©2012 TriQuint Semiconductor
Gallium Nitride (GaN) Technology & Product Development
IEEE IMS / MTT-S 2012 – Montreal, Canada
©2012 TriQuint Semiconductor
GaN – A New Enabling Technology
• Five times faster, higher frequency, faster on-chip logic • Five times more power, smaller die, increased range and sensitivity • Higher efficiency (10-20%), simplifies system integration • Higher temperature operation (up to 225°C), more robust, enables new applications
TriQuint GaN
More Power
Higher Efficiency
Higher Temp
Advanced R&D Bandwidth
Next-Generation Radars
Communication Systems
New Sensors New Missions
500 GHz / 500V per ns
Electronic Warfare
©2012 TriQuint Semiconductor
TriQuint GaN Process Variants
Broad GaN Process Roadmap
GaN Process Name Frequency Drain Bias Status
0.25-µm DC – 20 GHz ≤40V In Production
(2008)
0.15-µm DC – 40 GHz ≤20V In Release
< 0.1-µm DC – 100 GHz ≤15V Research
THz E/D GaN DC – 500 GHz ≤15V Research
©2012 TriQuint Semiconductor
TriQuint’s Technology Leadership
Government RF Program Awards
Program Goal Outcome Business Significance
TITLE III Manufacturing Readiness Higher Yield
Faster Cycle times Better Models
Lower Cost
NJTT Better Thermal Management Higher Power Density for same reliability Technology
Better performance (Bandwidth)
NEXT Faster Devices E/D Integration
Shorter Gate Technology E/D Technology
V, E, W - band Technology Mixed Signal
MPC Switch based Amplifier Very Fast GaN switch More efficient Amplifiers
W-Band LNA E/D based LNA Reduced NF > 90 GHz Extend RF and Range
©2012 TriQuint Semiconductor
Why GaN?
• Addressing key high-performance needs – Networked communications – Electronic warfare systems – ISR (intelligence, surveillance
and reconnaissance) systems – GaN delivers:
• Greater efficiency • Reduced BOMs • Reduced / eliminated combining losses
6.5W Ku-band GaAs Power Amplifier 20W Ku-band GaN Power Amplifier
30W Wideband GaN PA
55W Power Transistor
40W GaN Switch
20W Ku-band GaN PA
©2012 TriQuint Semiconductor
Lower Combining
Losses.
Efficiency Higher Temperature
Higher Bandwidth
WHY GaN?
© 2012 TriQuint Semiconductor, Inc.
Bandwidth
Higher Power Density
Smaller Size for same
power
Lower Input and Output
Capacitances Higher
Bandwidth
Higher Efficiency
Higher Power Density
Smaller Size for same
power
Lower Combining
Losses Higher
Efficiency
Higher Voltage High Power
density without loosing speed
Harmonic tunings
Higher Efficiency
Higher Power
Higher Power Density
Smaller Size for same power
Lower Combining Losses for same
Power Higher Power
Higher Temperature
Higher Material Band
gap
Insulating even at higher Temperature
Low RF losses at high
temperature
Higher Temperature
Operation
©2012 TriQuint Semiconductor
WHY GaN on SiC?
Higher Thermal Conductivity
Lower Self Heating
Better Reliability
Technology Thermal Conductivity
Channel Temperature
Reliability
GaAs 52 W/mC ~300C x1 GaN on Si 145 W/mC ~210C x120 better
GaN on SiC 330 W/mC ~140C x21000 better
4.5 W/mm Dissipation Example
©2012 TriQuint Semiconductor
GaN Standard Products
© 2012 TriQuint Semiconductor, Inc.
©2012 TriQuint Semiconductor
Power GaN Transistors
Benefits
High Power / PAE High Gain Design Flexibility Export
Target Markets
Defense EW, Radar, Comm, GP Commercial BTS, Cable, Vsat, PtP Other Instrumentation
T1G6000528-Q3 DC-6GHz
9W
T1G6001528-Q3 DC-6GHz
18W
T1G6003028-FS DC-6GHz
30W
T1G4005528-FS DC-6GHz
55W
©2012 TriQuint Semiconductor
High Power Amplifiers
Benefits
High Saturated Power High PAE Wide Bandwidth
Target Markets
Defense EW, Radar, Comm Commercial Cable, Vsat, PtP Other Instrumentation
TGA2576-FL 2.5-6GHz
30W
TGA2573 2-18GHz
10W
TGA2593-GSG 13-15GHz
20W
TGA2579-FL 14-16GHz
20W
©2012 TriQuint Semiconductor
High Power Switches
Benefits
High power handling Small Footprint Low control current (uA) Fast Switching
Target Markets
Radar Instrumentation General Purpose
4x4 Ceramic QFN
1.15 x 1.65 (mm) 1.15 x 1.65 (mm)
TGS2351-SM DC-6GHz
40W
TGS2352 DC-12GHz
20W
TGS2353 DC-18GHz
10W
©2012 TriQuint Semiconductor
GaN Enabling the Future
Low Noise Amplifiers Low NF High Gain High Survivability
Higher Frequency Ka – W band Power High Speed Logic (500GHz)
Higher Efficiency Switch-based amplifiers
Controls Limiters Mixers High performance switches
©2012 TriQuint Semiconductor
Summary
• TriQuint has been a GaN R&D innovator since 1999, currently leading
5 major contracts
• GaN is a maturing technology offering significant performance and lifetime advantages over GaAs
• GaN has broad appeal across many markets due to.... – High power density – High thermal conductivity substrate – Low NF
• TriQuint offers a broad range of GaN solutions and services: – FETs, MMICs, switches, packaged transistors / amplifiers / switches – integrated assemblies and foundry services
• TriQuint is developing new GaN processes and product solutions that improve efficiency, reduce BOMs and satisfy requirements beyond the reach of other semiconductors