ee16.468/16.568lecture 7electro-optical integrated circuits principles of cdma

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EE16.468/16.568 Lecture 7 Electro-optical Integrated Circuits Principles of CDMA

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EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Principles of CDMA

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Optical CDMA advantages:

• Perform signal encoding/decoding in optical domain directly – potentially high speed (>100Gbit/s).

• Avoid electrical/optical and optical/electrical conversion bottleneck.

• Efficient bandwidth utilization.

• Data format and protocol transparent – simplified architecture and network maintenance.

• Simplified network architecture, less equipment inventory, flexible, scalable network.

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Fiber to the home (FTTH)

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Challenges:

• Accurate and tunable phase control

• All-optical switch and amplitude modulation

• Integrated circuits with these functionalities

Polymeric waveguide based photonic circuits:

• Large electro-optic (EO) and Thermo-Optic coefficients: - polymer TO ~ -1.4 x 10-4/°C; silica, T.O. ~ 1 x 10-5/°C - Polymer EO ~ 80pm/V, LiNbO3 ~ 33pm/V

• Low dielectric constant -- Potentially high–speed operation: - polymer: r ~ 2.3, Si: r ~ 10 - Capacitance ~ 5 times smaller than Si based circuits.

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

• Multifunction capability --- Photonic integrated circuits

Polymeric waveguide based photonic circuits:

• Flexible substrate, low cost and relative simple fabrications

4

1, 2, 3

filter

Electro-optic SSB modulator

AmplifierEO phase shifter

Si Electronics

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Fiber to the home (FTTH)

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Polymeric waveguide based OCDMA decoder

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Received signal SNR

• High bit error rate (BER) due to correction noise.• Need long sequence to reduce the correction error.

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Orthogonal Amplitude-phase Coding

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EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Optical CDMA Modulation

Channel 1

Channel 2

CDMA modulated signal

Channel 1

Channel 2

CDMA modulated signal

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Received signal

Time scale 25ps/100units

CDMA demodulated channel 1 signal CDMA demodulated channel 2 signal

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Polymer Waveguide optical Time Gate

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

100Gb/s Tranceivers

• High-speed (>40Gb/s) external modulators not available. • Extremely difficult to achieve CDR using high-bandwidth (>40GHz) electronic circuitry even with low k and scale VLSI technologies. • SNR degradation for ultra-high frequency circuitry.• Very expensive.

Difficulties of traditional transceivers

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

100Gb/s All-optical Transceiver Interface Module

1. Interface the relative slow electronics circuit.2. Perform pulse reshape and retiming without OE-EO

conversion.3. Future all-optical packet routing.

Why All-optical Module

Challenges:

1. 100GHz optical clock generation.2. Optical threshold gate.3. Re-shaping and re-timing.

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Architecture of 100Gb/s Transceiver Interface Module

• Precisely controlled time delays

• Photonics integrated circuit approach

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Architecture of 100Gb/s Transceiver Module

Pulse compressor:

0

0.005

0.01

0.015

0.02

0.025

0.03

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7Normalized input light intensity

Ref

ract

ive

inde

x ch

ange

Normal Kerr Effect

Dispersive Bragg gratingenhanced Kerr effect

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Kerr Nonlinearity in Semiconductors

Wcmn /103~ 2142

Kerr Nonlinearity:,2

2 InIKEn

in InP semiconductor

• Index change and tuning range:

• For high index contrast (3.5:1), 10mW laser power induces index changes of 0.03.

• Pulse compression ratio >10.

1295 1296 1297 1298 1299 1300 1301 1302 1303 1304 13050

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

wavelength nm

refle

ctio

n %

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Architecture of 100Gb/s Transceiver Module

DeMux:

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Architecture of 100Gb/s Transceiver Module

Re-timing and re-shaping:

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Other possible application – Optical Threshold Gates

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

Optical phase corruption

EE16.468/16.568 Lecture 7Electro-optical Integrated Circuits

2-D EO phase array