ee152 green electronics - stanford...
TRANSCRIPT
EE152 Green Electronics
Power Devices10/3/16
Prof. William DallyComputer Systems Laboratory
Stanford University
Course Logistics• HW1 due Today
– Put in box outside Sue’s office (G301) by 10AM tomorrow• HW2 out Today due Monday 10/3• Lab1 signed off this week - individually• Lab2 out - group• Lab groups and signups nearly final• Sign up for Piazza
EE155/255 Lecture 3 - Power Devices
Course to Date• We need sustainable energy systems• At the core they are voltage converters• Periodic steady-state analysis, buck and boost• Intelligent control + power path• Intelligent control done with event-driven embedded software• Real devices – finite voltage, on resistance, switching time
EE155/255 Lecture 3 - Power Devices
Today• Power Devices
EE155/255 Lecture 3 - Power Devices
Real Switches
EE155/255 Lecture 3 - Power Devices
L
V2
iLV1
+-
a
b
R
C
+
_
M1
M2
V1
High-SideGate Drive
Low-SideGate Drive
VGL
VGH
inH
inL
GND
X
G1
G2
Real Switches• Finite switching time• Finite voltage blocking• Non-zero on resistance• Parasitic L and C
EE155/255 Lecture 3 - Power Devices
L
V2
iLV1
+-
a
b
R
C
+
_
M1
M2
V1
High-SideGate Drive
Low-SideGate Drive
VGL
VGH
inH
inL
GND
X
G1
G2
Quick Summary in a Few Pictures
EE155/255 Lecture 3 - Power Devices
DC I-V Characteristics of On Switches
V(d)0.0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V 1.1V 1.2V 1.3V 1.4V 1.5V 1.6V 1.7V 1.8V 1.9V 2.0V
0A
5A
10A
15A
20A
25A
30A
35A
40A
45A
50AIx(m:1) Ix(h:2) Ix(i:C) I(Dd)
600V FETFCB36N60
600V IGBTFGH40N60
400V DiodeSTTH20R04
60V FETIRLB3036
FETs CharacterizedBy RON
IGBT Like a DiodeLittle Current Until ~0.7V
HV FET has high RONR ~ kV2
Diode and IGBTResistive at high Current
EE155/255 Lecture 3 - Power Devices
Boost Configuration for Transient Test
EE155/255 Lecture 3 - Power Devices
Transient Response of FET and IGBT
0ns 40ns 80ns 120ns 160ns 200ns 240ns 280ns 320ns0V
50V
100V
150V
200V
250V
300V
350V
400V
450V
500V
550V
0A
5A
10A
15A
20A
0V
50V
100V
150V
200V
250V
300V
350V
400V
450V
500V
550V
0A
5A
10A
15A
20A
0KW
1KW
2KW
3KW
4KW
5KW
6KW
7KW
8KW
9KW
10KW
V(di) Ix(i:C)
V(dm) Ix(h:2)
ix(i:c)*v(di) ix(h:2)*V(dm)
600V FETFCB36N60
InstantaneousPower
Turn On Turn Off
600V IGBTFGH40N60
36µJ 36µJ92µJ 428µJ
EE155/255 Lecture 3 - Power Devices
Power MOSFETs
EE155/255 Lecture 3 - Power Devices
Power MOSFETs are your friends
EE155/255 Lecture 3 - Power Devices
MOSFET Properties• Fast switching time 10-50ns
– Low switching losses• Low conduction losses at low voltages
– V2/R of 1-2MW • e.g., at 20V R = 0.4mOhm (4mV drop at 10A)
– Typically better than IGBT up to ~400V• Easily paralleled for lower Ron, More I, or easier cooling• Integral body diode in DMOS FET• Avalanche breakdown can be used to “snub” overshoot
EE155/255 Lecture 3 - Power Devices
MOSFETs are Switches
Gate
Drain
Source
Drain
Source
GateRon
Dbody
(a) (b)
EE155/255 Lecture 3 - Power Devices
(a)
gaten n
p
VDS
(b)
gaten n
p
VDS
- - - - -
IDS
g=0 g=1
IDSg
s d
g
s dIDS=0
+
−
+
−
How do they Work
VGS
EE155/255 Lecture 3 - Power Devices
Power MOSFET (DMOS) Structure
n+
p+n+
n-
p+n+
gatesource source
drain
channel
EE155/255 Lecture 3 - Power Devices
Gate Charge vs VGS
EE155/255 Lecture 3 - Power Devices
0 10 20 30 40 50 60 70 80 900
1
2
3
4
5
6
7
8
9
10
QG (nC)
V GS (V
)
CDG
LS
LGRG
LD
CDS
CGS
source
gate
drain
Parasitics
EE155/255 Lecture 3 - Power Devices
130 Green Electronics
CDG
LS
LGRG
LD
CDG
CGS
source
gate
drain
Figure 17.4: MOSFET parasitic circuit elements. At high operating frequen-cies these parasitic circuit elements have a large e↵ect on the performance andswitching losses of a MOSFET.
Symbol Value Units DescriptionCDS 200 pF Drain-source capacitanceCDG 70 pF Drain-gate (Miller) capacitanceCGS 3600 pF Gate-source capacitanceQG 86 nC Total gate turn-on chargeQGD 35 nC Gate-drain turn-on chargeLS 7 nH Source inductanceLD 3 nH Drain inductanceLG 7 nH Gate inductanceRG 1.5 ⌦ Gate resistance
Table 17.1: Values of parasitic circuit elements for a typical 600V 100m⌦ powerMOSFET in a TO-220 package.
600V 0.1W FET TO220 Package
CDG
LS
LGRG
LD
CDS
CGS
source
gate
drain
Parasitics
EE155/255 Lecture 3 - Power Devices
CDS – CV2 energyLD, LS – I2L energy
slows switching, overshoot,corrupts gate drive
CDG – slows turn onRG, LG – slow device turn-on
EE155/255 Lecture 3 - Power Devices
Typical MOSFETs
EE155/255 Lecture 3 - Power Devices
Copyright
(c)
2011-15
by
W.J
Dally,allrights
reserved
133
Device 20V IRLB3036 IRFB4227 FCB36N60N EPC2010 C2M0025120 Units DescriptionVDSmax
20 60 200 600 200 1200 V Maximum VDS
Ron
1.9 20 81 18 25 m⌦ On resistanceQG 91 70 86 5 161 nC Gate chargeCoss 1020 460 80 270 220 pF Output capacitance CSD + CGD
IDmax
195 65 36 12 90 A Maximum continuous drain currentIDM 1100 260 108 60 250 A Maximum pulsed drain currentEAS 290 140 1800 mJ Single-event avalanche energyP
max
380 330 312 463 W Maximum power dissipationV 2/R 1.9 2.0 4.4 2.2 58 MW Figure of meritV 2/RQG 21 29 52 440 360 mV/s Figure of merit
Table 17.2: Key parameters of six field-e↵ect transistors.
GaN SiC
Power MOSFETs should be ON or OFFThey are not happy in between
• IRLB3036 • Can handle 60V (when its off)• Can handle 195A (when its on – if you can cool it)
– I2R = (195)2(0.002) = 76W• But it can’t handle 60V and 195A at the same time
– P = VI = (60)(195) = 11.7kW– At least not for very long
• Turn them on and off quickly• Best circuits are “soft switching”
– Zero-current switching (ZCS) or zero-voltage switching( ZVS) or both.
EE155/255 Lecture 3 - Power Devices
Power Diodes
EE155/255 Lecture 3 - Power Devices
Diode Properties• Self-controlling switch
– Allows current in one direction– Turns off when current reaches zero (in theory)
• Relatively fixed voltage drop independent of current– 0.5 to 2.0V– High losses at low voltages
• Care required to operate in parallel– Current hogging
• Turn-off delay– Must clear space charge out of junction
• Turn-on delay– Negligible for most fast diodes, but some are problematic
EE155/255 Lecture 3 - Power Devices
Key Parameters• Reverse breakdown voltage
• Maximum current
• Reverse recovery time
• Junction capacitance
EE155/255 Lecture 3 - Power Devices
Diode Reverse Recovery
EE155/255 Lecture 3 - Power Devices
I1
IRM
ta tb
trr
Qrr
iD
(Amps)
t(sec)t1
t2
t3
”Softness” of recovery
Diode Reverse Recovery
0ns 3ns 6ns 9ns 12ns 15ns 18ns 21ns 24ns 27ns 30ns-220A
-200A
-180A
-160A
-140A
-120A
-100A
-80A
-60A
-40A
-20A
0A
20A
40AI(D1) I(D2) I(D3) I(D4)
0ns 10ns 20ns 30ns 40ns 50ns 60ns 70ns 80ns 90ns 100ns 110ns 120ns-810A
-720A
-630A
-540A
-450A
-360A
-270A
-180A
-90A
0A
90A
180AI(D1) I(D2) I(D3) I(D4) I(D5) I(D6) I(D7)
400V DiodeSTTH20R04
Medium Speed Diode
Area under curve (Charge)is approximately constant QRR
EE155/255 Lecture 3 - Power Devices
Diode Forward Recovery
EE155/255 Lecture 3 - Power Devices
VFP
VF
tfr
vD
(Volts)
t(sec)
1.1VF
Diode Forward Recovery
Good Diode Bad Diode
EE155/255 Lecture 3 - Power Devices
Two 2A Diodes < One 4A Diode
EE155/255 Lecture 3 - Power Devices
0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95 1 1.05 1.10
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
25°C
75°C
125°C
VD (Volts)
i D (A
mps
)
CDG
LS
LGRG
LD
CDS
CGS
source
gate
drain
Summary – Power Devices• Finite, non-zero
– Switching time– Blocking voltage– On-voltage (resistance)
• Parasitics – L and C• MOSFETs – switches
– Turn on/off as fast as gate can be charged
– R = kV2
• Diodes– Self-controlled switches– Reverse recovery loss QRR
EE155/255 Lecture 3 - Power Devices
Gate
Drain
Source
Drain
Source
Gate RonDbody
(a) (b)
I1
IRM
ta tb
trr
Qrr
iD
(Amps)
t(sec)t1
t2
t3
Power Circuits
EE155/255 Lecture 3 - Power Devices
Practical Buck Converter
EE155/255 Lecture 3 - Power Devices
M1
M2
V1
High-SideGate Drive
Low-SideGate Drive
VGL
VGH
inH
inL
GND
X
G1
G2
Simple Model
EE155/255 Lecture 3 - Power Devices
M1G1
ii
M2
V1
+-
G2
(a)
M1G1
M2G2
V1
+-
(b)
One Switch May be a Diode
EE155/255 Lecture 3 - Power Devices
M1G1
ii
M2
V1+-
G2
(a)
M1G1
M2G2
V1+-
(b)
Lower switch for buck
Upper switch for boost
Other switch does mostof the work
Synchronous rectification may be used to reduce loss
Turn-On Loss
EE155/255 Lecture 3 - Power Devices
IP
ILQRR QD
ID
VDS
s
t1 t2 t3
Turn-OnBuck w/ Diode
IP
ILQRR QD
ID
VDS
s
t1 t2 t3
t1 – ramp current to IL
t2 – diode reverse recovery
t3 – discharge drain capacitance
Current waveform in t2 and t3 may vary
EE155/255 Lecture 3 - Power Devices
Turn-OnBuck w/ Diode
t1 =ILs
E1 = 0.5VDDILt1 =0.5VDDIL
2
s
t2 =2QRR
sE2 =VDDt2 IL + 0.5t2s( )
t3 ≈2IPQD
E3 = 0.5VDDQD + 0.33VDDILt3
IP
ILQRR QD
ID
VDS
s
t1 t2 t3
EE155/255 Lecture 3 - Power Devices
Turn-OffBuck with Diode
Excess current charges drain node.
Integrate to get switching energy
E =VDDtr16IL +
13I1
!
"#
$
%&
ID
VDS
IL
trtc
I1
EE155/255 Lecture 3 - Power Devices
Turn-OffBuck with Diode
If current ramps faster than voltage nearly ZVSID
VDS
IL
tr
tc
V1
E = 16V1ILtc
EE155/255 Lecture 3 - Power Devices
Parasitic Losses
LP
C2
CL
L1D1
M1
C1
EE155/255 Lecture 3 - Power Devices
Switching Loss with SPICE
EE155/255 Lecture 3 - Power Devices
Simulation Setup• Boost configuration 40A, 50V• IRLB3036 – 60V, 2mW FET
EE155/255 Lecture 3 - Power Devices
Ideal Diode, No Parasitics
22uJ turn-on 22uJ turn-off
EE155/255 Lecture 3 - Power Devices
Body Diode of IRLB3036
225uJ turn-on
700A peak currentEE155/255 Lecture 3 - Power Devices
Gate Drive
EE155/255 Lecture 3 - Power Devices
Gate Driver
RGH
RGL
M1
source
drain
Control &Protection+
-VGH
in
Gate-driver IC
SH
SL
EE155/255 Lecture 3 - Power Devices
Effect of Miller Cap on Rise Time
M1
iG
CDG
EE155/255 Lecture 3 - Power Devices
Effect of Miller Cap on Rise Time
M1
iG
CDG
dVDdt
=iGCDG
Δt = ΔVDCDG
iG
Example: i = 0.5A, C = 100pF, DV = 400V
EE155/255 Lecture 3 - Power Devices
Bootstrap Supply
M1
i
M2
V1
+-
High-SideGate Drive
Low-SideGate Drive
VGL
+-
inH
inL
GND
X
G1
G2
CB
RB DB V
EE155/255 Lecture 3 - Power Devices
Dead Time
EE155/255 Lecture 3 - Power Devices
Too Little Dead Time (11.6kW loss)
1.6µs 1.7µs 1.8µs 1.9µs 2.0µs 2.1µs 2.2µs 2.3µs 2.4µs 2.5µs 2.6µs 2.7µs 2.8µs 2.9µs 3.0µs 3.1µs 3.2µs-5V
0V
5V
10V
15V
20V
25V
30V
35V
40V
45V
50V0V
2V
4V
6V
8V
10V
12V
14V
16V-3.0KA
-2.5KA
-2.0KA
-1.5KA
-1.0KA
-0.5KA
0.0KA
0.5KA
1.0KA
1.5KA
2.0KA
2.5KA
3.0KA-10KW
0KW
10KW
20KW
30KW
40KW
50KW
60KW
70KW
80KW
90KW
100KW
110KW
V(m1)
V(p1l) v(p1h)-v(m1) V(1:gl) V(1:gh)-v(m1)
Ix(1:h:1) Ix(1:l:3)
ix(1:h:1)*(v(d)-v(m1)) ix(1:l:1)*v(m1)
4mJ3.4mJ
2500A
3.4mJ3.7mJ
EE155/255 Lecture 3 - Power Devices
0.6 0.8 1 1.2 1.4 1.6 1.8v G
(V)
0
10
0.6 0.8 1 1.2 1.4 1.6 1.8
v X (V
)
0
20
40
0.6 0.8 1 1.2 1.4 1.6 1.8
i M1 (k
A)
0
1
2
3
t (µ s)0.6 0.8 1 1.2 1.4 1.6 1.8
P M1 (k
W)
0
50
100
0
5
10
15
0
5
10
15
The “Real” Gate Signal
EE155/255 Lecture 3 - Power Devices
Too Much Dead-Time (340W loss)(Still pretty good)
1.6µs 1.7µs 1.8µs 1.9µs 2.0µs 2.1µs 2.2µs 2.3µs 2.4µs 2.5µs 2.6µs 2.7µs 2.8µs 2.9µs 3.0µs 3.1µs 3.2µs-5V
0V
5V
10V
15V
20V
25V
30V
35V
40V
45V
50V-2V
0V
2V
4V
6V
8V
10V
12V
14V
16V-700A
-600A
-500A-400A
-300A
-200A
-100A
0A100A
200A
300A
400A
500A600A
700A
800A-4KW
0KW
4KW
8KW
12KW
16KW
20KW
24KW
28KW
32KW
36KW
40KW
V(m2)
V(p2l) V(p2h)-v(m2) V(2:gl) V(2:gh)-v(m2)
Ix(2:h:1) Ix(2:l:3)
ix(2:h:1)*(v(d)-v(m2)) ix(2:l:1)*v(m2)
700mV diode drop
740A
0.27mJ
EE155/255 Lecture 3 - Power Devices
Just Right (310W loss)
1.6µs 1.7µs 1.8µs 1.9µs 2.0µs 2.1µs 2.2µs 2.3µs 2.4µs 2.5µs 2.6µs 2.7µs 2.8µs 2.9µs 3.0µs 3.1µs 3.2µs-5V
0V
5V
10V
15V
20V
25V
30V
35V
40V
45V
50V-2V
0V
2V
4V
6V
8V
10V
12V
14V
16V-350A
-280A
-210A
-140A
-70A
0A
70A
140A
210A
280A
350A
420A-0.3KW
0.0KW
0.3KW
0.6KW
0.9KW
1.2KW
1.5KW
1.8KW
2.1KW
2.4KW
2.7KW
V(m4)
V(p4l) v(p4h)-v(m4) v(4:gh)-v(m4) V(4:gl)
Ix(4:h:1) Ix(4:l:3)
IX(4:l:1)*v(m4) ix(4:h:1)*(v(d)-v(m1))
0.19mJ3uJ
Conduction loss is I2R = 502 x 1m ~ 25W
Slower gate rise
Short duration diode drop
EE155/255 Lecture 3 - Power Devices
Too much dead time is better than too little
EE155/255 Lecture 3 - Power Devices
Snubbers
EE155/255 Lecture 3 - Power Devices
LD
G 50V
+-
40A
RS
CS
D
Cj
M
Dampen Ringing Nodes
LD and Cj resonate when M is on
Parallel RS dampens tank
Series CS limits dissipation
EE155/255 Lecture 3 - Power Devices
Inductance on Drain
8uJ turn-on
42uJ turn-off
EE155/255 Lecture 3 - Power Devices
With Snubber (1nF, 5W)
8uJ turn-on
2uJ in snubber
42uJ turn-off
EE155/255 Lecture 3 - Power Devices
LD
G 50V
+-
40A
RS
CS
D
Cj
M
Design Procedure
Pick RS ~ 1/wCj
Pick CS so t >= p/w
OrEs = CSV2/2
EE155/255 Lecture 3 - Power Devices
G 50V+-
40A
RS
CS
D
M
DS
Move Turn-Off Dissipation to Passive Device
CS slows rise time of drain
CSV2/2RS dissipated in RS when CS discharges
Rarely used today
Other forms slow fall time and rising/falling currentEE155/255 Lecture 3 - Power Devices
Lab Half-Bridge Module
EE155/255 Lecture 3 - Power Devices
The Half-Bridge Module
1
2
Hin
IRS21834
ComVss
LO
S
HO
COM
Out
VDVB
M1
M2
R14.7
R24.7
U1
����
VCC
3
DT
GND
4
Hin
����
V12
C14.7 F
2.2 F200V
D356V5W
D1
R3 1
C21 F
VBCSupply
VDCFilter
D215V
C3
7
6
5
13
12
11
EE155/255 Lecture 3 - Power Devices
Bootstrap Supply
EE155/255 Lecture 3 - Power Devices
Drain Voltage Filter
1
2
Hin
IRS21834
ComVss
LO
S
HO
COM
Out
VDVB
M1
M2
R14.7
R24.7
U1
����
VCC
3
DT
GND
4
Hin
����
V12
C14.7 F
2.2 F200V
D356V5W
D1
R3 1
C21 F
VBCSupply
VDCFilter
D215V
C3
7
6
5
13
12
11
EE155/255 Lecture 3 - Power Devices
Drain Voltage Filter300nH Input Inductance
EE155/255 Lecture 3 - Power Devices
SPICE
EE155/255 Lecture 3 - Power Devices
SPICE Example – A Voltage Divider
EE155/255 Lecture 3 - Power Devices
A Voltage Doubler* Simple voltage "doubler".include "gel.lib".param td=100n tr=100n tf=100n tw=2.5u tcy=5u ncy=2.param l1=22uH c1=10uF r1=10
* call half-bridge subcircuitxhb vd mid g g 0 v12 gel_hb
* circuitl1 vin mid {l1}c1 vd 0 {c1}r1 vd 0 {r1}
* suppliesv12 v12 0 12vin vin 0 24
* stimulusVG g 0 PULSE(0 5 {td} {tr} {tf} {tw} {tcy} {ncy})
.ic i(l1)=9.2
.ic v(vd)=42.8
.tran {ncy*tcy}
EE155/255 Lecture 3 - Power Devices
Turn-On Transient
EE155/255 Lecture 3 - Power Devices
Steady State
EE155/255 Lecture 3 - Power Devices
Close up of Drain Current
EE155/255 Lecture 3 - Power Devices
With PID Control
EE155/255 Lecture 3 - Power Devices
A Warning• SPICE (or any simulator) is a Verification tool, not a Design tool• Design your circuit first
– Use Excel, Matlab, a calculator etc… to calculate component values• Then simulate your circuit to check operation and fine-tune parameters• Don’t try to design your circuit using SPICE
• Simulation is not a substitute for thinking
EE155/255 Lecture 3 - Power Devices
Summary• Real switches have limitations
– Conduction losses (RON for FETs, VCE for IGBTs, Diode drop)– Switching losses (finite ton, toff, trr)
• With current source load, current ramps, then voltage falls • And voltage rises before current falls• May be dominated by reverse recovery time• Complicated by inductance
• Power MOSFETs– Switch quickly, have linear I-V, integral diode
• IGBTs– Diode-like I-V, slower switching
• Diodes– Have reverse recovery time
• Switches operate in pairs– For one-way converters, one switch may be a diode– Synchronous rectification – make both switches FETs to reduce loss– Need “dead time” to avoid “shoot through” current
• Gate-drive circuits control rise and fall times• Bootstrap supply needed for high-side driver• Snubbers dampen voltage and current transients• Use SPICE as a verification tool, not a design tool
No Date Topic HWout HWin Labout Labck Lab HW1 9/26/16Intro(basicconverters) 1 1 IntrotoST32F3 PeriodicSteadyState2 9/28/16EmbeddedProg/PowerElect.3 10/3/16PowerElectronics- 1(switches) 2 1 2 1 ACEnergyMeter PowerDevices4 10/5/16PowerElectronics- 2(circuits)5 10/10/16Photovoltaics 3 2 3 2 PVMPPT PVSPICE6 10/12/16FeedbackControl7 10/17/16ElectricMotors 4 3 4 3 MotorcontrolMatlab Feedback8 10/19/16IsolatedConverters9 10/24/16SolarDay 5/PP 4 5 4 Motorcontrol- Lab/ IsolatedConverters
10 10/26/16Magnetics11 10/31/16SoftSwitching 6 5/PP 6 5 PS MagneticsandInverters12 11/2/16ProjectDiscussions13 11/7/16Inverters,Grid,PF,andBatteries 6 P 6 Project14 11/9/16Thermal&EMI15 11/14/16QuizReview C116 11/16/16Grounding,andDebuggingQ 11/16/16Quiz- intheevening C2
11/21/16ThanksgivingBreak11/23/16ThanksgivingBreak
17 11/28/1618 11/30/16 C319 12/5/1620 12/7/16Wrapup
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