dtsx ao 1 axis deflector - · pdf filerelative efficiency behaviour versus scan angle relative...
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DTSXAO 1 axis DEFLECTOR
•Circularaperture• Linearpolar• Largescanangle
High resolution deflector from 350 to 1600 nm lasers
Thesedeflectorsofferatypicalresolutionof250to400dotswitharoundinputlaserbeamfrom4.2upto6.7mm(1/e²).Mainadvantageisthelargescananglewhichcanreachupto3degreesinthevisiblerange.Withanadaptedfrequencydriver,userwillbeabletooperatethisdeviceasavariablefrequencyshifter.
Specifications
DTSX-250 DTSX-400
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range Designedforasinglewavelengthonrequestin[350-1600nm]Standard:442,458,478,488,532,633,670,780,820,1064nm
Transmission >95%(broadbandcoating)
Optical Input / Output polarizations Linear//-1storderflipped
Aperture 4.5x4.5mm²(Beamdiameter4.2mm)7.5x7.5mm²(Beamdiameter6.7mm)
Carrier frequency / Frequency shift Wavelengthdependent
Frequency range 50MHz@VIS30MHz@1064nm
Scan angle 41mrd@532nm49mrd@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >70%acrossfrequencyrange
Access time 6.5μs(beamdia4.2mm) 10.3μs(beamdia6.7mm)
Resolution (N) 250@532nm,150@1064nm
400@532nm,240@1064nm
Static extinction ratio >2000/1
Max optical power density Nom5W/mm²@532nm
Input impedance Nom50Ω
V.S.W.R. Nom<2/1
RF Power ≤1Watt@532nm,≤2Watts@1064nm
Connector SMA
Size / Weight (Lxlxh)48.5x27.6x20.8mm3/60g
Operating Temperature 10to40°C
RFpower/PmaxFmin+xx(MHz)
Relativeefficiencybehaviourversusscanangle RelativeDiffractionEfficiencyvsRFPower
Separationangle(Dq)iswavelength(l)sensitive: RFpower(P)iswavelength(l)sensitive:
DTSX-250-1064250:Aperture/resolution(250or400)1064=Wavelength(nm)
Outline Drawing sizesinmm
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DTSXYAO 2 axis DEFLECTOR
•Circularaperture• Linearpolar• Largescanangle
High resolution deflector from 350 to 1600 nm lasers
Thesedeflectorsoffera typical total resolutionof160000dots (2axis)witharound input laserbeamupto6.7mm(1/e²).Mainadvantage is the largescananglewhichcanreachupto3x3degreesinthevisiblerange.Withanadaptedfrequencydriver,userwillbeabletooperatethisdeviceasaoneaxisdeflectorwithfrequencyshiftcancellation.
Specifications
DTSXY-250 DTSXY-400
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range Designedforasinglewavelengthonrequestin[350-1600nm]Standard:442,458,478,488,532,633,670,780,820,1064nm
Transmission >95%peraxis(broadbandcoating)
Optical Input / Output polarizations Linear┴-1stworkingorderLinear┴
Aperture 4.5x4.5mm²(Beamdiameter4.2mm)
7.5x7.5mm²(Beamdiameter6.7mm)
Carrier frequency / Frequency shift Wavelengthdependent
Frequency range 50MHz@VIS 30MHz@1064nm
Scan angle 41x41mrd²@532nm49x49mrd²@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >50%acrossfrequencyrange(2axis)
Access time 6.5μs(beamdia4.2mm) 10.3μs(beamdia6.7mm)
Resolution (N) 250x250@532nm150x150@1064nm
400x400@532nm240x240@1064nm
Static extinction ratio >2000/1
Max optical power density Nom5W/mm²@532nm
Input impedance Nom50Ω
V.S.W.R. Nom<2/1
RF Power ≤1Watt@532nm,≤2Watts@1064nm(peraxis)
Connector SMA
Size / Weight (Lxlxh)
Operating Temperature 10to40°C
%
Relativeefficiencybehaviourversusscanangle RelativeDiffractionEfficiencyvsRFPower
Fmin+xx(MHz) RFpower/Pmax
Separationangle(Dq)iswavelength(l)sensitive: RFpower(P)iswavelength(l)sensitive:
DTSX-250-1064250:Aperture/resolution(250or400)1064=Wavelength(nm)
Outline Drawing sizesinmm
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MCQ40-A2.5-1064AO ModulatorHigh resolution deflector from 350 to 1600 nm lasers
AOModulatorfor1064nmlasersLargeaperture–AircoolingHighDamagethreshold
Specifications
Material CrystalQUARTZ
Acoustic Velocity V=5740m/s(L)
Optical Wavelength range 1064nm
Transmission >99.5%withhardV-coating
Optical Input / Output polarizations Linear┴
Aperture 2.5x2.5mm²
Carrier frequency / Frequency shift 40.68MHz(otheronrequest)
Operating mode Bragg
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >80%Nom85%(1storder)
Rise/Fall time 115ns/mm
Max optical peak power density >500MW/cm²
Separation angle (0-1) 7.54mrd
Input impedance Nom50Ω
V.S.W.R. Nom<1.2/1
RF Power Nom20Watts
RF Connector BNC
Thermal security switch ShortCircuit=Enable;OpenCircuitDisable
Heat exchange Conductionthroughbaseplate
Optical path length 42mm
Size / Weight (Lxlxh)52.2x62x33.8mm3/50g
Operating Temperature 10to40°C
MCQ40-A2.5-1064XX=carrierfrequency40.68(Otheronrequest)Y=(aperture,mm)=2.5mm(otheronrequest)
Outline Drawing sizesinmm
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MCQ110 VISAO Modulator/ShifterHigh power 532 nm modulator, air cooling
AOModulatorfor1064nmlasersLargeaperture–AircoolingHighDamagethreshold
Specifications
ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethe laserbeamwithoutadditionaloptics.TheycovertheVISrangeupto650nm.SuitableforDPSS532nmorAR+lasers.
Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.
MQC110-A2-VIS
Material-Acoustic mode Quartz
Acoustic Velocity V=5740m/s
Optical Wavelength range 458-650nm
Transmission >95%
Optical Input / Output polarizations Linear┴Aperture 2x2mm²
Carrier frequency / Frequency shift 110MHz
Separation angle 10.2mrd@532nm(Scan angle over 30 MHz: 2.8 mrd @532nm)
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
>85%@532nm,@1.5mmbeamdia(≥ 70% over 30 MHz)
Rise time 115ns/mm(min 50 ns – min beam diameter 0.5 mm)
Amplitude modulation bandwidth >8MHz(-3dB)
Static extinction ratio >1000/1
Max optical power density >100W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power Typ5Watts
Connector SMA
Heat Exchange Conductionthroughbaseplate
Size / Weight (Lxlxh)
Operating Temperature 10to40°C
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MG40AO Modulator/ShifterGe modulator for 9.3 μm and 10.6 μm lasers
•10.6and9.3μmstandarddesigns•Watercooling•Upto200Watts
Thesemodulatorshavebeenspeciallydesigned for far infraredrangeoperation from3μmto11μm.Astandarddesignfor10.6μmisproposed.
Theycanalsobeusedas fixed frequencyshifters@40Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto40+/-2.5MHz.
MG40-Ax-10600 MG40-Ax-9300
Material-Acoustic mode Germanium
Acoustic Velocity V=5500m/s
Optical Wavelength range 10.6μm 9.3-9.4μm
Transmission Nom>90%
Optical Input / Output polarizations Linear//
Aperture 6x10mm²or8x10mm²
Carrier frequency / Frequency shift 40MHz
Separation angle 77mrd67.6mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 80%
Rise time 120ns/mm
Amplitude modulation bandwidth >800KHz(-3dB,@5mm)
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power Nom50Watts Nom40Watts
Connector BNC
Size / Weight (Lxlxh)71.5x63.4x39.5mm3/250g
Heat exchange Watercooling(typ250ml/min)
Thermal security sensor Securitycu-offforovertemperature
Water connectors
Operating Temperature 10to40°C
Specifications
RFpower/Pmax
RelativeDiffractionEfficiencyvsRFPower
MG40-Ax-10600X(aperture,mm)=6or810600=wavelength(nm:10600or9300)
Outline Drawing sizesinmm
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MG40AO Modulator/ShifterGe modulator for 2.6-3.5 μm lasers
•10.6and9.3μmstandarddesigns•Watercooling•Upto200Watts
Thesemodulatorshavebeenspecially designed for far infrared rangeoperationfrom2.6μmto3.5μm.
Theycanalsobeusedasfixedfrequencyshifters@40MHz.
Specifications
MG40-A3-2.6-3.5μm
Material-Acoustic mode Germanium
Acoustic Velocity V=5500m/s
Optical Wavelength range 2.6-3.5μm
Transmission Nom>95%
Optical Input / Output polarizations Linear//
Aperture 3x3mm²
Carrier frequency / Frequency shift 40MHz
Separation angle 19mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%
Rise time 120ns/mm
Amplitude modulation bandwidth >3MHz
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power Nom4Watts
Connector BNC
Size / Weight (Lxlxh)71.5x63.4x39.5mm3/250g
Heat exchange Watercooling(typ250ml/min)
Thermal security sensor Securitycut-offforovertemperature
Water connectors
Operating Temperature 10to40°C
MG40-AxX(aperture,mm)=6or8
Outline Drawing sizesinmm
RFpower/Pmax
RelativeDiffractionEfficiencyvsRFPower
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ40High power AOMWater cooled AOM for 1540-1570 nm lasers•1.56μmdesign•LinearPolarization•Watercooling•Highefficiency
ThisAOModulator isawatercooledAOMtobeusedwithhighpower linearlypolarized lasers1560nm.Thehighqualitygradefusedsilicacombinedwithahigh topsurface finishingandhardcoatingwith lowreflectivity, togetherwithauniqueand innovative lowstressdesign,offer low insertion lossesandahighdamagethreshold.
Specifications
MQ40
Material FusedsilicaLongitudinal
Acoustic Velocity V=5960m/s(L)
Optical Wavelength range 1540-1570nm
Transmission >99.5%withhardV-coating
Optical Input / Output polarizations Linear┴Aperture 2x2mm²
Carrier frequency / Frequency shift 40.68MHz
Operating mode Bragg
Separation angle (orders 0-1) 10.6mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
>80%(typ85%)@PRF40W>75%(typ80%)@PRF30W
Rise/Fall time 110ns/mm(L)
Max optical peak power density >500MW/cm²
Input impedance Nom50W
V.S.W.R. Nom<1.2/1
RF Power <40Ω
RF Connector SMA
Thermal Security Interlock / Connector SMC
Heat exchange Watercooling–Nom250ml/min@20°C
Water Chamber Standard=AluminiumOption=StainlessSteel
Optical path length 46mm
Size / Weight (Lxlxh)52.2x62x37.5mm3/350g
Operating Temperature 10to40°C
MQ40-A2-L1560-WScY=(aperture,mm)=2
Outline Drawing Sizesinmm
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MQ80-A0.7-L1030.1064-Z20-WLgAO High power ModulatorHigh power 1030-1064 nm modulator
•1030–1064nmdesign•LinearPolarization•HighPower•Watercooling•Highefficiency
Madeof fusedsilica for linearlypolarized lasers, thehardcoatingwith lowreflectivityandhighqualitymaterialassuresahighdamagethreshold>500MW/cm².
Specifications
Material-Acoustic mode Fusedsilica
Acoustic Velocity V=5960m/s
Optical Wavelength range 1030–1064nm
Transmission >99.5%withhardV-coating
Optical Input / Output polarizations Linear┴
Aperture 0.7x1mm²
Carrier frequency / Frequency shift 80MHz
Operating mod Bragg
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >80%
Rise time 110ns/mm(min10ns)
Max optical power density >500MW/cm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.2/1
RF Power Nom15Watts
Connector SMA
Heat Exchange WaterCooling
Water Chamber Standard=AluminiumOption=StainlessSteel
Optical path length 20mm
Size / Weight (Lxlxh)75x38.8x25.8mm3
Operating Temperature 10to40°C
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ110 VISAO Modulator/ShifterHigh power 532 nm modulator
•Highpower•LinearPolar•Largeaperture
Thesemodulatorshavebeenspeciallydesigned forapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.Theycover theVISrangeupto650nm.SuitableforDPSS532nmorAR+lasers.
Theycanalsobeusedasfixedfrequencyshifters@110MHz,aswellasvariablefrequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.
MQ110-A1.5-VIS-WLg
Material-Acoustic mode Fusedsilica
Acoustic Velocity V=5960m/s
Optical Wavelength range 458-650nm
Transmission >95%
Optical Input / Output polarizations Linear┴Aperture 1.5x1.5mm²
Carrier frequency / Frequency shift 110MHz
Separation angle Typ9.8mrd(Scanangleover30MHz:2.6mrd@532nm)
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
Nom90%@532nm,@1mmbeamdia(≥70%over30MHz)
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >4MHz(-3dB,@1mm)
Static extinction ratio >1000/1
Max optical power density >100W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power Typ7.5Watts
Connector SMA
Heat Exchange ConductionthroughbaseplateorWaterCooling
Size / Weight (Lxlxh)75x38.8x25.8mm3
Operating Temperature 10to40°C
Specifications
OPTIONSFrequencyrange110+/-15MHzNominalefficiencyover110+/-15MHz>70%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ110-A1-UV-HkAO Modulator/ShifterHigh power 355 nm modulator
•Highpower•LinearPolarization
ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.TheycovertheUVrangeuptoVisiblerange.SuitableforDPSS355nmorUVAR+lasers.
Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.
Specifications
Material-Acoustic mode FusedsilicaUVgrade
Acoustic Velocity V=5960m/s
Optical Wavelength range 325-442nm
Transmission >95%
Optical Input / Output polarizations Linear┴
Aperture 1x1mm²
Carrier frequency / Frequency shift 110MHz
Separation angle >6mrd(Scanangleover30MHz:1.8mrd@355nm)
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@355nm,@0.7mmbeamdia
Rise time 110ns/mm(min30ns)
Amplitude modulation bandwidth >6MHz(-3dB,@0.7mm)
Static extinction ratio >1000/1
Max optical power density >10W/mm²@355nm
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power Nom3Watts
Connector SMA
Size / Weight (Lxlxh)
Operating Temperature 10to40°C
OPTIONSFrequencyrange110+/-15MHzNominalefficiencyover110+/-15MHz>70%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ110AO Modulator/ShifterHigh power 355 nm modulator
•Highpower•LinearPolar•Largeaperture
ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsuser tocombinethe laserbeamwithoutadditionaloptics.Theycover theUVrangeuptoVisiblerange.SuitableforDPSS355nmorUVAR+lasers.
Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.
Specifications
Material-Acoustic mode FusedsilicaUVgrade
Acoustic Velocity V=5960m/s
Optical Wavelength range 325-442nm
Transmission >95%
Optical Input / Output polarizations Linear┴
Aperture 3x3mm²
Carrier frequency / Frequency shift 110MHz
Separation angle >6mrd(Scanangleover30MHz:1.8mrd@355nm)
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
Nom90%@355nm,@1mmbeamdia(≥75%over30MHz)70%@355nm,@250μmbeamdia
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >4MHz(-3dB,@1mm)
Static extinction ratio >1000/1
Max optical power density >10W/mm²@355nm
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <4Watts
Connector SMA
Size / Weight (Lxlxh)57x60x52.9mm3/250g
Operating Temperature 10to40°C
OPTIONSAperture:1x1,1.5x1.5,2x2mm²Frequencyrange110+/-15MHzNominalefficiencyover80+/-15MHz>70%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ180AO Modulator/ShifterHigh power modulator
•Highspeed•Highpower•LinearPolar
Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.TheycoverthedeepUVrangeuptoVisiblerange.SuitableforDPSS355nmor532nm.
Theycanalsobeusedas fixed frequencyshifters@180Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto180+/-25MHz.
Specifications
MQ180-A0,2-UV MQ180-A0,2-VIS
Material-Acoustic mode Fusedsilica
Acoustic Velocity V=5960m/s
Optical Wavelength range 325-442nm 440-670nm
Transmission >95%
Optical Input / Output polarizations Linear┴
Aperture 0.2x1mm²
Carrier frequency / Frequency shift 180MHz
Separation angle >9mrd >13mrd
Diffraction efficiency (with focussed TEM00 beam 90 μm, M² ≤ 1.1) ≥80% ≥70%
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >48MHz(-3dB,@90μm)
Static extinction ratio >1000/1
Max optical power density >100W/mm²@VIS
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤2Watts ≤4Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
OPTIONSFrequencyrange180+/-30MHzNominalefficiencyover180+/-30MHz>60%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ180AO Modulator/ShifterHigh power modulator
•Highspeed•Highpower•LinearPolar
Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.TheycoverthedeepUVrangeuptoVisiblerange.SuitableforDPSS355nmor532nm.
Theycanalsobeusedas fixed frequencyshifters@180Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto180+/-25MHz.
Specifications
MQ180-A0,7-1030 nm
Material-Acoustic mode Fusedsilica
Acoustic Velocity V=5960m/s
Optical Wavelength range 1030nm
Transmission >99.5%
Optical Input / Output polarizations Linear┴
Aperture 0.7x1mm²
Carrier frequency / Frequency shift 180MHz
Separation angle >31.1mrd
Diffraction efficiency (with focussed TEM00 beam 90 μm, M² ≤1.1)
>20%,RFpower4watts>30%,RFpower6watts>60%,RFpower15watts
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >10MHz
Static extinction ratio >1000/1
Max optical peak power density >500MW/cm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
OPTIONSFrequencyrange180+/-30MHzNominalefficiencyover180+/-30MHz>60%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ180-A1.5-244.266-BrAO Modulator/ShifterHigh power 244-266 nm modulator
•Highpower•LinearPolar•Largeaperture
ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.TheirBrewsterdesignallowshightransmissionin244to266nmrange.
Theycanalsobeusedasfixedfrequencyshifters@180MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto180+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Material-Acoustic mode FusedsilicaUVgrade
Acoustic Velocity V=5960m/s
Optical Wavelength range 244-266nm
Transmission Brewsterincidence
Optical Input / Output polarizations Linearparalleltobaseplate
Aperture 1.5x2mm²
Carrier frequency / Frequency shift 180MHz
Separation angle >7mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@266nm
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >4MHz(-3dB,@1mm)
Static extinction ratio >1000/1
Max optical power density >10W/mm²@266nm
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <4Watts
Connector SMA
Size / Weight (Lxlxh)
Operating Temperature 10to40°C
Specifications OPTIONSFrequencyrange180+/-15MHzNominalefficiencyover180+/-15MHz>70%
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MQ200-A1.5-266-BrAO Modulator/ShifterHigh power 244-266 nm modulator
•Highpower•LinearPolar•Largeaperture
ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.TheirBrewsterdesignallowshightransmissionin244to266nmrange.
Theycanalsobeusedasfixedfrequencyshifters@200MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto200+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
Material-Acoustic mode FusedsilicaUVgrade
Acoustic Velocity V=5960m/s
Optical Wavelength range 244-266nm
Transmission Brewsterincidence
Optical Input / Output polarizations Linearparalleltobaseplate
Aperture 1.5x2mm²
Carrier frequency / Frequency shift 200MHz
Separation angle >8mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@266nm
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth >4MHz(-3dB,@1mm)
Static extinction ratio >1000/1
Max optical power density >10W/mm²@266nm
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <4Watts
Connector SMA
Size / Weight (Lxlxh)
Operating Temperature 10to40°C
OPTIONSFrequencyrange180+/-15MHzNominalefficiencyover180+/-15MHz>70%
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
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MQ240AO Modulator/ShifterHigh power 244-266 nm modulator
•Highpower•LinearPolar•Largeaperture
Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.
Theycanalsobeusedasfixedfrequencyshifters@240MHz,aswellasvariablefrequencyshiftersordeflectorswithafrequencyrangeupto240+/-40MHz.
Specifications
Material-Acoustic mode Fusedsilica
Acoustic Velocity V=5960m/s
Optical Wavelength range UV:325-425nm
Transmission >95%
Optical Input / Output polarizations Linear┴
Aperture 0.2x1mm²
Carrier frequency / Frequency shift 240MHz
Separation angle >13mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) UV:≥80%
1st order ellipticity Nom85%@90μmbeamdia
Rise time 110ns/mm(min10ns)
Amplitude modulation bandwidth 48MHz(-3dB,@90μm)
Static extinction ratio >2000/1
Max optical power density >10W/mm²
Input impedance Nom50W
V.S.W.R. Nom<1.5/1
RF Power UV:≤2Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
OPTIONSFrequencyrange240+/-40MHzNominalefficiencyover240+/-40MHz>60%
Outline Drawing sizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MT65-B20A1.5-1064-4x-002AO Modulator – 4 channelsMCM technology modulator for 1064 nm lasers
•1064m•Linear/RandomPolar•4channels
Thesemodulatorshavebeenspeciallydesignedfor1064nmoperation.Theycanalsobeusedaslowresolutiondeflectorswithafrequencyrangeupto20MHz.Their4channelsdesignsallowusertoworkwithupto4parallelbeams.
Specifications
Material-Acoustic mode TeO2[L]
Number of channels 4
Acoustic Velocity V=4200m/s
Optical Wavelength range 1064nm
Transmission 98%@1064nm
Optical Input / Output polarizations Linear
Aperture 1.5x1.5mm²
Centre to Centre Channels spacing 4mm
Carrier frequency / Frequency shift 65+/-10MHz
Separation angle >13.9mrd
Scan angle 5mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%@Fc,≥70%overfrequencyrange
Rise time 160ns/mm
Amplitude modulation bandwidth >3MHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density >10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power nom2Wattsperchannel
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
OPTION Version532nm
Outline Drawing (sizesinmm)
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MT65-B20A2-1064-2xAO Modulator – 2 channelsMulti-channels modulator for 1064 nm lasers
•1064m•Linear/RandomPolar•4channels
Thesemodulatorshavebeenspeciallydesigned for1064nmoperation.Theycanalsobeusedas lowresolutiondeflectorswithafrequencyrangeupto20MHz.Their4channelsdesignsallowusertoworkwithupto4parallelbeams.
Specifications
Material-Acoustic mode TeO2[L]
Number of channels 2
Acoustic Velocity V=4200m/s
Optical Wavelength range 1064nm
Transmission 98%@1064nm
Optical Input / Output polarizations Linear
Aperture 2x2mm²
Centre to Centre Channels spacing 4mm
Carrier frequency / Frequency shift 65+/-10MHz
Separation angle >13.9mrd
Scan angle 5mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%@Fc,≥70%overfrequencyrange
Rise time 160ns/mm
Amplitude modulation bandwidth >3MHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density >10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power nom2.2Wattsperchannel
RF Connectors / Size / Weight SMA/(Lxlxh)50.9x22.4x15.8mm3/50g
Heat Exchange Watercooling
Operating Temperature 10to40°C
OPTION Version532nmOtherapertures,Otherchannelspacing
Outline Drawing (sizesinmm)
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MT80AO Modulator/ShifterMulti-channels modulator for 1064 nm lasers
•Widespectralrange•LinearorrandomPolar
Thesemodulatorshavebeenspeciallydesigned forgeneralpurpose lowspeedapplications.TheyareproposedwithvariouswavelengthrangesorwithV-coating.
Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm
Transmission VIS/IR:>95%1064nm:98%@1064nm
Optical Input / Output polarizations Linear
Aperture 1x2mm²or1.5x2mm²
Carrier frequency / Frequency shift 80MHz
Separation angle [email protected]@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%
Rise time 160ns/mm(min24ns)
Amplitude modulation bandwidth >20MHz(-3dB,@150μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²@532nm,IR:>10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power VIS:≤1WattsIR/1064nm:≤2Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
OPTION Frequencyrange80+/-15MHzNominalefficiencyover80+/-15MHz>70%
MT80-Ax-zzX(aperture,mm)=1or1.5Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm
Outline Drawing (sizesinmm)
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
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MT80AO Modulator/ShifterTeO2 modulator for 1300 to 1600 nm lasers
•1300-1600nmspectralrange•LinearorrandomPolar
Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-21MHz.
Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.
Specifications
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 1300–1600nm
Transmission >95%
Optical Input / Output polarizations Linear┴
Aperture 0.7x3mm²
Carrier frequency / Frequency shift 80MHz
Separation angle 29.5mrd@1550nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >60%@80MHz>40%overfrequencyrange80+/-21MHz
Rise time 160ns/mm(min24ns)
Amplitude modulation bandwidth >20MHz(-3dB,@150μm)
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤2.2Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange80+/-21MHzNominalefficiencyover80+/-21MHz>40%
MT80-Ax-zzX(aperture,mm)=0.7Y=frequencyrange(MHz)ifanyZZ=1300-1600(nm)
Outline Drawing (sizesinmm)
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MT80-BDO
AO Modulator/ShifterTeO2 modulator for 980-1100 nm lasers
•Widespectralrange•LinearorrandomPolar•BeamDriftOptimization(BDO)
Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-15MHz.
Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.
Specifications
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 1064nm:980-1100nm
Transmission 1064nm:98%@1064nm
Optical Input / Output polarizations Linear
Aperture 1.5x2mm²
Carrier frequency / Frequency shift 80MHz
Separation angle 20.3mrd@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%
Rise time 160ns/mm(min24ns)
Amplitude modulation bandwidth >20MHz(-3dB,@150μm)
Static extinction ratio >2000/1
Max optical power density IR:>10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power 1064nm:≤2.2Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange80+/-15MHzNominalefficiencyover80+/-15MHz>70%
MT80-Ax-zzX(aperture,mm)=1.5Y=frequencyrange(MHz)ifanyZZ=1064nm
Outline Drawing (sizesinmm)
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MT110AO Modulator/ShifterTeO2 modulator for 450-1100 nm lasers
Thesemodulatorshavebeenspeciallydesignedforgeneralpurposeapplications.TheyareproposedwithvariouswavelengthrangesorwithV-coating.Theycanalsobeusedasfixedfrequencyshifters@110MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto110+/-25MHz.
Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.
Specifications
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm
Transmission VIS/IR:>95%1064nm:98%@1064nm
Optical Input / Output polarizations Linear
Aperture 1x2mm²or1.5x2mm²
Carrier frequency / Frequency shift 110MHz
Separation angle [email protected]@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%
Rise time 160ns/mm(min15ns)
Amplitude modulation bandwidth >32MHz(-3dB,@90μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²@532nm,IR:>10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power VIS:≤1WattsIR/1064nm:≤2Watts
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange110+/-25MHzNominalefficiencyover110+/-25MHz>70%HeatsinkoncrystalforIRA1.5version:option-Hk
MT110-Ax-zzX(aperture,mm)=1or1.5Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm
Outline Drawing (sizesinmm)
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MT110 & MDS1CAO ModulatorA powerfull modulator for Tunable Ti:Sa lasers With USB Digital driver
Thesemodulatorshavebeenspeciallydesignedfor tunableTi:Salasers.Inassociationwiththeir“tracking”driverMDS1C,theyallowtogetaconstanthighdiffractionefficiency,togetherwithaconstantoutputanglewhatever is the laserwavelengthbetween700and1060nm.ThecompleteadjustmentcanbeachievedthroughUSBorRS232control.
Specifications
MT110-B50A1,5-IR-Hk
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 700-1060nm
Transmission >95%
Optical Input / Output polarizations Linear
Aperture 1.5x2mm²
Carrier frequency / Frequency shift 110MHz+/-25MHz
Separation angle Nom23mrd
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom85%
Rise time 160ns/beamdiameter1mm
Amplitude modulation bandwidth 3MHz(-3dB)
Static extinction ratio >2000/1
Max optical power density >10W/mm²
Input impedance Nom50W
V.S.W.R. Nom<1.5/1
RF Power ≤2Watts
Connector SMA
Size / Weight (Lxlxh)60.1x28.7x26.5mm3/50g
Operating Temperature 10to40°C
Efficiencyversuswavelengthwithoutinputanglereadjustment
Frequencytrackingversuswavelength OutputAngleversuswavelength
RelativeDiffractionEfficiencyvsRFPower
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Associated RF driver MDS1C
TheMDS1Cdriver isbasedonDirectDigitalSynthesizers (DDS).Theyproducea tuneable,stableandaccurateRFfrequencysignalfortheTi:Samodulator.Itsdesignwith“ontheedge”technologyoffersuniqueperformanceintermofaccuracy, speed and stability, thanks to its internal temperature correction and high linearity design.ThebuiltinamplifierdeliversthenecessaryRFpowertodrivetheacousto-opticdevice,withreducedpowerconsumption(AA “COLD DESIGN”).Theadjustmentsofthedriver(Frequency&Power)canbedonewitharemotecontrol,USBorthroughRS232communicationtoallowuserflexibilityinpowercontrolorfrequencyscanning.
MDS1C-B6-33-85.135
Number of channels 1
Frequency range 85-135
Frequency stability +/-2ppm/°C
Frequency accuracy Nom1KHz
Frequency step Nom1KHz
Frequency control RemoteControlorUSB,Option:RS232
Power Supply OEMversion:24VDC-<0.7ALaboratoryversion:110/230VAC-50-60Hz
Rise Time / Fall time (10-90 %) <50ns
Modulation Input Control External :Analog0-5V/10KWorAnalog0-10V/10KWInternal:RemoteControlorUSB,Option:RS232
Extinction ratio Nom70dB
Output RF power 33dBm(2Watts)
Output Impedance 50Ω
V.S.W.R. Nom<1.5/1
Input / Output connectors DB25/SMA(DB9forRS232)
Size OEMversion:207x99x27.7mm3
Laboratoryversion:Rack19”,1U
Weight OEMversion:nom0.6kgLaboratoryversion:nom4kg
Heat exchange OEMversion:ConductionthroughbaseplateLaboratoryversion:standalone
Operating temperature 10to40°C
Maximum case temperature OEMversion:50°C
Specifications
Outline Drawing (sizesinmm)
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Outline Drawing (sizesinmm)
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MT220Fast AO Modulator/ShifterTeO2 modulator for 400-1100 nm lasersThesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.
Theycanalsobeusedasfixedfrequencyshifters@200Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to200+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
SpecificationsMaterial-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range
LVIS:400-442nmVIS:450-700nmIR:700-1100nm1064nm:980-1100nm
Transmission LVIS/VIS/IR:>95%1064nm:98%@1064nm
Optical Input / Output polarizations Linear
Aperture 0.5x2mm²(optionfor1064nm0.2x1mm²)
Carrier frequency / Frequency shift 200MHz
Separation angle [email protected]@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
LVIS:85%@300μm,75%@50μmVIS:85%@300μm,75%@50μmIR:85%@300μm,65%@50μm1064nm:70%@300μm,60%@100μm1064nm:80%@100μm,75%@64μm->@0.2x1mm²
Rise time 160ns/mm(min8ns)
Amplitude modulation bandwidth >60MHz(-3dB,@50μm)
Static extinction ratio >2000/1
Max optical power density LVIS:0.5W/mm²,VIS:5W/mm²,IR:>10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power LVIS/VIS:≤1.3WattsIR/1064nm:≤2.2Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange200+/-50MHzNominalefficiencyover200+/-50MHz>50%(VIS,@800nm)
MT110-Ax-zzX=0.5(aperture,mm)or0.2Y=frequencyrange(MHz)ifanyZZ=LVIS(400-442nm),VIS(450-700nm),IR(700-1100nm),@1064nm
Outline Drawing (sizesinmm)
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MT250Fast AO Modulator/ShifterTeO2 modulator for 450-1100 nm lasersThesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.Theycanalsobeusedasfixedfrequencyshifters@250Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to250+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
SpecificationsMaterial-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm
Transmission VIS/IR:>95%1064nm:98%@1064nm
Optical Input / Output polarizations Linear
Aperture 0.5x2mm²
Carrier frequency / Frequency shift 250MHz
Separation angle [email protected]@1064nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
VIS:85%@300μm,75%@50μmIR:85%@300μm,65%@50μm1064nm:70%@300μm,60%@100μm
Rise time 160ns/mm(min8ns)
Amplitude modulation bandwidth >60MHz(-3dB,@50μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²,IR:>10W/mm²
Input impedance Nom50W
V.S.W.R. Nom<1.5/1
RF Power VIS:≤1.3WattsIR/1064nm:≤2.2Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange250+/-50MHzNominalefficiencyover250+/-50MHz>50%(VIS,@800nm)
MT110-Ax-zzX=0.5(aperture,mm)or0.2Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm
Outline Drawing (sizesinmm)
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3786 -
www.toptical.com.tw 02-2346-1510 [email protected]
3796 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MT250Fast AO Modulator/ShifterTeO2 modulator for 700- 950 nm lasers
Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.
Theycanalsobeusedasfixedfrequencyshifters@250Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to250+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 800:700-950nm
Transmission >95%
Optical Input / Output polarizations Linear
Aperture 0.12x1mm²
Carrier frequency / Frequency shift 250MHz
Separation angle 47.6mrd@800nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 800:85%@90μm,75%@55μm
Rise time 160ns/mm
Amplitude modulation bandwidth >30MHz(-3dB,@90μm)
Static extinction ratio >2000/1
Max optical power density IR:>10W/mm²
Input impedance Nom50W
V.S.W.R. Nom<1.5/1
RF Power 800:≤2Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
•Highspeed•LinearorrandomPolar•Printing
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange250+/-50MHzNominalefficiencyover250+/-50MHz>50%(VIS,@800nm)
MT250-Ax-zzX=0.12(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)
Outline Drawing (sizesinmm)
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3806 -
www.toptical.com.tw 02-2346-1510 [email protected]
3816 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MT350Fast AO Modulator/ShifterTeO2 modulator for 450-700 nm lasers
Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioandlownoisearethekeyfactors.
Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to350+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
•Highspeed•LinearorrandomPolar•Printing
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range VIS:450-700nm
Transmission >95%
Optical Input / Output polarizations Linear
Aperture 0.12x2mm²(optionfor1064nm0.2x1mm²)
Carrier frequency / Frequency shift 350MHz
Separation angle 44.3mrd@532nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
80%@70μm,70%@30μm(Eliipticitynom80%@30μm)
Rise time 160ns/mm(min5ns)
Amplitude modulation bandwidth >96MHz(-3dB,@30μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤1.3Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%(VIS,@800nm)
MT250-Ax-zzX=0.12(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm)
Outline Drawing (sizesinmm)
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3826 -
www.toptical.com.tw 02-2346-1510 [email protected]
3836 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MT350Fast AO Modulator/ShifterTeO2 modulator for 700-950 nm lasers
Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioand lownoisearethekeyfactors.
Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeupto350+/-50MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
•Highspeed•LinearorrandomPolar•Printing
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 800:700-950nm
Transmission >95%
Optical Input / Output polarizations Linear
Aperture 0.2x1mm²
Carrier frequency / Frequency shift 350MHz
Separation angle 66.7mrd@800nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
80%@70μm,70%@30μm(Eliipticitynom80%@30μm)
Rise time 160ns/mm(min5ns)
Amplitude modulation bandwidth >96MHz(-3dB,@30μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤1.3Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%
MT350-Ax-zzX=0.2(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)
Outline Drawing (sizesinmm)
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3846 -
www.toptical.com.tw 02-2346-1510 [email protected]
3856 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MT350Fast AO Modulator/ShifterTeO2 modulator for 700-950 nm lasers
Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioand lownoisearethekeyfactors.
Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeupto350+/-50MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.
Specifications
•Highspeed•LinearorrandomPolar•Printing
Material-Acoustic mode TeO2[L]
Acoustic Velocity V=4200m/s
Optical Wavelength range 800:700-950nm
Transmission >95%
Optical Input / Output polarizations Linear
Aperture 0.12x2mm²
Carrier frequency / Frequency shift 350MHz
Separation angle 66.7mrd@800nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)
80%@70μm,70%@30μm(Eliipticitynom80%@30μm)
Rise time 160ns/mm(min5ns)
Amplitude modulation bandwidth >96MHz(-3dB,@30μm)
Static extinction ratio >2000/1
Max optical power density VIS:5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤1.3Watts
Connector SMA
Size / Weight (Lxlxh)47x33x17.8mm3/50g
Operating Temperature 10to40°C
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%
MT350-Ax-zzX=0.2(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)
Outline Drawing (sizesinmm)
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3866 -
www.toptical.com.tw 02-2346-1510 [email protected]
3876 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MTS40AO Modulator/ShifterTeO2-S modulator for 532-700 nm
Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.
Theycanalsobeusedasfixedfrequencyshifters@40MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto40+/-2MHz.
Specifications
•Largeaperture•LinearPolar•Highefficiency
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range 532-700nm
Transmission >95%,nom98%
Optical Input / Output polarizations Linear/Notspecified
Aperture 2x2mm²
Carrier frequency / Frequency shift 40MHz
Separation angle 39mrd@633nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%
Rise time 1μs/mm(min0.3μs)
Amplitude modulation bandwidth >400KHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <1Watt,nom100mW
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
MTS40-A2-VIS
Outline Drawingsizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3886 -
www.toptical.com.tw 02-2346-1510 [email protected]
3896 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MTS40AO Modulator/ShifterTeO2-S modulator for 532-700 nm
Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.
Theycanalsobeusedasfixedfrequencyshifters@40MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto40+/-2MHz.
Specifications
•Largeaperture•LinearPolar•Highefficiency
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range 532-700nm
Transmission >95%,nom98%
Optical Input / Output polarizations Linear/Notspecified
Aperture 2x2mm²
Carrier frequency / Frequency shift 40MHz
Separation angle 39mrd@633nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%
Rise time 1μs/mm(min0.3μs)
Amplitude modulation bandwidth >400KHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <1Watt,nom100mW
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
MTS40-A2-VIS
Outline Drawingsizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3906 -
www.toptical.com.tw 02-2346-1510 [email protected]
3916 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MTS80AO Modulator/ShifterTeO2-S modulator for 1064 nmlasers
Thesemodulatorshavebeenspeciallydesigned for largebeam diameterswithout additional optics. Their highefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.
Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-2MHz.
Specifications
•Largeaperture•LinearPolar•Highefficiency•Colinear
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range 1030-1080nm
Transmission >95%,nom98%
Optical Input / Output polarizations Linear/Notspecified
Aperture 3x3mm²
Carrier frequency / Frequency shift 80MHz
Separation angle 130mrd@1064nm
Angular colinearity Inputbeam/Firstorderbeams
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%
Rise time 1μs/mm(min0.3μs)
Amplitude modulation bandwidth >400KHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density >10W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power ≤1Watt
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
MTS80-A3-1064Ac
Outline Drawingsizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax
www.toptical.com.tw 02-2346-1510 [email protected]
AO
Modulators
3926 -
www.toptical.com.tw 02-2346-1510 [email protected]
3936 -
Lasers·Light Sources
Solar Cells·Lighting
CCD Cameras
·Imaging
SpectroscopesTests·Instruments
Semiconductors·Communications
Components·Mechanics·
Positioning
Detection·Sensors
MTS110AO Modulator/ShifterTeO2-S modulator for visible laser
Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.SuitableforhighpowerDPSSlaser...
Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto110+/-2MHz.
Specifications
•Largeaperture•LinearPolar•Highefficiency
Material-Acoustic mode TeO2[S]
Acoustic Velocity NomV=650m/s
Optical Wavelength range 488-635nm
Transmission >95%,nom98%
Optical Input / Output polarizations Linear/Notspecified
Aperture 3x3mm²
Carrier frequency / Frequency shift 110MHz
Separation angle 90mrd@532nm
Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%
Rise time 1μs/mm(min0.3μs)
Amplitude modulation bandwidth >400KHz(-3dB,@1mm)
Static extinction ratio >2000/1
Max optical power density 5W/mm²
Input impedance Nom50Ω
V.S.W.R. Nom<1.5/1
RF Power <1Watt,nom100mW
Connector SMA
Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g
Operating Temperature 10to40°C
Separationangle(Δθ)iswavelength(λ)sensitive:
RFpower(P)iswavelength(λ)sensitive:
MTS110-A3-VIS
Outline Drawingsizesinmm
RelativeDiffractionEfficiencyvsRFPower
RFpower/Pmax