![Page 1: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/1.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
RF-MEMS activities in Micronova
Mika Koskenvuori
[email protected] Research Institute
Research Highlights Seminar3.12.2004 Micronova – Helsinki University of Technology
![Page 2: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/2.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
What is MEMS?
MEMS = MicroElectroMechanicalSystem
Use fabrication methods learned from the IC-processing to fabricate (3D)mechanical structures
![Page 3: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/3.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Outline
• Introduction and motivation• MEMS-based reference oscillator• Stability-issues• IC-electronics• Conclusions
![Page 4: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/4.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Outline
• Introduction and motivation• MEMS-based reference oscillator• Stability-issues• IC-electronics• Conclusions
![Page 5: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/5.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Introduction
Motivation – Why MEMS?
Small size
Photo: Jyrki Kiihamäki
![Page 6: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/6.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Introduction
Motivation – Why MEMS?
Good performance•Low losses•Low power consumption•High stability
-10
-5
0
5
10
15
14758500 14758750 14759000 14759250 14759500 14759750 14760000Frequency [Hz]
S 21 [
dB
]
-140
-120
-100
-80
-60
-40
-20
0
20
Ph
ase
[Deg
85 Hz
3 dBQ=180 000
![Page 7: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/7.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Introduction
Motivation – Why MEMS?
Utilizes “standard” IC-manufacturing processes:•Mass production•Low price•Possibility to integrate
![Page 8: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/8.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Introduction
Motivation
Source: http://www.inside-gsm.com
![Page 9: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/9.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
• Motivation• MEMS-based reference oscillator• Stability-issues• IC-electronics• Conclusions
![Page 10: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/10.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
Scaling
sizefr
1∝ fr ~ 1 GHzfr ~ 1 kHz fr ~ 100 kHz fr ~ 10 MHz
L~
10 c
m L~
1 m
m
L~
10 µ
m
L~
100
nm
MEMS NEMS
now future
• Typically coupling gets weaker as size is reduced• Dissipations are increased by reducing the size
![Page 11: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/11.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
Specifications
• High stability• Aging < 1ppm/year
• Low noise• Phase noise
• -130 dBc/Hz@1kHz• Noise to carrier
• -150 dBc/Hz-150dBc/Hz-130dBc/Hz
1kHz
1/fm3
1/fm1
L(fm)
fm0
1/fm0
SSB Phase Noise Spectrum
![Page 12: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/12.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Outline
• Motivation• MEMS-based reference oscillator• Stability-issues• IC-electronics• Conclusions
![Page 13: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/13.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Long-term stability - Encapsulation process
Encapsulated sample
![Page 14: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/14.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Long-term stability - Results Long-term stability - Results
Stability of resonance frequency:Vacuum encapsulated vs. open samples ( > 1 month)
0 200 400 600 800 1000-80
-70
-60
-50
-40
-30
-20
-10
0
10
0 200 400 600 800 10000
5
10
15
20
25
30
35
40
Time [h]
df/f
[ppm
] RH
[%]
Sample 1
Sample 2
Sample 3
Sample 4
Rel.Humidity
• All four samplesmeasuredsimultaneously
•Data temperaturecompensated
•Common bias-voltage (40V) on all the time
note correlation betweenRH and fr (open samples)
encapsulated samples
open samples
M. Koskenvuori et al. Sensors and Actuators A, 115 (2004)
![Page 15: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/15.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Long-term stability - Results Long-term stability - Results
Detailed analysis of the vacuum-encapsulated samples
0 200 400 600 800 1000-6
-5
-4
-3
-2
-1
0
1
2
0 200 400 600 800 100030
40
50
60
70
80
90
100
Time [h]
df/f
[ppm
] T [°C
]
Sample 1
Sample 2
Temperature
Temperature cycle 1+30K (duration 8h)
Temperature cycle 2+30K (duration 4h)
Power-off (reboot)- amplifier- bias
Devices taken outside the chamber
M. Koskenvuori et al. Sensors and Actuators A, 115 (2004)
![Page 16: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/16.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
• Motivation• MEMS-based reference oscillator• Stability-issues• IC-electronics• Conclusions
![Page 17: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/17.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
MEMS-resonator with IC-electronics
Vbias
buffer
In2
out
Out1
loop amplifier
VDD
gnd
In1
Gaincontrol
loop amplifier
Vbias
CPCP
out
buffer
CL = 10 pF
P. Rantakari et al. Transducers’05 (2005) - submitted
![Page 18: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/18.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
Simulated results
10-1 100 101 102 103 104 105 106
-140
-120
-100
-80
-60
-40
-20
fm [Hz]
SS
B p
hase
noi
se [d
Bc/
Hz]
P has e nois e a t gateP has e nois e a t output Design parameters:
Cp = 1pFro = 630kΩgm = 0.030 mSp = 117.5 ppm∆C = 18.5542 fFgm,buffer = 0.084 mSQL = 51040
![Page 19: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/19.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
MEMS-resonator
320 µm
Photo: Jyrki Kiihamäki
![Page 20: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/20.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
MEMS-resonator
12.93 12.931 12.932 12.933 12.934 12.935 12.936 12.937-30
-20
-10
0
10
20
30
Frequency [Hz]
S21
[dB
]
S 21
12.93 12.931 12.932 12.933 12.934 12.935 12.936 12.937
-150
-100
-50
0
Frequency [Hz]
Pha
se [D
egre
e]
20V
4V
[fF]560C0Stray capacitance[µA]150IMAXMaximum current
[mH]670LmMotional inductance[Ω]500RmMotional resistance[aF]230CmMotional capacitance[nm]180DTransducer gap
110 000Q0Unloaded Q-factor[MHz]12.933F0FrequencyUnitsValueSymbolParameter
[fF]560C0Stray capacitance[µA]150IMAXMaximum current
[mH]670LmMotional inductance[Ω]500RmMotional resistance[aF]230CmMotional capacitance[nm]180DTransducer gap
110 000Q0Unloaded Q-factor[MHz]12.933F0FrequencyUnitsValueSymbolParameter
![Page 21: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/21.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
IC-electronics
• STMicroelectronics process
–BiCMOS–0.25 µm–2.5 V
![Page 22: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/22.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
Loop-amplifier
1 0 5 1 0 6 1 0 7- 1 6 0
- 1 5 5
- 1 5 0
- 1 4 5
- 1 4 0
- 1 3 5
- 1 3 0
- 1 2 5
F r e q u e n c y [ H z ]
Noi
se [d
Bm
/Hz]
I n p u t R e d u c e d N o i s e o f d 5
1 . 51 . 61 . 71 . 81 . 92
1 0 3 1 0 4 1 0 5 1 0 6 1 0 7
- 2 0
- 1 0
0
1 0
2 0
3 0
4 0
F r e q u e n c y [ H z ]
Gai
n [d
B]
1 . 71 . 81 . 922 . 1
Frequency [Hz]
Gai
n [d
B]
Frequency [Hz]
Noi
se [d
Bm
/Hz]
24854992011087253
rout [kΩ]
29.9611.289272.250.929.8455.5208813.55.41.98.25141.046240161.85.88260.03318333.21.75.19393.0583138.555.41.64.43524.4184205.2582.11.5
Vn [nV/√ Hz]gm [uS]Pdc [uW]Idc [uA]Vb [V]
24854992011087253
rout [kΩ]
29.9611.289272.250.929.8455.5208813.55.41.98.25141.046240161.85.88260.03318333.21.75.19393.0583138.555.41.64.43524.4184205.2582.11.5
Vn [nV/√ Hz]gm [uS]Pdc [uW]Idc [uA]Vb [V]
![Page 23: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/23.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
MEMS-Based reference oscillator
MEMS-resonator with IC-electronics
P. Rantakari et al. Transducers’05 (2005) - submitted
-1000 -500 0 500 1000-150
-100
-50
0
Frequency[Hz]
PSD
[dB
m/H
z]
Agilent 89400 dynamic range: 120 dB
buffer noise
-1000 -500 0 500 1000-1000 -500 0 500 1000-150
-100
-50
0
-150
-100
-50
0
Frequency[Hz]
PSD
[dB
m/H
z]
Agilent 89400 dynamic range: 120 dB
buffer noise
Parameter Symbol Value UnitFrequency f 0 12.93 [MHz]Output level U out 300 [mVpp]
Power consumption P 240 [µW]Motional current i mot 25 [µA]Buffer noise V n 5.7 [nV/sqrt(Hz)]Noise floor C/N -144 [dBc/Hz]
![Page 24: Centre for micro- and nanotechnology RF-MEMS activities in ...micronova.tkk.fi/files/Micronovaseminaari 2004/Micronova RF MEM… · M. Koskenvuori et al. Sensors and Actuators A,](https://reader036.vdocument.in/reader036/viewer/2022071022/5fd6bc4cde614f29d46af1c8/html5/thumbnails/24.jpg)
MMICRONOVAICRONOVACentre for microCentre for micro-- and nanotechnologyand nanotechnology
Conclusion
Summary
• MEMS devices could offer an integrable alternative for discrete components in the future
• Stability of RF-MEMS devices was found to be sufficient for even GSM-specifications
• A micromechanical oscillator was demonstrated with MEMS-resonator and custom IC-electronics
•Low power consumption was demonstrated•Sufficient noise-floor was demonstrated•Sufficient phase-noise performance is expected