Bachelor/Master Thesisat Compound Semiconductor Technology (CST)
Development of a Photolithographic Method for Optoelectronic Devices based on MOCVDgrown TMDC
Transition metal dichalcogenides (TMDC) monolayers as well as heterostructures are a compelling class of 2D
materials with potential applications in optoelectronics, flexible electronics, chemical sensing and quantum
technologies. At the monolayer limit, those materials exhibit a direct band gap from the nearinfrared to the visible
range, which makes them particularly interesting for optoelectronic applications such as light emitting diodes (LED) or
photodetectors.
Our present research focuses on the metalorganic chemical vapor deposition (MOCVD) of the semiconducting
TMDC (e.g. MX2 with M=Mo/W and X=S/Se) and their application for (opto)electronic devices. To realize potential
device applications based on 2D TMDC, a reliable photolithographic process for largescale TMDC layers on different
substrates needs to be established.
Your task includes the development of a reliable and reproducible topdown photolithographic process for different
TMDC layers on 2" sapphire substrates. The different stages of the process and their influence on the material
properties of the layers need to be analyzed. To verify the feasibility of the developed method, first test devices shall
be processed and characterized. This work will be carried out in our cleanroom facilities at the Zentrallabor für Mikro
und Nanotechnologie.
Prior lab work experience is not required, enjoying working independently at the lab and interest in the epitaxy and
processing of 2D materials are beneficial.
InstituteCompound Semiconductor TechnologyRWTH Aachen UniversitySommerfeldstr. 1852074 Aachen
ContactAnnika Grundmann M.Sc.
[email protected]aachen.de
Patterned MoS2Prototype MoS2 device
