e. atkin, e. malankin, v. shumikhin nrnu mephi, moscow 1
TRANSCRIPT
![Page 1: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/1.jpg)
1
ANALOG FRONT-END CHIP FOR GEM DETECTORS
E. Atkin, E. Malankin, V. ShumikhinNRNU MEPhI, Moscow
![Page 2: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/2.jpg)
2
OUTLINE
GEM Chip structure Channels structure Test benches Experimental data Summary
![Page 3: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/3.jpg)
3
GEM DETECTORS
Cross-section of a triple GEM detector
P. Abbon et al. / NIM (2007) 455–518
~50 µm
![Page 4: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/4.jpg)
4
CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
![Page 5: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/5.jpg)
5
CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
![Page 6: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/6.jpg)
6
CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
~1 million channels
↓~15 000 ASICs x
64 ch.
![Page 7: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/7.jpg)
7
CBM
Muon system of the international CBM experiment, being designed on the new accelerator facilities at FAIR GSI (Darmstadt, Germany), built on the base of the gaseous detector of high resolution. Muon System consists of about 1 million channels. For the Muon System signals read-out ASIC application is neccesary.
~1 million channels
↓~15 000 ASICs x
64 ch.
Front-end forMUCH
![Page 8: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/8.jpg)
8
SPECIFICATIONS
Input signal range of 1.5-100 fC Charge polarity – negative ENC – less than 0.3 fC Detector capacitance up to 100 pF Maximum hit rate/channel – 2 MHz Power consumption – 2 mW/ch
![Page 9: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/9.jpg)
9
CHIP STRUCTURE
1.5 CSA + stand alone Shaper channels (Preamp ver. 1)
2.5 CSA channel with built-in shaping (Preamp ver. 2)
3.OpAmp block
4.Digital test structures
![Page 10: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/10.jpg)
10
CHANNEL STRUCTUREPREAMP VER.1
![Page 11: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/11.jpg)
11
CSA CORE
• Input transistor – nMOS (7mm * 360 nm) • Common source stage• Folded boost current amplifier • Output source follower
Feedback: gain setting cap + discharge transistor to set the maximum hit rate of channel not less than 2 MHz
![Page 12: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/12.jpg)
12
SHAPER
Noninverting 2nd order
Sallen-Key filter
The shaper has two additional adjustments:- TAIL – tail cancellation- SH_BL – baseline tuning
![Page 13: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/13.jpg)
13
PREAMPVER.2
• Input transistor – nMOS (4mm * 360 nm) • Common source stage• Folded boost current amplifier • Output source follower
Feedback: gain setting cap + discharge resistor to set the maximum hit rate of channel not less than 2 MHz
![Page 14: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/14.jpg)
14
CHIP LAYOUT
• CLCC68 Package
• Die–1525 x 1525 μm2
• UMC 180 nm CMOS
MMRF process
• 2012 run of
Europractice
![Page 15: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/15.jpg)
15
TESTBOARD
CLCC Socket
LDO regulato
r
1 pF capacita
nce
Detector capacita
nce emulatio
n
![Page 16: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/16.jpg)
16
TESTBOARD
CLCC Socket
LDO regulato
r
1 pF capacita
nce
Detector capacita
nce emulatio
n
Reference potentiome
ters
![Page 17: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/17.jpg)
17
OUTPUT RESPONSES (VER.1)
Input charge swept from 25 to 70 fC
CSA CSA & Shaper
Shaper
CSA
Voltage pulser
![Page 18: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/18.jpg)
18
TRANSFER FUNCTION (VER.1)
• Dynamic range – 1.5 – 100 fC• Integral nolinearity ~ 4%
ShaperChannel gain ~ 6
mV/fC
CSACSA gain ~ 2.5
mV/fC
![Page 19: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/19.jpg)
19
RMS NOISE MEASURMENTS (VER.1)
Aim: Cin >> Cdet
Estimation: CSA open-loop gain ≥ 1400
![Page 20: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/20.jpg)
20
CSA OUTPUT RESPONSE & TRANSFER FUNCTIONVER.2
transfer functionCSA gain ~ 5 mV/fCCSA output
![Page 21: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/21.jpg)
21
NOISE ESTIMATION
PreAmp (ver. 1)ENC – 875е Cdet = 1p 2427e Cdet = 100p
PreAmp (ver. 2)ENC – 1070е Cdet = 1p 2500e Cdet = 100p
![Page 22: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/22.jpg)
22
TESTBOARD WITH GEM*
Socket with Chip
GEM Anode
Pad area 5x5 mm2
Pad capacitance 12 pF
Gas chamber
with Ar/CO2 *Testboard designed by PNPI
team
![Page 23: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/23.jpg)
23
TESTS WITH 55FE SOURCE*
55 Fe amplitude spectrum, obtained
by the preamplifier & GEM.
*tests provided by PNPI team
Preamplifier output
![Page 24: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/24.jpg)
24
SUMMARY Designed and prototyped 2 versions of read-out with preliminary CBM MUCH specifications:
Preamplifier (ver.1)
Preamplifier (ver. 2)
Gain 6 mV/fC; 5 mV/fC
Input signal range
1.5-100 fC; 1.5-100 fC;
Maximum channel rate
2 MHz 2 MHz
Power consumption
1.2 mW/channel 2 mW/channel
ENC Cdet = 1p Cdet = 100p
875е 2427e
1070е2500e
Area on chip 1050 x 100 µm 200 x 100 µm
![Page 25: E. Atkin, E. Malankin, V. Shumikhin NRNU MEPhI, Moscow 1](https://reader035.vdocument.in/reader035/viewer/2022062407/56649cc15503460f9498919c/html5/thumbnails/25.jpg)
25
THANKS FOR YOUR ATTENTION...