electron and phononin carbon nanostructures: a … · electron and phononin carbon nanostructures:...
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Electron and phonon in carbon nanostructures: a local study with scanning
tunneling spectroscopy
Lucia Vitali
Max-Planck Institut für Festkörperforschung, Stuttgart,Germany
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Spectroscopy on atomic scaleInelastic electron
tunneling spectroscopy:
Point contact spectroscopy:
Scanning Tunneling Spectroscopy:
Co and H-Co on Cu(111) TbPc2 on Cu(111)
Self-assembling, lithography, transport, …
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Carbon allotropes
diamond (3D) planar graphite C60 (0D)1985
single-walled carbon nanotube (1D)1991
Graphene2004
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Graphene 2D conductor, linear electron band, electron velocity independent on energy, high carrier
mobility, QHE at RT, gas sensor, …,
Metallic, superconducting, isolating transition (doping level), Endohedral fullerenes (Metal
or N): Magnetism and superconductivity
Electronic, mechanical and electrical new properties: Quasi 1D (model system for
physicists!) , metallic or semiconductor, supports large current flux, high carrier mobility, electron
field emitters, CNT-FET, Single electron transistors
high young modulus, high tensile strength, gas sensors, gas storage, …,
Fullerenes
CNT
Novel fascinations on Carbon
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Semiconducting SWCNTs as components of FETs
* S.J. Wind, J. Appenzeller, R. Martel, V. Derycke & Ph. Avouris; Appl. Phys. Lett. 80 (2002), 3817.
donor-acceptor hybrids: natural photosynthesis
NT-based Ultra-capacitors
Z. Chen et al., Science 5768, 1735 (2006)
Integrated Logic Circuit Assembledon a Single Carbon Nanotube
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Scanning Tunneling Microscopy & Spectroscopy
dI/dV~ρel
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6K-STM
Preparation chamber
LHe-Cryostat
STM
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Ch
T
(n,n)
(n,0)
a1a2
roll-up vector:
Ch = na1 + ma2 ≡ (n,m)
metallic if (n-m) = 3q
semiconducting if (n-m) ≠ 3q
q:integer
chiral (n,m)
zigzag (n,0)
armchair (n,n)
Structure of single-wall carbon nanotubes (SWCNTs)
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-Impurity atom
-Strain, different bond strength
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Spatial resolution
A.M.Rao et al. Science 275.187.1997
Raman Spectroscopy
A.Mews et al. Adv.Mat.12.1210.2000
Confocal Raman Spectroscopy
A.Hartschuh et al. PRL.90.095503.2003
Near-Field Raman Spectroscopy
0.14µm
1
10
100
1000
Nea
r F
ield
Ram
an S
pect
rosc
opy
Con
foca
l Ram
an S
pect
rosc
opy
Ram
an S
pect
rosc
opy
nm
10Å
10Å
1
10
100
1000
Inel
asti
c E
lect
ron
Tun
nelin
g Sp
ectr
osco
py
Nea
r F
ield
Ram
an S
pect
rosc
opy
Con
foca
l Ram
an S
pect
rosc
opy
Ram
an S
pect
rosc
opy
nm
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Spectroscopy technique: Localprobe of lattice dynamics (vDOS)
Inelastic Electron Tunneling Spectroscopy
- Carbon nanotubes (SWCNT)
- Graphite (HOPG)
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Electron Tunneling Spectroscopy
dI/dV~ρel+ρin
Elastic tunneling Inelastic tunneling
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SWCNT on Au/mica
+ =
Acknowledgment:* M.Knez , Y.W.Fan for the sample preparation
Recipe:Disperse SWCNT in Dichlorethane, Sonicate and centrifuge.Deposit the solution on Au substrates
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10Å
....to tube diameter ?
From STM images....
X
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Metallic tube∆E=6γ0aC-C/d∆E~1.38V
Diameter ~15.4Å
(14,8) tube
Determination of (n,m)
-0.9 -0.6 -0.3 0.0 0.3 0.6 0.9 1.20
1
2
3
4
5
6
7
0.8V
-0.58V
dI/d
V[n
A/V
]V
Φ=10°Chirality Θ=20°
(n,0)
(9,0) tube - metallic
-1,0 -0,5 0,0 0,5 1,00,0
0,2
0,4
den
sit
y o
f sta
tes [
arb
.un
its]
energy / γ0
-3
-2
-1
0
1
2
3
π/sqr(3)a0
E(
k x )
/ γ
0
kx
E1-1´
-0,8 -0,4 0,0 0,4 0,80,0
0,2
0,4
den
sit
y o
f sta
tes [
arb
.un
its]
energy / γ0
-3
-2
-1
0
1
2
3
0 π/sqr(3)a
E(
kx )
/ γ 0
kx
(10,0) tube - semiconducting
Egap
Energy separation between the first vHs singulatities:
∆E=2γ0aC-C/d semiconducting∆E=6γ0aC-C/d metallic
γ0= 2.5 eV tight-binding overlap energyaC-C=1.42Å lattice constant
10Å
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ωRBM=C/d
d
ω
Dependence of the radial breathingmode on the SWCNT diameter
0 10 20 30 40 50
d2 I/dV
2
mV
T = 6K
dt = 21.45Å
dt = 16.47Å
dt = 19.32Å
dt = 18Å
dt = 19.78Å
dt = 9.02Å
dt = 12.26Å
dt = 10.51Å
dt = 21.5Å C=262meV*ÅC~270-290meV*Å D.Sanchez-Portal et al PRB.59.12678.1999J.Kurti et al. PRB.58.R8869.1998
0.04 0.06 0.08 0.10 0.12
12
16
20
24
28
32
(9,4)
(17,14)
(22,9) (17,6)
(14,4)
(9,7)
RB
M (m
eV)
1/diameter (Å-1)
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Local properties:
Intramolecular-junctionTube cap
20Å
Ph.Lambin, V.Meunier, Appl.Phys.A 68.263.(1999)
10Å
Tube crossings
50Å
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(16,4) (19,4)
Å
High
Low
Local probe: Intra-molecular junction or 5/7 pairs
Phon
onen
ergy
(mV)
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(16,4) (19,4)
Å
Local probe: Intra-molecular junction or 5/7 pairs
High
Low
Phon
onen
ergy
(mV
)
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Local probe: Nanotube capping
„Neck“
Cap
Intermolecular-junction
10Å
(17,14) (9,7)
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-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8
RS
dI/d
V
V
Electronic structure
(9,7)
(17,14)
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Å
Nanotube capping: d2I/dV2
meV
RBM
PRL.93.136103.2004
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Theory for RBM(powered by C.S.Jayanthi et al)
(5,5)+C60
-finite length: A tube can sustain an RBM only if its length exceeds 3.5nm.
-capped region: Transforms from radial to tangential character inside the tube
PRL.93.136103.2004
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Crossed Nanotube Junctionpressure induced local metallization
Phys. Rev. Lett. 96, 086804 (2006)
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If a (9,2) tube crosses a bundle...
1. DOS
bI II III
Å
eV
A
I II III
PRL 96, 086804 (2006)
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1.1 DOS: Local pressure-induced metallization
d(9,2)=8.2Åbundle~15Å
=Tube compressed of ~35%
at the crossing junction
Pressure at crossing junction=15GPa(Assuming Bulk modulus=35GPa)
c
I II III
b
I II III
0 50 100 150
10
8
12
Å
Å
Å
eV
I II III
a
dI/d
V
PRL 96, 086804 (2006)
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1.2 DOS: Image-charges
Å
eV
A
I II III
Contact potential ∆=∆holes-∆image
∆V=∆Q/CTS
∆V=60meVCTS~0.1aF
∆Q= additional 0.025hole/nm(= ~25% total charge transferred )
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Å
meV
I II III
c
b
Å
meV
I II III a dI/d
V2
2d
I/d
V2
2
I II III
2. Vibrational density of states
G-band
RB-mode
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HOPG
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IETS of HOPG
Phonons+
Plasmon
The total density of phonons can be detected with STM-IETS
DFT powered
byL.Wirtz, A.Rubio
Experiment
PRB 69, R121414, (2004)
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-Enhancement of the phonon modes at K
Phonon assisted tunneling processElectron transmission probability
Κ// Γ M K
Tran
smis
sion
pro
babi
lity
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Take home message
- Inelastic Tunneling Spectroscopy as probe of lattice dynamics (vDOS)1. HOPG (phonon assisted tunneling process)2. SWCNT: RBM + G band
- Map of the vibration frequencies along the tube1. vibrational modes vs. tube structural changes
(i.e. 5/7 pairs or tube deformations)2. charge transfer
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You for your attention!
Acknowledgments
M.Burghard, M.A.Schneider, K.Kern, C.Riedl, U.Starke
@MPI-Stuttgart & Uni Erlangen
L.Wirtz, A.Rubio, @San Sebastian & Institute for
Microelectronics and Nanotechnology,Villeneuve d'Ascq
Lei, Liu, C.S.Jayanthi, S.Y.Wu@University of Louisville
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