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CMOS Technology Characterization for Analog and RF Design
Author : Behzad RazaviPresenter : Kyungjin Yoo
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Index
I. IntroductionII. Motivation and IssuesIII. Characterization for analog designIV. Characterization for RF design
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I. Introduction
CMOS: inadequate for analog and RF design? Limited active, passive devices Optimized technology for digital design Poor characterization and modeling
Sophisticated set of characteristics speed, noise, linearity, loss, matching, and
dc characteristics Technology characterization methods
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II. Motivation and Issues
Tradeoff difference digital CMOS technology vs. analog circuits
speed power dissipation
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II. Motivation and Issues
Need for analog characterization Inaccurate modeling, lack of modeling Rapid migration of digital circuits
Difficulties Various systems Difficult to measure Difficult to incorporate in simulations Time and effort Modification for next generation
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III. Characterization for analog design
A. DC BehaviorB. AC BehaviorC. LinearityD. MatchingE. Temperature DependentF. Noise
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A. DC Behavior
Have measured I-V data points Subthreshold characteristics of MOSFET Output resistance of short-channel MOS tran
sistors
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B. AC Behavior
device level and must be measured under bias conditions Nonlinearity of MOS gate-channel capacitance Capacitance of the n-well to the substrate
circuit level Frequently used building blocks as test vehicles (e.g.
ring oscillators) Voltage comparator for intrinsic speed of the
technology
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C. Linearity
Passive devices . Coefficients must
be measured Active devices
Minimize the nonlinearity by adequate open-loop gain
Quantify the overall nonlinearity using Fig.10
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D. Matching
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E. Temperature Dependence
Basic device parameters Output resistance, subthreshold conduction, capac
itance Other quantities
Transconductance, on-resistance, threshold voltage, ac properties
DC and AC temperature dependencies of devices must be measured and incorporated in simulations
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IV. Characterization for RF design
A. Device PropertiesB. NoiseC. Circuit Properties
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A. Device Properties
Limit active devices, More passive monolithic devices
Inductors - measured data for parameters Varactors Transformers
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B. Noise
Thermal noise of submicrometer MOS transistor long-channel approximation Capacitive coupling of the drain noise c
urrent to the gate Modulation of the threshold voltage by t
he body thermal noise 1/f noise of MOSFET’s Values to be measured
are too small to be sensed
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C. Circuit Properties
Dependent on Overall transceiver architecture Intended wireless standard
Issues in today’s RF CMOS design Variability of device and circuit parameters
with process and temperature Matching properties Frequency divider Power Amplifiers
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Thank you !
Q & A