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Distribution authorized to U.S. Gov't. agenciesonly; Test and Evaluation; AUG 1974. Otherrequests shall be referred to Naval SurfaceWeapons Center, Dahlgren Laboratory, Code FVR,Dahlgren, VA 22448.
usnswc ltr, 26 mar 1984
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ELECTROMAGNETIC SUSCEPTIBILITY INVESTIGATION
PHASE n | ( ) 26^UL»#74
6 ü
^^^SID 5ATE|TUDY.\
SUBMITTED TO: CONTRACTING OFFICER
U.S. NAVAL WEAPONS LABORATORY DAHLGREN. VA. 22448
CONTRACT NO/|^l78-73-C-^62A
1 MAR U 1975
Samt Louis, Missouri 63166 (314)232 0232
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U
PREFACE
This document is one of eight task-oriented reports prepared under Contract No.
N00178-73-C-0362 for the U. S. Naval Weapons Laboratory, Dahlgren, Virginia 22448.
The McDonnell Douglas Astronautics Company personnel involved were:
J. M. Roe, Study Manager
J. R. Chott
C. E. Clous
V, R. Ditton
T. A. Niemeier
G. W. Renken
R. D. Von Rohr
j. A. Waite
This report was reviewed by J. R. Cummings.
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TABLE OF CONTENTS
Title PSSi
1. INTRODUCTION AND SUMMARY ^
2. MOS SUSCEPTIBILITY MEASUREMENTS 2
2.1 Experimental Plan 2.1.1 CMOS NAND Gate 2.1.2 4011 Test Circuit b
3. SUSCEPTIBILITY DATA COMPARISON FOR 7400 AND 4011 14
4. SUSCEPTIBILITY DATA ANALYSIS 16
4.1 4011 Input Circuit Analysis J6 4.2 4011 Output Circuit Analysis "
5. DATA ANALYSIS IMPLICATIONS 30
5.1 Similarity of 4011 and 7400 RF Effects 30 5.2 Relative Susceptibility of 4011 and 7400 30
6. CONCLUSIONS U
References ^
Appendix A - 4011/7400 INTERFERENCE DATA COMPARISON 36
Distribution List 49
List of Pages
Title
i-ii
1 through 53
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NTEGRATED CIRCUIT SUSCEPTIBILITY MDC E1101
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1. INTRODUCTION AND SUMMARY
The increasing availability of CMOS devices to military system designers
presents the possibility of significant differences from bipolar devices vis a vis A
RF susceptibility. This report documents a preliminary investigation into possible
differences between functionally similar devices (the 7400 bipolar NAND gate and
the 4011 CMOS NAND gate) at four frequencies: .22, .91, 3.0, and 5.6 GHz. While
it -^s difficult to compare the observed susceptibility modes, it appears that the
CMOS 4011 device is slightly less susceptible than the bipolar 7400 device. The
underlying susceptibility mechanism can be explained by rectification of the RF
signal in parasitic, and protective pn junctions as in the bipolar devices^, but
the circuit reaction to these rectified currents and voltages is different. V_£
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?. MOS SUSCEPTIBILITY MEASUREMENTS
In as much as MOS technology represents a growing segment of the integrated
circuit world (one recent estimate forecasts CMOS will outstrip TTL in usage by
1976), it has been planned from the inception of the IC program to study RF suscep-
tibility of MOS devices. As the measurement techniques and results from the
bipolar studies [1, 2, 3, 4] matured, it became highly desirable to determine
whether a system designer could gain a significant improvement in overall system RF
hardness by using MOS technology in lieu of bipolar technology. This part of the
program was designed to probe that possibility by measuring a CMOS NAND gate which
is functionally identical to the previously-studied 7400 bipolar NAND gate.
2.1 Experimental Plan - Devices manufactured by the MOS technology employ
significantly different fabrication techniques than those used in bipolar devices.
MOS technology can be roughly divided into three main subdivisions: p-channel, n-
channel and complementary. In addition there are many subtechnologies: silicon
gate, metal gate, dielectric isolated, etc. The complementary MOS devices (CMOS)
include both n-channel and p-channel devices on the same chip making them
particularly attractive for study. Most digital LMOS devices have been of the
enhancement mode type. The CMOS technology can also be used to manufacture both
digital and linear devices on the same chip. For these reasons a CNN NAND gate
(4011) was chosen for study.
2.1.1 CMOS NAND Gate - The 4011 is a quad 2-input NAND gatf having the same
schematic representation as the bipolar 7400 NAND gate, although they are not pin-
for-pin interchangeable. The circuit diagram for this NAND gate is shown in
figure 1. Also depicted in figure 1 are the current and voltage conventions used
for this device throughout this report. A photomicrograph of one of the four NAND
gates on the 4011 chip is shown in figure 2. CMOS devices have very high DC input
impedance (1012n and 5 pf). very low quiescent power drain (5nW), high noise
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MDC E1101 26 JULY 1974
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immunity (30% of VDD) and the capability of operating from power supplies over the
range of 3 ^ 15 volts. Most CMOS devices are now fabricated with protective
circuits on all gate inputs and some outputs to integrate and clamp the device
voltage to a safe level. The breakdown voltage of the gate oxide is generally in
the order of 70 to 100 volts and because of the high resistance of this oxide, even
a very low energy source (static charge) is capable of damaging a device without
protection. Because of the low RF tine constants of these protective circuits,
they have no noticeable effect on circuit speed and do not interfere with normal
circuit operation.
2.1.2 4m Test Circuit - Only one of the four NAND gates on the 4011 chip was
invest.gated for RF susceptibility. A power supply voltage of 5 volts was chosen
for 4011 testing for ease of comparison with the 7400 data. Voltage and current
were measured for each of the five DC ports of the NAND gate. The bias circuitry
for the 4011 for all input/output conditions is shown in figure 3. The input
loading was chosen to simulate the nominal resistance of another CMOS device. The
output loading for each logic state was determined for the maximum source and sink
current specified. The automated measurement system used for 4011 interference
testing is shown in figure 4. This measurement system facilitates the collection
of the large amounts of data required for accurate RF susceptibility characterization
of ICs. The measurement system is discussed in the IC Susceptibility Test and
Measurement Systems Report [5]. The schematic diagram fo- the 4011 interference
measurement system is shown in figure 5.
There are five possible RF entry ports into the 4011 device: two identical
inputs, an output, the power supply (VDD) and ground (Vss). Since the inputs are
identical, the duplicate input port was not used for RF injection. All RF
measurements were performed with the 4011 DC biased in either the output high or
-f the output low case. No dynamic switching conditions were considered. Figure 6
shows the flow diagram for the 4011 RF interference testing. 5
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MDC E1101 26 JULY 1974
OUTPUT TO PRINTE»
"S/N". DEVICE S/N,
"P", "V
SET POWER COUNTER
1 • 1
SET CHANNEL COUNTER
n • 1
r-> READ SCANNER CHANNEL n
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As in 7400 interference testing, device parameters were measured for 20 RF
power levels. In 4011 testing however, one of the 20 RF power level measurements
is set aside for a DC parameter measurement (RF off). All device parameter
measurements for the 4011 with RF injection can then be compared with this RF
off case.
Preliminary 4011 susceptibility tests were performed at 910 MHz with RF
injected separately into all four device ports to determine the susceptible RF
injection ports. This testing indicated that only the input and output ports were
susceptible to RF energy (output logic state changes were experienced due to RF).
The power supply and ground RF injection ports were found to be not susceptible
(minimal output level changes at the maximum RF injection levels capable in the
automated test system). For this reason the susceptibility testing for these
unsusceptible ports was not pursued further.
Interference testing of the 4011 was then limited to 20 different RF power
levels for each device, with 5 devices at each susceptible RF injection port
(input and output), for each output logic state (output high and output low), at
each of four frequencies. An identification number was given to each device to
be tested. This number is entered into the measurement system manually and
identifies all cassette tape files, plots, data printouts, etc. All data
processing, printouts, and plots are generated from the tape cassette on an HP 9830A
computer. Figure 7 shows a data processing flow diagram for these data. A typical
data matrix printout is shown in Table 1. A typical data plot is shown in figure 8.
10
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LOAD FILF.S FROM
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3. SUSCEPTIBILITY DATA COMPARISON FOR 7400 and 4011
RF interference data on the 4011 were taken at four frequencies for the
injection ports and output logic states previously found to be susceptible. Data
plots of output voltage changes due to RF power for both the 4011 and the 7400 are
tabulated in Appendix A along with the input voltage and calibration factor plots.
The interference plots for identical 7400 and 4011 RF injection configurations are
shown together for comparison at each frequency. Table 2 outlines the major RF
effects produced on both the 7400 and the 4011 for comparison. The 7400 has four
susceptible configurations where a device may change output logic state due to RF
energy while the 4011 has only two susceptible configurations. Table 2 indicates
that there is one susceptible configuration coirmon to both the 4011 and 7400: RF
injected into the output port with the output low wbich, in both cases, •'c the most
susceptible configuration.
14
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26 JULY 1974
TABLE 2
7400/4011 RF SUSCEPTIBILITY COMPARISON
RF INJECTION CONDITIONS
RF INTO INPUT - OUTPUT HIGH
RF INTO INPUT - OUTPUT LOW
RF INTO OUTPUT - OUTPUT HIGH
RF INTO OUTPUT - OUTPUT LOW
RF INTO POWER SUPPLY OUTPUT HIGH
RF INTO POWER SUPPLY OUTPUT LOW
RF INTO GROUND - OUTPUT HIGH
RF INTO GROUND - OUTPUT LOW
7400 RESPONSE
OUTPUT GOES LOW
NO EFFECT
SOME OUTPUTS GO LOW
SOME OUTPUTS GO HIGH
OUTPUT GOES HIGHER
OUTPUT INCREASES % .5V
SOME OUTPUTS GO LOW
SOME OUTPUTS INCREASE %1V
4011 RESPONSE
OUTPUT DECREASES S J5V
OUTPUT GOES HIGH
OUTPUT DECREASES « .4V
OUTPUT GOES HIGH
NOT SUSCEPTIBLE
NOT SUSCEPTIBLE
NOT SUSCEPTIBLE
NOT SUSCEPTIBLE
15
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INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974
4. SUSCEPTIBILITY DATA ANALYSIS
The bipolar rectification model for RF effects, is based on RF signals being
rectified at various device pn junctions. The bipolar RF effects model is a
representation of an RF generated current source which can be characterized as
shown in figure 9. In the case of the 7400, there are many pn junctions on the 7400
chip, as well as many parasitics, as shown in figure 10. Each pn junction on the
chip can be replaced with the equivalent circuit of the model.
Numerous parasitic and protective diodes are present on the 4011 chip as shown
in figure 11. The parasitic junctions are inherent junctions formed in the actual
device fabrication due to isolation techniques. The manner in which parasitic
junctions are formed in a representative CMOS device is shown in figure 12.
Protective diodes in the case of CMOS devices are intentionally diffused junctions
into the over all device structure forming an input limiter circuit that provides
protectioi-« against static voltages. These diodes suggest a CMOS rectification theory
for RF effects similar to the 7400 RF effects rectification theory [1]. Both the
input and output circuitry of the 4011 are analyzed for their most susceptible
configurations using the concepts of the bipolar rectification model.
4.1 4011 Input Circuit Analysis - The DC bias circuitry for the 4011 NAND gate with
the output low is shown in figure 13 for RF injected into the input port. With high
levels of RF Injected into the input port, the input voltage decreases to a low input
state level (See Appendix A). The output voltage follows the input voltage changes
and Increases with increasing incident RF power to a specified high output state.
The input current also rises due to the Incident RF energy (from below our measure-
ment system capability to milliamps in some cases). This current is directly
attributable to the injected RF because the normal DC current into the gate with no
RF is approximately 10 pA. Using the concepts of the bipolar rectification theory,
pertinent pn junctions in the 4011 input circuit are replaced with RF effects models 16
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OUTPUT
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2S JULY 1974
and the proposed current loop is drawn as shown In figure 14. The proposed
current loop is inferred from the device and voltage variations as the incident RF
power is increased and from normal circuit theory. A measured RF generated current
of about 3.5 mA flows into the RF injection port at high RF injection levels at
220 MHz. This current drops the input voltage down below 2V causing the output
voltage to switch to a high output state. This effect is somewhat different from
the 7400 because the 4011 RF generated current source involves a different current
loop. The major RF generated current source in the 4011 is the input protective
diode to VDD shown in figure 14, The effects of the lower input diode (to Vss) may
become significant at higher RF injection levels when more RF energy is allowed
through the series resistor to this diode. The input current variations due to RF
can be plotted at each frequency vs incident power as shown in figure 15 (the
5.6 GHz data are below the measurement system noise level). The RF generated
currents are plotted with respect to incident power to be consistent with present
terminology in the detector field.
As shown in figure 15, the RF generated currents exhibit approximate square law
dependence at low RF levels and tend to saturate at high RF levels. The levels of
RF generated current decrease as the frequency increases. This behavior is quite
similar to well-founded measurements for microwave detector diodes. These 4011
data are also similar to the RF generated current data for the 7400 as shown in
figure 16. The differences in the RF generated current data for the 4011 and the
7400 are due to generator source impedance variations, area of rectifying junctions,
doping profiles, etc.
4.2 4011 Output Circuit Analysis - The DC bias circuitry for the 4011 NAND gate
with the output low is shown in figure 17 for RF injected into the output port. As
the injected RF level increases, the output level increases. Using the rectification
model and the voltage-current data, significant RF generated current sources are
22
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MDC E1101 INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974
Identified with their corresponding current loops as shown in figure 18. A MOS
device can be thought of as a voltage controlled resistor (the gate voltage
controlling the drain-to-source channel resistance). For a given gate voltage, the
channel resistance remains constant for low drain-to-source voltages.
Assuming a constant resistance for the two series n channel transistors to V^,
the rectification model predicts that the output voltage can be expressed as a
function of the RF power:
V - n x T /PCM ^ rRchannel * Rq(RFh vout Kfeuc VRF)] [Kchannel + R>n'
where ^anout = S1nk current of the 4011 *** the output low configuration.
Ig{RF) = RF generated equivalent Norton current source from the rectification
model.
Rg(RF) = equivalent source resistance of the above Norton current source from
the rectification model.
Rchannel = the series resistance of the two series n channel transistors ("on"
channel resistance from the output to Vss).
This expression for output voltage contains circuit characteristics (IF .),
device characteristics (Rchannel). and RF characteristics (I (RF), RG (RF)).
Further investigations of these functions will allow a greater understanding of the
total circuit RF susceptibility.
The preliminary measurements on the 4011 did not allow time for characterization
of Ia(RF) and Ra(RF) for a definitive model. However, assuming a constant resistance
for the two series n channels to Vss, an RF generated current can be calculated
using the output currents and voltages. The implied current which flows through
the two n channels raises the output voltage at 3 GHz to 3 volts. The RF generated
currents for the output low, output port injection case in the 4011 and the 7400
are similar. Both the 4011 and the 7400 RF generated currents have an approximate
27
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MDC E1101 26 JULY 1974
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INTEGRATED CIRCUIT SUSCE 3TIBILITY MOC El 101
26 JULY 1974
square law dependence, decrease with increasing frequency, and tend to saturate at
high RF levels. These similarities indicate that the bipolar rectification model
can reasonably be extended to include MOS devices (due to the presence of parasitic
and protective pn junctions).
29
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INTEGRATED CIRCUIT SUSCEPTIBILITY MDC E1101
26 JULY 1974
5. DATA ANALYSIS IMPLICATIONS
The comparison of input voltage, output voltage, and calibration factor for the
4011 and the 7400 is tabulated in Appendix A. These data and the corresponding
analyses indicate the susceptibility mechanisms in the 4011 device and possible
generalizations to other MOS devices.
5'1 Similarity of 4011 and 7400 RF Effects - The rectification theory used for RF
effects in pn junctions in bipolar ICs has been shown to be directly applicable to
the parasitic and protective pn junctions in MOS ICs. This bipolar rectification
theory has been used to qualitatively explain all significant effects due to injected
RF on CMOS 4011 ICs. Additional testing and analyses are required to delineate
further this model for the 4011 and other CMOS devices. It now appears that the
MOS technology can be treated identically to the bipolar technology in terms of RF
susceptibility mechanisms.
5-2 Relative Susceptibility of 4011 and 7400 - The most susceptible configuration
for the 4011 is the output low with RF injected into the output port. This config-
uration is also the most susceptible one for the 7400. A comparison of these
configurations, as shown in figure 19, shows that the 7400 is generally more
susceptible than the 4011 by a factor of two, although a comparison of individual
devices may be quite different. These data are plotted with respect to absorbed
RF power in the chip. Calibration factor is essentially the difference in the
incident power to the device and the absorbed power in the chip, or the RF rejection
properties of the device. The calibration factor for the 7400 is slightly higher
than the calibration factor for the 4011 for their most susceptible configurations.
This indicates that the total 7400 susceptibility with respect to incident power
is slightly greater than the 4011. This is not surprising in light of the proposed
30
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INTEGRATED CIRCUIT SUSCEPTIBILITY
MOC EUOl 26 JULY 1974
4011
RF INJECTED INTO OUTPUT PORT, OUTPUT LOW
220 MHz « m»m
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Figure 19 COMPARISON OF V t FOR 4011 and 7400 WITH RF INJECTED INTO OUTPUT PORT, OUTPUT LOW 31
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INTEGRATED CIRCUIT SUSCEPTIBILITY
MDC EUOl 26 JULY 1974
rectification mechanisms. The total susceptibility is essentially the :ame for
both the 4011 and the 7400.
The similarity of the calibration factors shown in Appendix A for both devices
implies that the RF impedance of the 7400 and 4011 is essentially the same. This
is understandable due to the similarity in position of the parasitic diodes causing
rectification. These diodes probably determine the RF impedance of the corresponding
RF injection ports.
Actual RF input impedance limits of the 7400 and 4011 injection ports were
calculated from the calibration factor data. These calculations indicate the
maximum and minimum values of the real RF input impedances. The results for the
7400 and 4011 are shown in table 3. These results differ from the respective DC
impedances of these devices: 1012 ohm for the input port of the 4011 and 25 ohm for
the input port of the 7400. The source of the DC impedances and the corresponding
RF impedances are completely different, resulting in the apparent contradiction.
In addition the 4011 DC input impedance is 10 2 ohm with 5 pf. This capacitance
alone results in a 4011 input port impedance at 1 GHz of about 33 ohm.
<*
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32
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MDC E1101 26 JULY 1974
RF INTO GATE INPUT
Table 3 IMPEDANCE RANGES FOR 4011 and 7400
FREQUENCY (GHz) 4011 IMPEDANCE RANGE 7400 IMPEDANCE RANGE
(n) (0)
0.22 ^\^ 14-182 ^>s\^ 9-290
25-102 ^^^^ 9-272 ^v.
^ 13-190 ^^^^^ 7-340
0.91 ^\^ ^^^.^^^
15-155 \^ 7-340 "^^
^\^ 15-171 ^S>S<, 12-205 3.0 ^^-s^ ^^^^
23-110 ^^^ 13-186 ^\
5.6 ^\. 15-166 ^^^^^^ 5-458
18-135 ^^v^ 4-693 ^\^
RF INTO GATE OUTPUT
■* r
KEY
FREQUENCY (GHz) 4011 IMPEDANCE RANGE (0)
7400 IMPEDANCE RANGE
(0)
0.22 ^"^^ 20-126
16-152 ^\^^
^^\^^ 5-458
5-458 ^\.
0.91
^"^«^ 13-199
9-272 ^^.
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3-900 ^\^
3.0
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22-113 ^v^vv^
^"^^^^ 6-396
7-340 ^"^^^^^
5.6
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14-176 ^^^^^
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5-458 ^^^-v^^
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INTEGRATED CIRCUIT SUSCEPTIBILITY
MDC E1101 28 JULY 1974
6. CONCLUSIONS
The 4011 is slightly less susceptible than the 7400 for their most susceptible
configurations (RF injected into the output with the output low). Analysis of RF
effects in the 4011 indicate that the RF signal is rectified at the device pn
junctions. All significant RF effects can be qualitatively explained using the
bipolar rectification theory from the 7400 analyses. All testing indicates
that the bipolar rectification theory applies also to MOS devices due to their
parasitic and protective pn junctions.
A complete characterization of the significant 4011 pn junctions is required
to substantiate all circuit reactions to RF interference. The characterization of
these junctions will lead to a model which can probably be extended to other CMOS
devices due to similarities in parasitic and protective diode junctions. These
similarities may allow a general RF effects model for all CMOS devices made by a
given manufacturer.
Further work is also required to examine the relative susceptibility of various
CMOS system interfaces. A CMOS-CMOS interface was simulated in the present RF
interference testing. Various other CMOS interfaces (CMOS-TTL, TTL-CMOS, HTL-CMOS,
etc.) should be studied on a system scale to determine an optimal logic system with
respect to RF susceptibility. Linear CMOS devices should also be studied to determine
if their RF effects are similar to digital CMOS devices.
All conclusions are constrained to the device, circuit, and assumptions
contained in this report. Additional testing and analyses are required to expand
and refine these results.
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MDC EUOl 26 JULY 1974
\~J REFERENCES
1. "Integrated Circuit Electromagnetic Susceptibility Investigation - Bipolar NAND Gate Study" MDC Report E 1123 dated 26 July 1974.. Prepared under contract No. N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166.
2. "Integrated Circuit Electromagnetic Susceptibility Investigation - Development Phase Report" MDC E0690 dated 19 October 1972. Prepared under contract number N00178-72-C-0213 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166
3. "Integrated Circuit Elrctromagnetic Susceptibility Investigation - Interim Report No. 1" MUC Report E0883 dated 24 August 1973. Prepared under contract number N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166
4. "Integrated Circuit Electromagnetic Susceptibility Investigation - Interim Report Nu> 2" MDC Report EQ981 dated 28 December 1973. Prepared under contract number N00178-73-C-0362 for the U. S. Naval Weapons Laboratory by McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166
5. "Integrated Circuit Electromagnetic Susceptibility Investigation - Test and Measurement Systems" MDC Report El099 dated 12 July 1974. Prepared under co ract number N00178-73-C-0362 for the U. S. Naval Weapons Laborator> oy McDonnell Douglas Astronautics Company - East, St. Louis, Missouri 63166
i: 35
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INTEGRATED CIRCUIT SUSCEPTIBILITY
APPENDIX A
4011/7400 INTERFERENCE DATA COMPARISON
MDC E1101 26 JULY 1974
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U 4011/7400 INTERFERENCE DATA COMPARISON
RF INJECTED INTO INPUT, OUTPUT LOW
4011 220 MHz
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3.0 GHz
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37
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MDC E1101 26 JULY 1974
220 MHz V ■■■
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4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT, OUTPUT HIGH
« ■••r
10
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\hsorbed{nM)
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MDC E1101 26 JULY 1974
220 MHz
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4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT LOW
U 4011 220 MHz
& mmm
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7400
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3.0 GHz
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absorbed1
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MDC E1101 26 JULY 1974
220 MHz
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m ^-M •mm mm* 1M JBSr '
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absorbed
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(mW)
5.6 GHz
IB ' Ii IB * IB
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INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT HIGH
MDC E1101 26 JULY 1974
4011 220 MHz
to 4-»
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absorbed (mW)
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3.0 GHz
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! INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT. OUTPUT LOW
MDC E1101 26 JULY 1974
U Ami 99n MU, 7400 220 MHz
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4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT, OUTPUT HIGH
MOC EUOl 26 JULY 1974
4011 220 M» ^ V)
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i a« .
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icrr":- •. •* "^•n.
—1 1—,
220 MHz
absorbed (mW,
910 MHz
S"**
, »if*^ i
t^ r
m"~'~m
absorbed
2 ■
1 S
i n
■ .«
n ■
3.0
■M
^^ c
> •
^ _»T" H^
" • . .
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5.6 GHz
. , I I
I«"' II ' 11 ' I«
absorbed (mW)
KJ\
(mW) (J
I
AffCOO/WMCCl. DOl/OLAS ASTWOttACyT-fCS COAtm/VK • CAST
■PP^-r- i mmmmmffm^mm'-
INTEGRATED CIRCUIT SUSCEPTIBILITY 4011/7400 INTERFERENCE DATA COMPARISON
RF INJECTED INTO OUTPUT. OUTPUT LOW
u 4011 220 MHz " "—■ ■■^
^ .
z>
>
pabsorbed(mW)
910 MHz ' "'"
M ■p
o ,"'" >
c •r-
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■ ■
(mW)
'r 3.0 GHz
0 i 1
c
i= absorbed
5.6 GHz
(/) M 1800
PabsorbedW
7400
MDC E1101 26 JULY 1974
220 MHz s •
O
^_ I . .—I 1
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910 MHz
■»->
o
S B
,
M U
i
- ■ i
..
m " IB '
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3.0 GHz
P , . .(mW) absorbedx
5.6 GHz
o ,,
■
;
-•
1, . l ... ._
43 Pabsorbed(mW)
AffCOOMW«.«. OOUOLAm ASTtfOM/HJTICS COM^AMV • MMMT
mm mmu ..
mum«' ' "■'"■'"■■w11- ' ■' " J
INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT. OUTPUT HIGH
4011 220 Ml
"v) ■»->
0 ■, mm-
•^• >
.: .'.. I 1
I/)
4J
in
4 I
absorbed (mW)
910 MHz
«1 ciei» ■ MB-
absorbed (ITW)
3.0 GHz
:
•
-I—r—1 P . . .(mW)
absorbedv '
5.6 GHz
absorbed (mW)
44
7400
MDC E1101 26 JULY 1974
220 MHz
CO +J
'S
to 4J
O
10 4J
.^c ^^^. , j m»*~-
absorbed (mW)
910 MHz
I»"1 It* 1» ' IB '
absorbed (mW)
3.0 GHz
!■ * I.
absorbed (mW)
5.6 GHz
Pabsorted(mW)
lUCOOHNrLL DOC/OLAS ASTWOMAI/TVCS COIHfAHIV > mamT
'mmmmmmmm^mmmim^^
INTEGRATED CIRCUIT SUSCEPTIBILITY 4011/7400 INTERFERENCE DATA COMPARISON
RF INJECTED INTO INPUT, OUTPUT LOW
1 4011 220 MHz
CO
0 IH ■»
y 4 !■■■■ E
g,...
a! '"t a
CQ
Q IN.mmm
y
o
i 00
i ■ IP-'
^^ « ■■•
■ < u. ■■_••• z »—t
"«■
< ^r I ■T^^, -I . 1 5 L-' I.» !■ ' I« ' .1
^ P f absorbedv rrW]
S 910 MHz -o
oe.
u ^ ....
■
"al )sorbed (mW)
3.0 GHz
absorbed (mW)
5.6 GHz
%^Hfc%| BWmBHI MNRMK
absorbed (mW)
7400
M0C E1101 26 JULY 1974
220 MHz CQ T3
QC o
<
2 GO
-
% ^
*» *^
K- "^•Sfc
^^ "^ "■' .-' ■•• 1.' .«• li
Pabsorbed^
910 MHz
« 31
1*
1
QC O l- o s ;, ■V
V^MfeJ 1-
CO
■v V
%N».. 1—«
_l "I o
I.'
absorbed (mW)
CO ■o
OH : O
o
CQ i—i
<! o
—I 3.0 QHz
■ i- ^T^L
i
V*."*? KV«K«MM.
«
o
2 OS
IV. ^r^T^v
'absorbed(niW)
5.6 GHz
45 absorbed (triW)
MCOOMMmu. oouaLM» ASTitoMAUTica con*i**MV • a*mr
■
mmmm j. i i mMmmmmm^^mm^^mmmw^ ' HI i.i«up«yi||.
INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO INPUT, OUTPUT HIGH
7400 i on o t- o <
i QO I—*
3
4011 220 M
m.mmm "- —
CQ
e
2 CO
absorbed (mW)
910 MHz
CO T3
MDC E1101 26 JULY 1974
220 MHz
PabSorbed(mW)
ro 3.0 Gh
•o
>M.a»
p G s § 1—1
I CD « %%%% k**%%<(, w -I <
IP"' I«' !■' !•* 1
P absorbe(
m 5.6 6 Hz -o
O
| s o
■ .■■■
mumm
t s- oo Ull!'lMlttK*l U> U» JUl
'absorbed^ 46
O I« M I—
CO
^C "^ 1 •• • * ••
Pabsorbed(mW)
CQ ■a »
O 3H
910 MHz
CO rtvwtw«^-* .L_ j I
I • II' I
p absorbed
(mW)
CQ "O
oc o I— u
2 CQ
3.0 GHz
m^w^v .VM
I» ' M tl '
(mW)
CQ ■o
Qi O I- O
O 12 I—I
i < • O ia
absorbed
5.6 GHz
Pabsorbed(mW)
0
Ü
ntcooMivmLL oouat-A» Am-moMJtuTics coMfMMY > m/tmr
mmrmmm mmmm 11«
U
INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFEREMCF DATA COMPARISON RF INJECTED INTO OUTPUT. OUTPUT LOW
~ 7400
MDC E1101 26 JULY 1974
■o
QC
U [^ nail
2
5 x
ir"
4011 220 MHz
tx. o 1- o
IB ■■• 2 •—1 »—
■ -■■•
m mm»
?? CO 1—1 ^ «« "
P . . .(mW) absorbed
910 MHz
i»"' i» • i*
Pabsorbed^
Ä 3.0 GHz -O " "•
OC 1M.SBB o t .... B g .... 1 .... s CQ •>«««| •» ^ ",r-' i. ' i. ' i. ' '
absorbe 'OnW
m 5*t GHz *— K
^
z M
fc CO
—i . ...
Pabsorbed(nW)
47
CQ T3
OH O I-
3
220 MHz
co •a
o
CO
00 ■o
B o
2 CO »—(
CQ
O
pabsorbed(mW)
910 MHz
M n
r^Tiv^^^JÄ. -^
I. I. ' I. '
P K ^K -(mW) absorbsa
3.0 GHz 1 _ ... :.
<x> LHk.%^ -j
.
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y
o >«
i . 00
t-. _
-Vj ■ rVl VANV .vÄäfa - »
5.6 GHz
absorbed (mW)
nucooMMmLL oouoLJkm A»TmoM*uTica contrAMY - mMmr
„. i
^mimmmmmmmmmmmKKHfi»fß^'^^^mn m't[lm»',nm," ■' .«miwiijwwiiiwi «M
INTEGRATED CIRCUIT SUSCEPTIBILITY
4011/7400 INTERFERENCE DATA COMPARISON RF INJECTED INTO OUTPUT, OUTPUT HIGH
MDC E1101 26 JULY 1974
«
o u
o I—I 11.■■»
i • i .
«
s
CQ
O
CQ ■o
o
2 CQ
CQ ■o
Q£ O I— O <
!■"'
2 ■■ I . CO i—< 3 ,,
4011 220 MHz
.■ •
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910 MHz
V.flM * •%• 4k< »« •
absorbed (mW)
3.0 GHz
■ .■■« : . »••«
absorbed (mW)
5.6 GHz
RPI*
Pabsorbed(niW)
48
CQ T3
Q
O
7400 220 MHz
»T
o <>
CQ
-aw*-" •». t
5t absorbed (mW)
CQ X) »
910 MHz
CO
^vJ ^vw« ̂ -Ä %-^ ••i
***•■ ^
P absorbed (mW)
CQ
11
■
■
-"3.0
cd O 1- ■ — --
< . u.
o l-H
^««•1. 2 v \ %, ̂ x** >Ä5Ä CO -•«.»■«. % "t ■!■»
< o Pabsorbe'."nW^
CQ ■o
CXI p
5.6 GHz
o i« -r^jc
CQ
*%«lf **
> jpgC fi^f •." " -Al WkVKVS ?vWÄt
Pabsorbed(mW)
AffCOOMMCC«. OOC/OLA« AmT990HAUT§cm OOAfRA/VK - CASI
_.. ... —..^^. . —^....^
»mmm '^m^mmmm^^im^minmm
INTEGRATED CIRCUIT SUSCEPTIBILITY
MDC E1101 26 JULY 1974
u DISTRIBUTION
Executive Office of the President Office of Teleconmunications Policy Washington, D. C. 20504
ODDR&E Assistant Director (E&PS) Attn: Dr. George H. Heilmeier Pentagon, Room 3D1079 Washington, D. C. 20301
Director, Defense Nuclear Agency Attn: RAEV (Maj. W. Adams) Washington, D. C. 20305
Chief of Naval Operations Attn: OP-932
0P-932C Washington, D. C. 20350
Chief of Naval Material Attn: MAT-03423 (Lt. R. Birchfield)
PM7T Washington, Q. C. 20360
Headquarters, U. S. Air Force (RDPE) Attn: Lt. Col. A. J. Bills The Pentagon, Room 4D267 Washington, D. C. 20330
Commanding General, U. S. Army Electronics Command Attn: AMSEL-TL-I (R. A. Gerhold)
NL-C (J. O'Neil) Ft. Monmouth, New Jersey 07703
Commander, Naval Air Systems Command Attn: AIR-360G (A. D. Klein) Washington, D. C. 20360
Commander, Naval Electronic Systems Cornnand Attn: NAVELEX-095
NAVELEX-3041 (J. A. Cauffman) NAVELEX-3044 (Navy Member: Advisory Group on Electron Devices,
Working Group on Low Power Devices) NAVELEX-3108 (D. G. Sweet) NAVELEX-5032 (C. W. Neill)
Washington, D. C. 20360
Commander, Naval Sea Systems Command Attn: SEA-034
SEA-0341 SEA-06G
Washington, D. C. 20360
Mcoowwcf-i. oouat-Mm amrmoMAUTic» COMMA/VV - KMmr
J
■LIWUIMHJIII .OT.W...M.. . i i . i. ll!HI|H|«ni«||||pMiV^^<imiH^-MmnMmP^«PHMIMR|i^«aW
1 :
INTEGRATED CIRCUIT SUSCEPTIBILITY MDC E1101
26 JULY 1974
Conmander, Rome Air Development Center Attn: RB (J. Scherer)
RBC1 (J. Smith) RBCT (H. Hewitt)
GriffIss Air Force Base New York 13440
Commander, Air Force Avionics Laboratory Attn: AFHL/TEA (H. H. Steenbergen) Wright-Patterson A.F.B., Ohio 45433
Director, Avionics Engineering Attn: EA (C. Seth) Wright-Patterson A.F.B. Dayton, Ohio 45433
Commander, Kirtland Air Force Base Attn: AFWL/DYX (Dr. D. C. Wunsch) New Mexico 87117
Commanding Officer, Harry Diamond Laboratory Attn: J. Sweton
W. L. Vault H. Dropkin
Washington, D. C. 20438
Conmander, Naval Electronics Laboratory Center Attn: Code 4800 (Dr. D. W. McQuitty)
(A. R. Hart) San Diego, California 92152
Commander, Naval Ordnance Laboratory Attn: Code 431 (Dr. M. Petree)
(Dr. J. Malloy) (R. Haislmaier)
White Oak Silver Springs, Maryland 20910
Commander, Naval Weapons Center Attn: Code 5531 (D. Cobb)
Code 5535 (H. R. Blecha) China Lake, California 93555
Reliability Analysis Center Rome Air Development Center Attn: RBRAC (I. Krulac) Griffiss Air Force Base, New York 13441
Commanding Officer, Electromagnetic Compatibility Analysis Center (ECAC)
Attn: CDR Case J. Atkinson
North Severn Annapolis, Maryland 21402
50
O
AffCOOWAWL«. uncm coMMAwv- mjkmr
— - in hM niimitlTii - ^..
KIWWWWWWWPWÜ mmmm ii i ..juMavHppiui
I *■
o
INTEGRATED CIRCUIT SUSCEPTIBILITY
Department of the Navy Attn: Code 7624 (J. Ramsey) Naval Ammunition Depot Crane, Indiana 47522
Commander, Naval Electronics Systems Test and Evaluation Facility
Attn: M. Gullberg Webster Field St. Intgoes, Maryland 20684
Naval Post Graduate School Attn: Code AB (Dr. R. Adler) Monterey, California 93940
National Bureau of Standards Attn: J. French
H. Schafft Washington, D. C. 20234
Dr. James Whalen, Room 2B 4232 Ridge Lea Road State University of New York at Buffalo Amherst, New York 14226
The Rand Corporation Attn: A. L. Hiebert 1700 Main St. Santa Monica, California 90406
Fairchild Research and Development Attn: Dr. J. M. Early M/S 30-0200 4001 Miranda Ave. Palo Alto, California 94303
RCA Laboratories Director, Solid State Technology Center Attn: Dr. G. B. Herzog Princeton, New Jersey 08540
Mr. J. S. Kilby 5924 Royal Lane Suite 150 Dallas, Texas 75230
Dr. Gordon E. Moore, V.P. Intel Corp. 3065 Bowers Road Santa Clara. California 95051
51
M0C E1101 26 JULY 1974
IMCOOMM«.!. OOVOI-A« *STOTOAMt/TVO* COMMAWV M«r
,.w . ^.^.^ ^^..■. ■^■.^ . .^ ■^■.■J^._. _. „^
-~**mmmm-' > iiii,m.u_in..wmimiii.jn.ini^**m*^mmm^**<wuww M IIIHWISIIIIHJ i iiiimmm^m
1 MDC E1I01
INTEGRATED CIRCUIT SUSCEPTIBILITY 26 JULY 1974
Bell Telephone Laboratories Attn: Dr. G. E. Smith Unipolar Design Department 600 Mountain Avenue Murray Hill, New Jersey 07974
Automation Industries Vitro Laboratories Division Attn: T. H. Miller 14000 Georgia Ave. Silver Springs, Maryland 20910
Braddock, Dunn, and McDonald, Inc. Attn: J. Schwartz First National Bank-East (17th Floor) Albuquerque, New Mexico 87108
R&D Associates Attn: Dr. W. Graham P. 0. Box 3480 Santa Monica, California 90406
Illinois Institute of Technology Research Institute Attn: Dr. Weber 10 West 35th St. Chicago, Illinois 60616 o Research Triangle Institute Attn: Dr. M. Simons
Dr. Burger Research Triangle Park, North Carolina 27709
Defense Documentation Center Cameron Station Alexandria, Virginia 22314
Secretariat, Advisory Group on Electron Devices Attn: W. Kramer, Working Group B 201 Varick St. New York, New York 10014
52
iwinHiiiii 111114.1 ^mmmmimmr ^mmmmm***^^** wmm*m*»w\. MI I. I \mmm^*mmmm
Ü INTEGRATED CIRCUIT SUSCEPTIBILITY
LOCAL DISTRIBUTION
C
D
HOC E1101 26 JULY 1974
□
EPA/Hooker
F
FC
FE
F6
FV
FVE
FVN
FVR
G
GB
GBP
GBR
MIL
MIM
AffCOOWM«
53
tt OOISOLA« MmrmoMJumcm COH****IV
-^»^^^--^--^-.^ .w.-..-.'. ,. ■ ii^Miii^rM