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Feb 25th, 2010
Integrated Inductors in PwrSoC
(Today and Tomorrow)
APEC 2010
SP1.4 Power Supply on Chip - PwrSoC
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Overview
♦ Today Ready for Commercialization
• Magnetic Material on Silicon
— CMOS compatible fabrication process
— 20 MHz and higher operation
• DC-DC Device With Integrated Inductor
— Assembly using existing MCM manufacturing process
— Standard JEDEC qualification & reliability tests
• Targets
— VIN < 5V, 0.8V < VOUT < 3.3V, 1A < IOUT < 2A
— Low profile, small footprint, low cost
♦ Tomorrow In Development
• Continue to Increase Level of Integration
• Magnetic Material and Conductors on Silicon
• Migrate Multiple Die to Monolithic Single Die
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Agenda
♦Market Opportunities For PwrSoC
♦Dual Chip Approach to Magnetic Integration
♦Low Cost Approach to Magnetics on Silicon
♦Technical Improvements
♦Summary
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Power Electronics Market Evolution
Linear Regulator
Next Generation PwrSoC
With Wafer Level Magnetics
Energy Utilization
• Reduction of OpEx
• Global Green Initiatives
• Extension of battery life
Higher Capacities
• Data rates increasing
• Growing data storage capacity
• Increased speed, higher noise sensitivity
New Services and Applications
• Driving additional functions
• Adding more power rails
• Shrinking board size and profile
Lower Cost
Industry wide system demands are challenging power designs to deliver
Higher Efficiency Smaller Size Lower Noise
Higher Efficiency
Smaller Size
DC-DC Switcher
Gen1 DC-DC PwrSoC
All at Lower Cost
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Power SoC’s Address Market Forces
♦Integration – increased power density
♦High frequency operation – very low noise
♦Wafer level magnetics is a PATH to:
• Low, silicon-like cost structure for magnetic components
• Cost-effective DC-DC with switcher-like efficiency solution
alternative to LDO
• Ultra-thin profiles, 0.6mm and below
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Power SoC Construction: In Volume Manufacture Today(Side by Side Vs Stacked Assembly Approach)
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Technology Enabling Magnetic Material On Silicon(Wafer Level Magnetics Approach thru Manufacturing Trials and Qualification )
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Wafer Level Inductor Construction(Fabrication Options [Design Trade-Offs])
SIMPLE
COMPLEX•Magnetic/Conductor Structure
•Toroid
•Shell (sandwiched)
•Planar Coil with Mirror
•Meander
Performance
Cost
•Magnetic Structure
•Multi Layer (Laminated)
•Single Layer
•Magnetic Anisotropy
•Annealed
•Geometric
•None
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Construction(X-Ray Image of Stacked Device)
Inductor Windings
Inductor Die
Magnetic Material
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Construction(Cross Section of Stacked Assembly)
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Magnetics on Silicon(Initial DC-DC Device Level Application Implementing Wafer Level Magnetics)
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Inductor Level Performance(Small Signal Characteristics)
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Inductor Level Performance(Large Signal Characteristics)
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Inductor Level Performance(Inductor Power Losses VIN = 3.3VDC VOUT = 1.8VDC FSWITCH = 20 MHz)
PINDUCTOR/POUT
PDC + PAC
0.2A thru 1A
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DC-DC Converter Level Performance(Efficiency – Synchronous Buck 20 MHz)
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Inductor Level Performance(External Magnetic Fields: Same Scale)
Planar Coil Without
Magnetic Plate
Planar Coil With
Magnetic Plate
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Device Level Performance(Output Ripple /Transient Response VIN = 3.3 VDC VOUT = 1.8 VDC ILOAD 0.6ADC)
Transient Response
65 mV deviation
Output Ripple
2 mVp-p
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Device Level Performance(Output Voltage CM Noise Spectra VIN = 3.3 VDC VOUT = 1.8 VDC ILOAD 0.6ADC)
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Migration to Monolithic Device(CMOS Compatible Inductor Fabrication)
Toroid inductor
Conductors &
Magnetic Material on Silicon
Magnetic Material on Silicon
Historical:
Concept designs
Today: Ready for Manufacturing
Today’s PrototypesTomorrow’s Products
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Summary and Next Steps
♦ Wafer level magnetics have been prototyped thru the
complete manufacturing process
♦ Finished devices pass qualification and reliability testing
♦ Achieved targeted inductor and device performance
♦ Low cost design construction techniques utilized
♦ Wafer level magnetic materials ready for commercialization
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Wrap Up
Thank You For Your Attention
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END