-
IGBTHigh�speed�IGBT�in�Trench�and�Fieldstop�technology
IGW20N60H3600V�high�speed�switching�series�third�generation
Data�sheet
Industrial�Power�Control
-
2
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
High�speed�IGBT�in�Trench�and�Fieldstop�technology�Features:
TRENCHSTOPTM�technology�offering•�very�low�VCEsat•�low�EMI•�Very�soft,�fast�recovery�anti-parallel�diode•�maximum�junction�temperature�175°C•�qualified�according�to�JEDEC�for�target�applications•�Pb-free�lead�plating;�RoHS�compliant•�complete�product�spectrum�and�PSpice�Models:http://www.infineon.com/igbt/
Applications:
•�uninterruptible�power�supplies•�welding�converters•�converters�with�high�switching�frequency
G
C
E
GC
E
Key�Performance�and�Package�ParametersType VCE IC VCEsat,�Tvj=25°C Tvjmax Marking PackageIGW20N60H3 600V 20A 1.95V 175°C G20H603 PG-TO247-3
-
3
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Table�of�Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
-
4
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Maximum�ratings
Parameter Symbol Value UnitCollector-emitter�voltage,�Tvj�≥�25°C VCE 600 VDC�collector�current,�limited�by�TvjmaxTC�=�25°CTC�=�100°C
IC 40.020.0
A
Pulsed�collector�current,�tp�limited�by�Tvjmax ICpuls 80.0 ATurn off safe operating areaVCE�≤�600V,�Tvj�≤�175°C,�tp�=�1µs - 80.0 A
Gate-emitter voltage VGE ±20 VShort circuit withstand timeVGE�=�15.0V,�VCC�≤�400VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj�=�150°C
tSC
5
µs
Power�dissipation�TC�=�25°CPower�dissipation�TC�=�100°C Ptot
170.085.0 W
Operating junction temperature Tvj -40...+175 °CStorage temperature Tstg -55...+150 °CSoldering temperature,wave soldering 1.6 mm (0.063 in.) from case for 10s 260 °C
Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm
Thermal�Resistance
Parameter Symbol Conditions Max.�Value UnitCharacteristic
IGBT thermal resistance,junction - case Rth(j-c) 0.88 K/W
Thermal resistancejunction - ambient Rth(j-a) 40 K/W
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Static�Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE�=�0V,�IC�=�2.00mA 600 - - V
Collector-emitter saturation voltage VCEsat
VGE�=�15.0V,�IC�=�20.0ATvj�=�25°CTvj�=�125°CTvj�=�175°C
---
1.952.302.50
2.40--
V
Gate-emitter threshold voltage VGE(th) IC�=�0.29mA,�VCE�=�VGE 4.1 5.1 5.7 V
Zero gate voltage collector current ICESVCE�=�600V,�VGE�=�0VTvj�=�25°CTvj�=�175°C
--
--
40.01500.0
µA
Gate-emitter leakage current IGES VCE�=�0V,�VGE�=�20V - - 100 nATransconductance gfs VCE�=�20V,�IC�=�20.0A - 10.9 - S
-
5
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Electrical�Characteristic,�at�Tvj�=�25°C,�unless�otherwise�specified
Valuemin. typ. max.
Parameter Symbol Conditions Unit
Dynamic�Characteristic
Input capacitance Cies - 1100 -Output capacitance Coes - 70 -Reverse transfer capacitance Cres - 32 -
VCE�=�25V,�VGE�=�0V,�f�=�1MHz pF
Gate charge QG VCC�=�480V,�IC�=�20.0A,VGE�=�15V - 120.0 - nC
Internal emitter inductancemeasured 5mm (0.197 in.) fromcase
LE - 13.0 - nH
Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s
IC(SC)VGE�=�15.0V,�VCC�≤�400V,tSC�≤�5µsTvj�=�150°C
-120
- A
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT�Characteristic,�at�Tvj�=�25°CTurn-on delay time td(on) - 17 - nsRise time tr - 23 - nsTurn-off delay time td(off) - 194 - nsFall time tf - 11 - nsTurn-on energy Eon - 0.56 - mJTurn-off energy Eoff - 0.24 - mJTotal switching energy Ets - 0.80 - mJ
Tvj�=�25°C,VCC�=�400V,�IC�=�20.0A,VGE�=�0.0/15.0V,rG�=�14.6Ω,�Lσ�=�75nH,Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode (IKW20N60H3) reverserecovery.
Switching�Characteristic,�Inductive�Load
Valuemin. typ. max.
Parameter Symbol Conditions Unit
IGBT�Characteristic,�at�Tvj�=�175°CTurn-on delay time td(on) - 16 - nsRise time tr - 21 - nsTurn-off delay time td(off) - 227 - nsFall time tf - 14 - nsTurn-on energy Eon - 0.71 - mJTurn-off energy Eoff - 0.36 - mJTotal switching energy Ets - 1.07 - mJ
Tvj�=�175°C,VCC�=�400V,�IC�=�20.0A,VGE�=�0.0/15.0V,rG�=�14.6Ω,�Lσ�=�75nH,Cσ�=�30pFLσ,�Cσ�from�Fig.�EEnergy losses include “tail” anddiode (IKW20N60H3) reverserecovery.
-
6
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 1. Collector�current�as�a�function�of�switchingfrequency(Tj≤175°C,�D=0.5,�VCE=400V,�VGE=15/0V,rG=14,6Ω)
f,�SWITCHING�FREQUENCY�[kHz]
IC,�C
OLLECTO
R�CURRENT�[A]
1 10 100 10000
10
20
30
40
50
60
TC=80°
TC=110°
TC=80°
TC=110°
Figure 2. Forward�bias�safe�operating�area(D=0,�TC=25°C,�Tj≤175°C;�VGE=15V)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
1 10 100 10000.1
1
10
100
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
Figure 3. Power�dissipation�as�a�function�of�casetemperature(Tj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
Ptot ,�POWER�DISSIPATION�[W
]
25 50 75 100 125 150 1750
20
40
60
80
100
120
140
160
180
Figure 4. Collector�current�as�a�function�of�casetemperature(VGE≥15V,�Tj≤175°C)
TC,�CASE�TEMPERATURE�[°C]
IC,�C
OLLECTO
R�CURRENT�[A]
25 50 75 100 125 150 1750
10
20
30
40
-
7
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 5. Typical�output�characteristic(Tj=25°C)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
0 2 4 60
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Typical�output�characteristic(Tj=175°C)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
0 2 4 6 80
10
20
30
40
50
60
70
80
VGE=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Typical�transfer�characteristic(VCE=20V)
VGE,�GATE-EMITTER�VOLTAGE�[V]
IC,�C
OLLECTO
R�CURRENT�[A]
5 6 7 8 9 10 11 120
10
20
30
40
50
60
70Tj=25°CTj=175°C
Figure 8. Typical�collector-emitter�saturation�voltage�asa�function�of�junction�temperature(VGE=15V)
Tj,�JUNCTION�TEMPERATURE�[°C]
VCE(sat) ,�COLLECTO
R-EMITTE
R�SATU
RATION�[V
]
0 25 50 75 100 125 150 1751.0
1.5
2.0
2.5
3.0
3.5
4.0IC=10AIC=20AIC=40A
-
8
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 9. Typical�switching�times�as�a�function�ofcollector�current(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,rG=14,6Ω,�test�circuit�in�Fig.�E)
IC,�COLLECTOR�CURRENT�[A]
t,�SWITCHING�TIMES�[ns]
4 8 12 16 20 24 28 32 36 401
10
100td(off)tftd(on)tr
Figure 10. Typical�switching�times�as�a�function�of�gateresistor(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,IC=20A,�test�circuit�in�Fig.�E)
rG,�GATE�RESISTOR�[Ω]
t,�SWITCHING�TIMES�[ns]
5 10 15 20 25 30 35 40 45 5010
100
1000td(off)tftd(on)tr
Figure 11. Typical�switching�times�as�a�function�ofjunction�temperature(ind.�load,�VCE=400V,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)
Tj,�JUNCTION�TEMPERATURE�[°C]
t,�SWITCHING�TIMES�[ns]
0 25 50 75 100 125 150 1751
10
100td(off)tftd(on)tr
Figure 12. Gate-emitter�threshold�voltage�as�a�functionof�junction�temperature(IC=0.29mA)
Tj,�JUNCTION�TEMPERATURE�[°C]
VGE(th
) ,�GATE
-EMITTE
R�THRESHOLD
�VOLT
AGE�[V
]
0 25 50 75 100 125 150 1752
3
4
5
6typ.min.max.
-
9
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 13. Typical�switching�energy�losses�as�afunction�of�collector�current(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,rG=14,6Ω,�test�circuit�in�Fig.�E)
IC,�COLLECTOR�CURRENT�[A]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
4 8 12 16 20 24 28 32 36 400.0
0.5
1.0
1.5
2.0
2.5
3.0EoffEonEts
Figure 14. Typical�switching�energy�losses�as�afunction�of�gate�resistor(ind.�load,�Tj=175°C,�VCE=400V,�VGE=15/0V,IC=20A,�test�circuit�in�Fig.�E)
rG,�GATE�RESISTOR�[Ω]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
5 10 15 20 25 30 35 40 45 500.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00EoffEonEts
Figure 15. Typical�switching�energy�losses�as�afunction�of�junction�temperature(ind�load,�VCE=400V,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)
Tj,�JUNCTION�TEMPERATURE�[°C]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
0 25 50 75 100 125 150 1750.00
0.25
0.50
0.75
1.00
1.25EoffEonEts
Figure 16. Typical�switching�energy�losses�as�afunction�of�collector�emitter�voltage(ind.�load,�Tj=175°C,�VGE=15/0V,�IC=20A,rG=14,6Ω,�test�circuit�in�Fig.�E)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
E,�S
WITCHING�ENERGY�LOSSES�[m
J]
200 250 300 350 400 4500.00
0.25
0.50
0.75
1.00
1.25
1.50EoffEonEts
-
10
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 17. Typical�gate�charge(IC=20A)
QGE,�GATE�CHARGE�[nC]
VGE,�G
ATE
-EMITTE
R�VOLT
AGE�[V
]
0 20 40 60 80 100 120 1400
2
4
6
8
10
12
14
16120V480V
Figure 18. Typical�capacitance�as�a�function�ofcollector-emitter�voltage(VGE=0V,�f=1MHz)
VCE,�COLLECTOR-EMITTER�VOLTAGE�[V]
C,�C
APACITANCE�[pF]
0 10 20 3010
100
1000
CiesCoesCres
Figure 19. Typical�short�circuit�collector�current�as�afunction�of�gate-emitter�voltage(VCE≤400V,�start�atTj=25°C)
VGE,�GATE-EMITTER�VOLTAGE�[V]
IC(SC) ,�SHORT�CIRCUIT�COLLECTO
R�CURRENT�[A]
10 12 14 16 18 2050
100
150
200
250
300
Figure 20. Short�circuit�withstand�time�as�a�function�ofgate-emitter�voltage(VCE≤400V,�start�at�Tj≤150°C)
VGE,�GATE-EMITTER�VOLTAGE�[V]
tSC,�S
HORT�CIRCUIT�W
ITHSTA
ND�TIME�[µs]
10 11 12 13 14 150
3
6
9
12
15
-
11
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Figure 21. IGBT�transient�thermal�impedance(D=tp/T)
tp,�PULSE�WIDTH�[s]
ZthJC,�T
RANSIENT�TH
ERMAL�IMPEDANCE�[K
/W]
1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:ri[K/W]:τi[s]:
10.070410429.6E-5
20.30708516.8E-4
30.31989840.01084623
40.18715380.06925485
-
12
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
PG-TO247-3
-
13
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
t
a
a
b
b
td(off) tf trtd(on)
90% IC
10% IC
90% IC
10% IC
t
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
90% VGE
vGE(t)
t
t
iC(t)
vCE(t)
tt1 t4
2% IC
10% VGE
2% VCE
t2 t3
-
14
IGW20N60H3High�speed�switching�series�third�generation
Rev.�2.2,��2014-03-11
Revision�History
IGW20N60H3
Revision:�2014-03-11,�Rev.�2.2Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2010-07-26 Preliminary datasheet
2.1 2013-12-09 New value IRmax limit at 175°C
2.2 2014-03-11 Max ratings Vce, Tvj ≥ 25°C
We�Listen�to�Your�CommentsAny�information�within�this�document�that�you�feel�is�wrong,�unclear�or�missing�at�all�?Your�feedback�will�help�us�to�continuously�improve�the�quality�of�this�document.Please�send�your�proposal�(including�a�reference�to�this�document)�to:�[email protected]
Published�byInfineon�Technologies�AG81726�Munich,�Germany81726�München,�Germany©�2014�Infineon�Technologies�AGAll�Rights�Reserved.
Legal�DisclaimerThe�information�given�in�this�document�shall�in�no�event�be�regarded�as�a�guarantee�of�conditions�or�characteristics.With�respect�to�any�examples�or�hints�given�herein,�any�typical�values�stated�herein�and/or�any�information�regarding�theapplication�of�the�device,�Infineon�Technologies�hereby�disclaims�any�and�all�warranties�and�liabilities�of�any�kind,including�without�limitation,�warranties�of�non-infringement�of�intellectual�property�rights�of�any�third�party.
InformationFor�further�information�on�technology,�delivery�terms�and�conditions�and�prices,�please�contact�the�nearest�InfineonTechnologies�Office�(www.infineon.com).
WarningsDue�to�technical�requirements,�components�may�contain�dangerous�substances.�For�information�on�the�types�inquestion,�please�contact�the�nearest�Infineon�Technologies�Office.The�Infineon�Technologies�component�described�in�this�Data�Sheet�may�be�used�in�life-support�devices�or�systemsand/or�automotive,�aviation�and�aerospace�applications�or�systems�only�with�the�express�written�approval�of�InfineonTechnologies,�if�a�failure�of�such�components�can�reasonably�be�expected�to�cause�the�failure�of�that�life-support,automotive,�aviation�and�aerospace�device�or�system�or�to�affect�the�safety�or�effectiveness�of�that�device�or�system.�Lifesupport�devices�or�systems�are�intended�to�be�implanted�in�the�human�body�or�to�support�and/or�maintain�and�sustainand/or�protect�human�life.�If�they�fail,�it�is�reasonable�to�assume�that�the�health�of�the�user�or�other�persons�may�beendangered.
-
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information: Infineon: IGW20N60H3
https://www.mouser.com/infineonhttps://www.mouser.com/access/?pn=IGW20N60H3
Table of ContentsMaximum ratingsThermal ResistanceElectrical Characteristics (Static)Electrical Characteristics (Dynamic)Switching Characteristic, Inductive Load, at Tj lowSwitching Characteristic, Inductive Load, at Tj highChartsChartsChartsChartsChartsChartsPackage DrawingTesting ConditionsRevision HistoryDisclaimer