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Page 1: Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069

Developing Nanostructured Inorganic-OrganicDeveloping Nanostructured Inorganic-OrganicHybrid Semiconductors for Optoelectronic ApplicationsHybrid Semiconductors for Optoelectronic Applications

Jing Li, Rutgers University New Brunswick, DMR 0706069Jing Li, Rutgers University New Brunswick, DMR 0706069

Activities and Findings

• Synthesized the first perfectly ordered crystal lattice of semiconductor quantum dots, In2Te3 (trien).

• Discovered and characterized a number of low band gap hybrid semiconductors based on III-VI and V-VI binary and I-III-VI and I-V-VI ternary compounds that are potentially useful for photovoltaic and thermoelectric applications.

• Continued to modify and optimize the structure and composition of M2Q2(ba) type double-layer hybrid structures to enhance their white light emission properties.

Publications• Huang, X.-Y., Li, J. et. al. , Angew. Chem. 2009, 48, 7871.• Li, J.; Huang, X.-Y. in Oxford Handbook of Nanoscience and

Technology: Frontiers and Advances, Oxford University Press, ISBN: 978-0-19-953305-3, 2010.

• Danilovic, D.; Hamida, Y.; Yuen, T. Li, J.; J. Appl. Phys. 2010, 107, 09E153-1-3.

• Wu, M.; Li, J. et. al. Chem. Comm., 2010, 46, 1649.• Ki, W., Li, J. et. al. J. Mater. Chem. Accepted.• Yao, H.B.; Zhang, X.; Wang, X.L.; Yu, S.H.; Li, J.; Chem. Mater.

Submitted. • Banerjee, D. kim, S.J. Wu, H.H.; Li, J. Inorg. Chem. Submitted.• Li, J.; Huang. X. US Patent, E041427, 2010.

Intellectual MeritIntellectual Merit

Top: Construction of small band gap In2Te3 quantum dots (~1.2 nm) in solid state. We demonstrate here the first perfectly ordered semiconductor QD crystal lattice. Bottom-Left: Optical absorption spectra of the parent structure In2Te3 and the hybrid In2Te3(L). A blue shift of ~1.8 eV is observed. Bottom-Right: Largely enhanced quantum efficiency of white light emission of hybrid[Zn2S2-2xSe2x(ba)] systems.

In2Te3(L)

In2Te3

QY:~15%

Page 2: Developing Nanostructured Inorganic-Organic Hybrid Semiconductors for Optoelectronic Applications Jing Li, Rutgers University New Brunswick, DMR 0706069

Supervising Activities

• Postdoctoral Associates 2• Graduate Students (Ph.D.) 9• Graduate Students (M.S.)2 • Undergraduate Students 5• High School Student 1 • Visiting Professors 1

International Collaborative Activities

• Continued on international collaborative program on PV research with South ChinaUniversity of Technology (SCUT, Guangzhou, China).

• Continued on collaborative activities with AIST(Osaka, Japan), Fujian Institute of Research onStructure of Matters (FJIRSM, Fuzhou, China),University of Leipzig (Leipzig, Germany)

• Initiated a new collaboration with NationalUniversity of Singapore (Singapore).

Educational and Outreach Activities

• Advisory Board Member: Rutgers Energy Institute• Faculty Fellow: Rutgers Business, Engineering,

Science and Technology Institute• Faculty Participant: Rutgers Institute of Advanced

Materials, Devices and Technology• Faculty Participant: Laboratory for Surface

Modification• Faculty Mentor for the RiSE Summer Program• Faculty Participant: IGERT-CleanEnergy

Developing Nanostructured Inorganic-OrganicDeveloping Nanostructured Inorganic-OrganicHybrid Semiconductors for Optoelectronic ApplicationsHybrid Semiconductors for Optoelectronic Applications

Jing Li, Rutgers University New Brunswick, DMR 0706069Jing Li, Rutgers University New Brunswick, DMR 0706069

Broader ImpactBroader Impact

Industrial Collaborative Activities

• Initialized a collaborative research project with Colgate- Palmolive Co.• Continued on collaboration with Carbozyme on energy and environmental related research.• Participated in several University-Industry related

workshops and consortia.


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