Research in NoMaD: Nanoelectronic Materials & Devices Research Group
Research in NoMaD: Nanoelectronic Materials & Devices Research Group
Jonathan P. BirdDepartment of Electrical EngineeringUniversity at BuffaloBuffalo, NY 14260, USA
Jonathan P. BirdDepartment of Electrical EngineeringUniversity at BuffaloBuffalo, NY 14260, USA
Nanoelectronics … Although the term
nanotechnology is generally defined as utilizing
technology less than 100 nm in size, nanoelectronics
often refers to transistor devices that are so small
that inter-atomic interactions & quantum
mechanical properties need to be studied
extensively … source: Wikipedia
Presentation OverviewPresentation Overview
Today I will give an overview of some of the research in my group
in the area of nanoelectronics
Today I will give an overview of some of the research in my group
in the area of nanoelectronics
Nanoscale Quantum Transport Phenomena
Spontaneous Spin Polarization in 1D Wires
Transient Transport Phenomena in Nanodevices
Prototype Device DevelopmentNanoscale Terahertz Sensors
Reprogrammable Hybrid Nanomagnetic Devices
Characterization of New NanomaterialsMetallic Nanowires, Carbon Nanotubes
Focused-Beam Nanofabrication Techniques
NoMaD Research in Nanoelectronics: Main ThemesNoMaD Research in Nanoelectronics: Main Themes
INPUT Pulse
OUTPUTPulse
Science 303, 1621 (2004)Phys. Rev. Lett. 92, 096802(2004)Phys. Rev. Lett. 99, 136805 (2007)
Nanoscale Quantum Phenomena: Spin Readout With Nanowires Nanoscale Quantum Phenomena: Spin Readout With Nanowires
500nm
SpinDetector
TrappedSpin
All-Electrical Preparation &Readout of Trapped Single Spin!
Appl. Phys. Lett. 92, 223115 (2008)
Prototype Device Development : Nanoscale Terahertz Sensors Prototype Device Development : Nanoscale Terahertz Sensors
Characterization of New Nanomaterials: Metallic Nanowires Characterization of New Nanomaterials: Metallic Nanowires
Appl. Phys. Lett. 85, 281 (2004)Phys. Rev. B 76, 184404 (2007)
Magneto-Resistance Hysteresis:Surface Magnetism?
• The marriage of ferromagnetic materials with semiconductor devices
offers many potential advantages:
Integration of logic and memory schemes within the framework of
a single hardware
Fast non-volatile memories based on the switching of single
magnetic domains
Reduced power dissipation associated with the storage of non-
volatile memory in magnetic form
Semiconductor approaches lagging far behind metal-
basedtechnology
Semiconductor approaches lagging far behind metal-
basedtechnology
NanomagnetoelectronicsNanomagnetoelectronics
Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory
• We are exploring the implementation of a Ferro-FET that adds non-
volatile memory capability to the logic functionality of FETs
This is achieved by using a nanoscale ferromagnet as the gate
and manipulating its magnetic fringe fields to control the current
Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory
Hysteretic MR that is strongly enhanced in the threshold regime!
Hysteretic MR that is strongly enhanced in the threshold regime!
Nanomagnetoelectronics: Mag-FET for Integrated Logic & MemoryNanomagnetoelectronics: Mag-FET for Integrated Logic & Memory
• In spite of the promise of these results, there are many issues that
must be overcome in order to implement the Ferro-FET as a viable
technology
Operation temperature must be increased above 300 K
Amplitude of tunneling magneto-resistance must be increased
Convenient means to switch the gate magnetization is needed
…
• Solution of these problems could provide new advances however in
the field of reprogrammable electronics
For More Details, Please See: www.eng.buffalo.edu/~jbirdFor More Details, Please See: www.eng.buffalo.edu/~jbird