electrodynamic certificate t7
TRANSCRIPT
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BIJU PATNAIK UNIVERSITY OF TECHNOLOGY
ROURKELA
ORISSA
A Seminar Report on
NANO GENERATOR
Submitted by
TAPAS RANJAN PRADHAN
Regd. No.-0921294013
Under the Guidance of
Prof. D.K SAHOO
DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING
RAAJDHANI ENGINEERING COLLEGE
BHUBANESWAR-751017
ORISSA
2011
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BIJU PATNAIK UNIVERSITY OF TECHNOLOGY
ROURKELA
ORISSA
RAAJDHANI ENGINEERING COLLEGE
BHUBANESWAR-751017
ORISSA.
CERTIFICATECertified that the seminar report entitled Nano Generatoris a bonafied work carried out
by Tapas Ranjan Pradhan, Reg.No-0921294013,in partial fulfillment for the award ofBachelor
in Technology in Electrical & Electronics Engineering prescribed by Biju Patnaik
University of Technology, Rourkela during 2011-12. It is also certified that all the
corrections/suggestions indicated for the seminar have been incorporated in the report. This
seminar report has been approved as it satisfies the academic requirements in respect of the
Seminar prescribed for the 7th Semester ofBachelor in Technology.
Seminar Guide Seminar In-Charge H.O.D(Prof.D. K. Sahoo ) (Prof. J. R. Nayak) (Prof.D. K. Sahoo)
Head, Department of E.E.E Department of E.E.E . Head, Department of E.E.E
REC, Bhubaneswar. REC, Bhubaneswar. REC, Bhubaneswar.
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ACKNOWLEDGEMENT
The acts of few specific people are influence of many. Determination andinspiration in many minds are the reflection of these people.
I am greatly thankful to our respected and beloved Principal Prof(Dr.)
Bimal Sarangi and our Head of the Department Prof. D.K.Sahoo who are the
backbone for the success of this seminar.
My sincere thanks to the Seminar Guide Prof. D.K Sahoo for his
guidance and suggestions which helped in overcoming the hurdles in the
completion of this seminar report.
My sincere thanks to all the staff members of our department for their
immense support during the seminar work.
I also thank the non-teaching staff members of Electrical and
Electronics Engineering Department for their kind support and help in carrying out
the seminar work.
And last but not the least, I also thank my parents and friends for their
co-operation and encouragement in successfully completing the seminar work.
Signature of the student
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SYNOPSIS
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CONTENTS
1:Introduction 2:Geometrical Configuration
o 2.1: Vertical nanowire Integrated Nanogenerator(VING)
o 2.2: Lateral nanowire Integrated Nanogenerator(LING)
o 2.3: Nanocomposite Electrical Generators (NEG)o 2.4: Other type
3: Materials 4: Applications
o 4.1: Self-powered nano/micro deviceso 4.2: Smart Wearable Systemso 4.3: Transparent and Flexible Deviceso 4.4: Implantable Telemetric Energy Receiver
http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Implantable_Telemetric_Energy_Receiverhttp://en.wikipedia.org/wiki/Nanogenerator#Transparent_and_Flexible_Deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Smart_Wearable_Systemshttp://en.wikipedia.org/wiki/Nanogenerator#Self-powered_nano.2Fmicro_deviceshttp://en.wikipedia.org/wiki/Nanogenerator#Applicationshttp://en.wikipedia.org/wiki/Nanogenerator#Materialshttp://en.wikipedia.org/wiki/Nanogenerator#Other_typehttp://en.wikipedia.org/wiki/Nanogenerator#Nanocomposite_Electrical_Generators_.28NEG.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29http://en.wikipedia.org/wiki/Nanogenerator#Lateral_nanowire_Integrated_Nanogenerator_.28LING.29 -
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Introduction:-
Working principle of nanogenerator where an individual nanowire is
subjected to the force exerted perpendicular to the growing direction
of nanowire. (a) An AFT tip is swept through the tip of the nanowire.
Only negatively charged portion will allow the current to flow
through the interface. (b) The nanowire is integrated with the counter
electrode with AFT tip-like grating. As of (a), the electrons are
transported from the compressed portion of nanowire to the counter
electrode because of Schottky contact.
http://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_2.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.pnghttp://en.wikipedia.org/wiki/File:NG_Working_1.png -
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Working principle of nanogenerator where an individual nanowire issubjected to the force exerted parallel to the growing direction of
nanowire
The working principle of nanogenerator will be explained for 2different cases: the force exerted perpendicular and parallel to the axisof the nanowire.
The working principle for the first case is explained by a verticallygrownnanowiresubjected to the laterally moving tip. When a
piezoelectricstructure is subjected to the external force by the moving
tip, the deformation occurs throughout the structure. Thepiezoelectric
effectwill create theelectrical fieldinside thenanostructure; the
stretched part with the positive strain will exhibit the positive
electrical potential, whereas the compressed part with the negativestrain will show the negative electrical potential. This is due to the
relative displacement ofcationswith respect toanionsin its
crystalline structure. As a result, the tip of the nanowire will have an
electrical potential distribution on its surface, while the bottom of the
nanowire is neutralized since it is grounded. The maximum voltage
generated in the nanowire can be calculated by the following
equation[2]
:
, where 0is the permittivity in vacuum, is the dielectric constant,
e33, e15 and e31are the piezoelectric coefficients, is the Poisson ratio,
a is the radius of the nanowire, l is the length of the nanowire and max
is the maximum deflection of the nanowire's tip.
The electrical contact plays an important role to pump out charges inthe surface of the tip. Theschottky contactmust be formed between
the counter electrode and the tip of the nanowire since the ohmic
contact will neutralize the electrical field generated at the tip. In orderto form an effectiveschottky contact, theelectron affinity(Ea) must be
smaller than thework function() of the metal composing the counter
electrode. For the case ofZnOnanowirewith theelectron affinityof
4.5 eV,Pt(=6.1eV) is a suitable metal to construct theschottky
contact. By constructing theschottky contact, the electrons will pass
http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Pthttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Work_functionhttp://en.wikipedia.org/wiki/Electron_affinityhttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-1http://en.wikipedia.org/wiki/Anionshttp://en.wikipedia.org/wiki/Cationshttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Electrical_fieldhttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowire -
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to the counter electrode from the surface of the tip when the counter
electrode is in contact with the regions of the negative potential,
whereas no current will be generated when it is in contact with the
regions of the positive potential, in the case ofn-type semiconductive
nanostructure(p-type semiconductivestructure will exhibit thereversed phenomenon since the hole is mobile in this case). The
formation of theschottky contactalso contributes to the generation of
direct current output signal consequently.
For the second case, a model with a vertically grown nanowirestacked between theohmic contactat its bottom and theschottky
contactat its top is considered. When the force is applied toward the
tip of the nanowire, the uniaxial compressive is generated in the
nanowire. Due to thepiezoelectric effect, the tip of thenanowirewillhave a negativepiezoelectricpotential, increasing theFermi levelat
the tip. Since the electrons will then flow from the tip to the bottom
through the external circuit as a result, the positive electrical potential
will be generated at the tip. Theschottky contactwill barricade the
electrons being transported through the interface, therefore
maintaining the potential at the tip. As the force is removed, the
piezoelectric effectdiminishes, and the electrons will be flowing back
to the top in order to neutralize the positive potential at the tip. The
second case will generate alternating current output signal.
http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Fermi_levelhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectric_effecthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Ohmic_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/w/index.php?title=P-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1 -
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Geometrical Configuration:-
Depending on the configuration ofpiezoelectricnanostructure, the most
of the nanogenerator can be categorized into 3 types: VING, LING and
"NEG". Still, there is a configuration that do not fall into the
aforementioned categories, as stated in other type.
Vertical nanowire Integrated Nanogenerator (VING)
Schematic view of typical Vertical nanowire Integrated Nanogenerator,
(a) with full contact, and (b) with partial contact. Note that the grating
on the counter electrode is important in the latter case.
VING is a 3-dimensional configuration consisting of a stack of 3 layers
in general, which are the base electrode, the vertically grownpiezoelectricnanostructureand the counter electrode. Thepiezoelectric
nanostructureis usually grown from the base electrode by various
synthesizing techniques, which are then integrated with the counter
electrode in full or partial mechanical contact with its tip.
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/File:NG_VING.pnghttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectric -
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After Professor Zhong Lin Wang of the Georgia Institute of Technology
has introduced a basic configuration of VING in 2006 where he used a
tip of atomic force microscope (AFM) to induce the deformation of a
single verticalZnOnanowire, the first development of VING is followed
in 2007.[3]The first VING utilizes the counter electrode with theperiodic surface grating resembling the arrays of AFM tip as a moving
electrode. Since the counter electrode is not in full contact with the tips
of thepiezoelectricnanowire, its motion in-plane or out-of-plane
occurred by the external vibration induces the deformation of the
piezoelectricnanostructure, leading to the generation of the electrical
potential distribution inside each individualnanowire. It should be noted
that the counter electrode is coated with the metal forming theschottky
contactwith the tip of thenanowire, where only the compressed portionofpiezoelectricnanowirewould allow the accumulated electrons pass
through the barrier between its tip and the counter electrode, in case of
n-typenanowire. The switch-on andoff characteristic of this
configuration shows its capability of generating direct current generation
without any requirement for the externalrectifier.
In VING with partial contact, the geometry of the counter electrode
plays an important role. The flat counter electrode would not induce the
sufficient deformation of thepiezoelectricnanostructures, especiallywhen the counter electrode moves by in-plane mode. After the basic
geometry resembling the array ofAFMtips, a few other approaches
have been followed for facile development of the counter electrode.
Professor Zhong Lin Wangs group have generated counter electrode
composed of ZnO nanorods utilizing the similar technique used for
synthesizing ZnOnanowirearray. Professor Sang-Woo Kim's group of
Sungkyunkwan University(SKKU) and Dr. Jae-Young Choi's group of
Samsung Advanced Institute of Technology(SAIT) in South Koreaintroduced bowl-shaped transparent counter electrode by combining
anodized aluminumand theelectroplatingtechnology.[4]
They also have
developed the other type of the counter electrode by using networked
single-walled carbon-nanotube (SWNT) on the flexible substrate, which
is not only effective for energy conversion but also transparent.[5]
http://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/Nanogenerator#cite_note-4http://en.wikipedia.org/wiki/SWNThttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-3http://en.wikipedia.org/wiki/Electroplatinghttp://en.wikipedia.org/wiki/Anodized_aluminumhttp://en.wikipedia.org/wiki/Samsung_Advanced_Institute_of_Technologyhttp://en.wikipedia.org/wiki/Sungkyunkwan_Universityhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Atomic_force_microscopyhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Rectifierhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Schottky_contacthttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-2http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnO -
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The other type of VING has been also suggested. While it shares the
identical geometric configuration with the aforementioned, such a VING
has full mechanical contact between the tips of thenanowiresand the
counter electrode.[6]
This configuration is effective for application where
the force is exerted in the vertical direction (toward the c axis of thepiezoelectricnanowire), and it generates alternating current (AC) unlike
VINGs with partial contact.
Lateral nanowire Integrated Nanogenerator (LING)
Schematic view of typical Lateral nanowire Integrated Nanogenerator
LING is a 2-dimensional configuration consisting of three parts: the
base electrode, the laterally grownpiezoelectricnanostructureand the
metal electrode for schottky contact. In most of cases, the thickness of
the substrate film is much thicker than the diameter of thepiezoelectric
nanostructure, so the individualnanostructureis subjected to the pure
tensile strain.
LING is an expansion of single wire generator (SWG), where a laterally
alignednanowireis integrated on the flexible substrate. SWG is rather a
scientific configuration used for verifying the capability of electrical
energy generation of apiezoelectricmaterial and is widely adopted in
the early stage of the development.
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As of VINGs with full mechanical contact, LING generates AC
electrical signal. The output voltage can be amplified by constructing an
array of LING connected in series on the single substrate, leading the
constructive addition of the output voltage. Such a configuration may
lead to the practical application of LING for scavenging large-scalepower, for example, wind or ocean waves.
Nanocomposite Electrical Generators (NEG)
Schematic view of typical Nanocomposite Electrical Generator
"NEG" is a 3-dimensional configuration consisting three main parts: the
metal plate electrodes, the vertically grownpiezoelectricnanostructure
and the polymer matrix which fills in between in thepiezoelectric
nanostructure.
NEG was introduced by Momeni et al.[7]
It was shown that NEG has a
higher efficiency compared to original nanogenerator configuration
which a ZnO nanowire will be bended by an AFM tip. It is also shown
that it provides an energy source with higher sustainability.
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Other type
The fabric-like geometrical configuration has been suggested by
Professor Zhong Lin Wang in 2008. Thepiezoelectricnanowireis
grown vertically on the two microfibers in its radial direction, and theyare twined to form a nanogenerator.
[8]One of the microfibers is coated
with the metal to form a schottky contact, serving as the counter
electrode of VINGs. As the movable microfiber is stretched, the
deformation of thenanostructureoccurs on the stationary microfiber,
resulting in the voltage generation. Its working principle is identical to
VINGs with partial mechanical contact, thus generating DC electrical
signal.
http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-7http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectric -
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Materials:-
Among variouspiezoelectricmaterials studied for the nanogenerator,
many of the researches have been focused on the materials withwurtzite
structuresuch asZnO,CdS[9]andGaN.[10]The greatest advantage of
theses material arises from the facile and cost-effective fabrication
technique,hydrothermal synthesis. Since thehydrothermal synthesiscan
be conducted in a low temperature environment under 100C in addition
to vertical and crystalline growth , these materials can be integrated in
various substrates with reduced concern for its physical characteristics
such as a melting temperature.
Endeavors for enhancing thepiezoelectricityof the individualnanowirealso led to the development of otherpiezoelectricmaterials based on
Wurtzite structure. Professor Zhong Lin Wang of Georgia Institute of
Technology introduced p-type ZnOnanowire.[11]
Unlike then-type
semiconductivenanostructure, the mobile particle in p-type is a hole,
thus the schottky behavior is reversed from that of n-type case; the
electrical signal is generated from the portion of thenanostructurewhere
the holes are accumulated. It is experimentally proved that p-type ZnO
nanowirecan generate the output signal near 10 times that of n-type
ZnOnanowire.
From the idea that the material withperovskite structureis known to
have more effectivepiezoelectriccharacteristic compared to that with
wurtzite structure,Barium titanate(BaTiO3)nanowirehas been also
studied by Professor Min-Feng Yu ofUniversity of Illinois at Urbana
Champaign.[12]
The output signal is found to be more than 16 time that
from a similarZnOnanowire.
Professor Liwei Lin ofUniversity of California at Berkeleyhas
suggested thatPVDFcan be also applied to form a nanogenerator.[13]
Being a polymer, PVDF utilizes a near-field electrospinning for its
fabrication, which is rather a different technique compared to other
materials. The nanofiber can be directly written on the substrate
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miconductive&action=edit&redlink=1http://en.wikipedia.org/w/index.php?title=N-type_semiconductive&action=edit&redlink=1http://en.wikipedia.org/wiki/Nanogenerator#cite_note-10http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Piezoelectricityhttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Hydrothermal_synthesishttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-9http://en.wikipedia.org/wiki/GaNhttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/CdShttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Wurtzite_structurehttp://en.wikipedia.org/wiki/Piezoelectric 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controlling the process, and this technique is expected to be applied for
forming self-powered textile based onnanofiber.
Comparison of the reported materials by 2010 is given in the following
table.
Material Type GeometryOutput
voltage
Output
powerSynthesis
Researched
at
ZnO(n-
type)Wurtzite
D: ~100 nm,
L:
200~500 nm
VP=~9 mV @
R=500M
~0.5 pW
per cycle
(estimated)
CVD,
hydrothermal
process
Georgia
Tech.
ZnO(p-type)
Wurtzite D: ~50 nm,L: ~600 nm
VP=50~90 mV@ R=500M
5~16.2 pW
per cycle
(calculated)
CVD GeorgiaTech.
ZnO-ZnSWurtzite
(Heterostructure)Not stated
VP=~6 mV @
R=500M
~0.1 pW
per cycle
(calculated)
Thermal
evaporation
and etching
Georgia
Tech.
GaN Wurtzite
D:
25~70 nm,
L: 10~20 m
Vavg=~20
mV,Vmax=~0.35
V@ R=500M
~0.8 pW
per cycle
(average,calculated)
CVDGeorgia
Tech.
CdS WurtziteD: ~100 nm,
L: 1 mVP=~3 mV Not stated
PVD,
Hydrothermal
Process
Georgia
Tech.
BaTiO3 PervoskiteD: ~280 nm,
L: ~15 m
VP=~25 mV @
R=100M
~0.3 aJ per
cycle
(stated)
High
temperature
chemical
reaction
UIUC
PVDF Polymer
D: 0.5~6.5
m, L:
0.1~0.6 mm
VP=5~30 mV
2.5 pW~90
pW per
cycle
(calculated)
Electro
spinningUC Berkely
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Applications:-
Nanogenerator is expected to be applied for various applications where
the periodic kinetic energy exists, such as wind and ocean waves in a
large scale to the muscle movement by the beat of a heart or inhalation
of lung in a small scale. The further feasible applications are as follows.
Self-powered nano/micro devices
One of the feasible applications of nanogenerator is an independent or a
supplementary energy source to nano/micro devices consuming
relatively low amount of energy in a condition where the kinetic energy
is supplied continuously. One of example has been introduced byProfessor Zhong Lin Wangs group in 2010 by the self-powered pH or
UV sensor integrated VING with an output voltage of 20~40 mV onto
the sensor.
Still, the converted electrical energy is relatively small for operating
nano/micro devices; therefore the range of its application is still bounded
as a supplementary energy source to the battery. The breakthrough is
being sought by combining the nanogenerator with the other types of
energy harvesting devices, such assolar cellor biochemical energyharvester.
[14][15]This approach is expected to contribute to the
development of the energy source suitable for the application where the
independent operation is crucial, such asSmartdust.
Smart Wearable Systems
The outfit integrated or made of the textiles with thepiezoelectricfiber
is one of the feasible applications of the nanogenerator. The kineticenergy from the human body is converted to the electrical energy
through thepiezoelectricfibers, and it can be possibly applied to supply
the portable electronic devices such as health-monitoring system
attached with theSmart Wearable Systems. The nanogenerator such as
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VING can be also easily integrated in the shoe employing the walking
motion of human body.
Another similar application is a power-generating artificial skin.
Professor Zhong Lin Wangs group has shown the possibility bygenerating AC voltage of up to 100 mV from the flexible SWG attached
to the running hamster.[16]
Transparent and Flexible Devices
Some of thepiezoelectricnanostructurecan be formed in various kinds
of substrates, such as flexible and transparent organic substrate. The
research groups in SKKU (Professor Sang-Woo Kims group) and SAIT
(Dr. Jae-Young Chois group) have developed the transparent andflexible nanogenerator which can be possibly used for self-powered
tactile sensor and anticipated that the development may be extended to
the energy-efficient touch screen devices. Their research focus is being
extended to enhance the transparency of the device and the cost-
effectiveness by substituting Indium-Tin-Oxide (ITO) electrode with a
graphenelayer.[17]
Implantable Telemetric Energy Receiver
The nanogenerator based on ZnOnanowirecan be applied for
implantable devices sinceZnOnot only is bio-compatible but also can
be synthesized upon the organic substrate, rendering the nanogenerator
bio-compatible in overall. The implantable device integrated with the
nanogenerator can be operated by receiving the external ultrasonic
vibration outside the human body, which is converted to the electrical
energy by thepiezoelectricnanostructure.
http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Nanogenerator#cite_note-15http://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/ZnOhttp://en.wikipedia.org/wiki/Nanowirehttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-16http://en.wikipedia.org/wiki/Graphenehttp://en.wikipedia.org/wiki/ITOhttp://en.wikipedia.org/wiki/Nanostructurehttp://en.wikipedia.org/wiki/Piezoelectrichttp://en.wikipedia.org/wiki/Nanogenerator#cite_note-15