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Rugged 1.2 KV SiC MOSFETs
Fabricated in High-Volume
150mm CMOS Fab
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• Motivation for SiC Devices
• SiC MOSFET – Market Status
• High-Volume 150mm Process
• Performance / Ruggedness Validation
– Static characteristics
– Switching characteristics
– Destructive testing
• Application Support
Agenda
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Presented by: Sujit Banerjee, Kevin Matocha, Xuning Zhang, Gin Sheh, and Levi Gant
March 30, 2017 at the Applied Power Electronics Conference (APEC)
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• Ideal Switch
– Zero leakage in off-state
– Zero voltage in on-state
– Zero switching loss
Ideal Device
Breakdown Voltage
Silicon
WBG (SiC,
GaN)
UWBG (AlN,
Diamond)
Lower Ron * Area, closer to ideal switch
Sp
ecif
ic O
n-r
esis
tan
ce (
Ro
n *
Are
a)
Voltage
Cu
rre
nt
Switch Off
Switch On
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Reality: Ideal Switch Is Not Enough
Cost ManufacturabilityYield, Process Margin
RuggednessShort-circuit,
Avalanche, Surge,
ESD
PerformanceBreakdown Voltage, On-
resistance, Switching
Loss
Long-term ReliabilityVoltage, Temperature, Moisture,
Mechanical
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• Report from Yole Development, presented by Hong Lin at ECSCRM, 2016.
• Monolith Semi 1.2 kV MOSFETS will be commercially released in 2017.
• Graphic includes devices in sampling and development.
Commercially Available SiC MOSFETs
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• Compatible material, similar process steps
• Handling challenges: semi-transparent wafer
• High temperature implantation – different species
• High temperature activation
Manufacturing of SiC MOSFETs in High-Volume
150mm CMOS Fab
Concurrent manufacturing of Si and SiC – reuse established CMOS
processes – minimize special tools.
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• Epitaxial layer: Epi doping
variation
• Termination design: Dose
variation, high field in molding
compound
• JFET design: High oxide field
• Channel design: On-resistance
vs. device ruggedness
• Source/contact design: Design
rule
Design Specifications
Designed for manufacturability and ruggedness
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Long-Term Reliability at 175°C
Passed High
Temperature
Reverse Bias at
175°C, VGS = 0V,
VDS = 960V.
Passed High
Temperature Gate
Bias at 175°C,
VGS = -10V and at
VGS = +25V.
HTGB at VGS = +25V
Leakage Current at
VDS = 1200V
HTGB at VGS = -10V
Breakdown Voltage
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Power Semiconductors – Need More than Just
Semiconductors
Customers
Application Support
Packaging Technology
Semiconductor Technology
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Device
Team
Apps
Team
Making the Connection Between Devices and
Applications
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• Forward characteristics
• Reverse characteristics
• Transfer characteristics
• Junction capacitances
Static Characterization
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• Switching energy
– External gate
resistor
– Current
– Temperature
• Switching times
• Gate charge
Dynamic Characterization
Robust at dV/dt
>70V/ns
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Dynamic Characterization (Cont.)
Aux. Power Supply
Energy Storage Capacitors
Testing board
Temperature Measurement
Function GeneratorTemperature Control
Oscilloscope
DC Voltage Monitor
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Dynamic characterization testing has yielded results
indicating Monolith devices exhibit impressive
performance
Dynamic Characterization (Cont.)
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Device Ruggedness
Avalanche Test Circuit
Short-circuit Test Circuit
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Avalanche
Short-circuit
Device Ruggedness (Cont.)
VBR≈1.7kV
Ipk≈20AVGS=20VResults
indicate
withstand:
• EAV ≈ 1J
Results
indicate
device
surviving:
• VBus ≈
600V
• TOn =
5μsec
VBus≈600VVGS=20V
Ipk>250A
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Device Team
Data Sheet
Apps Team
What is the link here?
Customer
Extended Customer Application Support
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• Goal is to provide
customers with all tools
needed to fully evaluate
device performance
and reliability
• In addition to evaluation
kits
– Extensive app notes
– Consulting services
Device-Level Evaluation
Converter-Level Evaluation
Device Lifetime Evaluation
Monolith Evaluation Kit Development
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• Optimized for SiC devices
– SMD and TH devices
– MOSFET and Diode
• High resolution/accurate
measurements
• Flexible parameter
tuning
Dynamic Characterization Platform
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• Offers platform for evaluating devices in
continuous switching environment
• Modular design allows for flexible parameter
tuning
– Open/closed loop control
– Voltage/current
– Fsw
– Driving
solutions
5kW Evaluation Converter Platform
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• Allows for testing of
devices under real-life
operating conditions
– Voltage
– Current
– Temperature
…at the same time!
Reliability Evaluation Platform
• Pump-back converter
topology
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• Scalable system
• Devices stressed at full
rating with minimal real
power consumption
• Integrated signal
monitoring and data
logging
• Modularity allows for test
unit replacement without
interruption of paralleled
units
Reliability Evaluation Platform (Cont.)
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New Approach to SiC Power Semiconductors
• Deep power
semiconductor and
applications
expertise
• High performance
and quality SiC
MOSFET and diode
technology
• Manufacturing in
automotive-qualified
150mm CMOS fab
• Industry-leading
customer support
• Global manufacturing
and supply chain
excellence
• Diverse technology
portfolio to enrich
systems-level
engagements
• Extensive industrial
and automotive
experience
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• SiC MOSFETs starting to gain customer acceptance
– Multiple suppliers
– Wider offering of voltage, current and package
• Monolith is committed to offering exceptional
applications support on top of solid device technology
– In-depth knowledge of device characteristics
– Customer tools to accelerate design processes
• Monolith + Littelfuse partnership offers strong position
• For additional product information or to request samples,
click here.
Wrap Up
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Acknowledgements
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