112&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Introduction More Moore, Resist Partfor
joint workshop of EUV ProjectsMedea+ T 406 Excite, WP1 Resist
and European Communities FP6,
More Moore SP3 WP6
Athens12.Mai 2005
212&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
EUV evaluation in Europe
EXCITE T406EXCITE T406EUV ImagingEUV ImagingResist part: WP1Resist part: WP1
EXCITE T406EXCITE T406EUV ImagingEUV ImagingResist part: WP1Resist part: WP1
EXTATIC T403EXTATIC T403EUV Alpha ToolEUV Alpha Tool
EXTATIC T403EXTATIC T403EUV Alpha ToolEUV Alpha Tool
SOURCE T405SOURCE T405EUV SourceEUV Source
SOURCE T405SOURCE T405EUV SourceEUV Source
EXTUMASK T404EXTUMASK T404EUV MaskEUV Mask
EXTUMASK T404EXTUMASK T404EUV MaskEUV Mask
More MooreMore MooreResistpart: SP3WP6Resistpart: SP3WP6
More MooreMore MooreResistpart: SP3WP6Resistpart: SP3WP6
Lithographic toolOptical system
EUV source
EUV mask blank EUV mask
EUV resist
MEDEA+
Projects
More MooreMore Moore SP3WP4+5SP3WP4+5
More MooreMore Moore SP3WP4+5SP3WP4+5
More MooreMore MooreSP2WP2SP2WP2
More MooreMore MooreSP2WP2SP2WP2
More MooreMore Moore SP2WP1+3SP2WP1+3
More MooreMore Moore SP2WP1+3SP2WP1+3
EU Comm., FP6 FrameProject
R&D Objectives
312&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Extract of resist requirements from the ITRS 2004
Technology node hp45 hp 32 hp 22Resolution DRAM ½ Pitch [nm] 45 32 22CD Control (3 Sigma) [nm] 1,6 1,2 0,9Resist Thickness [nm, single layer] 90-160 65-110 45-80PEB temperature sensitivity [nm/°C] 1,5 1 1Line Width Roughness [nm, 3sigma] 2 1,4 1
Further requirements for the EUV resist were added by the manufacturer of the EUV exposure tool and the lithographic process
Sensitivity [mJ/cm²] 2 -15Outgassing [molecules/cm²] 5*1010
Chemical behavior under EUV radiation Chemistry of outgassing, cross-linking, chain scission, diffusion blur, chemical reaction path
412&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
More Moore SP3 WP6 - Partners for Resist evaluation
More Moore SP3 WP6 - Partners for Resist evaluation
Karl van Werden
Michele Bertolo
David Nijkerk
Evangelos Gogolides
Cyril Vannuffel
Jean-Hervé Tortain
Peter Leunissen
Electronic Materials
512&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Specific objectives for SP3 WP6
Objectives High resolution and low LER EUV resist for 22 nm Node
1. Characterize and understand the limiting parameters of CAR resist for high resolution
2. Evaluate the resolution limit of existing resist.
3. Understand the formation of Line Edge Roughness and evaluate the impacts on device / propose LER quantification methods.
.
612&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
This work package SP3-WP6, has the following tasks:
•Physicochemical characterization of photoresists. Developing the necessary characterization tools and
techniques allowing to understand the physic of CAR and the impact of thin film.
•Search of EUV resist systems for the 22 nm node, to propose formulation of EUV resist, fulfilling the
requirements of the EUV lithography.
•Evaluation of the 22 nm node capability (resolution limit) of existing and novel resist systems
•Line Edge Roughness. Simulate the resist performance and LER formation, propose LER quantification methods,
and understanding and looking at the impact of Line Edge Roughness on CD budget and impact on device.
712&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Task 6.1: Physicochemical characterization of photoresists. Participants : AZ Electronic Materials, CNRS, IMEL, Elettra.
The main aim of this task is to increase the understanding of diffusion phenomena in thin films and substrate-resist-interference effects.Tg characterization a) Bulk characterization of EUV resist with Modulated Thermal Differential
Scanning Calorimetry (MTDSC) (IMEL). b)Tg of UTR films, with thickness of 80 nm, will be measured by:
1) Ultra Thin Film Interferometry a method developed at IMEL2) Spectroscopic ellipsometry measurement of UTR films during heating
at CNRS
These studies will be supported by modeling of the thin film and diffusion effects.
SP3-WP6 High resolution and low LER EUV resistFour main tasks will be performed:
812&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Out gassingOut gassing of the resist and resist material will be evaluated using the synchrotron radiation facility of ELETTRA. a) mass spectrometry studiesb) analysis how the out gassed material redeposit nearby, e.g. on a wafer or on a multilayer mirror.
Bulk resist characterizationCharacterizations will be carried out to determine the blanket resist properties like speed, thickness uniformity, pinholes, etc.The performance of available resists will be compared to EUV requirements. The characteristics of the existing resists will be taken into account for the development of new EUV resist systems (task 6.2).
Task 6.1: Physicochemical characterisation of photoresists.
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Task 6.2 EUV resist systems for 22 nm node. Partner: AZ Electronic Materials
On the based of resist materials characterization, new EUV resists systems formulation will be done. Special attention will be directed to outgassing of resist components and adequate sensitivity adjustment.
With the access to the alpha EUV exposure tool the assessment of resist performance and process windows will get a new quality. The results of task 6.3 will be used to further optimize resist formulations and processing for best performance (Task 6.2).
For the principle of chemically amplification there are large concerns about the ability of such resist to achieve 22 nm line and space resolution. So research work is mandatory to understand the limiting factors. Simulation and modeling have to continue to contribute to the understanding of the limiting factors for CAR. AZ EM can support these issues by model resist to
prove theory with experience.
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Task 6.3: Evaluation of 22 nm capability of resists. Participants: CEA-Leti and AZ Electronic Materials
The lithographic evaluations, of commercial and novel photo resists to support task 6.2. To assess the resolution limit, the printing will be done by direct writing e-beam technique and EUV interferometric lithography. This last EUV-IL will be carried out at PSI (Paul Scherrer Institute).
The goal of this work package, is to assess the capability of resists to achieve the 22 nm node requirements and ITRS LER requirements with an “orientation “decision at 24 months. If the requirements are not achieved at this time, research actions will be pursued during the third year of the project. If the resolution requirements are achieved, the task will be oriented to process development and integration for the alpha tool needs.
1112&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Task 6.4 Understanding LER for the 22 nm node and its impact Partners: IMEL, IMEC, TNO.This task has the following sub-tasks: Protocol on measurement and definition of LER. In order to
properly tackle issues related to LER, the methods for evaluating LER through SEM using image analysis, and quantifying LER through statistical and fractal analysis should be established. This method will be applied in the project for LER evaluation and comparison among resists. Partners: IMEL, IMEC, TNO
Understanding LER. In order to guide resist research for improving LER, it is essential to understand the various contributions to LER. This approach will be theoretical with experimental verification and validation in current systems. The following chemical contributions will be investigated: Effect of molecular weight of resist material and processing (IMEL)
1212&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Secondary Electron Scattering and shot noise (TNO)• The scattering of secondary electrons in the resist and on the
substrate gives a contribution to image blur. The main object of the current research is to determine the influence of resist and substrate composition on the behaviour of secondary electrons and consequent image blur increase. The research activities consist of measurements on resists and the development of computation and simulation models The implications of dose induced LER (shot noise) on the LER; the relation between shot noise and resist sensitivity) is of crucial interest.
LER specifications. The influence of wafer processing conditions on LER will be investigated by comparison of line shapes after lithography, etch, and the other process steps needed to come to a working device. The impact of physical LER on the device performance will be simulated. Based on this activity, specifications
will be set up for allowable LER for acceptable device performance.
Partners: IMEC, TNO.
Task 6.4 Understanding LER for the 22 nm node and its impact
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Status of the More Moore Project, Resist Part
Start of project 1.1.2004Status after 16 months, Mai 2005Results:Test equipment and test procedures for EUV resist materials in place for• Tg• out gassing
• LER measurement
• Simulation programs installed or in progress for modeling LER, secondary electron scattering, diffusion
• Evaluation of resist samples possible on base of open frame exposure
• In Europe EUV lithography possible with interference lithography at PSI, no processing infrastructure, only useful for resolution tests of EUV resists.Resolution tests of resists with E-beam exposure as alternative
1412&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL
Status of the More Moore Project, Resist Part
The lithographic performance of tested EUV resist does not meet the requirements of More Moore targets for resolution, LER and sensitivity.
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Discussions of realistic possibilities of EUV resist evaluation within the More Moore Project needed
Discussion on reliable test procedures for selecting materials
Discussion on resist strategy for model resists, verification of simulations
Status of the More Moore Project, Resist Part
1612&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL