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The optimization and annealing process of solidly mounted resonator
(SMR) filters for 4G mobile communication system
MOST 103-2221-E-237 -006 -MY2
103 08 01 105 07 31
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Abstract .............................................................................................. II
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English Abstract
This project entitled The optimization and annealing process of solidly mounted resonator filter for
4G mobile communication system. The purpose of this project is to optimize SMR filters for 4G mobile
communication system. SMR filters should be optimized in accordance with the specifications of LTE
communication system. The key annealing technology of device for 4G communication system will be
developed.
In the first year, the SMR devices with high performance are accomplished. The physical properties of
piezoelectric layer and Bragg reflector are optimized by rapid thermal annealing (RTA) and conventional
thermal annealing (CTA), respectively. The ideal properties of SMR devices for 4G applications are uniform
surface morphology, little acoustic loss, well adhesion, little parasitic effect and strongly c-axis orientated.
Therefore, this project investigates various commercial considerations to optimize the high-performance
SMR devices, including process time, procedures, cost, and efficiency. In the second year, in order to reduce
the insertion loss, ripples, and expand bandwidth, laser annealing processes and laser trimming processes
will be used to make the better electrical contact for 4G mobile communication system.
KeywordSolidly mounted resonatorsFiltersAnnealingLaser trimming
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3
RF MEMS
(GPS) PDA
(WLAN)
2012 MEMS
22 2018 MEMS 60 MEMS
TriQuint Semiconductor 2010 MEMS
iSuppli TriQuint Semiconductor MEMS
MEMS TriQuint (RF amplifiers)
(surface acoustic waveSAW)(bulk acoustic waveBAW)
(4G)
(4G)
4G 3 GHz
RF Filter
(
)
4G SMR
4G SMR (rapid thermal annealing, RTA)
(conventional thermal annealing, CTA)
c
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4
4G SMR WiMAX/LTE
4G SMR (RTA)(CTA)
1.
2.
3.
RTA CTA
SMR
CTA RTA 400C 500C SiO2
350C Mo 350C
350C 3-1
3-1 CTA RTA
CTA RTA
(C/sec) 0.1 5
(C) 400, 500 400, 500
(min) 10 10
Air Vacuum, Air, N2
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5
SMR AlN AlN
AlN C AlN
AlN RTA AlN
AlN
AlN AlN AlN
RTA N2 400C 500C AlN
300C 300C
AlN AlN 3-2
3-2 AlN RTA
RTA
(C/sec) 5
(C) 400, 500
(min) 10
Vacuum, N2
(Atomic Force Microscopy, AFM)
AlN X (X-ray diffraction, XRD)
EDAX
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6
AlN AlN
AlN C
(1064 nm)(532 nm)(355 nm)
3-3
3-3
(nm) 1064 532 355
(m) 41 50 16
(kHz) 100 30 40
(W) 0.1~0.75 0.05~0.5 0.01~0.1
AlN X (X-ray diffraction, XRD) AlN
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7
Mo ( 0.5
) 1 2 3 4
4-1
Mo Si SiO2 Mo
SMR
4-1
CTA
400C 500C
0.1 C/sec 10 min 4-2 4-3
CTA 400C 500C 4
0.5
0.5 EDAX 4-4 4-5
4-1 4-2 CTA 400C 500C
4-2 CTA 400C
4-3 CTA500C
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8
4-4 0.5 CTA 400C EDAX
4-5 0.5 CTA 500C EDAX
4-1 0.5CTA 400CEDAX
Element Weight % Atomic %
O K 17.27 55.59
Mo L 82.73 44.41
Totals 100.00 100.00
4-2 0.5CTA 500CEDAX
Element Weight % Atomic %
O K 30.42 72.39
Mo L 69.58 27.61
Totals 100.00 100.00
RTA
RTA
()
4
4-6 4-7 400C 500C
0.5 400C 500C
4-8 4-9 EDAX
4-3 4-4
4-6 RTA 400C
4-7 RTA 500C
4-8 0.5 RTA 400C 4-9 0.5 RTA 500C
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9
EDAX EDAX
4-3 0.5 RTA 400C
EDAX Element Weight % Atomic %
O K 17.06 55.23
Mo L 82.94 44.77
Totals 100.00 100.00
4-4 0.5 RTA 500C
EDAX Element Weight % Atomic %
O K 29.11 71.12
Mo L 70.89 28.88
Totals 100.00 100.00
400C 500C AFM
4-10 4-11
4-10 RTA400C
4-11 RTA 500C
400C 500C AFM
4-12 4-13 0.5~2
3
4-12 RTA 400C
4-13 RTA 500C
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10
0.5~2
3~4
RTA
RTA AlN
4-14 AlN 400C
AlN 500C AlN
AlN 400C 500C AlN
AlN
4-14 XRD 4-14 XRD
CTA RTA
AlN AlN
4-15
AlN (002)
4-16 4-16 0.25 W AlN
0.25 W AlN
0.75 W AlN
AlN
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11
0.25 W AlN
(a) 0.1 W (b) 0.25 W
(c) 0.5 W (d) 0.75 W
4-15 XRD
4-16 AlN AlN (002)
AlN AlN
AlN 4-17
AlN (002)
4-18 4-18 0.15 W AlN
0.15 W AlN
AlN 0.15 W
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12
(a) 0.05 W (b) 0.15 W
(c) 0.25 W (d) 0.5 W
4-17 XRD
4-18 AlN AlN (002)
AlN AlN
AlN
4-19 AlN (002)
4-20 4-20 0.025 W
AlN 0.05 W AlN
0.025 W 0.05W
AlN 0.025
W
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13
(a) 0.01 W (b) 0.025 W
(c) 0.05 W (d) 0.075 W
4-19 XRD
4-20 AlN AlN (002)
4-21
112 nm SMR 1.3 W 1.4 W
4-22
1.3 W 1.4 W
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14
4-21 Pt/Ti Si
(a) 1.3W
(b) 1.4W
4-22 Pt/Ti
CTA RTA
(AlN ) RTA
AlN AlN
0.25 W AlN AlN
0.15 W AlN AlN
0.025 W AlN AlN AlN
AlN
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15
[1]. Susan Hong Yole2018 MEMS 60 EET
/MEMS2013 08 01
[2]. Judith Cheng MEMS Top10 TriQuint EET
/MEMS2011 02 14
[3]. K. W. Tay, Performance Characterization of thin AlN films deposited on Mo Electrode for Thin-Film
Bulk Acoustic-Wave Resonators, Jpn. J. Appl. Phys., vol.43, No.8A, pp.5510-5515, 2004.
[4]. R. C. Ruby, P. Bradley, Y. Oshmyansky, Thin film bulk acoustic resonators for wireless applications,
IEEE Ultrason. Symp, pp.813-821, 2001.
[5]. D. H. Kim, M. Yim, D. Chai, G. Yoon, Improvements of resonance characteristics due to thermal
annealing of Bragg reflectors in ZnO-based FBAR devices, Electronics Letters, vol.39, No.13,
pp.962-964, June 2003.
[6]. J. Larson, Power Handling and Temperature Coefficient Studies in FBAR Duplexers for the 1900 MHz
PCS Band, IEEE Ultrasonics Symposium, pp.869-874, 2000.
[7]. M. Hara, J. Kuypers, M. Esashi, Surface micromachined AlN thinfilm 2 GHz resonator for CMOS
integration, Sensors and Actuators, A117, pp.211-216, 2005.
[8]. R. Aigner, J. Ella, H. -J. Timme, L. Elbrecht, W. Nessler, S.Marksteiner, Advancement of MEMS into
RF-Filter Applications, IEEE IEDM, pp.897-900, 2000.
[9]. R. B. Stokes and J. D. Crawfold. X-Band Thin-Film Acoustic Filter on GaAs, IEEE Tans. Microwave
Theory Tech., vol.41, pp.1075-1080, July 1993.
[10]. V. Krishnaswamy, J. F. Rosenbaum, S. S. Horwitz, and R. A. Moore Film Bulk Acoustic Wave
Resonator and Filter Technology, IEEE Trans. MTT-S Dig., pp.153-155, 1992.
[11]. M. Schmid, E. Benes, W. Burger, and V. Kravchenko, Motional capacitance of layered piezoelectric
thickness-mode resonators, IEEE Trans. Ultrason., Ferroelect., Freq. Contr., vol.38, pp.199-206, 1991.
[12]. K. M. Lakin and J. S. Wang, Acoustic bulk wave composite resonators, Appl. Phys. Lett., vol.38,
pp.125, 1981.
[13]. K. M. Lakin, Thin film resonators and filters, IEEE Ultrasonics Sympium Proc., vol.2, pp.895-906,
1999.
[14]. J. B. Lee, J. P. Jung, M. H. Lee and J. S. Park, Effects of bottom electrodes on the orientation of AlN
films and the frequency responses of resonators in AlN-based FBARs, Thin Solid Films, vol.447-448,
pp.610-614, 2004.
[15].
(2008)
[16].
(2008)
-
16
[17]. R.C. Lin, Y.C. Chen, W.T. Chang, C.C. Cheng, and K.S. Kao, 2008, Highly sensitive mass sensor using
film bulk acoustic resonator, Sensors and Actuators A: Physical, 147, pp. 425429.
-
1.
100
2.
100
-
3.
500
CTA RTA
AlN
RTA AlN AlN
0.25 W
0.15 W 0.025 W AlN AlN
AlN
AlN
ICIAE2015ICASI 2015IEDMS2015 104
[1] W. C. Shih, Y. C. Chen, W. T. Chang, C. C. Cheng*, K. S. Kao, K. H. Cheng, C. M. Wang, C. Y. Wen,
J. Y. Chang and P. W. Ting, The Bragg Reflector Layer of Low Surface Roughness Based on Solidly
Mounted Resonators, in Proc the 3rd
International Conference on Industrial Application Engineering
2015 (ICIAE 2015), PS-16, Kitakyushu, Japan, Mar. 28-31, 2015.
[2] W. C. Shih, Y. C. Chen, W. T. Chang, C. Y. Wen, K. S. Kao, C. C. Cheng*, P. W. Ting and J. Y. Chang,
Dual mode frequency response using solidly mounted resonators, in Proc 2015 International
Conference on Applied System Innovation (ICASI 2015), ICASI-1044, Osaka, Japan, May 22-26, 2015.
[3] W. C. Shih, Y. C. Chen, P. W. Ting, K. S. Kao, C. C. Cheng* and W. T. Chang, Development of
dual-mode SMR using off-axis deposition AlN thin films, in Proc International Electron Devices and
Materials Symposium 2015 (IEDMS 2015), P267, Tainan, Taiwan, Nov. 19-20, 2015.
[4]
104 204Nov.
20~212015
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104 4 08
2015 (The 3rd International Conference on Industrial Application
Engineering 2015, ICIAE2015) 104 3 28 3 31
(Kitakyushu International Conference Center, Kitakyushu, Japan)
(Institute of Industrial Applications Engineers, IIAE) 9
(Topics) Electrical technologyElectronic technology, Mechanical technologyControl
technologySensing technologyInformation technology Network technologyImage processing
Others 90 (oral
presentations) 3 keynote speech
27 28
MOST 1032221E237006MY2
-
104 3 28
104 3 31
() 2015
() The 3rd International Conference on Industrial Application
Engineering 2015 (ICIAE2015)
()
() The Bragg Reflector Layer of Low Surface Roughness Based on
Solidly Mounted Resonators
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()
(The Bragg Reflector Layer of Low Surface Roughness Based on Solidly Mounted
Resonators)(DC)(RF) Si SiO2/Mo
(DC) Ti Pt
(RF)(AlN) X (XRD)
(SEM)(AFM)
(HP8720)(SMR) return loss
()
SMR
1. ()
2. (Program)
3.
-
ICIAE 2015
-
105 7 11
Control, IS3C2016) 105 7 4 7 6
(Tanglong International Hotel, Xian, China) (National Chin-Yi
University of Technology)IEEE Computer Society IEEE Industrial Electronics Society
(Xi'an University of Science and Technology)IS3C
110 (oral
presentations) 5 keynote speeches
IEEE Xplore EI
SCI
SensorsMaterials
MOST 1032221E237006MY2
--
( 2 )
105 7 4 105 7 6
()2016
() The Third International Symposium on Computer, Consumer and Control
(IS3C2016)
()
() Fabrication of SAW devices with dual mode frequency response using AlN and
ZnO thin films
-
Fabrication of SAW devices with
dual mode frequency response using AlN and ZnO thin films (
)(RF) Si3N4/Si
(AlN)(ZnO)(acoustic wave velocity)
(electromechanical coupling coefficient)
(Surface Acoustic Wave, SAW) (Interdigital transducer electrodes, IDTs)
(DC)(Photolithography)(Al)
IDT/ZnO/AlN/Si3N4/Si SAW 146.3
MHz(Rayleigh mode) 265.7 MHz(Sezawa mode)(Insertion loss, IL)-14.2 dB
(Rayleigh mode)-17.4 dB (Sezawa mode)
-
SAW
1. ()
2. (Program)
3.
4.