MOSFETMetalOxideSemiconductorFieldEffectTransistor
CFDAAutomotive650VCoolMOS™CFDAPowerTransistorIPD65R420CFDA
DataSheetRev.2.1Final
Automotive
2
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
tab
12
3
DPAK
DrainPin 2
GatePin 1
SourcePin 3
1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFETwhileofferinganextremelyfastandrobustbodydiode.Thiscombinationofextremelylowswitching,commutationandconductionlossestogetherwithhighestrobustnessmakeespeciallyresonantswitchingapplicationsmorereliable,moreefficient,lighter,andcooler.
Features•Ultra-fastbodydiode•Veryhighcommutationruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Easytouse/drive•QualifiedaccordingtoAECQ101•Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformoldcompound
Applications650VCoolMOS™CFDAisdesignedforswitchingapplications.
Table1KeyPerformanceParametersParameter Value UnitVDS 650 V
RDS(on),max 0.42 Ω
Qg,typ 90 nC
ID,pulse 80 A
Eoss @ 400V 2.8 µJ
Body diode di/dt 500 A/µs
Qrr 0.7 µC
trr 140 ns
Irrm 8.8 A
Type/OrderingCode Package Marking RelatedLinksIPD65R420CFDA PG-TO 252 65F420A -
3
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
4
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
2MaximumratingsatTj=25°C,unlessotherwisespecified
Table2MaximumratingsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID 8.7 A TC=25°C
5.5 TC=100°C
Pulsed drain current2) ID‚pulse 27 A TC=25°C
Avalanche energy, single pulse EAS 227 mJ ID=1.8A,VDD=50V
Avalanche energy, repetitive EAR 0.34 mJ ID=1.8A,VDD=50V
Avalanche current, repetitive IAR 1.8 A
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V
Gate source voltage VGS -20 20 V static
-30 30 AC (f > 1 Hz)
Power dissipation (SMD)DPAK Ptot 83.3 W TC=25°C
Operating and storage temperature Tj‚Tstg -40 150 °C
Continuous diode forward current IS 8.7 A TC=25°C
Diode pulse current IS‚pulse 27 A TC=25°C
Reverse diode dv/dt3) dv/dt 50 V/ns VDS=0...400V,ISD≤ID,Tj=25°CMaximum diode commutation speed dif/dt 900 A/µs
1) Limited by Tj max2) Pulse width tp limited by Tj max3) Identical low side and high side switch with identical RG
5
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
3ThermalcharacteristicsTable3ThermalcharacteristicsDPAK
ValuesMin. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC 1.5 K/W
Thermal resistance, junction - ambient1) RthJA 62 K/W SMD version, device on PCB,minimal footprint
35 SMD version, device on PCB, 6cm²cooling area
Soldering temperature, wave- &reflowsoldering allowed Tsold 260 °C reflow MSL
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCBis vertical without air stream cooling.
6
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified
Table4StaticcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 3.5 4 4.5 V VDS=VGS,ID=0.3445mA
Zero gate voltage drain current IDSS 5 µA VDS=650V,VGS=0V,Tj=25°C
600 VDS=650V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) 0.378 0.42 Ω VGS=10V,ID=3.4A,Tj=25°C
0.983 VGS=10V,ID=3.4A,Tj=150°C
Gate resistance RG 4 Ω f=1MHz,opendrain
Table5DynamiccharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss 870 pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss 45 pF
Effective output capacitance, energyrelated1) Co(er) 36 pF VGS=0V,VDS=0...400V
Effective output capacitance, timerelated2) Co(tr) 161 pF ID=constant,VGS=0V,
VDS=0...400V
Turn-on delay time td(on) 10 ns VDD=400V,VGS=13V,ID=5.2A,RG=3.4Ω
Rise time tr 7 ns
Turn-off delay time td(off) 38 ns
Fall time tf 8 ns
Table6GatechargecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs 5.5 nC VDD=480V,ID=5.2A,VGS=0to10VGate to drain charge Qgd 17.5 nC
Gate charge total Qg 32 nC
Gate plateau voltage Vplateau 6.4 V
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
7
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
Table7ReversediodecharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD 0.9 V VGS=0V,IF=5.2A,Tj=25°C
Reverse recovery time trr 90 ns VR=400V,IF=5.2A,diF/dt=100A/µs(see table 8)Reverse recovery charge Qrr 0.3 µC
Peak reverse recovery current Irrm 6.2 A
8
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
5Electricalcharacteristicsdiagrams
Powerdissipation
TC[°C]
Ptot[W
]
0 40 80 120 1600
10
20
30
40
50
60
70
80
90
Ptot=f(TC)
Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-5 10-4 10-3 10-2 10-110-2
10-1
100
1010.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Safeoperatingarea
VDS[V]
ID[A
]
100 101 102 10310-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
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650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
5
10
15
20
25
30
3520 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Typ.outputcharacteristics
VDS[V]
ID[A
]
0 5 10 15 200
2
4
6
8
10
12
14
16
18
2020 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
ID[A]
RDS(on
) [Ω]
0 6 12 18 240.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
5 V
5.5 V
6 V
6.5 V
7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Typ.drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [Ω]
-40 0 40 80 1200.0
0.2
0.4
0.6
0.8
1.0
1.2typ
RDS(on)=f(Tj);ID=18.1A;VGS=10V
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650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
Typ.transfercharacteristics
VGS[V]
ID[A
]
0 2 4 6 8 100
5
10
15
20
25
30150 °C
25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Typ.forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.0 0.5 1.0 1.5 2.010-1
100
101
102125 °C
25 °C
IF=f(VSD);parameter:Tj
Typ.gatecharge
Qgate[nC]
VGS [V]
0 10 20 30 400
1
2
3
4
5
6
7
8
9
10120 V
480 V
VGS=f(Qgate);ID=5.1Apulsed;parameter:VDD
Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS
) [V]
-40 0 40 80 120540
560
580
600
620
640
660
680
700
720
740
760
VBR(DSS)=f(Tj);ID=0.25mA
11
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
Avalancheenergy
Tj[°C]
EAS [mJ]
25 75 1250
50
100
150
200
250
EAS=f(Tj);ID=1.8A;VDD=50V
Typ.capacitances
VDS[V]
C[p
F]
0 100 200 300 400 500 600100
101
102
103
104Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Typ.Cossstoredenergy
VDS[V]
Eoss[µ
J]
0 100 200 300 400 500 6000
1
2
3
4
5
6
Eoss=f(VDS)
12
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
6TestCircuits
Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform
t
V ,I
Irrm
IF
VDS
10 %Irrm
trrtF tS
QF QS
dIF / dt
dIrr / dt
VDS(peak)
Qrr = QF +QS
trr =tF +tS
VDS
IF
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)tr
ton
tf
toff
10%
90%
VDS
VGS
Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
IDVDS
VDSID
13
650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
7PackageOutlines
Figure1OutlinePG-TO252,dimensionsinmm/inches
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650VCoolMOS™CFDAPowerTransistor
IPD65R420CFDA
Rev.2.1,2015-02-11Final Data Sheet
RevisionHistoryIPD65R420CFDA
Revision:2015-02-11,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2012-07-12 Preliminary
2.1 2015-02-11 Correction of Marking Code
DisclaimerATV
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Edition2011-09-30PublishedbyInfineonTechnologiesAG81726München,Germany©2011InfineonTechnologiesAGAllRightsReserved.
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