edge placement error analysis for n7 logic patterning...
TRANSCRIPT
![Page 1: Edge placement error analysis for N7 logic patterning optionseuvlsymposium.lbl.gov/pdf/2015/Oral_Monday/Session2...2015 International Symposium on Extreme Ultraviolet Lithography,](https://reader034.vdocument.in/reader034/viewer/2022042308/5ed410dc8d46b66d22636435/html5/thumbnails/1.jpg)
2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Edge placement error analysis for N7 logic patterning options
Oct-05-2015 ASML: Eelco van Setten, Eleni Psara, Friso Wittebrood, Dorothe Oorschot, Joep van Dijk, Guido Schiffelers, Jo Finders, Mircea Dusa IMEC: Vicky Philipsen, Eric Hendrickx
2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Slide 2
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On the edge
or over the edge…
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Slide 3
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On the edge
or over the edge…
Photo: WFAA.Com Photo:nbcdfw.com
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Edge Placement Error combines all CD and OVL errors
Design intent
After patterning
EP tolerance Y
EP tolerance X
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Slide 5
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Edge Placement Error combines all CD and OVL errors
EPEinter= (𝟑𝛔)𝐎𝐕𝐋,𝐢𝐧𝐭𝐞𝐫𝟐 +
𝟑𝛔𝐂𝐃𝐔𝐥𝐢𝐧𝐞𝐬
𝟐
𝟐
+𝟑𝛔𝐂𝐃𝐔𝐜𝐮𝐭𝐬
𝟐
𝟐
EPEintra= (𝟑𝛔)𝐎𝐕𝐋,𝐢𝐧𝐭𝐫𝐚𝟐 +
𝟑𝛔𝐂𝐃𝐔𝐥𝐢𝐧𝐞𝐬
𝟐
𝟐
+𝟑𝛔𝐂𝐃𝐔𝐜𝐮𝐭𝐬
𝟐
𝟐
EPElocal= (𝟔𝛔)𝐋𝐏𝐄𝟐 +
(𝟔𝛔)𝟐𝐋𝐖𝐑𝐥𝐢𝐧𝐞𝐬
+(𝟔𝛔)𝟐𝐋𝐂𝐃𝐔𝐜𝐮𝐭𝐬
𝟐
EPEmax = EPEinter + EPEintra + EPElocal
die
die
die
die
die
…….
Uncorrelated edges
EPEglobal
EP tolerance Y
EP tolerance X
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Slide 6
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Main overlay and CD error sources
Overlay errors
CD errors
Machine overlay
Image placement
Mask registration
Pattern transfer
Litho cluster CDU
OPC residuals
Mask CDU
Pattern transfer
Global (die/wfr scale) Local (pitch scale)
E-beam/resist stochastics
Resist/etch stochastics
E-beam/resist stochastics
Resist/etch stochastics
LCDU/resist stochastics
LPE/resist stochastics
die
die
die
die
die
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Slide 7
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Contents
Edge Placement Error
Patterning options for N7
Overlay errors
CD errors
Summary & conclusions
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Design options for critical N7 Logic Metal layers
Uni-directional (1D) M1 Bi-directional (2D) M1
• Design freedom
• Design restrictions
• Additional layers required
• Litho friendly
BUT…
• Challenging for litho
BUT…
Complementary litho: 1D direct print / 2D direct print
ArFi SAQP EUV cut/block
+ =
EUV EUV
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Evaluation done on NXE:33x0B EUV scanner NXE:33x0B
NA 0.33
Illumination Conventional 0.9s,
6 off-axis pupil settings
Tip-to-tip (T2T)
Cut/block 1D direct print / 2D direct print
Staggered CHs (Irregular) cuts
Y. Borodovsky, Intel, 2012 Int’l
Workshop on EUVL, Maui, Hi
Goal: Compare relative performance using EPE model
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Contents
Edge Placement Error
Patterning options for N7
Overlay errors
CD errors
Summary & conclusions
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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MMO:
• X = 2.0 nm
• Y = 2.2 nm
DCO:
• X = 1.0 nm
• Y = 0.6 nm
NXE:3350: 2.0nm Matched Machine OVL and 1.0nm
Dedicated Chuck OVL demonstrated
On-product overlay NXE:3300B to NXT:1960Bi:
measured = 5-nm, correction towards 4‐nm possible
NXE:3350B: OPO < 3.5nm expected, to be demonstrated
NXE:3350B
Source P ~ 60-
80W
MMO
Jan Mulkens et al, SPIE 2015
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
-0.5
0
0.5
1
1.5
-100 -50 0 50 100
Cut-X Annular
Cut-Y Annular
Cut-X Conv
Cut-Y Conv
Pla
cem
en
t Er
ror
[nm
]
Focus[nm]
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Image placement errors through focus can be minimized
by mask and pupil optimization
For more details see ‘Experimental verification of phase induced M3D effects in EUV imaging’ – Friso Wittebrood
M3D simulation 21/22nm HP cuts
Annular Conventional
Cut-X
Cut-Y
-0.5
0
0.5
1
1.5
-100 -50 0 50 100
Trench Dip90Y
Trench FlexPupil
Gap Dip90Y
Gap FlexPupil
Pla
cem
en
t Er
ror
[nm
] Focus[nm]
Dip90Y FlexPupil
M3D simulation T2T @ 16nm HP
Gap Trench
Pattern placement aware SMO, ‘EUV Reticle Enhancement Techniques for k1 0.4 and below’ SPIE 2015 – Stephen Hsu et al
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Local Placement Error on mask gives systematic
overlay error at pitch scale
Pitch scale
Mask local placement error:
Deviation from designed position at pitch scale
Method:
• Measure center of gravity for 9x9 cuts within array (CD SEM) • Average over ~64 fields ~ 8x noise reduction
• Calculate distance in X/Y between cuts
• Calculate delta w.r.t. design distance (pitch)
• Calculate 3σ over rel. X/Y placement error
Δ=0.5 Δ=-1.1
Δ=-0.5 Δ=0.8
Δ=0.7 Δ=-0.1 Δ=0.1
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Systematic Local Placement Error (mask) ~
1.0nm for both CHs/ cuts and T2T
0.0
0.5
1.0
1.5
2.0
22p44 staggeredCHs
21/22nm HP cuts
X
Y
LPE
[nm
3σ
; 1
x]
Mask LPE for CHs and cuts
0
0.5
1
1.5
2
12 20
22p44 T2T
LPE
[nm
3σ
; 1
x]
Design gap [nm; 1x]
Mask LPE of T2T gap
Derived from wafer measurements
Pitch scale
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Contents
Edge Placement Error
Patterning options for N7
Overlay errors
CD errors
Summary & conclusions
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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NXE:3350: 0.6nm FWCDU demonstrated for horizontal
16nm HP L/S and 20nm iso trenches
16nm dense L/S 20nm iso trenches
CDU CD FW CDU IF CDU
H line 16.1nm 0.6nm 0.5nm
CDU CD FW CDU IF CDU
H trench 21.0nm 0.6nm 0.4nm
Reticle and shadowing error corrected
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Good CD control for both cut and T2T features Cut-X CDU is 1.0nm 3σ
CD (X/Y) FW CDU
(X/Y)
IF CDU
(X/Y)
21.9nm
71.3nm
1.0nm
2.0nm
0.8nm
1.6nm
CDU 21/22nm HP cuts
NXE:3350B
X-cut Y-cut
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Good CD control for both cut and T2T features Cut-X CDU is 1.0nm 3σ
CD FW CDU IF CDU
30.9nm 2.9nm 2.2nm
CDU T2T @ 16nm HP
NXE:3300B NXE:3350B
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
120
22p44CHS
Feat -1 Feat -2 Feat -3 Feat -4
Mean X Mean YFW CDU X FW CDU YIF CDU X IF CDU Y
CD
[n
m]
CD
U [
nm
3σ
]
CDU 21/22nm HP cuts
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
0
2
4
6
8
10
22p44CHS
Feat -1 Feat -2 Feat -3 Feat -4
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Cuts show better LCDU performance than line ends
0
2
4
6
8
10
12 14 16 18 20 25 30
Meas
Sim
LGU
[n
m 3σ
]
Design gap [nm; 1x]
LCDU 21/22nm HP cuts LGU for T2T – 16nm HP
LCD
U [
nm
3σ
]
Pitch scale
Estimated SEM contribution ~ 3nm 3σ
LCDU Diameter
Estimated SEM contribution ~ 1nm 3σ
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Local CDU can be minimized by maximizing contrast
LCDU CH data LGU T2T data
0
5
10
15
20
8 18 28 38
p32 - DY90
p40 - Q45
p44 - Q45
LGU
[n
m 3σ
] 1/ILS [nm]
NXE:3300 CAR data
High contrast Low contrast
𝐿𝐺𝑈 𝑛𝑚 ~ 0.35
𝐼𝐿𝑆+ 1.5
0.0
1.0
2.0
3.0
4.0
5.0
0.10 0.20 0.30 0.40 0.50 0.60
20
22
24
30
35
High contrast Low contrast
𝐿𝐶𝐷𝑈 𝑛𝑚 ~6.6
𝑁𝐼𝐿𝑆+ 1.1
NXE:3300 CAR data HP (nm)
1/NILS [-]
LCD
U [
nm
3σ
]
Data courtesy: Sander Wuister, ASML
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
0
5
10
15
20
5 15 25 35
p32 - DY90
p40 - Q45
p44 - Q45
CH - All data
LCD
U /
LG
U [
nm
3σ
]
1/ILS [nm]
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Local CDU can be minimized by maximizing contrast
LCDU CH and LGU T2T data
NXE:3300 CAR data
High contrast Low contrast
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
12 13 14 15 16 17 18 19 20 21 22
0.33NA 38% PFR
0.33NA 20% PFR
NXE:33x0
NXE:3400
L/S HP [nm]
NIL
S [-
]
Horizontal L/S
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Contrast optimization by OPC, pupil and absorber
optimization
BF shift & Bossung tilt
Pa
rtly
fa
din
g
Laurens de Winter et al. EMLC 2015
Contrast optimization:
• Pupil optimization: • Pupil fill ratio NXE:33x0 = 38%
• Pupil fill ratio NXE:3400 = 20%
• OPC / SMO, eg. SRAFs
• Mask stack optimization Resolution enhancement
Stephen Hsu et al. SPIE 2015
No AF
With AF
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Contents
Edge Placement Error
Patterning options for N7
Overlay errors
CD errors
Summary & conclusions
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Main EPE contributors are Local CDU and on product OVL
• Process / etch optimization expected to reduce Local CDU up to
30-50% for CHs/cuts and 10-30% for line ends
Main contributors to EPE budget (after litho)
Cut (X/Y) T2T
OPO (TBC) [nm 3σ] ~3.5 ~3.5
LPE [nm 6σ] ~2.0 / 2.4 ~2.4
CDU/2 [nm 3σ] ~0.5 / 1.0 ~1.45
LCDU/2 [nm 6σ] ~4 ~8
EPEglobal= (𝟑𝛔)𝐎𝐕𝐋𝟐 +
𝟑𝛔𝐂𝐃𝐔𝐥𝐢𝐧𝐞𝐬
𝟐
𝟐
+𝟑𝛔𝐂𝐃𝐔𝐜𝐮𝐭𝐬
𝟐
𝟐
EPElocal= (𝟔𝛔)𝐋𝐏𝐄𝟐 +
(𝟔𝛔)𝟐𝐋𝐖𝐑𝐥𝐢𝐧𝐞𝐬
+(𝟔𝛔)𝟐𝐋𝐂𝐃𝐔𝐜𝐮𝐭𝐬
𝟐
die
die
die
die
die
Cut (X/Y) T2T
OPO (TBC) [nm 3σ] ~3.5 ~3.5
LPE [nm 6σ] ~2.0 / 2.4 ~2.4
CDU/2 [nm 3σ] ~0.5 / 1.0 ~1.45
LCDU/2 [nm 6σ] ~4 ~8
LCDU/2 [nm 6σ] AEI ~2-3 ~5.5-7
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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Conclusions
EPE model:
• Includes overlay and CD errors at global and local scale
• Allows balancing of overlay and (L)CDU requirements
EPE model used to compare relative performance difference for cutmask and tip-to-tip:
• Local CDU and on-product OVL dominate the EPE budget
• Local gap uniformity more difficult to control than local CDU of contacts and cuts driven by contrast (ILS)
OPC/ SMO, pupil and mask stack optimization are powerful knobs to improve:
• Contrast LCDU reduction
• Placement errors through focus OPO reduction
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
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The authors would like to thank:
• NXE Applications team
• Thijs Hollink
• Vidya Vaenkatesan
• Cheuk-Wah Man
• John McNamara
• Frank Horsten
• Rik Hoefnagels
• Marieke Meeuwissen
• Kees Ricken
• Others
• Sander Wuister
• Leon Levasier
• Marcel Beckers
• Martien de Rooij
• Martin Verhoeven
• Pieter Woltgens
• Jan Mulkens
• Gian Lorusso
• Lieve Van Look
• Dan Corliss
• NXE simulation team
• Gijsbert Rispens
• Paul Colsters
• Laurens de Winter
• Kateryna Lyakhova
• Cemil Kaya
• Gerardo Bottiglieri
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2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, NL
Thank you for your
attention !