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Radiation image sensor with SOI technology
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Outline
I.! Introduction II.! SOI Pixel Process III.!SOIPIX Detectors IV.! Advanced R&D V.! Summary
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I. Introduction
KEK Tokai J-PARC (30 GeV Proton) KEK Tsukuba
Super KEKB (4 GeV e+ - 7 GeV e-) Photon Factory (2.5 & 6.5 Gev Sync. Rad.)
High Energy Accelerator Research Organization (KEK)
International Linear Collider Project
30 km Long
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By Colliding Accelerated Beams,Many Secondary Particles are Generated
We must measure their position and timing in µm and ns precision.
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ATLAS Detector@CERN
Silicon Vertex Detector
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~3µm
Visible Light(~2 eV)
Si + - + -
~300µm
X-ray(<20keV)
Si +
- + -
Visible Light ~ 1 e-h / 1 photon High Energy Particle ~ 80 e-h / µm X-ray ~ 3000 e-h @10 keV
~50µm
Charged Particle ( > MeV)
Si + - + +
- - - +
Sensing Part
>300µm
X-ray(>20keV), !-ray
Si +
- + -
e-
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Present Advanced Pixel Radiation Sensor (Sensor and LSI Hybrid with large number of bump bondings)
!!Large number of metal bump bondings. !!Performances are limited by the bump size. !!Large unwanted materials which bend particle track.
(from Medipix picture)
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Silicon-On-Insulator Pixel Detector (SOIPIX)
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Bulk Device
Gate Gate Oxide
Si
SOI Device
Gate
Si
SOI has higher soft error immunity due to its ultra thin body Silicon.
Buried Oxide
Depletion Layer
Charged Particle
Charged Particle
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•!No mechanical bonding. Fabricated with semiconductor process only, so high reliability, low cost are expected.
•!Fully depleted thick sensing region with Low sense node capacitance.
•!On Pixel processing with CMOS transistors.
•!Can be operated in wide temperature (and has low single event cross section.
•!Based on Industry Standard Technology.
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Tohoku U.
Kyoto U.Tsukuba U.
JAXA/ISAS
AIST
We operate Multi-Project Wafer (MPW) run. (~twice/year)
Kanazawa I.T.
Only one SOI radiation pixel process in the world!
RIKEN
Lawrence Berkeley Nat'l Lab. Fermi Nat'l Accl. Lab.
U. Heidelberg
Louvain Univ.
IHEP/IMECAS/SARI China
AGH & IFJ, Krakow
KEK
Shizuoka U.
Hokkaido U.Osaka U.
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II. SOI Pixel Process
MPW Run Mask 24.6 x 30.8 mm
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Lapis Semi.(*) 0.2 µm FD-SOI Pixel Process
µ
" µ#
## #
(*) Former OKI Semiconductor Co. Ltd.
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Main Issue in the SOIPIX: Back-Gate Effect
Detector Voltage act as a Back Gate of the Transistors, and open back channel.
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•!•!•!•!
!"#"$
%&'(%)!*+),-(&.)-,(/!&01
•!•!
•!•!
").,2 ",+)34,+52
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Ids-Vgs and BPW
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•!•!
Produce 26.7 mm x 64 mm Sensing Area (3 Stitching).
SOPHIAS by RIKEN
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III. SOIPIX Detectors
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An example of SOIPIX: Integration Type Pixel (INTPIX)
18.4 mm
12.2 mm
µ
INTPIX5
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X-ray Image of a small dried sardine taken by a INTPIX4 sensor (3 images are combined).
INTPIX4 Pixel Size : 17 um x 17 um No. of Pixel : 512 x 832 (= 425,984) Chip Size : 10.3 mm x 15.5 mm Vsensor=200V, 250us Int. x 500 X-ray Tube : Mo, 20kV, 5mA
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14.144mm
8.70
4mm
PF-AR NE7A 33.3keV Acrylic resin 40mm 200us x 250 frames
Needle
Acrylic Resin
Stent Wire
CA
RA
-46000
8700
Arb. unit
(INTPIX4)
Examples of X-ray Image with the SOIPIX
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Examples of SOIPIX Imaging
noise 18e- rms
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IV. Advanced R&D
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Double SOI waferSensor and Electronics are located very near. This cause ..
Then we newly introduced additional conductive layer under the transistors to reduce all effects (" Double SOI).
BPW
At first, we successfully introduced BPW layer to remove the back gate effect.
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Transistor
Sensor Contact
Middle Si Contact
Metal 5
Middle Si
Metal 1
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New Sensor Structures
20µm
1µm
•! Deplete from Back Side •! Very Low Input Capacitance •! Lower Leakage current •! Better charge collection
Shizuoka Univ.
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STJ (Superconducting Tunnel Junction) on SOI
SOI transistors work at temperature below 1K.
By building STJ sensors on SOI, multiple channel readout becomes possible!
Signal from Nb/Al STJ on SOI
NMOS at 960mK
PMOS at 750mK
Tsukuba Univ. : Detection of Far Infra Red Photon
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V. Summary
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