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Supporting Information for
Solvent-Resistant Azide-Based Hole Injection/Transporting
Conjugated Polymer for Fluorescent and Phosphorescent Light-
Emitting Diodes
Cheng-Wei Huanga, Feng-Chih Changa,b, Yu-Lin Chua, Cheng-Chang Laic, Tzu-
En Lina, Chao-Yuan Zhua,* and Shiao-Wei Kuob, *
aInstitute of Applied Chemistry, National Chiao Tung University, Hsinchu, 30010 Taiwan
bDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung,
804, Taiwan
cDepartment of Chemistry, National Tsing Hua University, Hsinchu, 30013, Taiwan.
*To whom correspondence should be addressed
E-mail: [email protected] and [email protected]
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C.This journal is © The Royal Society of Chemistry 2015
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Experimental Section
4-Butyl-N,N-bis(4-bromophenyl)aniline (1)
4-Butylaniline (4.00 g, 26.8 mmol), 1-bromo-4-iodobenzene (16.7 g, 59.0 mmol), KOH (13.7 g, 243
mmol), 1,10-phenanthroline (0.176 g, 0.970 mmol), CuCl (0.100 g, 0.950 mmol), and toluene (50
mL) were added sequentially to a two-neck reaction flask equipped with a condenser. The contents
of the reaction vessel were heated under reflux for 30 min and then kept stirring for 12 h under a N2
atmosphere. The reaction mixture was filtered then extracted with toluene (100 mL) and brine (100
mL). The organic phase was dried (MgSO4), filtered, and concentrated under vacuum. The residue
was subjected to column chromatography (SiO2; hexane) to give a colorless wax (7.9 g, 64 %). 1H
NMR (Figure S1, CDCl3, δ): 7.30 (dd, 4H; ArH), 7.07 (d, 2H; ArH), 6.96 (d, 2H; ArH), 6.90 (dd, 4H;
ArH), 2.56 (t, 2H; CH2), 1.63–1.52 (m, 2H; CH2), 1.41–1.29 (m, 2H; CH2), 0.93 (t, 3H; CH3).
4-Butyl-N,N-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane-4-phenyl)aniline (2)
n-Butyllithium (2.5 M in hexane; 6.59 mL, 16.5 mmol) was added to a solution of 4-butyl-N,N-bis(4-
bromophenyl)aniline (1; 3.00 g, 6.53 mmol) in anhydrous THF (65 mL) at –78 °C and then the
mixture was stirred at that temperature for 45 min. The solvent was evaporated in vacuo and then the
residue was taken up into CHCl3 and washed with brine. The organic phase was dried (MgSO4) and
concentrated; the residue was recrystallized from MeOH to give colorless crystals (2.3 g, 77%) 1H
NMR (Figure S1, CDCl3, δ): 7.64 (d, 4H; ArH), 7.03 (m, 8H; ArH), 2.56 (t, 2H; CH2), 1.63–1.53 (m,
2H; CH2), 1.38–1.31 (m, 26H; CH2 and C8H24), 0.92 (t, 3H; CH3). 13C NMR (125 MHz, CDCl3, δ):
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150.5, 145.2,139.6, 136.5, 130.1, 126.5, 122.9, 84.1, 35.3, 33.8, 24.9, 22.5, 14.0.
6-Bromobutyl-9(3,6-carbazole) (4)
3,6-Dibromo-9H-carbazole (3.50 g, 10.7 mmol), powdered anhydrous K2CO3 (2.98 g, 21.5 mmol),
1,6-dibromohexane (26.3 g, 0.107 mol), and dry MeCN (45 mL) were placed in a condenser-equipped
reaction flask and then stirred with heating at 95 °C for 36 h. After cooling to room temperature, the
mixture was filtered and the solvent evaporated. The residue was recrystallized from petroleum ether
to give colorless crystals (3.9 g, 75%). 1 H NMR (Figure S3, CDCl3, δ): 8.10 (d, 2H; ArH), 7.54 (dd,
2H; ArH), 7.25 (d, 2H; ArH), 4.25 (t, 2H; CH2), 3.35 (t, 2H; CH2), 1.90–1.75 (m, 4H; CH2), 1.51–
1.28 (m, 4H; CH2).
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10 8 6 4 2 0
g
e,f
dbac
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e gf
d
cb
a
N
BB O
OO
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a
a
ab
b b
bbb
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f
ff f f
ff
d
eg
N
BrBra
a
a
ad d
d d
b bc c
e
hg
f
Chemical Shift (ppm)
Figure S1: 1H NMR spectra of the monomers 1 and 2.
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Figure S2: 13C NMR spectrum of the monomer 2.
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Figure S3: 1H NMR spectra of the monomers 4 and 5.
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Figure S4: 13C NMR spectrum of the monomer 5.
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Figure S5: GPC trace of the copolymer PTCAzide.
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Figure S6: FTIR spectra of the copolymer PTCAzide and the corresponding monomers used in this
study.
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Figure S7: Image for polymer thin film (a)before and (b)after chlorobenzene rinsing (Left: PTCAzide,
Right: X-PTCAzide). PL spectra of PTCAzide and X-PTCAzide has been in (c) in normalized scale.
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Figure S8: First-round cyclic voltammogram of X-PTCAzide.
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Figure S9: 10 cycle Cyclic voltammograms of PTCAzide on ITO substrates at a scan rate of 100 mV
s–1.
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Figure S10: Electroluminescence from devices having the structure ITO/HITL/NPB/Alq3/LiF/Al.
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Figure S11: LE-J of device characteristic with structure ITO/HITL/NPB/Alq3/LiF/Al.
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Figure S12: Comparison of device operational stability of ITO/HITL/NPB/Alq3/LiF/Al device at a
constant operating current density of 13.6 mA cm-2 for PTCAzide device, 12.7 mA cm-2 for X-
PTCAzide device. The initial brightness was 1000 cd m-2 for both devices. The measurement was
conducted under a nitrogen atmosphere in a glove box.
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1 10
1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
10000
C
urre
nt d
ensit
y (m
A/c
m2 )
Voltage (V)
PEDOT:PSS PTCAzide X-PTCAzide
Figure S13: Leakage current of devices having the structure
ITO/HITL/Ir(ppy)3:PVK/BCP/Alq3/LiF/Al.