![Page 1: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/1.jpg)
Novel SiGe Semiconductor Novel SiGe Semiconductor
Devices forDevices for
Cryogenic Power ElectronicsCryogenic Power Electronics
ICMC/CEC August-September 2005Keystone, Colorado
![Page 2: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/2.jpg)
2
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 3: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/3.jpg)
3
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 4: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/4.jpg)
4
Rufus Ward, Bill Dawson, Lijun Zhu, Randall Kirschman
GPD Optoelectronics Corp., Salem, New Hampshire
Guofu Niu, Mark Nelms
Auburn University, Dept. of Electrical and Computer
Engineering, Auburn, Alabama
Mike Hennessy, Eduard Mueller, Otward Mueller,
MTECH Labs./LTE, Ballston Lake, New York
Authors
GPD Optoelectronics GPD Optoelectronics CorporationCorporation
![Page 5: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/5.jpg)
5
Sponsors
US Office of Naval Research
US Army Aviation and Missiles Command
Defense Advanced Research Projects Agency
![Page 6: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/6.jpg)
6
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 7: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/7.jpg)
7
Goals
• Develop SiGe devices for cryogenic power use
• Exhibit the performance advantages of SiGe versus Si for cryogenic power
• Specifically:
– Demonstrate prototype SiGe power diodes for cryogenic operation
– Demonstrate a 100-W power conversion circuit, to deep cryogenic temperatures.
– To ~ 55 K
![Page 8: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/8.jpg)
8
Application Areas
• For power management and distribution (PMAD)
– Power conversion for storage and distribution
– Power conversion for motors/generators
– E.g. “All-Electric” ship
• DoD applications
– Cryogenic systems for ships and aerospace
– Propulsion systems
– Superconducting or cryogenic
– Temperature ~ 60 – 65 K (for HTSC)
![Page 9: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/9.jpg)
9
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 10: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/10.jpg)
10
Why SiGe?• Can incorporate desirable characteristics of both Si and Ge
• Can optimize devices for cryogenic applications by selective use of Si and SiGe
• SiGe provides additional flexibility through band-gap engineering (% of Ge, grading) and selective placement
• All device types work at cryogenic temperatures–
Diodes
– Field-effect transistors– Bipolar transistors– Combinations of above (IGBTs, thyristors, ...)
• Devices can operate at all cryogenic temperatures (as low as ~ 1 K if required)
• Compatible with conventional Si processing
![Page 11: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/11.jpg)
11
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 12: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/12.jpg)
12
SiGe Diode Simulations
![Page 13: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/13.jpg)
13
SiGe Heterostructure Diode
(N+ backside implant)
SiGe epilayer P+ Frontside contact
Backside contact
Si substrate N+
Si epilayer N–
![Page 14: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/14.jpg)
14
Epilayer(s)
Wafer ID Si substrate thickness(es) andcomposition
dopant(s) doping concentrations(s)(cm–3)
First series (6 types)
50584G-J 22.1 nm, 19.5% Ge n-type, phosphorus 1.8e19
50583G-J 21.8 nm, 20.5% Ge p-type, boron 1.6e19
50582F-J
n-type, 10-50 ? -cm
1e14 cm–3
21.2 nm, 20.1% Ge undoped undoped
50584A-F 22.1 nm, 19.5% Ge n-type, phosphorus 1.8e19
50583A-F 21.8 nm, 20.5% Ge p-type, boron 1.6e19
50582A-E
p-type, 10-50 ? -cm
8e14 cm–3
21.2 nm, 20.1% Ge undoped undoped
Second series (4 types)
1A70305
n-type, 1e19 cm-3 20.3 μm Si30 nm, 31% Ge
n-type, phosphorusp-type, boron
7e146.5e18
1B70307
p-type, 1e19 cm-3 20.3 μm Si30 nm, 31% Ge
p-type, boronn-type, phosphorus
5.2e141.1e19
2A70295/7
n-type, 1e19 cm-3 20.3 μm Si206 nm, 8% Ge
n-type, phosphorusp-type, boron
6e141.5e19
(3A*)70298 n-type, 1e19 cm-3
20.3 μm Si300? nm, 5.3% Ge
500? nm
n-type, phosphorusp-type, boronp-type, boron
6e143e17
1.3e19
Third series (4 types)
21** Si, n+ > 3e19* 20 μm Si n-type uniform doping, 2e14 to 6e14
22** Si, n+ > 3e19* 20 μm Si n-typegraded dopant concentration,
~1e15 at substrate to ~2e14 atSiGe epi layer
23** Si, n+ > 3e19*
20 μm SiGe, gradedGe fraction: 0% Ge atsubstrate to 20% atSiGe p+ epi layer
n-type uniform doping, 2e14 to 6e14
24*** Si, n+ > 3e19* Si, 20 μm n-typeuniform doping: 2e14 to 6e14Si,
thickness same as above(~100 nm), p+ 1e19
*This wafer was specified for another type of device, but was also used for diodes.
**Epi layer 2: SiGe, 20%Ge, maximize thickness (~100 nm), p+ 1e19.
***Epi layer 2: Si, thickness same as above (~100 nm), p+ 1e19.
![Page 15: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/15.jpg)
15
SiGe vs Si Diode Characteristics
![Page 16: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/16.jpg)
16
SiGe vs Si Forward Voltage
![Page 17: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/17.jpg)
17
SiGe vs Si and SiC Forward Voltage
0
200
400
600
800
1000
1200
1400
-200 -150 -100 -50 0 50
Temperature (degrees C)
Fo
rwa
rd D
rop
(m
V)
SiCSiGeSi #1Si #2Si #3
Univ. of Auburn measurements.
SiGe
![Page 18: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/18.jpg)
18
SiGe vs Si Reverse Recovery
Univ. of Auburn measurements.
![Page 19: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/19.jpg)
19
SiGe vs Si Reverse Recovery
Univ. of Auburn measurements.
![Page 20: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/20.jpg)
20
SiGe vs Si Reverse Recovery
MTECH Labs. measurements.
![Page 21: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/21.jpg)
21
SiGe vs Si Reverse Recovery
MTECH Labs. measurements.
![Page 22: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/22.jpg)
22
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 23: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/23.jpg)
23
SiGe Boost Converter
Outputcapacitor
SiGe diode
Switching pulse
Inductor
LoadSiGe HBT
+
–
Inputcapacitor
24 V in 48 V out
~20 – 300 K
Optoisolator
Drivecircuit
Pulsegenerator
Power supply
+
–
![Page 24: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/24.jpg)
24
SiGe 100 W Cryo Boost Converter100 kHz, 24 V in, 48 V out
![Page 25: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/25.jpg)
25
SiGe 100 W Cryo Boost ConverterBackside
![Page 26: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/26.jpg)
26
Cryostat for Measuring 100 W Circuits
![Page 27: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/27.jpg)
27
100 W SiGe Power Converter in Cryostat
![Page 28: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/28.jpg)
28
SiGe vs Si diodes in 100 W Cryo Boost Converter
![Page 29: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/29.jpg)
29
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary
![Page 30: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/30.jpg)
30
Summary• Cryogenic power conversion is of interest for a range of
applications within DoD and elsewhere.
• For cryogenic power conversion, SiGe devices are potentially superior to devices based on Si or Ge.
• We are developing SiGe semiconductor devices for cryogenic power applications.
• We have simulated SiGe diodes: results indicate improvements over Si diodes and have guided design.
• We have designed, fabricated, and used SiGe diodes (and HBTs) in power converters operating at cryogenic temperatures and converting >100 W.
![Page 31: Novel SiGe Semiconductor Devices for Cryogenic Power Electronics ICMC/CEC August-September 2005 Keystone, Colorado](https://reader036.vdocument.in/reader036/viewer/2022062408/56649eda5503460f94be9037/html5/thumbnails/31.jpg)
31
Outline
Authors and Sponsors
Goals and Applications
Why SiGe?
Designs and results
SiGe heterojunction diodes
Cryogenic power converter
Summary