RF & Protect ion Devices
Data Sheet Revision 1.1, 2012-11-07
BFP420FLow Noise Silicon Bipolar RF Transistor
Edition 2012-11-07Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.
Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.
InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BFP420F
Data Sheet 3 Revision 1.1, 2012-11-07
Trademarks of Infineon Technologies AGAURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,thinQ!™, TRENCHSTOP™, TriCore™.
Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSARdevelopment partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ ofHilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared DataAssociation Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ ofMathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor GraphicsCorporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATAMANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ ofOmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RFMicro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of TexasInstruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of DiodesZetex Limited.Last Trademarks Update 2011-11-11
BFP420F, Low Noise Silicon Bipolar RF Transistor Revision History: 2012-11-07, Revision 1.1Previous Revision: Rev. 1.0Page Subjects (major changes since last revision)
This datasheet replaces the revision from 2012-01-30.The product itself has not been changed and the device characteristics remain unchanged.Only the product description and information available in the datasheet has been expanded and updated.
BFP420F
Table of Contents
Data Sheet 4 Revision 1.1, 2012-11-07
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.4 Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185.5 Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
7 Package Information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table of Contents
BFP420F
List of Figures
Data Sheet 5 Revision 1.1, 2012-11-07
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 5-1 BFP420F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA . . . . . . . . . . . . 18Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 19Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V . . . . . . . . . . . . . . . . . . . . 20Figure 5-7 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 5-8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 5-9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 21Figure 5-10 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz . . . . . . 22Figure 5-11 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz. . . . . . . . . . 22Figure 5-12 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 5-13 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23Figure 5-14 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . . 24Figure 5-15 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24Figure 5-16 Input Matching S11 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25Figure 5-17 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 4 / 15 mA . . . . . . . . . . . 25Figure 5-18 Output Matching S22 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 5-19 Noise Figure NFmin = f (f), VCE = 3 V, IC = 4 / 16 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 26Figure 5-20 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz. . . . . . . . . . . . . . . . . . . . . 27Figure 5-21 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 7-3 Marking Description (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
List of Figures
BFP420F
List of Tables
Data Sheet 6 Revision 1.1, 2012-11-07
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-2 General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Table 5-3 AC Characteristics, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 5-4 AC Characteristics, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-5 AC Characteristics, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-6 AC Characteristics, f = 1500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-7 AC Characteristics, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-8 AC Characteristics, f = 2400 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-9 AC Characteristics, f = 3500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 5-10 AC Characteristics, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
List of Tables
BFP420F
Product Brief
Data Sheet 7 Revision 1.1, 2012-11-07
1 Product Brief
The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up toVCEO = 4.5 V and currents up to IC = 60 mA. The device is especially suited for mobile applications in which lowpower consumption is a key requirement. The typical transition frequency is approximately 25 GHz, hence thedevice offers high power gain at frequencies up to 4.5 GHz in amplifier applications. The device is housed in a thinsmall flat plastic package with visible leads.
BFP420F
Features
Data Sheet 8 Revision 1.1, 2012-11-07
2 Features
Applications
As Low Noise Amplifier (LNA) in• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)• Multimedia applications such as mobile/portable TV, CATV, FM Radio• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applicationsAs discrete active mixer in RF FrontendsAs active device in discrete oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
• General purpose low noise NPN bipolar RF transistor• Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology• 0.95 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA• 16.5 dB maximum gain (Gma) typical at 2.4 GHz, 3 V, 15 mA• 28 dBm OIP3 typical at 2.4 GHz, 4 V, 40 mA• 16.5 dBm OP1dB typical at 2.4 GHz, 4 V, 40 mA• Popular in discrete oscillators• Thin, small, flat, Pb-free (RoHS compliant) and Halogen-free
package with visible leads• Qualification report according to AEC-Q101 available
Product Name Package Pin Configuration MarkingBFP420F TSFP-4-1 1 = B 2 = E 3 = C 4 = E AMs
BFP420F
Maximum Ratings
Data Sheet 9 Revision 1.1, 2012-11-07
3 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)Parameter Symbol Values Unit Note / Test Condition
Min. Max.Collector emitter voltage VCEO
––
4.54.1
V Open baseTA = 25 °CTA = -55 °C
Collector base voltage VCBO – 15 V Open emitterCollector emitter voltage VCES – 15 V E-B short circuitedEmitter base voltage VEBO – 1.5 V Open collectorBase current IB – 9 mA –Collector current IC – 60 mA –Total power dissipation1)
1) TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the pcb.
Ptot – 210 mW TS ≤ 100 °CJunction temperature TJ – 150 °C –Storage temperature TStg -55 150 °C –
BFP420F
Thermal Characteristics
Data Sheet 10 Revision 1.1, 2012-11-07
4 Thermal Characteristics
Figure 4-1 Total Power Dissipation Ptot = f (Ts)
Table 4-1 Thermal ResistanceParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Junction - soldering point1)
1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)RthJS – 240 – K/W –
0 25 50 75 100 125 1500
20
40
60
80
100
120
140
160
180
200
220
240
260
TS [°C]
Pto
t [mW
]
BFP420F
Electrical Characteristics
Data Sheet 11 Revision 1.1, 2012-11-07
5 Electrical Characteristics
5.1 DC Characteristics
5.2 General AC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 4.5 5.5 – V IC = 1 mA, IB = 0
Open baseCollector emitter leakage current ICES –
––1
1030
μAnA
VCE = 15 V, VBE = 0VCE = 3 V, VBE = 0 E-B short circuited
Collector base leakage current ICBO – 1 30 nA VCB = 3 V, IE = 0Open emitter
Emitter base leakage current IEBO – 10 100 nA VEB = 0.5 V, IC = 0Open collector
DC current gain hFE 60 95 130 VCE = 4 V, IC = 5 mA Pulse measured
Table 5-2 General AC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Transition frequency fT 18 25 – GHz VCE = 3 V, IC = 30 mA
f = 2 GHzCollector base capacitance CCB – 0.15 0.3 pF VCB = 2 V, VBE = 0
f = 1 MHzEmitter grounded
Collector emitter capacitance CCE – 0.46 – pF VCE = 2 V, VBE = 0f = 1 MHzBase grounded
Emitter base capacitance CEB – 0.55 – pF VEB = 0.5 V, VCB = 0f = 1 MHzCollector grounded
BFP420F
Electrical Characteristics
Data Sheet 12 Revision 1.1, 2012-11-07
5.3 Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
Figure 5-1 BFP420F Testing Circuit
Table 5-3 AC Characteristics, f = 150 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmsGms
–––
3034.537
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
223033
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
0.924
1.429
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
217
2515.5
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
OUT
IN
Bias-T
Bias-TB
(Pin 1)
E C
E
VCTop View
VB
BFP420F
Electrical Characteristics
Data Sheet 13 Revision 1.1, 2012-11-07
Table 5-4 AC Characteristics, f = 450 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmsGms
–––
252931
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
212728.5
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
0.922.5
1.427
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
21.58
26.516.5
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-5 AC Characteristics, f = 900 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmsGms
–––
222526.5
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
192324
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 14 Revision 1.1, 2012-11-07
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
0.9520
1.423
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
23.58
27.517
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-6 AC Characteristics, f = 1500 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmsGma
–––
192222
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
161919,5
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
116.5
1.519
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
––
22.57
27.516
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-5 AC Characteristics, f = 900 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 15 Revision 1.1, 2012-11-07
Table 5-7 AC Characteristics, f = 1900 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmaGma
–––
1819.519
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
1416.517
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
1.115
1.517
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
249
2817
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-8 AC Characteristics, f = 2400 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmsGmaGma
–––
16.516.516.5
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
1214.515
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 16 Revision 1.1, 2012-11-07
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
1.212.5
1.615
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
24.58.5
2816.5
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-9 AC Characteristics, f = 3500 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmaGmaGma
–––
11.512.513
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
91111.5
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
1.610
1.811.5
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
228
2617
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
Table 5-8 AC Characteristics, f = 2400 MHz (cont’d)
Parameter Symbol Values Unit Note / Test ConditionMin. Typ. Max.
BFP420F
Electrical Characteristics
Data Sheet 17 Revision 1.1, 2012-11-07
Notes1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 12. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.3. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Table 5-10 AC Characteristics, f = 5500 MHzParameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.Maximum Power Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
GmaGmaGma
–––
7.58.59
–––
dB ZS = ZSoptG, ZL = ZLoptG VCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Transducer Gain@ low noise operating point@ recommended trade off oper. point@ max. linearity operating point
S21S21S21
–––
5.578
–––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 4 mAVCE = 3 V, IC = 15 mAVCE = 4 V, IC = 40 mA
Noise Figure@ low noise operating pointMinimum noise figureAssociated gain@ recommended trade off oper. pointMinimum noise figureAssociated gain
NFminGass
NFminGass
––
––
2.25
2.38
––
––
dB ZS = ZSoptNVCE = 3 V, IC = 4 mA
VCE = 3 V, IC = 15 mA
Linearity@ recommended trade off oper. point3rd order intercept point at output1 dB gain compression point at output@ max. linearity operating point3rd order intercept point at output1 dB gain compression point at output
OIP3OP1dB
OIP3OP1dB
––
–
228.5
2617
––
––
dB ZS = ZL = 50 ΩVCE = 3 V, IC = 15 mA
VCE = 4 V, IC = 40 mA
BFP420F
Electrical Characteristics
Data Sheet 18 Revision 1.1, 2012-11-07
5.4 Characteristic DC Diagrams
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in μA
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V
0 1 2 3 4 5 60
5
10
15
20
25
30
35
40
45
50
55
60
65
IB = 25µA
IB = 75µA
IB = 125µA
IB = 175µA
IB = 225µA
IB = 275µA
IB = 325µA
IB = 375µA
IB = 425µA
IB = 475µA
IB = 525µA
IB = 575µA
IB = 625µA
IB = 675µA
IB = 725µA
VCE
[V]
I C [
mA
]
10−1
100
101
102
101
102
IC
[mA]
h FE
BFP420F
Electrical Characteristics
Data Sheet 19 Revision 1.1, 2012-11-07
Figure 5-4 Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 3 V
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 3 V
0.5 0.6 0.7 0.8 0.9 110
−5
10−4
10−3
10−2
10−1
100
101
102
VBE
[V]
I C [
mA
]
0.5 0.6 0.7 0.8 0.9 110
−7
10−6
10−5
10−4
10−3
10−2
10−1
100
VBE
[V]
I B [
mA
]
BFP420F
Electrical Characteristics
Data Sheet 20 Revision 1.1, 2012-11-07
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 3 V
Figure 5-7 Collector Emitter Breakdown Voltage VCER = f (RBE), IC = 1 mA
0.3 0.5 0.7 0.9 1.1 1.3 1.510
−11
10−10
10−9
10−8
10−7
10−6
VEB
[V]
I B [
A]
104
105
106
107
5
5.5
6
6.5
7
7.5
8
RBE
[Ω]
VC
ER
[V
]
RBE
B
C
E
BFP420F
Electrical Characteristics
Data Sheet 21 Revision 1.1, 2012-11-07
5.5 Characteristic AC Diagrams
Figure 5-8 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter in V
Figure 5-9 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
0 10 20 30 40 50 60 700
2
4
6
8
10
12
14
16
18
20
22
24
26
28
3.00V
2.00V
1.00V
IC
[mA]
f T [G
Hz]
4.00V
0 10 20 30 40 50 60−4−2
02468
1012141618202224262830
IC
[mA]
OIP
3 [dB
m]
3V, 900MHz4V, 900MHz3V, 1900MHz4V, 1900MHz
BFP420F
Electrical Characteristics
Data Sheet 22 Revision 1.1, 2012-11-07
Figure 5-10 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
Figure 5-11 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 1900 MHz
1213
1414
15
15
16
16
17
17
17
18
18
1819
19
19
19
2020
20
20
20
2121
21
21
21
2222
22
22
22
2323
23
23
23
2424
24
24
24
2525
25
25
25
26
2626
26
27
27
27
27
28
28
VCE
[V]
I C [
mA
]
1 1.5 2 2.5 3 3.5 45
10
15
20
25
30
35
40
45
50
55
60
0000 1111 2222
3
333
4
4
444
5
5
555
6
6
666 777
7
7
7
888
8
8
999
9
9
101010
10
10
111111
11
1212
12
12
1313
13
13
1414
14
1515
15
16
16
17
VCE
[V]
I C [
mA
]
1 1.5 2 2.5 3 3.5 45
10
15
20
25
30
35
40
45
50
55
60
BFP420F
Electrical Characteristics
Data Sheet 23 Revision 1.1, 2012-11-07
Figure 5-12 Collector Base Capacitance CCB = f (VCB), f = 1 MHz
Figure 5-13 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 15 mA
0 0.5 1 1.5 2 2.5 3 3.5 40
0.06
0.12
0.18
0.24
0.3
VCB
[V]
CC
B [
pF]
0 1 2 3 4 5 60
5
10
15
20
25
30
35
40
f [GHz]
G [d
B]
Gms
Gma
|S21
|2
BFP420F
Electrical Characteristics
Data Sheet 24 Revision 1.1, 2012-11-07
Figure 5-14 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
Figure 5-15 Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
0 10 20 30 40 50 60 70 803
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
IC
[mA]
G [d
B]
0 1 2 3 4 5 63
6
9
12
15
18
21
24
27
30
33
36
39
5.50GHz
3.50GHz
2.40GHz
1.90GHz
1.50GHz
0.90GHz
0.45GHz
0.15GHz
VCE
[V]
G [d
B]
BFP420F
Electrical Characteristics
Data Sheet 25 Revision 1.1, 2012-11-07
Figure 5-16 Input Matching S11 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA
Figure 5-17 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 4 / 15 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz
4 mA
15 mA
40 mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.45GHz
0.9GHz
1.9GHz
2.4GHz
3.5GHz
Ic = 4.0mA
Ic = 15mA
BFP420F
Electrical Characteristics
Data Sheet 26 Revision 1.1, 2012-11-07
Figure 5-18 Output Matching S22 = f (f), VCE = 3 V, IC = 4 / 15 / 40 mA
Figure 5-19 Noise Figure NFmin = f (f), VCE = 3 V, IC = 4 / 16 mA, ZS = Zopt
10.1 0.2 0.3 0.4 0.5 21.5 3 4 50
1
−1
1.5
−1.5
2
−2
3
−3
4
−4
5
−5
10
−10
0.5
−0.5
0.1
−0.1
0.2
−0.2
0.3
−0.3
0.4
−0.4
0.03 to 6 GHz
step: 1 GHz
4 mA
15 mA
40 mA
0 0.5 1 1.5 2 2.5 3 3.5 40
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
f [GHz]
NF
min
[dB
]
IC
= 4mA
IC
= 16mA
BFP420F
Electrical Characteristics
Data Sheet 27 Revision 1.1, 2012-11-07
Figure 5-20 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
Figure 5-21 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
0 5 10 15 20 25 30 350.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
Ic [mA]
NF
min
[dB
]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
0 5 10 15 20 25 30 350.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
Ic [mA]
NF
50 [d
B]
f = 0.45GHz
f = 0.9GHz
f = 1.9GHz
f = 2.4GHz
f = 3.5GHz
BFP420F
Simulation Data
Data Sheet 28 Revision 1.1, 2012-11-07
6 Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) pleaseconsult our website and download the latest versions before actually starting your design.You find the BFP420F SPICE GP model on the official homepage of Infineon RF transistors in MWO- and ADS-format, which you can import into these circuit simulation tools very quickly and conveniently. The model alreadycontains the package parasitics and is ready to use for DC- and high frequency simulations. The terminals of themodel circuit correspond to the pin configuration of the device.The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP420F SPICEGP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GPmodel itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation havebeen extracted.
BFP420F
Package Information TSFP-4-1
Data Sheet 29 Revision 1.1, 2012-11-07
7 Package Information TSFP-4-1
Figure 7-1 Package Outline
Figure 7-2 Package Footprint
Figure 7-3 Marking Description (Marking BFP420F: AMs)
Figure 7-4 Tape Dimensions
10°
MA
X.
±0.050.2
±0.051.4
1 2
±0.0
50.
8
1.2
±0.0
5
±0.040.55
±0.0
50.
2
±0.050.15
±0.050.2
0.5±0.05
0.5±0.05
4 3
TSFP-4-1, -2-PO V04
0.35
0.45
0.9
0.5 0.5
TSFP-4-1, -2-FP V04
TSFP-4-1, -2-TP V05
4 0.2
1.4
8
Pin 1 1.55 0.7