dtsx ao 1 axis deflector - · pdf filerelative efficiency behaviour versus scan angle relative...

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www.toptical.com.tw 02-2346-1510 [email protected] AO Modulators 324 6 - www.toptical.com.tw 02-2346-1510 [email protected] 325 6 - Lasers · Light Sources Solar Cells · Lighting CCD Cameras · Imaging Spectroscopes Tests · Instruments Semiconductors · Communications Components · Mechanics · Positioning Detection · Sensors DTSX AO 1 axis DEFLECTOR • Circular aperture • Linear polar • Large scan angle High resolution deflector from 350 to 1600 nm lasers These deflectors offer a typical resolution of 250 to 400 dots with a round input laser beam from 4.2 up to 6.7 mm (1/e²). Main advantage is the large scan angle which can reach up to 3 degrees in the visible range. With an adapted frequency driver, user will be able to operate this device as a variable frequency shifter. Specifications DTSX-250 DTSX-400 Material-Acoustic mode TeO2 [S] Acoustic Velocity Nom V=650 m/s Optical Wavelength range Designed for a single wavelength on request in [350-1600 nm] Standard : 442, 458, 478, 488, 532, 633, 670, 780, 820, 1064 nm Transmission > 95 % (broadband coating) Optical Input / Output polarizations Linear // - 1 st order flipped Aperture 4.5 x 4.5 mm² (Beam diameter 4.2 mm) 7.5 x 7.5 mm² (Beam diameter 6.7 mm) Carrier frequency / Frequency shift Wavelength dependent Frequency range 50 MHz @VIS 30 MHz @1064 nm Scan angle 41 mrd @532 nm 49 mrd @1064 nm Diffraction efficiency (with TEM00 beam, M² 1.1) > 70 % across frequency range Access time 6.5 μs (beam dia 4.2 mm) 10.3 μs (beam dia 6.7 mm) Resolution (N) 250 @532 nm, 150 @1064 nm 400 @532 nm, 240 @1064 nm Static extinction ratio > 2000/1 Max optical power density Nom 5 W / mm² @532 nm Input impedance Nom 50 Ω V.S.W.R. Nom < 2/1 RF Power ≤ 1 Watt @532 nm, ≤ 2 Watts @1064 nm Connector SMA Size / Weight (Lxlxh) 48.5 x 27.6 x 20.8 mm3 / 60 g Operating Temperature 10 to 40 °C RF power / Pmax Fmin+xx (MHz) Relative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power Separation angle (Dq) is wavelength (l) sensitive: RF power (P) is wavelength (l) sensitive: DTSX-250-1064 250 : Aperture/resolution (250 or 400) 1064 = Wavelength (nm) Outline Drawing sizes in mm

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Page 1: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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3256 -

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DTSXAO 1 axis DEFLECTOR

•Circularaperture• Linearpolar• Largescanangle

High resolution deflector from 350 to 1600 nm lasers

Thesedeflectorsofferatypicalresolutionof250to400dotswitharoundinputlaserbeamfrom4.2upto6.7mm(1/e²).Mainadvantageisthelargescananglewhichcanreachupto3degreesinthevisiblerange.Withanadaptedfrequencydriver,userwillbeabletooperatethisdeviceasavariablefrequencyshifter.

Specifications

DTSX-250 DTSX-400

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range Designedforasinglewavelengthonrequestin[350-1600nm]Standard:442,458,478,488,532,633,670,780,820,1064nm

Transmission >95%(broadbandcoating)

Optical Input / Output polarizations Linear//-1storderflipped

Aperture 4.5x4.5mm²(Beamdiameter4.2mm)7.5x7.5mm²(Beamdiameter6.7mm)

Carrier frequency / Frequency shift Wavelengthdependent

Frequency range 50MHz@VIS30MHz@1064nm

Scan angle 41mrd@532nm49mrd@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >70%acrossfrequencyrange

Access time 6.5μs(beamdia4.2mm) 10.3μs(beamdia6.7mm)

Resolution (N) 250@532nm,150@1064nm

400@532nm,240@1064nm

Static extinction ratio >2000/1

Max optical power density Nom5W/mm²@532nm

Input impedance Nom50Ω

V.S.W.R. Nom<2/1

RF Power ≤1Watt@532nm,≤2Watts@1064nm

Connector SMA

Size / Weight (Lxlxh)48.5x27.6x20.8mm3/60g

Operating Temperature 10to40°C

RFpower/PmaxFmin+xx(MHz)

Relativeefficiencybehaviourversusscanangle RelativeDiffractionEfficiencyvsRFPower

Separationangle(Dq)iswavelength(l)sensitive: RFpower(P)iswavelength(l)sensitive:

DTSX-250-1064250:Aperture/resolution(250or400)1064=Wavelength(nm)

Outline Drawing sizesinmm

Page 2: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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DTSXYAO 2 axis DEFLECTOR

•Circularaperture• Linearpolar• Largescanangle

High resolution deflector from 350 to 1600 nm lasers

Thesedeflectorsoffera typical total resolutionof160000dots (2axis)witharound input laserbeamupto6.7mm(1/e²).Mainadvantage is the largescananglewhichcanreachupto3x3degreesinthevisiblerange.Withanadaptedfrequencydriver,userwillbeabletooperatethisdeviceasaoneaxisdeflectorwithfrequencyshiftcancellation.

Specifications

DTSXY-250 DTSXY-400

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range Designedforasinglewavelengthonrequestin[350-1600nm]Standard:442,458,478,488,532,633,670,780,820,1064nm

Transmission >95%peraxis(broadbandcoating)

Optical Input / Output polarizations Linear┴-1stworkingorderLinear┴

Aperture 4.5x4.5mm²(Beamdiameter4.2mm)

7.5x7.5mm²(Beamdiameter6.7mm)

Carrier frequency / Frequency shift Wavelengthdependent

Frequency range 50MHz@VIS 30MHz@1064nm

Scan angle 41x41mrd²@532nm49x49mrd²@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >50%acrossfrequencyrange(2axis)

Access time 6.5μs(beamdia4.2mm) 10.3μs(beamdia6.7mm)

Resolution (N) 250x250@532nm150x150@1064nm

400x400@532nm240x240@1064nm

Static extinction ratio >2000/1

Max optical power density Nom5W/mm²@532nm

Input impedance Nom50Ω

V.S.W.R. Nom<2/1

RF Power ≤1Watt@532nm,≤2Watts@1064nm(peraxis)

Connector SMA

Size / Weight (Lxlxh)

Operating Temperature 10to40°C

%

Relativeefficiencybehaviourversusscanangle RelativeDiffractionEfficiencyvsRFPower

Fmin+xx(MHz) RFpower/Pmax

Separationangle(Dq)iswavelength(l)sensitive: RFpower(P)iswavelength(l)sensitive:

DTSX-250-1064250:Aperture/resolution(250or400)1064=Wavelength(nm)

Outline Drawing sizesinmm

Page 3: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

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MCQ40-A2.5-1064AO ModulatorHigh resolution deflector from 350 to 1600 nm lasers

AOModulatorfor1064nmlasersLargeaperture–AircoolingHighDamagethreshold

Specifications

Material CrystalQUARTZ

Acoustic Velocity V=5740m/s(L)

Optical Wavelength range 1064nm

Transmission >99.5%withhardV-coating

Optical Input / Output polarizations Linear┴

Aperture 2.5x2.5mm²

Carrier frequency / Frequency shift 40.68MHz(otheronrequest)

Operating mode Bragg

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >80%Nom85%(1storder)

Rise/Fall time 115ns/mm

Max optical peak power density >500MW/cm²

Separation angle (0-1) 7.54mrd

Input impedance Nom50Ω

V.S.W.R. Nom<1.2/1

RF Power Nom20Watts

RF Connector BNC

Thermal security switch ShortCircuit=Enable;OpenCircuitDisable

Heat exchange Conductionthroughbaseplate

Optical path length 42mm

Size / Weight (Lxlxh)52.2x62x33.8mm3/50g

Operating Temperature 10to40°C

MCQ40-A2.5-1064XX=carrierfrequency40.68(Otheronrequest)Y=(aperture,mm)=2.5mm(otheronrequest)

Outline Drawing sizesinmm

Page 4: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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MCQ110 VISAO Modulator/ShifterHigh power 532 nm modulator, air cooling

AOModulatorfor1064nmlasersLargeaperture–AircoolingHighDamagethreshold

Specifications

ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethe laserbeamwithoutadditionaloptics.TheycovertheVISrangeupto650nm.SuitableforDPSS532nmorAR+lasers.

Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.

MQC110-A2-VIS

Material-Acoustic mode Quartz

Acoustic Velocity V=5740m/s

Optical Wavelength range 458-650nm

Transmission >95%

Optical Input / Output polarizations Linear┴Aperture 2x2mm²

Carrier frequency / Frequency shift 110MHz

Separation angle 10.2mrd@532nm(Scan angle over 30 MHz: 2.8 mrd @532nm)

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

>85%@532nm,@1.5mmbeamdia(≥ 70% over 30 MHz)

Rise time 115ns/mm(min 50 ns – min beam diameter 0.5 mm)

Amplitude modulation bandwidth >8MHz(-3dB)

Static extinction ratio >1000/1

Max optical power density >100W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power Typ5Watts

Connector SMA

Heat Exchange Conductionthroughbaseplate

Size / Weight (Lxlxh)

Operating Temperature 10to40°C

Page 5: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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MG40AO Modulator/ShifterGe modulator for 9.3 μm and 10.6 μm lasers

•10.6and9.3μmstandarddesigns•Watercooling•Upto200Watts

Thesemodulatorshavebeenspeciallydesigned for far infraredrangeoperation from3μmto11μm.Astandarddesignfor10.6μmisproposed.

Theycanalsobeusedas fixed frequencyshifters@40Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto40+/-2.5MHz.

MG40-Ax-10600 MG40-Ax-9300

Material-Acoustic mode Germanium

Acoustic Velocity V=5500m/s

Optical Wavelength range 10.6μm 9.3-9.4μm

Transmission Nom>90%

Optical Input / Output polarizations Linear//

Aperture 6x10mm²or8x10mm²

Carrier frequency / Frequency shift 40MHz

Separation angle 77mrd67.6mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 80%

Rise time 120ns/mm

Amplitude modulation bandwidth >800KHz(-3dB,@5mm)

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power Nom50Watts Nom40Watts

Connector BNC

Size / Weight (Lxlxh)71.5x63.4x39.5mm3/250g

Heat exchange Watercooling(typ250ml/min)

Thermal security sensor Securitycu-offforovertemperature

Water connectors

Operating Temperature 10to40°C

Specifications

RFpower/Pmax

RelativeDiffractionEfficiencyvsRFPower

MG40-Ax-10600X(aperture,mm)=6or810600=wavelength(nm:10600or9300)

Outline Drawing sizesinmm

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 6: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

3346 -

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3356 -

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MG40AO Modulator/ShifterGe modulator for 2.6-3.5 μm lasers

•10.6and9.3μmstandarddesigns•Watercooling•Upto200Watts

Thesemodulatorshavebeenspecially designed for far infrared rangeoperationfrom2.6μmto3.5μm.

Theycanalsobeusedasfixedfrequencyshifters@40MHz.

Specifications

MG40-A3-2.6-3.5μm

Material-Acoustic mode Germanium

Acoustic Velocity V=5500m/s

Optical Wavelength range 2.6-3.5μm

Transmission Nom>95%

Optical Input / Output polarizations Linear//

Aperture 3x3mm²

Carrier frequency / Frequency shift 40MHz

Separation angle 19mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%

Rise time 120ns/mm

Amplitude modulation bandwidth >3MHz

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power Nom4Watts

Connector BNC

Size / Weight (Lxlxh)71.5x63.4x39.5mm3/250g

Heat exchange Watercooling(typ250ml/min)

Thermal security sensor Securitycut-offforovertemperature

Water connectors

Operating Temperature 10to40°C

MG40-AxX(aperture,mm)=6or8

Outline Drawing sizesinmm

RFpower/Pmax

RelativeDiffractionEfficiencyvsRFPower

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 7: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

3366 -

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MQ40High power AOMWater cooled AOM for 1540-1570 nm lasers•1.56μmdesign•LinearPolarization•Watercooling•Highefficiency

ThisAOModulator isawatercooledAOMtobeusedwithhighpower linearlypolarized lasers1560nm.Thehighqualitygradefusedsilicacombinedwithahigh topsurface finishingandhardcoatingwith lowreflectivity, togetherwithauniqueand innovative lowstressdesign,offer low insertion lossesandahighdamagethreshold.

Specifications

MQ40

Material FusedsilicaLongitudinal

Acoustic Velocity V=5960m/s(L)

Optical Wavelength range 1540-1570nm

Transmission >99.5%withhardV-coating

Optical Input / Output polarizations Linear┴Aperture 2x2mm²

Carrier frequency / Frequency shift 40.68MHz

Operating mode Bragg

Separation angle (orders 0-1) 10.6mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

>80%(typ85%)@PRF40W>75%(typ80%)@PRF30W

Rise/Fall time 110ns/mm(L)

Max optical peak power density >500MW/cm²

Input impedance Nom50W

V.S.W.R. Nom<1.2/1

RF Power <40Ω

RF Connector SMA

Thermal Security Interlock / Connector SMC

Heat exchange Watercooling–Nom250ml/min@20°C

Water Chamber Standard=AluminiumOption=StainlessSteel

Optical path length 46mm

Size / Weight (Lxlxh)52.2x62x37.5mm3/350g

Operating Temperature 10to40°C

MQ40-A2-L1560-WScY=(aperture,mm)=2

Outline Drawing Sizesinmm

Page 8: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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MQ80-A0.7-L1030.1064-Z20-WLgAO High power ModulatorHigh power 1030-1064 nm modulator

•1030–1064nmdesign•LinearPolarization•HighPower•Watercooling•Highefficiency

Madeof fusedsilica for linearlypolarized lasers, thehardcoatingwith lowreflectivityandhighqualitymaterialassuresahighdamagethreshold>500MW/cm².

Specifications

Material-Acoustic mode Fusedsilica

Acoustic Velocity V=5960m/s

Optical Wavelength range 1030–1064nm

Transmission >99.5%withhardV-coating

Optical Input / Output polarizations Linear┴

Aperture 0.7x1mm²

Carrier frequency / Frequency shift 80MHz

Operating mod Bragg

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >80%

Rise time 110ns/mm(min10ns)

Max optical power density >500MW/cm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.2/1

RF Power Nom15Watts

Connector SMA

Heat Exchange WaterCooling

Water Chamber Standard=AluminiumOption=StainlessSteel

Optical path length 20mm

Size / Weight (Lxlxh)75x38.8x25.8mm3

Operating Temperature 10to40°C

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 9: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

3406 -

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MQ110 VISAO Modulator/ShifterHigh power 532 nm modulator

•Highpower•LinearPolar•Largeaperture

Thesemodulatorshavebeenspeciallydesigned forapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.Theycover theVISrangeupto650nm.SuitableforDPSS532nmorAR+lasers.

Theycanalsobeusedasfixedfrequencyshifters@110MHz,aswellasvariablefrequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.

MQ110-A1.5-VIS-WLg

Material-Acoustic mode Fusedsilica

Acoustic Velocity V=5960m/s

Optical Wavelength range 458-650nm

Transmission >95%

Optical Input / Output polarizations Linear┴Aperture 1.5x1.5mm²

Carrier frequency / Frequency shift 110MHz

Separation angle Typ9.8mrd(Scanangleover30MHz:2.6mrd@532nm)

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

Nom90%@532nm,@1mmbeamdia(≥70%over30MHz)

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >4MHz(-3dB,@1mm)

Static extinction ratio >1000/1

Max optical power density >100W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power Typ7.5Watts

Connector SMA

Heat Exchange ConductionthroughbaseplateorWaterCooling

Size / Weight (Lxlxh)75x38.8x25.8mm3

Operating Temperature 10to40°C

Specifications

OPTIONSFrequencyrange110+/-15MHzNominalefficiencyover110+/-15MHz>70%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 10: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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MQ110-A1-UV-HkAO Modulator/ShifterHigh power 355 nm modulator

•Highpower•LinearPolarization

ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.TheycovertheUVrangeuptoVisiblerange.SuitableforDPSS355nmorUVAR+lasers.

Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.

Specifications

Material-Acoustic mode FusedsilicaUVgrade

Acoustic Velocity V=5960m/s

Optical Wavelength range 325-442nm

Transmission >95%

Optical Input / Output polarizations Linear┴

Aperture 1x1mm²

Carrier frequency / Frequency shift 110MHz

Separation angle >6mrd(Scanangleover30MHz:1.8mrd@355nm)

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@355nm,@0.7mmbeamdia

Rise time 110ns/mm(min30ns)

Amplitude modulation bandwidth >6MHz(-3dB,@0.7mm)

Static extinction ratio >1000/1

Max optical power density >10W/mm²@355nm

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power Nom3Watts

Connector SMA

Size / Weight (Lxlxh)

Operating Temperature 10to40°C

OPTIONSFrequencyrange110+/-15MHzNominalefficiencyover110+/-15MHz>70%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 11: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

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MQ110AO Modulator/ShifterHigh power 355 nm modulator

•Highpower•LinearPolar•Largeaperture

ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsuser tocombinethe laserbeamwithoutadditionaloptics.Theycover theUVrangeuptoVisiblerange.SuitableforDPSS355nmorUVAR+lasers.

Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto110+/-15MHz.

Specifications

Material-Acoustic mode FusedsilicaUVgrade

Acoustic Velocity V=5960m/s

Optical Wavelength range 325-442nm

Transmission >95%

Optical Input / Output polarizations Linear┴

Aperture 3x3mm²

Carrier frequency / Frequency shift 110MHz

Separation angle >6mrd(Scanangleover30MHz:1.8mrd@355nm)

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

Nom90%@355nm,@1mmbeamdia(≥75%over30MHz)70%@355nm,@250μmbeamdia

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >4MHz(-3dB,@1mm)

Static extinction ratio >1000/1

Max optical power density >10W/mm²@355nm

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <4Watts

Connector SMA

Size / Weight (Lxlxh)57x60x52.9mm3/250g

Operating Temperature 10to40°C

OPTIONSAperture:1x1,1.5x1.5,2x2mm²Frequencyrange110+/-15MHzNominalefficiencyover80+/-15MHz>70%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 12: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

www.toptical.com.tw 02-2346-1510 [email protected]

AO

Modulators

3466 -

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MQ180AO Modulator/ShifterHigh power modulator

•Highspeed•Highpower•LinearPolar

Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.TheycoverthedeepUVrangeuptoVisiblerange.SuitableforDPSS355nmor532nm.

Theycanalsobeusedas fixed frequencyshifters@180Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto180+/-25MHz.

Specifications

MQ180-A0,2-UV MQ180-A0,2-VIS

Material-Acoustic mode Fusedsilica

Acoustic Velocity V=5960m/s

Optical Wavelength range 325-442nm 440-670nm

Transmission >95%

Optical Input / Output polarizations Linear┴

Aperture 0.2x1mm²

Carrier frequency / Frequency shift 180MHz

Separation angle >9mrd >13mrd

Diffraction efficiency (with focussed TEM00 beam 90 μm, M² ≤ 1.1) ≥80% ≥70%

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >48MHz(-3dB,@90μm)

Static extinction ratio >1000/1

Max optical power density >100W/mm²@VIS

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤2Watts ≤4Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

OPTIONSFrequencyrange180+/-30MHzNominalefficiencyover180+/-30MHz>60%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MQ180AO Modulator/ShifterHigh power modulator

•Highspeed•Highpower•LinearPolar

Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.TheycoverthedeepUVrangeuptoVisiblerange.SuitableforDPSS355nmor532nm.

Theycanalsobeusedas fixed frequencyshifters@180Mhz,aswellasvariable frequencyshiftersordeflectorswithafrequencyrangeupto180+/-25MHz.

Specifications

MQ180-A0,7-1030 nm

Material-Acoustic mode Fusedsilica

Acoustic Velocity V=5960m/s

Optical Wavelength range 1030nm

Transmission >99.5%

Optical Input / Output polarizations Linear┴

Aperture 0.7x1mm²

Carrier frequency / Frequency shift 180MHz

Separation angle >31.1mrd

Diffraction efficiency (with focussed TEM00 beam 90 μm, M² ≤1.1)

>20%,RFpower4watts>30%,RFpower6watts>60%,RFpower15watts

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >10MHz

Static extinction ratio >1000/1

Max optical peak power density >500MW/cm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

OPTIONSFrequencyrange180+/-30MHzNominalefficiencyover180+/-30MHz>60%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MQ180-A1.5-244.266-BrAO Modulator/ShifterHigh power 244-266 nm modulator

•Highpower•LinearPolar•Largeaperture

ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.TheirBrewsterdesignallowshightransmissionin244to266nmrange.

Theycanalsobeusedasfixedfrequencyshifters@180MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto180+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Material-Acoustic mode FusedsilicaUVgrade

Acoustic Velocity V=5960m/s

Optical Wavelength range 244-266nm

Transmission Brewsterincidence

Optical Input / Output polarizations Linearparalleltobaseplate

Aperture 1.5x2mm²

Carrier frequency / Frequency shift 180MHz

Separation angle >7mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@266nm

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >4MHz(-3dB,@1mm)

Static extinction ratio >1000/1

Max optical power density >10W/mm²@266nm

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <4Watts

Connector SMA

Size / Weight (Lxlxh)

Operating Temperature 10to40°C

Specifications OPTIONSFrequencyrange180+/-15MHzNominalefficiencyover180+/-15MHz>70%

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MQ200-A1.5-266-BrAO Modulator/ShifterHigh power 244-266 nm modulator

•Highpower•LinearPolar•Largeaperture

ThesemodulatorshavebeenspeciallydesignedforapplicationsforwhichTeO2cannotbeused.Theirlargeapertureallowsusertocombinethelaserbeamwithoutadditionaloptics.TheirBrewsterdesignallowshightransmissionin244to266nmrange.

Theycanalsobeusedasfixedfrequencyshifters@200MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto200+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

Material-Acoustic mode FusedsilicaUVgrade

Acoustic Velocity V=5960m/s

Optical Wavelength range 244-266nm

Transmission Brewsterincidence

Optical Input / Output polarizations Linearparalleltobaseplate

Aperture 1.5x2mm²

Carrier frequency / Frequency shift 200MHz

Separation angle >8mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom90%@266nm

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth >4MHz(-3dB,@1mm)

Static extinction ratio >1000/1

Max optical power density >10W/mm²@266nm

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <4Watts

Connector SMA

Size / Weight (Lxlxh)

Operating Temperature 10to40°C

OPTIONSFrequencyrange180+/-15MHzNominalefficiencyover180+/-15MHz>70%

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

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MQ240AO Modulator/ShifterHigh power 244-266 nm modulator

•Highpower•LinearPolar•Largeaperture

Thesemodulatorshavebeenspeciallydesignedforhighspeedhighpowermodulation,whereTeO2cannotbeused.

Theycanalsobeusedasfixedfrequencyshifters@240MHz,aswellasvariablefrequencyshiftersordeflectorswithafrequencyrangeupto240+/-40MHz.

Specifications

Material-Acoustic mode Fusedsilica

Acoustic Velocity V=5960m/s

Optical Wavelength range UV:325-425nm

Transmission >95%

Optical Input / Output polarizations Linear┴

Aperture 0.2x1mm²

Carrier frequency / Frequency shift 240MHz

Separation angle >13mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) UV:≥80%

1st order ellipticity Nom85%@90μmbeamdia

Rise time 110ns/mm(min10ns)

Amplitude modulation bandwidth 48MHz(-3dB,@90μm)

Static extinction ratio >2000/1

Max optical power density >10W/mm²

Input impedance Nom50W

V.S.W.R. Nom<1.5/1

RF Power UV:≤2Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

OPTIONSFrequencyrange240+/-40MHzNominalefficiencyover240+/-40MHz>60%

Outline Drawing sizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

Page 17: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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MT65-B20A1.5-1064-4x-002AO Modulator – 4 channelsMCM technology modulator for 1064 nm lasers

•1064m•Linear/RandomPolar•4channels

Thesemodulatorshavebeenspeciallydesignedfor1064nmoperation.Theycanalsobeusedaslowresolutiondeflectorswithafrequencyrangeupto20MHz.Their4channelsdesignsallowusertoworkwithupto4parallelbeams.

Specifications

Material-Acoustic mode TeO2[L]

Number of channels 4

Acoustic Velocity V=4200m/s

Optical Wavelength range 1064nm

Transmission 98%@1064nm

Optical Input / Output polarizations Linear

Aperture 1.5x1.5mm²

Centre to Centre Channels spacing 4mm

Carrier frequency / Frequency shift 65+/-10MHz

Separation angle >13.9mrd

Scan angle 5mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%@Fc,≥70%overfrequencyrange

Rise time 160ns/mm

Amplitude modulation bandwidth >3MHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density >10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power nom2Wattsperchannel

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

OPTION Version532nm

Outline Drawing (sizesinmm)

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MT65-B20A2-1064-2xAO Modulator – 2 channelsMulti-channels modulator for 1064 nm lasers

•1064m•Linear/RandomPolar•4channels

Thesemodulatorshavebeenspeciallydesigned for1064nmoperation.Theycanalsobeusedas lowresolutiondeflectorswithafrequencyrangeupto20MHz.Their4channelsdesignsallowusertoworkwithupto4parallelbeams.

Specifications

Material-Acoustic mode TeO2[L]

Number of channels 2

Acoustic Velocity V=4200m/s

Optical Wavelength range 1064nm

Transmission 98%@1064nm

Optical Input / Output polarizations Linear

Aperture 2x2mm²

Centre to Centre Channels spacing 4mm

Carrier frequency / Frequency shift 65+/-10MHz

Separation angle >13.9mrd

Scan angle 5mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%@Fc,≥70%overfrequencyrange

Rise time 160ns/mm

Amplitude modulation bandwidth >3MHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density >10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power nom2.2Wattsperchannel

RF Connectors / Size / Weight SMA/(Lxlxh)50.9x22.4x15.8mm3/50g

Heat Exchange Watercooling

Operating Temperature 10to40°C

OPTION Version532nmOtherapertures,Otherchannelspacing

Outline Drawing (sizesinmm)

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MT80AO Modulator/ShifterMulti-channels modulator for 1064 nm lasers

•Widespectralrange•LinearorrandomPolar

Thesemodulatorshavebeenspeciallydesigned forgeneralpurpose lowspeedapplications.TheyareproposedwithvariouswavelengthrangesorwithV-coating.

Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-15MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm

Transmission VIS/IR:>95%1064nm:98%@1064nm

Optical Input / Output polarizations Linear

Aperture 1x2mm²or1.5x2mm²

Carrier frequency / Frequency shift 80MHz

Separation angle [email protected]@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%

Rise time 160ns/mm(min24ns)

Amplitude modulation bandwidth >20MHz(-3dB,@150μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²@532nm,IR:>10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power VIS:≤1WattsIR/1064nm:≤2Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

OPTION Frequencyrange80+/-15MHzNominalefficiencyover80+/-15MHz>70%

MT80-Ax-zzX(aperture,mm)=1or1.5Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm

Outline Drawing (sizesinmm)

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

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MT80AO Modulator/ShifterTeO2 modulator for 1300 to 1600 nm lasers

•1300-1600nmspectralrange•LinearorrandomPolar

Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-21MHz.

Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.

Specifications

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 1300–1600nm

Transmission >95%

Optical Input / Output polarizations Linear┴

Aperture 0.7x3mm²

Carrier frequency / Frequency shift 80MHz

Separation angle 29.5mrd@1550nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >60%@80MHz>40%overfrequencyrange80+/-21MHz

Rise time 160ns/mm(min24ns)

Amplitude modulation bandwidth >20MHz(-3dB,@150μm)

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤2.2Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange80+/-21MHzNominalefficiencyover80+/-21MHz>40%

MT80-Ax-zzX(aperture,mm)=0.7Y=frequencyrange(MHz)ifanyZZ=1300-1600(nm)

Outline Drawing (sizesinmm)

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MT80-BDO

AO Modulator/ShifterTeO2 modulator for 980-1100 nm lasers

•Widespectralrange•LinearorrandomPolar•BeamDriftOptimization(BDO)

Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-15MHz.

Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.

Specifications

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 1064nm:980-1100nm

Transmission 1064nm:98%@1064nm

Optical Input / Output polarizations Linear

Aperture 1.5x2mm²

Carrier frequency / Frequency shift 80MHz

Separation angle 20.3mrd@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%

Rise time 160ns/mm(min24ns)

Amplitude modulation bandwidth >20MHz(-3dB,@150μm)

Static extinction ratio >2000/1

Max optical power density IR:>10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power 1064nm:≤2.2Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange80+/-15MHzNominalefficiencyover80+/-15MHz>70%

MT80-Ax-zzX(aperture,mm)=1.5Y=frequencyrange(MHz)ifanyZZ=1064nm

Outline Drawing (sizesinmm)

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MT110AO Modulator/ShifterTeO2 modulator for 450-1100 nm lasers

Thesemodulatorshavebeenspeciallydesignedforgeneralpurposeapplications.TheyareproposedwithvariouswavelengthrangesorwithV-coating.Theycanalsobeusedasfixedfrequencyshifters@110MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto110+/-25MHz.

Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeed lowresolutiondeflector.

Specifications

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm

Transmission VIS/IR:>95%1064nm:98%@1064nm

Optical Input / Output polarizations Linear

Aperture 1x2mm²or1.5x2mm²

Carrier frequency / Frequency shift 110MHz

Separation angle [email protected]@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 85%

Rise time 160ns/mm(min15ns)

Amplitude modulation bandwidth >32MHz(-3dB,@90μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²@532nm,IR:>10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power VIS:≤1WattsIR/1064nm:≤2Watts

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange110+/-25MHzNominalefficiencyover110+/-25MHz>70%HeatsinkoncrystalforIRA1.5version:option-Hk

MT110-Ax-zzX(aperture,mm)=1or1.5Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm

Outline Drawing (sizesinmm)

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MT110 & MDS1CAO ModulatorA powerfull modulator for Tunable Ti:Sa lasers With USB Digital driver

Thesemodulatorshavebeenspeciallydesignedfor tunableTi:Salasers.Inassociationwiththeir“tracking”driverMDS1C,theyallowtogetaconstanthighdiffractionefficiency,togetherwithaconstantoutputanglewhatever is the laserwavelengthbetween700and1060nm.ThecompleteadjustmentcanbeachievedthroughUSBorRS232control.

Specifications

MT110-B50A1,5-IR-Hk

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 700-1060nm

Transmission >95%

Optical Input / Output polarizations Linear

Aperture 1.5x2mm²

Carrier frequency / Frequency shift 110MHz+/-25MHz

Separation angle Nom23mrd

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) Nom85%

Rise time 160ns/beamdiameter1mm

Amplitude modulation bandwidth 3MHz(-3dB)

Static extinction ratio >2000/1

Max optical power density >10W/mm²

Input impedance Nom50W

V.S.W.R. Nom<1.5/1

RF Power ≤2Watts

Connector SMA

Size / Weight (Lxlxh)60.1x28.7x26.5mm3/50g

Operating Temperature 10to40°C

Efficiencyversuswavelengthwithoutinputanglereadjustment

Frequencytrackingversuswavelength OutputAngleversuswavelength

RelativeDiffractionEfficiencyvsRFPower

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Associated RF driver MDS1C

TheMDS1Cdriver isbasedonDirectDigitalSynthesizers (DDS).Theyproducea tuneable,stableandaccurateRFfrequencysignalfortheTi:Samodulator.Itsdesignwith“ontheedge”technologyoffersuniqueperformanceintermofaccuracy, speed and stability, thanks to its internal temperature correction and high linearity design.ThebuiltinamplifierdeliversthenecessaryRFpowertodrivetheacousto-opticdevice,withreducedpowerconsumption(AA “COLD DESIGN”).Theadjustmentsofthedriver(Frequency&Power)canbedonewitharemotecontrol,USBorthroughRS232communicationtoallowuserflexibilityinpowercontrolorfrequencyscanning.

MDS1C-B6-33-85.135

Number of channels 1

Frequency range 85-135

Frequency stability +/-2ppm/°C

Frequency accuracy Nom1KHz

Frequency step Nom1KHz

Frequency control RemoteControlorUSB,Option:RS232

Power Supply OEMversion:24VDC-<0.7ALaboratoryversion:110/230VAC-50-60Hz

Rise Time / Fall time (10-90 %) <50ns

Modulation Input Control External :Analog0-5V/10KWorAnalog0-10V/10KWInternal:RemoteControlorUSB,Option:RS232

Extinction ratio Nom70dB

Output RF power 33dBm(2Watts)

Output Impedance 50Ω

V.S.W.R. Nom<1.5/1

Input / Output connectors DB25/SMA(DB9forRS232)

Size OEMversion:207x99x27.7mm3

Laboratoryversion:Rack19”,1U

Weight OEMversion:nom0.6kgLaboratoryversion:nom4kg

Heat exchange OEMversion:ConductionthroughbaseplateLaboratoryversion:standalone

Operating temperature 10to40°C

Maximum case temperature OEMversion:50°C

Specifications

Outline Drawing (sizesinmm)

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AO

Modulators

3726 -

www.toptical.com.tw 02-2346-1510 [email protected]

3736 -

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Positioning

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Outline Drawing (sizesinmm)

Page 26: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3746 -

www.toptical.com.tw 02-2346-1510 [email protected]

3756 -

Lasers·Light Sources

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MT220Fast AO Modulator/ShifterTeO2 modulator for 400-1100 nm lasersThesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.

Theycanalsobeusedasfixedfrequencyshifters@200Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to200+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

SpecificationsMaterial-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range

LVIS:400-442nmVIS:450-700nmIR:700-1100nm1064nm:980-1100nm

Transmission LVIS/VIS/IR:>95%1064nm:98%@1064nm

Optical Input / Output polarizations Linear

Aperture 0.5x2mm²(optionfor1064nm0.2x1mm²)

Carrier frequency / Frequency shift 200MHz

Separation angle [email protected]@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

LVIS:85%@300μm,75%@50μmVIS:85%@300μm,75%@50μmIR:85%@300μm,65%@50μm1064nm:70%@300μm,60%@100μm1064nm:80%@100μm,75%@64μm->@0.2x1mm²

Rise time 160ns/mm(min8ns)

Amplitude modulation bandwidth >60MHz(-3dB,@50μm)

Static extinction ratio >2000/1

Max optical power density LVIS:0.5W/mm²,VIS:5W/mm²,IR:>10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power LVIS/VIS:≤1.3WattsIR/1064nm:≤2.2Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange200+/-50MHzNominalefficiencyover200+/-50MHz>50%(VIS,@800nm)

MT110-Ax-zzX=0.5(aperture,mm)or0.2Y=frequencyrange(MHz)ifanyZZ=LVIS(400-442nm),VIS(450-700nm),IR(700-1100nm),@1064nm

Outline Drawing (sizesinmm)

Page 27: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3766 -

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3776 -

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Positioning

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MT250Fast AO Modulator/ShifterTeO2 modulator for 450-1100 nm lasersThesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.Theycanalsobeusedasfixedfrequencyshifters@250Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to250+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

SpecificationsMaterial-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength rangeVIS:450-700nmIR:700-1100nm1064nm:980-1100nm

Transmission VIS/IR:>95%1064nm:98%@1064nm

Optical Input / Output polarizations Linear

Aperture 0.5x2mm²

Carrier frequency / Frequency shift 250MHz

Separation angle [email protected]@1064nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

VIS:85%@300μm,75%@50μmIR:85%@300μm,65%@50μm1064nm:70%@300μm,60%@100μm

Rise time 160ns/mm(min8ns)

Amplitude modulation bandwidth >60MHz(-3dB,@50μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²,IR:>10W/mm²

Input impedance Nom50W

V.S.W.R. Nom<1.5/1

RF Power VIS:≤1.3WattsIR/1064nm:≤2.2Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange250+/-50MHzNominalefficiencyover250+/-50MHz>50%(VIS,@800nm)

MT110-Ax-zzX=0.5(aperture,mm)or0.2Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm),IR(700-1100nm),@1064nm

Outline Drawing (sizesinmm)

Page 28: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3786 -

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3796 -

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MT250Fast AO Modulator/ShifterTeO2 modulator for 700- 950 nm lasers

Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability, repeatibility,highextinctionratioand lownoisearethekeyfactors.

Theycanalsobeusedasfixedfrequencyshifters@250Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to250+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 800:700-950nm

Transmission >95%

Optical Input / Output polarizations Linear

Aperture 0.12x1mm²

Carrier frequency / Frequency shift 250MHz

Separation angle 47.6mrd@800nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) 800:85%@90μm,75%@55μm

Rise time 160ns/mm

Amplitude modulation bandwidth >30MHz(-3dB,@90μm)

Static extinction ratio >2000/1

Max optical power density IR:>10W/mm²

Input impedance Nom50W

V.S.W.R. Nom<1.5/1

RF Power 800:≤2Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

•Highspeed•LinearorrandomPolar•Printing

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange250+/-50MHzNominalefficiencyover250+/-50MHz>50%(VIS,@800nm)

MT250-Ax-zzX=0.12(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)

Outline Drawing (sizesinmm)

Page 29: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3806 -

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3816 -

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MT350Fast AO Modulator/ShifterTeO2 modulator for 450-700 nm lasers

Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioandlownoisearethekeyfactors.

Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeup to350+/-50MHz.Withanadapted frequency range,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

•Highspeed•LinearorrandomPolar•Printing

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range VIS:450-700nm

Transmission >95%

Optical Input / Output polarizations Linear

Aperture 0.12x2mm²(optionfor1064nm0.2x1mm²)

Carrier frequency / Frequency shift 350MHz

Separation angle 44.3mrd@532nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

80%@70μm,70%@30μm(Eliipticitynom80%@30μm)

Rise time 160ns/mm(min5ns)

Amplitude modulation bandwidth >96MHz(-3dB,@30μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤1.3Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%(VIS,@800nm)

MT250-Ax-zzX=0.12(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=VIS(450-700nm)

Outline Drawing (sizesinmm)

Page 30: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3826 -

www.toptical.com.tw 02-2346-1510 [email protected]

3836 -

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MT350Fast AO Modulator/ShifterTeO2 modulator for 700-950 nm lasers

Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioand lownoisearethekeyfactors.

Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeupto350+/-50MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

•Highspeed•LinearorrandomPolar•Printing

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 800:700-950nm

Transmission >95%

Optical Input / Output polarizations Linear

Aperture 0.2x1mm²

Carrier frequency / Frequency shift 350MHz

Separation angle 66.7mrd@800nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

80%@70μm,70%@30μm(Eliipticitynom80%@30μm)

Rise time 160ns/mm(min5ns)

Amplitude modulation bandwidth >96MHz(-3dB,@30μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤1.3Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%

MT350-Ax-zzX=0.2(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)

Outline Drawing (sizesinmm)

Page 31: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3846 -

www.toptical.com.tw 02-2346-1510 [email protected]

3856 -

Lasers·Light Sources

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MT350Fast AO Modulator/ShifterTeO2 modulator for 700-950 nm lasers

Thesemodulatorshavebeenspeciallydesigned forhighspeedprintingand facsimileapplications, forwhichhighaccuracy,stability,repeatability,highextinctionratioand lownoisearethekeyfactors.

Theycanalsobeusedasfixedfrequencyshifters@350Mhz,aswellasvariablefrequencyshifterswithafrequencyrangeupto350+/-50MHz.Withanadaptedfrequencyrange,userwillbeabletooperatethisdeviceasahighspeedlowresolutiondeflector.

Specifications

•Highspeed•LinearorrandomPolar•Printing

Material-Acoustic mode TeO2[L]

Acoustic Velocity V=4200m/s

Optical Wavelength range 800:700-950nm

Transmission >95%

Optical Input / Output polarizations Linear

Aperture 0.12x2mm²

Carrier frequency / Frequency shift 350MHz

Separation angle 66.7mrd@800nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1)

80%@70μm,70%@30μm(Eliipticitynom80%@30μm)

Rise time 160ns/mm(min5ns)

Amplitude modulation bandwidth >96MHz(-3dB,@30μm)

Static extinction ratio >2000/1

Max optical power density VIS:5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤1.3Watts

Connector SMA

Size / Weight (Lxlxh)47x33x17.8mm3/50g

Operating Temperature 10to40°C

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

OPTION Frequencyrange350+/-50MHzNominalefficiencyover350+/-50MHz>50%

MT350-Ax-zzX=0.2(aperture,mm)Y=frequencyrange(MHz)ifanyZZ=800(700-950nm)

Outline Drawing (sizesinmm)

Page 32: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3866 -

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3876 -

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MTS40AO Modulator/ShifterTeO2-S modulator for 532-700 nm

Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.

Theycanalsobeusedasfixedfrequencyshifters@40MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto40+/-2MHz.

Specifications

•Largeaperture•LinearPolar•Highefficiency

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range 532-700nm

Transmission >95%,nom98%

Optical Input / Output polarizations Linear/Notspecified

Aperture 2x2mm²

Carrier frequency / Frequency shift 40MHz

Separation angle 39mrd@633nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%

Rise time 1μs/mm(min0.3μs)

Amplitude modulation bandwidth >400KHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <1Watt,nom100mW

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

MTS40-A2-VIS

Outline Drawingsizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Page 33: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3886 -

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3896 -

Lasers·Light Sources

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MTS40AO Modulator/ShifterTeO2-S modulator for 532-700 nm

Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.

Theycanalsobeusedasfixedfrequencyshifters@40MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto40+/-2MHz.

Specifications

•Largeaperture•LinearPolar•Highefficiency

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range 532-700nm

Transmission >95%,nom98%

Optical Input / Output polarizations Linear/Notspecified

Aperture 2x2mm²

Carrier frequency / Frequency shift 40MHz

Separation angle 39mrd@633nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%

Rise time 1μs/mm(min0.3μs)

Amplitude modulation bandwidth >400KHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <1Watt,nom100mW

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

MTS40-A2-VIS

Outline Drawingsizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Page 34: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3906 -

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3916 -

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MTS80AO Modulator/ShifterTeO2-S modulator for 1064 nmlasers

Thesemodulatorshavebeenspeciallydesigned for largebeam diameterswithout additional optics. Their highefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.

Theycanalsobeusedasfixedfrequencyshifters@80MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto80+/-2MHz.

Specifications

•Largeaperture•LinearPolar•Highefficiency•Colinear

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range 1030-1080nm

Transmission >95%,nom98%

Optical Input / Output polarizations Linear/Notspecified

Aperture 3x3mm²

Carrier frequency / Frequency shift 80MHz

Separation angle 130mrd@1064nm

Angular colinearity Inputbeam/Firstorderbeams

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%

Rise time 1μs/mm(min0.3μs)

Amplitude modulation bandwidth >400KHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density >10W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power ≤1Watt

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

MTS80-A3-1064Ac

Outline Drawingsizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax

Page 35: DTSX AO 1 axis DEFLECTOR - · PDF fileRelative efficiency behaviour versus scan angle Relative Diffraction Efficiency vs RF Power ... High power 532 nm modulator, air cooling AO Modulator

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AO

Modulators

3926 -

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3936 -

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MTS110AO Modulator/ShifterTeO2-S modulator for visible laser

Thesemodulators/shiftershavebeenspeciallydesignedforlargebeamdiameterswithoutadditionaloptics.Theirhighefficiencyandlowdrivepowerwillsuitmostofthelowspeedapplications.SuitableforhighpowerDPSSlaser...

Theycanalsobeusedas fixed frequencyshifters@110MHz,aswellasvariablefrequencyshifterswithafrequencyrangeupto110+/-2MHz.

Specifications

•Largeaperture•LinearPolar•Highefficiency

Material-Acoustic mode TeO2[S]

Acoustic Velocity NomV=650m/s

Optical Wavelength range 488-635nm

Transmission >95%,nom98%

Optical Input / Output polarizations Linear/Notspecified

Aperture 3x3mm²

Carrier frequency / Frequency shift 110MHz

Separation angle 90mrd@532nm

Diffraction efficiency (with TEM00 beam, M² ≤ 1.1) >85%,nom90%

Rise time 1μs/mm(min0.3μs)

Amplitude modulation bandwidth >400KHz(-3dB,@1mm)

Static extinction ratio >2000/1

Max optical power density 5W/mm²

Input impedance Nom50Ω

V.S.W.R. Nom<1.5/1

RF Power <1Watt,nom100mW

Connector SMA

Size / Weight (Lxlxh)50.9x22.4x15.8mm3/50g

Operating Temperature 10to40°C

Separationangle(Δθ)iswavelength(λ)sensitive:

RFpower(P)iswavelength(λ)sensitive:

MTS110-A3-VIS

Outline Drawingsizesinmm

RelativeDiffractionEfficiencyvsRFPower

RFpower/Pmax