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Optimized Cu plating in fan-out wafer-level packaging
MultiPlate: a turnkey solution
Cassandra Melvin Global Product Manager, Advanced Packaging
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Outline
1. Global megatrend IoT
2. Fan-out wafer-level packaging
3. Challenges for the electroplating process
4. Optimized Cu plating for pillar
5. MultiPlate’s key technology features
6. Technical summary
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Global megatrend IoT Fan-out wafer-level packaging
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Global megatrend: Internet of Things (IoT)
PAST Today
Future?
What will be next?
Things have changed!
Smartphones
Connected TVs Wearable
SMART Home • Entertainment • Comfort
Industry • Energy • Efficiency
Auto • Safety • Environment
City • Security • Traffic
Me • Health • Wellness
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IoT in Numbers
2015 2020 2050
Connected Sensors
per person 1.4 12 130+
Sensors 10 billion 100+ billion 1+ trillion
World population 7.2 billion 7.8 billion 9.7 billion
Connected Devices 50 billion 25 billion 100+ billion
Next generation mobile devices
require new packaging
technologies
Source: Gartner 2015 McKinsey 2015
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Fan-out packaging: growth and manufacturers
300 mm wafers 2015 2016 2017 2018 2019 2020
Total wafer output M/a 0.100 0.700 1.300 1.850 2.45 2.900
RDL runs M/a 0.200 2.400 4.292 5.812 7.442 8.500
Pillar runs M/a 0 0.500 0.900 1.200 1.550 1.600
Tall pillar runs M/a 0 0.500 0.900 1.200 1.55 1.600
Source: Prismark
Source: Yole
1st
Qtr$891M2017
50%
18% 9%
23%
Key packaging technology for next generation mobile devices
eWLB and similar technologies used in automotive applications
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Fan-out packaging: key drivers
Improved thermal and electrical performance
More functionality via integration
Smaller form factor
Higher I/O count with more RDLs
FLIP
CH
IP
FAN-OUT BENEFITS
Performance Functionality Size
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Next generation challenges for ECD Cu
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Next generation challenges for ECD Cu
High current density plating >20 ASD of thick Cu >200 µm Plating high aspect ratios, up to 4:1 for tall pillar Very low organic co-deposition for minimized voiding Low non uniformity for high yield
Requirements for Cu Pillar
Fine line plating of sub 10 µm L/S Conformal RDL plating and via filling with one process Low internal stress to reduce warpage Very low organic co-deposition for minimized voiding
Requirements for Cu RDL
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Optimized Cu plating for pillar
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Challenge: high speed plating of thick Cu Plating results for 215x200 µm Cu pillar
Customer A Target
Atotech Sampling
Cu Thickness 215 µm
WIW NU 4 %
WID COP 9 µm
WID NU 2 %
TTV 30 µm
Total time 48.25 min
Dep rate 4.4 µm/min
Temp RT
Faster deposition, better uniformity, better co-planarity than customer POR
4.4 µm per minute (20 ASD) proven for 215x200 µm pillar
Diameter: 200 µm
Resist height: 240 µm
Plating height: 215 µm
Process Step 1 Step 2 Step 3
Plating time
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Challenge: high speed plating of thick Cu Excellent uniformity for 220x200 µm Cu pillar
Customer B Target
Atotech Sampling
Cu Thickness 220µm 245 µm
WIW NU < 5% 3.3 %
WID COP < 25 µm 12 µm
WID NU < 5 % 2.5 %
TTV < 40 µm 39 µm
TIR < 15 µm 7 µm
Total time 55 min
Dep rate 4.4 µm/min
Temp 25 °C
Process Step 1 Step 2 Step 3 Step 4
Plating time
120 sec
720 sec
1810 sec
642 sec
Superior uniformity performance compared to customer POR
4.4 µm per minute (20 ASD) proven for 220x200 µm pillar
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Flow simulation MultiPlate @ 100% velocity Comparison: Diffusion speed = green Convection speed = red
Low AR tall pillar Diameter: 200 µm Resist height: 240 µm Plating height: 215 µm
High AR tall pillar Diameter: 45 µm Resist height: 200 µm Plating height: 180 µm
Challenge: high speed plating of high AR thick Cu Diffusion versus convection plating speed in high AR structures
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Challenge: high speed plating of high AR thick Cu Promising results on 180x45 µm tall Cu pillar; development still on-going
Customer C Target
Atotech Sampling, Current Status
Cu Thickness 180 µm 165 µm
WIW NU < 5% 9 %
WID COP < 10 µm 7 µm
TTV ≤ 50 µm 50 µm
10 Step Recipe Process
High Cu VMS (70/70/50)
Total time 43 min
Dep rate 4.4 µm/min
Temp
Sampling showed promising results plating high AR tall pillar in MultiPlate
R&D status for 4.4 µm per minute (20 ASD) on 180x45 µm pillar
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Challenge: very low organic co-deposition Results show lower co-deposition at significantly higher current densities
C.D. [ASD]
Depth [nm]
Elements [ppm] Total [ppm] C O S Cl N
MultiPlate + Spherolyte
Cu MP
25
60
0 –
10
00
73 29 7 3 250 362
40 43 29 7 18 372 469
Standard Tool +
Electrolyte
5 148 83 43 119 1068 1461
10 221 86 68 222 1576 2173
Faster plating leads to higher throughput, lower voiding to better reliability
ToF-SIMS measurement shows 75% lower co-deposition at 4-5X faster plating
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Challenge: very low organic co-deposition Influence of organic co-deposition after thermal annealing; 30 min at 400°C
Low organic co-deposition
Standard organic co-deposition
ToF-SIMS: total organic ~2000 ppm ToF-SIMS: total organic ~ 400 ppm
Organic co-deposition results in microvoids that impact electrical performance
ToF-SIMS measurement shows very low co-deposition
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Challenge: very low organic co-deposition Voiding performance after storage test; post reflow, T = 150 °C, t = 250h
7 ASD in MultiPlate 10 ASD in MultiPlate 25 ASD in MultiPlate
10 ASD in standard tool & process
Faster plating leads to higher throughput, lower voiding to better reliability
Consistent low voiding at higher current densities
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Challenge: very low organic co-deposition Two additive system and reverse pulse plating enables pure Cu deposits
Absence of strong levelers leads to less co-deposition and fewer voids
Optimize the profile shape with physical parameters, not strong levelers
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Challenge: low non uniformity for high yield Segmented anodes and programmable agitation enable substrate movement
Ave Pillar Height
18.8 µm
Ave WIP 4.26%
Ave WID 1.23%
WIW 8.4%
Ave Pillar Height
19.4 µm
Ave WIP 3.3%
Ave WID 0.8%
WIW 3.5%
Tool without agitation technology Tool with programmable agitation
Resulting in improved uniformity and superior filling of high AR features
Substrate movement during plating ensures optimized agitation and flow
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Challenge: low non uniformity for high yield Non uniformity results for 50 µm pillar, 300 mm wafer
Tool Chemistry C.D.
[ASD] Havg [µm]
WIW [%]
WIDavg [%]
WIPavg [%]
MultiPlate Atotech RP 20 19.4 3.5 0.8 3.3
Fountain Plater Standard DC 20 19.1 8.0 4.5 2.2
Fountain Plater Type B
UF2 DC 20 18.1 22.0 3.5 1.5
Non uniformity criteria [%]
WIW 5
WID 5
WIP 5
* Measurement device: confocal laser scanning microscope
Measurement* Position Wafer Die
Better uniformity performance enables higher reliability and yield
Significantly better WIW and WID non uniformity at same current density
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MultiPlate’s key technology features
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MultiPlate Enabling features for next generation technologies
High Speed Plating
Best in Class Uniformity
Excellent Voiding Performance
High Purity Metal Deposition
Double Side Plating Capability
Thick Metal Plating
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Advanced fluid flow delivery
• Optimal uniformity at high deposition rate • Thick and pure metal depositions • improved voiding performance
Segmented, stable anodes
• Adjustable current distribution for: • Best uniformity performance • Long term process stability
Free programmable agitation
• Excellent uniformity at highest plating speeds • Thick and pure metal depositions • Improved voiding performance • PATENT PENDING
Iron redox auxiliary
• Longer, more stable bath life • Lower additive consumption • Better voiding results • Longer anode life • PATENTED
Pulse plating capability
• High speed plating • Pure and thick Cu depositions • Improved voiding performance • Adjustable pillar shape
Modular design
• Easy maintenance • Quick access to subunits • Easy extendibility and customization
MultiPlate Overview of key technology features
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Technical summary
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Technical summary MultiPlate delivers clear technical advantages
Optimized process for high speed plating of high AR tall pillars
– Current densities >20 ASD for >200 µm Cu pillars with 4:1 AR
Reverse pulse plating and 2 additive system enable:
– 75% lower organic co-deposition at 4-5x faster plating for optimized reliability and throughput
– Significantly lower WIW/WID non-uniformity at higher current densities as compared to industry standard PORs
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Technical summary MultiPlate delivers clear technical advantages
Freely programmable agitation enables customizable substrate movement during plating
– Enables optimized agitation and flow, resulting in lower non-uniformity
Plating parameters enable adjustable pillar profile using physical parameters, not strong levelers
– Absence of strong levelers leads to less co-deposition and fewer voids
Parameter A Parameter B Parameter C
MultiPlate enables pure and uniform Cu deposition for high AR tall pillar
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Thank you! CONTACT:
Cassandra Melvin
Atotech Deutschland GmbH Erasmusstraße 20 10553 Berlin – Germany
+ 49 (0) 30 349 85 0 [email protected] www.atotech.com