ee 232 lightwave devices lecture 9: optical matrix element
TRANSCRIPT
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EE232 Lecture 9-1 Prof. Ming Wu
EE 232 Lightwave Devices Lecture 9: Optical Matrix Element,
k-Selection Rule, Quantum Well Gain / Absorption
Instructor: Ming C. Wu
University of California, Berkeley Electrical Engineering and Computer Sciences Dept.
EE232 Lecture 9-2 Prof. Ming Wu
Bloch Function
• Bloch function – Electron wavefunction
in a periodic potential can be expressed as a product of a periodic function and a slowly varying plane wave envelop function
Atom
Periodic Potential
a =ψa (r!) = uv (r
!) e
ik!v ⋅r!
V
b =ψb(r!) = uc (r
!) e
ik!c⋅r!
V
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EE232 Lecture 9-3 Prof. Ming Wu
Optical Matrix Element
Hba' = b −
eA02m0
e! ⋅P"##
$%%
&
'(( a = −
eA02m0
e! ⋅ b P"#a = −
eA02m0
e! ⋅P"#ba
Electron wavefunction can be expressed in Bloch functions:
a =ψa (r!) = uv (r
!) e
ik!v ⋅r!
V; b =ψb(r
!) = uc (r
!) e
ik!c⋅r!
V
Hba' = −
eA02m0
e! ⋅ b P"#a = −
eA02m0
e! ⋅ uc*(r!)∫ e−i k
!v ⋅r!
eik!op⋅r!
−i"∇( )uv (r!)eik!v ⋅r! d 3rV
= −eA02m0
e! ⋅ uc*(r!)∫ e−i k
!c⋅r!
eik!op⋅r!
−i"∇( )uv (r!)+ (−i!k
"v )uv (r!)+
,-.e
ik!v ⋅r! d 3rV
= −eA02m0
e! ⋅ uc*(r!)∫ −i!∇( )uv (r
!) d
3rΩ
e−i k!c⋅r!
eik!op⋅r!
∫ eik!v ⋅r! d 3rV
= −eA02m0
e! ⋅ p"#cv ⋅δk
!c ,k!op+k!v
k-Selection Rule
Matrix element of periodic function over unit cell
Slowly Varying Envelop Approx
EE232 Lecture 9-4 Prof. Ming Wu
Optical Matrix Element for Quantum Wells
a =ψa (r!) = uv (r
!) e
ik!t ⋅ρ!"
Agm(z)
b =ψb(r!) = uc (r
!) e
ik!t '⋅ρ!"
Aφn (z)
Hba' = −
eA0
2m0
e! ⋅ b P!"a
= −eA0
2m0
e! ⋅ p!"cv ⋅δk
!t ,k!t '⋅ Ihmen
Ihmen = φ*
n (z)gm(z)dz−∞
∞
∫
Overlap integral of QW envelop wavefunctionsIhmen = δmn for infinite potential well
Quantum Well Wavefunction
Atomic Wavefunction
Envelop Wavefunction
Slowly Varying Envelop
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EE232 Lecture 9-5 Prof. Ming Wu
Interband Transitions in Quantum Wells (1)
0V =∞
0x = x L=
xk
yk
E
1eE
2eE
1hE
2hE
Allowed Transition
22ehE
11ehE
ωh
1 21 2
Only transition from m=1 hole subband to n=1 electron subband is allowed
e eh hE Eω< <h
EE232 Lecture 9-6 Prof. Ming Wu
Interband Transitions in Quantum Wells (2)
0V =∞
0x = x L=
xk
yk
E
1eE
2eE
1hE
2hE
Allowed Transition
22ehE
11ehE ωh
!ω > Eh2e2
m=1 → n=1m=2 → n=2
"#$
Since the density of states for each subband is the same, the maximum optical gain is twice of that of a single-band transition
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EE232 Lecture 9-7 Prof. Ming Wu
Optical Gain for Interband Transition in Quantum Wells
g(!ω) =C0 e! ⋅P!"cv
2
ρr2d (!ω) fg (!ω)
ρr2d (E) =
mr*
π!2LzH (E − Ehn
en )n=1
∞
∑
fg (!ω) = fC Een + !ω − Ehnen( )mr
*
me*
!
"##
$
%&&− fV −Ehm − !ω − Ehn
en( )mr*
mh*
!
"##
$
%&&
For more general case:
⇒ g(!ω) =C0 e! ⋅P!"cv
2
Ihmen 2 ρr
2dH (!ω − Ehmen )
m,n∑ fg (!ω)
ρr2d =
mr*
π!2Lz
EE232 Lecture 9-8 Prof. Ming Wu
Quantum Well Gain
1.4 1.6 1.8 2 2.2 2.4 2.61−
0.5−
0
0.5
1
f_g xi 0.05eV, ( )f_g xi 0.1eV, ( )f_g xi 0.15eV, ( )f_g xi 0.2eV, ( )f_g xi 0.25eV, ( )f_g xi 0.3eV, ( )f_g xi 0.35eV, ( )f_g xi 0.4eV, ( )f_g xi 0.45eV, ( )
xieV
1.4 1.6 1.8 2 2.2 2.4 2.6
1− 106×
0
1 106×g xi 0.05eV, ( )g xi 0.1eV, ( )g xi 0.15eV, ( )g xi 0.2eV, ( )g xi 0.25eV, ( )g xi 0.3eV, ( )g xi 0.35eV, ( )g xi 0.4eV, ( )g xi 0.45eV, ( )
xieV
Fermi Inversion
Factor
Gain
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EE232 Lecture 9-9 Prof. Ming Wu
Solving Quasi-Fermi Level in Quantum Well
Electron concentration:
N = dEρe2d (E) fC
n∫ (E)
ρe2d (E) = me
*
π!2LzH (E − Een )
n=1
∞
∑
fCn (E) = 1
1+ eEen+Et−FCkBT
Use dx1+ ex∫ = −ln(1+ e−x )
N =n∑ me
*kBTπ!2Lz
ln 1+ eFC−EenkBT
%
&
''
(
)
**
For large quasi-Fermi Energy:FC ≫ Een
ln 1+ eFC−EenkBT
"
#
$$
%
&
''≈FC − EenkBT
N =n∑ me
*
π!2LzFC − Een( )
For small quasi-Fermi Energy:FC ≪ Een
ln(1+ eFC−EenkBT ) ≈ e
FC−EenkBT = e
−Een−FCkBT
N =me*kBT
π!2Lze−Ee1−FCkBT = NCe
−Ee1−FCkBT