Transfer characteristics: drain current as afunction of gate-source voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 7 / 12
03nc05
0
2
4
6
8
10
0 5 10 15QG (nC)
VGS(V) VDD = 44 V
VDD = 14 V
Fig. 9. Gate-source voltage as a function of gatecharge; typical values
Tj (°C)- 60 1801200 60
03aa32
2
3
1
4
5VGS(th)
(V)
0
max
typ
min
Fig. 10. Gate-source threshold voltage as a function ofjunction temperature
03nc10
40
60
80
100
120
140
160
180
0 10 20 30 40 50ID (A)
RDSon(mΩ) 5.5 6 6.5 8 VGS (V) = 107
Fig. 11. Drain-source on-state resistance as a functionof drain current; typical values
Tj (°C)- 60 1801200 60
03aa28
1.2
0.6
1.8
2.4
a
0
Fig. 12. Normalized drain-source on-state resistancefactor as a function of junction temperature
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 8 / 12
03nc11
0
100
200
300
400
500
600
10- 2 10- 1 1 10 102VDS (V)
C(pF)
Ciss
Coss
Crss
Fig. 13. Input, output and reverse capicitances as afunction of drain-source voltage; typical values
03nc04
0
20
40
60
80
100
120
0 0.5 1.0 1.5 2.0VSD (V)
IS(A)
Tj = 175 °C
Tj = 25 °C
Fig. 14. Reverse diode current as a function of reversedioode voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 9 / 12
11. Package outline
ReferencesOutlineversion
Europeanprojection Issue date
IEC JEDEC JEITA
SOT404
sot404_po
06-03-1613-02-25
Unit
mmmaxnommin
4.5
4.1
1.40
1.27
1.45
1.05
0.64
0.46
11 1.6
1.2
A
Dimensions (mm are the original dimensions)
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404
A1 b
0.85
0.60
b2 c D D1 E e HD Lp Q
2.5415.8
14.8
2.6
2.2
10.3
9.7
2.9
2.1
0 5 mm
scale
e e
E
b
D1
HD
D
b2
Q
Lp
c
A1
A
1 3
2
mountingbase
Fig. 15. Package outline D2PAK (SOT404)
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 10 / 12
12. Legal information
12.1 Data sheet statusDocumentstatus [1][2]
Productstatus [3]
Definition
Objective[short] datasheet
Development This document contains data fromthe objective specification for productdevelopment.
Preliminary[short] datasheet
Qualification This document contains data from thepreliminary specification.
Product[short] datasheet
Production This document contains the productspecification.
[1] Please consult the most recently issued document before initiating orcompleting a design.
[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case ofmultiple devices. The latest product status information is available onthe Internet at URL http://www.nexperia.com.
12.2 DefinitionsPreview — The document is a preview version only. The document is stillsubject to formal approval, which may result in modifications or additions.Nexperia does not give any representations or warranties as tothe accuracy or completeness of information included herein and shall haveno liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. Nexperia does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local Nexperiasales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNexperia and its customer, unless Nexperia andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the Nexperia productis deemed to offer functions and qualities beyond those described in theProduct data sheet.
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In no event shall Nexperia be liable for any indirect, incidental,punitive, special or consequential damages (including - without limitation -lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not suchdamages are based on tort (including negligence), warranty, breach ofcontract or any other legal theory.
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Right to make changes — Nexperia reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and withoutnotice. This document supersedes and replaces all information supplied priorto the publication hereof.
Suitability for use in automotive applications — This Nexperiaproduct has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of a Nexperia product can reasonably be expectedto result in personal injury, death or severe property or environmentaldamage. Nexperia and its suppliers accept no liability forinclusion and/or use of Nexperia products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.
Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. Nexperia makes norepresentation or warranty that such applications will be suitable for thespecified use without further testing or modification.
Customers are responsible for the design and operation of theirapplications and products using Nexperia products, and Nexperiaaccepts no liability for any assistance with applications orcustomer product design. It is customer’s sole responsibility to determinewhether the Nexperia product is suitable and fit for thecustomer’s applications and products planned, as well as for the plannedapplication and use of customer’s third party customer(s). Customers shouldprovide appropriate design and operating safeguards to minimize the risksassociated with their applications and products.
Nexperia does not accept any liability related to any default,damage, costs or problem which is based on any weakness or defaultin the customer’s applications or products, or the application or use bycustomer’s third party customer(s). Customer is responsible for doing allnecessary testing for the customer’s applications and products using Nexperiaproducts in order to avoid a default of the applicationsand the products or of the application or use by customer’s third partycustomer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.
Terms and conditions of commercial sale — Nexperiaproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nexperia.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. Nexperia hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of Nexperia products by customer.
© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 11 / 12
No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance or thegrant, conveyance or implication of any license under any copyrights, patentsor other industrial or intellectual property rights.
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© Nexperia B.V. 2017. All rights reserved
Nexperia BUK7675-55AN-channel TrenchMOS standard level FET
BUK7675-55A All information provided in this document is subject to legal disclaimers.
Product data sheet 25 August 2014 12 / 12
13. Contents1 General description ............................................... 12 Features and benefits ............................................13 Applications ........................................................... 14 Quick reference data ............................................. 15 Pinning information ...............................................26 Ordering information .............................................27 Marking ................................................................... 28 Limiting values .......................................................29 Thermal characteristics .........................................410 Characteristics .......................................................411 Package outline ..................................................... 912 Legal information .................................................1012.1 Data sheet status ............................................... 1012.2 Definitions ...........................................................1012.3 Disclaimers .........................................................1012.4 Trademarks ........................................................ 11
© Nexperia B.V. 2017. All rights reservedFor more information, please visit: http://www.nexperia.comFor sales office addresses, please send an email to: [email protected] Date of release: 25 August 2014