![Page 1: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/1.jpg)
1
HSQ Post Apply Bake ExperimentEzra Kim, Devin Brown
7/30/10
![Page 2: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/2.jpg)
2
HSQ Post Apply Bake Experiment
•
Purpose–
To identify, and confirm the effect of different post apply bake conditions for HSQ
![Page 3: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/3.jpg)
3
Process Condition
•
XR-1541 (HSQ) 6% on a 1”
square silicon substrate piece• Spin conditions = 5000 rpm, 2500 rpm/s, 60 sec• post apply bake (various conditions)• average resulting thickness (pre-develop) ~ 116nm•
Develop: MF-319 for 70 seconds, DI water rinse for
60 seconds, nitrogen blow dry
![Page 4: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/4.jpg)
4
Experiment 1•
3 post apply bake conditions•
80 C 4 min•
150 C 2 min•
250 C 2 min
![Page 5: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/5.jpg)
5
Thickness vs Dose (80C for 4 min)
0
200
400
600
800
1000
1200
0 200 400 600 800 1000 1200 1400 1600
dose(uC/cm^2)
thic
knes
s (a
ngst
rom
s)
200 650
700 1500
Residues around the square starts to appear at dose of 600uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 6: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/6.jpg)
6
Thickness vs Dose (150C for 2 min)
0
200
400
600
800
1000
1200
0 200 400 600 800 1000 1200 1400 1600
dose(uC/cm^2)
thic
knes
s (a
ngst
rom
s)
200 650
700 1500
Residues around the square starts to appear at dose of 600uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 7: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/7.jpg)
7
Thickness vs Dose (250C for 2 min)
0
200
400
600
800
1000
1200
0 200 400 600 800 1000 1200 1400 1600
dose(uC/cm^2)
thic
knes
s (a
ngst
rom
s)
200 650
700 1500
Residues around the square starts to appear at dose of 350uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 8: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/8.jpg)
8
Summary of different bake conditions
bakehighest dose with
no residue (uC/cm2)
thickness (nm)
pre-develop thickness
(nm)
80 C 4 min 550 100 116
150 C 2 min 550 99 n/a
250 C 2 min 300 81 n/a
Thickness vs Dose (~1" square)
0
200
400
600
800
1000
1200
0 200 400 600 800 1000 1200 1400 1600
dose(uC/cm^2)
thic
knes
s (a
ngst
rom
s)
80C bake for 4min150C bake for 2min250C bake for 2min
•
small difference in thickness vs. dose for the various bake conditions at lower doses (left graph)•
difference in residue around 50 x 50 um feature with different bake conditions (see right table)•
lower bake temperature can achieve a higher post develop resist thickness without residue by using higher dose (see right table)
![Page 9: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/9.jpg)
9
Experiment 2
• Purpose• see if experiment 1 is repeatable• evaluate no bake
![Page 10: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/10.jpg)
10
Thickness vs. Dose (no bake)
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400 1600
Dose (uC/cm^2)
Nor
mal
ized
Thi
ckne
ss
200 650
700 1500
Residues around the square starts to appear at dose of 600uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 11: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/11.jpg)
11
Thickness vs. Dose (80C bake for 4min)
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400 1600
Dose (uC/cm^2)
Nor
mal
ized
Thi
ckne
ss
200 650
700 1500
Residues around the square starts to appear at dose of 550uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 12: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/12.jpg)
12
Thickness vs. Dose (150C bake for 2min)
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400 1600
Dose (uC/cm^2)
Nor
mal
ized
Thi
ckne
ss
200 650
700 1500
Residues around the square starts to appear at dose of 500uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 13: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/13.jpg)
13
Thickness vs. Dose (250C bake for 2min)
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400 1600
Dose (uC/cm^2)
Nor
mal
ized
Thi
ckne
ss
200 650
700 1500
Residues around the square starts to appear at dose of 400uC/cm^2.
Squares of negative resist (HSQ) with different doses. Starting from the bottom left square to the bottom right square, doses are: 200,250,300,350,400,450,500,550,600,650 (uC/cm^2). Starting from the top left square to the top right square, doses are: 700,750,800,850,900,950,1000,1150,1300,1500 (uC/cm^2)
![Page 14: HSQ Post Apply Bake Experiment - Nanolithography · 2010-07-30 · 3 Process Condition • XR-1541 (HSQ) 6% on a 1” square silicon substrate piece • Spin conditions = 5000 rpm,](https://reader030.vdocument.in/reader030/viewer/2022040301/5e73aa4d8bd6e8280d584d6f/html5/thumbnails/14.jpg)
14
Summary of different bake conditionsThickness vs. Dose
0
0.2
0.4
0.6
0.8
1
1.2
0 200 400 600 800 1000 1200 1400 1600
Dose (uC/cm^2)
Nor
mal
ized
Thi
ckne
ss
No bake 80C bake 150C bake 250C bake
• some differences to experiment 1 but general trend is repeatable•
there is no significant difference in thickness vs. dose for the various bake conditions (left graph)•
BUT, there is a difference in residue around 50 x 50 um feature with different bake conditions (see right table)•
lower bake temperature can achieve a higher post develop resist thickness without residue by using higher dose (see right table)
bake
highest dose with no residue
(uC/cm2)
thickness (nm)
pre-
develop thickness
(nm)
no bake 550 102 116
80 C 4 min 500 101 117
150 C 2 min 450 95 114
250 C 2 min 350 86 112