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Dr Tony Williams – Gencoa Ltd, UK
Victor Bellido-Gonzalez, Dr Dermot Monaghan,
Dr Joseph Brindley, Robert Brown
SVC’2016, Indianapolis, IL, USA
L-8 (Wed 11th May 2016 @ 9:40am)
Linear Plasma Sources for Surface Modification and Deposition for Large Area Coating
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• Current source technology summary
• Five DC, AC & Hipims source examples for large areas
• The case for pre-treatment / deposition with self -regulating ‘smart’ operation
• Conclusions
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Linear Plasma Sources for Surface Modification and Deposition for Large
Area Coating – Dr Tony Williams – Gencoa Ltd
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Plasma Pre-treatment & Deposition Products for Large Areas
Plasma Treatment Product Categories: Application / typical current uses
DC linear ion sources Low speed web & glass
DC magnetron based plasma treaters Low to High speed / power web
AC type dual electrode plasma sources Low to High speed / power web
AC type plasma CVD sources PECVD – deposition web or glass
Hipps+ positive beam ion etching Etching of metallic substrates
DC or pulsed DC ‘inverse sputter box’ Etching of metallic substrates
DC or AC hollow cathode Low to High speed / power web
Microwave & RF linear source technology PECVD – mainly solar cells – hard to scale / high cost
A wide variety of different source technologies exist depending upon need
Focus of this presentation
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Plasma Treatment Sources
DC Linear ion sources
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Linear ion sources are typically used to pre-treat before sputter coating
scalable robust devices based upon DC power
• Linear ion sources are a powerful means to improve coating adhesion and device performance - liberates moisture and burn-off hydrocarbons.
• The linear ions sources work at sputtering pressures and with low substrate speeds of <5m/min.
• Automatic gas feedback control via the DC power supply makes operation much more simple – self-regulated beams that adapts to chamber conditions.
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Main advantage is easy scaling and simple
operation
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Easy to scale - Internal mounting im4700 ‘worlds longest’ linear ion
source – 4.7m long beam length
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NREL
Ion pre-treatment is a powerful means to improve
coating adhesion and device performance
Elcometer abrasion test (ISO 11998)
Sample without ion-beam pretreatment Sample treated by ion beam
• Abrasion resistance of coatings • Rubbing in wet conditions • Load: 100 gr. • No. Cycles: 500 • Comparative results of coating with and
without ion beam pre-treatment Results of single pass plasma pre-treat
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Parallel on-axis in-lens secondary electron detection Sample with ion-beam pre-treatment
After the tempering process no visible defects were detected on the coating.
SEM analysis confirm the good state of the coating.
Sample not treated by ion beam
Samples without ion beam pretreatment show a hazy reflection.
Due to small bubbles (5 mm) in the coating.
Comparison of tempered glass with and without the use of a single pass
plasma pre-treat with linear ion source
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Example of practical uses for linear ion sources for surface
preparation - VISTA telescope - Parana
Credit: ESO Flame Nebula (VISTA image)
Parana – Chile VISTA Telescope
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VISTA Telescope mirror coater Ion Source IM1500 At VISTA with geometrical mask
Example of practical uses for linear ion sources for surface
preparation - VISTA telescope - Parana
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Large mirror ion etching – linear ion sources ideal as easy to scale and accurate
beam control – preventing mirror damage
Ion source
Large mirror coaters 2 -4.5m optics
Sputter source
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Results Atomic Force Microscope – Surface Roughness
Untreated example ( from masked area of T-1K-R03X)
Zerodur λ/20
Highly Polished
(un-etched)
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Results AFM 3D Mapping – 1h Treatment
T-1K-R01 T-1.5K-R02 T-2K-R03
The overall surface roughness doesn’t change substantially with the ion bombardment, however composite nanotopography is enhanced
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Plus points Weakness
Highly scalable and controllable plasma beam
Low power levels – slow speeds only
DC power hence lower cost levels Less plasma excitation
High voltage beam – 500-1500 volt mean beam energies
Can damage sensitive structures – does not lead to increased roughness
Self-neutralized by electron tunnel effect – no charge build-up on insulating substrates
Low rate etching of the substrates – 1 Angstrom per pass for oxides, 40 Angstroms for polymers
Easy to implement and use – if gas has auto feedback control
Separate gas control leads to variable beam properties
Carbon anode and cathode prevents contamination
Source can etch rapidly if of a metallic nature and high power
Process Flexibilty – can be used for PECVD and PEALD
Very low rates, so only useful for R&D or ‘seed’ layers
Pros and cons of DC inverted magnetron
plasma sources
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DC magnetron based plasmas for surface pre-treatment
Plasma Treatment Sources
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A wide variety of internal and external DC magnetron based plasma treating designs
based upon process & system requirements
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Plus points Weakness
Highly scalable and controllable plasma & can run at high substrate speeds and powers
DC or pulsed power hence relatively lower cost levels than RF and microwave
Less plasma excitation – voltages typically less than 500V
Self-neutralized plasma – no charge build-up on insulators
Can run in poisoned mode or ‘gettering’ mode
Need to ‘manage’ the power load to substrate type and atmosphere – needs feedback control
Pulsed DC required for ‘moisture’ rich atmospheres
Need to prevent arcing on the target by pulsing power modes
Single electrode Not suitable for very ‘reactive’ environments, eg PECVD
Pros and cons of DC based magnetron
plasma sources
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AC type dual electrode plasma treaters (2kV) for surface pre-treatment
Magnetically enhanced AC type
higher voltage plasma
Magnetic packs angle adjustment for plasma – web interaction adjust
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COMPACT AC powered magentically enhanced dual electrode operates with a
medium frequency generator
Very small sources possible – less than 60mm space required.
Water cooled dual electrodes
Pre-distributed gas injection
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Pros and Cons of AC based magnetically enhanced
plasma sources
Plus Points Weakness
Switching high voltage AC plasma of high intensity
Could damage the substrate – adjust the magnetic angles to prevent damage
Self-neutralized switching plasma potential – no charge build-up on substrate or target – more robust in ‘dirty’ environments
Double electrode – switching from positive to negative so stable anode and cathode
Higher cost compared to single electrode DC
Highly scalable and controllable plasma & can run at high substrate speeds and powers
Higher cost compared to single electrode DC
Can run in poisoned mode or ‘gettering’ mode Need to ‘manage’ the power load to substrate type and atmosphere – needs feedback control
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AC type dual electrode plasma treaters (2kV) for surface pre-
treatment for PACVD
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Dual Electrode AC-MF – better for ‘chemical’ etching processes – high
plasma excitement
In dual AC-MF plasma discharges on each electrode the voltage alternates between cathode and anode potential providing an stable impedance for the plasma discharge
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Pros and Cons of AC based magnetically enhanced
Chemical plasma sources
Plus Points Weakness
Two separate electrodes – easy to integrate and adapt to different process chambers by re-positioning
Fixed voltage once ‘setup’
Highly scalable and controllable plasma & can run at high substrate speeds and powers – gas pumping capacity dependant
The main challenge is the precursor gas delivery – into the plasma space and separate from the plasma source
Precursor delivery external to the sources and injected directly into the high intensity plasma zone – reduces electrode contamination & extends life
Need to guard against ‘sand’ like deposit in source – needs gas separation and easy to clean
Integrated Speedflo PEM control for automatic process control and gas delivery – option of in-vacuum or remote OPTIX plasma monitoring
Rates are mainly dependant upon vacuum pumping capacity
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Hipps – ‘New’ High Impulse Positive pulses for rapid ion etching of
metallic substrates at earth potential
Hipv
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Unique and patent pending use of a Hipps power mode with positive pulsing for
high rate etching of substrates
Hipv
‘cleaning’ box to collect sputtered
material to prevent system and substrate
contamination
• Power Supply: Hipps 6kW (500 Amp maximum, +1.4kV) – multiple power supplies for higher powers.
• Highly ionized argon and other background gases accelerated towards the metallic plates at upto 1.4 kV with 400A peak pulses – substrate at earth potential hence the substrate is effectively -1.4 kV relative to the plasma source. • The sources should be angled at upto 45 deg for maximum sputter efficiency and to allow better collection of sputtered material. • Rapid removal of surface oxides and contamination – high speed substrates • Stand alone source – easy system integration (customer to supply ‘cleaning’ box)
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-0.5
0
0.5
1
1.5
2
2.5
3
3.5
-20 0 20 40 60 80 100 120 140 160 180
Volta
ge (k
V)
Time (μs)
Unique and patent pending use of a Hipps power mode with positive
pulsing for high rate etching of substrates
‘positive’ pulse drives magnetically guided
ions at a high acceleration voltage towards an earthed substrate for rapid
etching
Hipv
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Internal Ion Beams for cleaning tube internal diameters – not easy to
achieve by conventional means
Internal Ion Bombarder
+kV
DC discharge (no ion etching of internal wall) Hipv
+
Copper inner wall
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Positive etching plasma source - compact design
scalable design – multiple 6 kW PSU’s in parallel
• Compact design 166mm x 180mm and to any length (longer sources may require more power supplies connected in parallel) – new source development on-going
• Based upon high voltage / current positive pulse plasma cleaning / etching – subject to a Gencoa patent application • An alternative to inverted magnetron sputter etching for strip steel and metallic substrates
Von Ardenne
Hipv
Hipv
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plasma sources
New alternative to inverted magnetron ‘sputter’ boxes
Positive pulse source Inverted ‘sputter’ box
Unique technology with highest plasma activation available – Hipps based
DC based
High voltage and currents best to sputter native surface oxides quickly
DC slower, pulsing need to prevent arcing
More compact - No need for magnetics behind the substrate – as in the case of ‘sputter boxes’
Require components both side of the substrate
Angled beam for maximum sputter efficiency – 45 deg ion bombardment angle results in max sputter yield
Normal magnetron type plasma
Easier cleaning and system maintenance – all debris is directed away from the source
Debris collects in the source and the substrate
Hipv
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Conclusions
Choice of the correct plasma pre-treatment device depends upon process requirement
Best solution
Large scale optics and slow moving substrates Linear ion sources
High speed substrate pre-treatment DC magnetron or AC dual electrode
Reactive chemical etching / PACVD AC dual electrode / AC hollow cathode
Metallic strip / substrate cleaning Hipps positive pulse or inverted sputter box
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Gencoa is actively combining technologies and developing ways to enhance thin film
devices – Thank you for your attention
Thank You
Please visit us at Booth 506 Gencoa