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ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University [email protected]

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Page 1: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

ECE 474:Principles of Electronic Devices

Prof. Virginia AyresElectrical & Computer EngineeringMichigan State [email protected]

Page 2: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Lecture 02:

Chapter 01

How to quantify physical structures of crystal systems that are important for devices:

Cubic systems: bcc, fcc, diamond, zinc-blendeNumber of atoms in unit cellLattice constant aPacking fractionNearest neighbor distancesDensity

Examples of each

Page 3: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

.

The Nobel Prize in Physics 2010

Graphene

Carbon nanotubes

Why quantify:The physical structure is the environment through which current

travels in a deviceThe current interacts seriously with its environment

Page 4: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

.

The Nobel Prize in Physics 2010

Graphene

Carbon nanotubes

Cubic systems: basic repeat pattern can be described within an imaginary cube of side a. Side a (in nm) is called the “lattice constant”.

a

Page 5: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

.

The Nobel Prize in Physics 2010

Graphene

Carbon nanotubes

Cubic systems:

Page 6: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

.

The Nobel Prize in Physics 2010

Graphene

Carbon nanotubes

Cubic systems: traditional semiconductors and many metals.

Copper,Aluminum

Silicon Gallium Arsenide

Page 7: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Repeat unit = “Unit Cell”.Stack many Unit Cells to make a crystalExample from book: bcc (chromium, cobalt)

Point: to stack Unit Cells sideways or up to make a crystal, you need to have the atoms in the box.

Page 8: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the imaginary box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Page 9: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: Cr (bcc)

8 x 1/8 = 10 x ½ = 01 x 1 = 1Atoms in box = 2

Page 10: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: Cu (fcc)

Page 11: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: Cu (fcc)

8 x 1/8 = 16 x ½ = 30 x 1 = 0Atoms in box = 4

Page 12: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: Si (D)

Page 13: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: Si (D)

8 x 1/8 = 16 x ½ = 34 x 1 = 4Atoms in box = 8

Page 14: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: GaN (ZB)

8 x 1/8 = 16 x ½ = 34 x 1 = 4Atoms in box = 8

Page 15: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: GaN (ZB)Number of Ga :8 x 1/8 = 16 x ½ = 30 x 1 = 0Ga Atoms in box = 4

Page 16: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: GaN (ZB)Atoms in box = 8

Ga Atoms in box = 4N Atoms in box = 4

50:50% Ga and N

The proportions are called the Composition or Stoichiometry

Page 17: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Correctly counting atoms in the box:

Corner atom: 1/8 atom IN boxFace atom: ½ atom IN boxInside atom: 1 atom IN box

Example: AlN (ZB)Atoms in box = 8

Al Atoms in box = 4N Atoms in box = 4

50:50% Al and NThe proportions are called the Composition or Stoichiometry

Page 18: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Example of Composition (or Stoichiometry):

Example: AlGaxN1-xAtoms in box = ?

Al Atoms in box = ? N Atoms in box = ?Ga Atoms in box = ?

Ternary and Quaternary structuresWhy: increased options for lattice matching

Composition: find x and fill in: AlGaxN1-x

Page 19: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Example of Composition (or Stoichiometry):

Example 01: AlGaxN1-xAtoms in box = 8

Al Atoms in box = 8(1/8) + 6(1/2) =4 N Atoms in box = 3(1) = 3Ga Atoms in box = 1(1) =1

Ternary and Quaternary structuresWhy: increased options for lattice matching

Composition: Al4Ga1N3 written as: AlGa0.25N0.75

Page 20: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Example of Composition (or Stoichiometry):

Example 02: AlGaxN1-xAtoms in box = 8

Al Atoms in box = 8(1/8) + 6(1/2) =4 N Atoms in box = 2(1) = 3Ga Atoms in box = 2(1) =1

Ternary and Quaternary structuresWhy: increased options for lattice matching

Composition: AlGa0.5N0.5

Page 21: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Cubic Systems:

1. Atomic arrangements

2. Sizes of the box “a”

“a” = “lattice constant”

Page 22: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Page 540

Also see Ashcroft & Mermin, Solid State Physics

Page 23: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

SiO2

Si

Doped polySi

Cu Cu

n n

Page 24: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

n nSi

Cu Cu

Cufcca =3.61 Ang

SiDiamonda = 5.43 Ang

Lattice mis-match at interface

Page 25: ECE 474: Principles of Electronic Devices · ECE 474: Principles of Electronic Devices Prof. Virginia Ayres Electrical & Computer Engineering Michigan State University ayresv@msu.edu

V.M. Ayres, ECE474, Spring 2011

Can get lattice matching between semiconductors by using a ternary or a quaternary: