electronic properties of iia hpht diamond samples … · ndt2 ndt6 ge current [a] applied bias [v]...
TRANSCRIPT
![Page 1: ELECTRONIC PROPERTIES OF IIA HPHT DIAMOND SAMPLES … · NDT2 NDT6 ge current [A] applied bias [V] | 11 CHARGE COLLECTION PROPERTIES 5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016](https://reader034.vdocument.in/reader034/viewer/2022042713/5fafe966abeb66543a307581/html5/thumbnails/1.jpg)
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
ELECTRONIC PROPERTIES OF IIA HPHT DIAMOND SAMPLES FROM NEW DIAMOND TECHNOLOGY
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| 25th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
WHY TO BOTHER WITH HPHT DIAMONDS
? What about electronic quality ?
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| 35th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
OUTLINE
1. NDT, Samples and Structural Quality
2. Current-Voltage Characteristics
3. Charge Collection Characteristics
4. TCT Characteristics
5. Summary
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HPHT DIAMONDS AND NDT
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
Multiseeds growth15m
m
25mm
Diamond cube 4x4 mm current 200 in three years 750
Diamond cube 7x7 mm current 15 in three years 60
Diamond cube 10x10 mm current 9 in three years 25
growth rate
HPHT
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HPHT DIAMONDS AND NDT
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
http://ndtcompany.com/
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HPHT DIAMONDS AND NDT
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
http://ndtcompany.com/
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SAMPLES AND STRUCTURAL QUALITY
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
Six HPHT diamond plates (NDT1-NDT6)
- sizes: 4 x 4 mm and ~100 µm thickness
- sizes: 4.5 x 4.5 mm and ~100 µm thickness
- from six different production runs
- <100>, monosectoral, Iia high purity
Standard procedure (used for e6 CVD) of samples metallization:
cleaning in hot acid solution H2SO4+KNO3 (boiling); DI water; IPA; drying
Al contacts by PVD sputtering power 200W, bias 1000V, Argon 10-3 mbar
with shadow masks, parallel plates
only two (NDT2 and NDT6) samples give promising results
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SAMPLES AND STRUCTURAL QUALITY- BIREFRINGENCE
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
NDT Iia HPHT E6 CVD (recently processed)
no birefringence contrast
for all six samples
strong to moderate
biref. contrast
Crossed-polarizers imaging before metallization
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CURRENT VOLTAGE CHARACTERISTICS
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
some general observations IIa HPHT for I-V @ RT (more than six samples):
- majority of the samples are not resistive, high leakage current (µA) at low bias (0.1V/µm)
- some samples are highly resistive but gives no sign of charge transport
- some samples ‘leak’, but give moderate to high quality charge transport properties
- one sample gives high resistivity and very good charge transport properties
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CURRENT VOLTAGE CHARACTERISTICS
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
-600 -500 -400 -300 -200 -100 0 100 2001f
100f
10p
1n
100n
10µ
1m
-6 -5 -4 -3 -2 -1 0 1 2
applied electric field [V/m]
NDT2
NDT6
lea
ka
ge
cu
rre
nt
[A]
applied bias [V]
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CHARGE COLLECTION PROPERTIES
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
- 5.5 MeV α-particles (Am-241 source, 4kBq)
- collimated elctrodes
- measurements in primary vacuum, dark
- majority of e or h drift (polarity of HV)
- coolFET A250 amptek preamp. (2.5 ns rise)
- 3 µs shaping time
- pocket MCA or DSO as DAQ
Set-up:Measurement conditions:
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CHARGE COLLECTION PROPERTIES - NDT2
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
0 200 400 600 8000
10
20
30
40
50
60
70
80
90
100
110
120
10V (0.1V/m)
20V (0.2V/m)
30V (0.3V/m)
40V (0.4V/m)
counts
ADC channel [au]
0 200 400 600 8000
1
2
3
4
5
6
7
8
9
10
10V
20V
30V
40V
50V
counts
ADC channel au
electrons driftholes drift
5.5 α-particles spectra vs. detector bias
-1,2 -0,8 -0,4 0,0 0,4 0,8 1,2
-100
-80
-60
-40
-20
0
20
40
60
80
100
CC
E %
Applied electric field [V/m]
holes drift
electrons drift
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CHARGE COLLECTION PROPERTIES - NDT2
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
950000 960000 970000 980000 990000 1000000
0
1
2
3
4
5
6
7
8
sig
na
l am
plit
ude [V
]
event number
997000 998000 999000 10000000
1
2
3
4
5
6
7
sig
na
l am
plit
ude [V
]event number
long term stability under 5.5 α-particles irradiation
weak polarization strong polarization
electrons driftholes drift
time
time
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CHARGE COLLECTION PROPERTIES - NDT6
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
0 200 400 600 8000
10
20
30
40
50
60
70
80
90
100
10V (0.1 V/m)
20V
30V
50V
80V (0.8 V/m)
counts
ADC channel [au]
0 200 400 600 8000
5
10
15
20
25
30
35
50 V (0.5 V/m)
80 V
120 V (1.2 V/m)
co
un
ts
ADC channel [au]
5.5 α-particles spectra vs. detector bias
holes drift electrons drift
-1,2 -0,8 -0,4 0,0 0,4 0,8 1,2
-100
-80
-60
-40
-20
0
20
40
60
80
100
NDT2
NDT6
CC
E %
Applied electric field [V/m]
holes drift
electrons drift
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CHARGE COLLECTION PROPERTIES - NDT6
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
990000 995000 10000000
1
2
3
4
5
6
7
sig
na
l a
mp
litu
de
[V
]
event number
960000 980000 10000000
1
2
3
4
5
6
7
sig
na
l am
plit
ude [V
]event number
holes drift electrons drift
stable - no polarization strong polarization
long term stability under 5.5 α-particles irradiation
time time
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CHARGE COLLECTION PROPERTIES – BEST OF NDT2 NDT6
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
0 200 400 600 8000
20
40
60
80
100
holes @ 0.8 V/m
electrons @ 1.2 V/m
co
un
ts
ADC channel [au]
0 200 400 600 8000
20
40
60
80
100
120 holes @ 0.4 V/m
electrons @ 0.5 V/m
coun
ts
ADC channel [au]
600 620 640 660 680 7000
20
40
60
80
100
counts
ADC channel [au]
EFWHM
=0.9%
NDT2NDT6
NDT6
spectroscopic grade
(holes drift)
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CHARGE COLLECTION PROPERTIES
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
-200 0 200 400 600 800
0,00
0,02
0,04
0,06
0,08
0,10
0,12
NDT3-holes
NDT6-holes
e6 EG scCVD
NDT6-electrons
sig
na
l a
mp
litu
de
[V
]
time [ns]
CoolFET A250 Amptek preamp
deep trapping for electrons polarization
shallow trapping for holes all de-trapped within 3 µs @ RT (~0.3 eV)
de-trapping probability @ RT
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TCT
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
- 5.5 MeV α-particles (Am-241 source, 4kBq)
- collimated elctrodes
- measurements in primary vacuum
- majority of e or h (polarity of HV)
- CVIDEC C2 fast amplifier
- DSO as DAQ
Set-up:Measurements conditions:
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TCT – NDT6
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
-1 0 1 2 3 4 5 6-0,6
-0,5
-0,4
-0,3
-0,2
-0,1
0,0
0,1
electrons
sig
na
l a
mp
litu
de
[V
]
time [s]
20V
150V
- fast rise and decay times – nice time detector
- no flat top, high amplitude (built-in field)
- drift velocity seems faster than CVD
(but thin sample, internal field need tct on thicker
samples)
- no de-trapping visible
-1 0 1 2 3 4 5 6-0,6
-0,5
-0,4
-0,3
-0,2
-0,1
0,0
0,1
150V
sig
na
l a
mp
litu
de
[V
]
time [ns]
holes
10V
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TCT – NDT6
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
-2 0 2 4 6 8 10-0,6
-0,5
-0,4
-0,3
-0,2
-0,1
0,0
0,1
holes
electrons
sig
na
l a
mp
litu
de
[V
]
time [ns]
0 2 4 6 8 10
-0,5
-0,4
-0,3
-0,2
-0,1
0,0
NDT6 (97 m) electrons
NDT6 (97 m) holes
e6CVD (500 m) electrons
sig
na
l am
plit
ude [V
]
time [ns]
-2 0 2 4 6 8 10-0,6
-0,5
-0,4
-0,3
-0,2
-0,1
0,0
0,1
holes
electrons
sig
na
l a
mp
litu
de
[V
]
time [ns]
150 V
20 V 80 V
-2 0 2 4 6 8 10
-5
-4
-3
-2
-1
0
e6 CVD 500m
holes NDT6
electrons NDT6
inte
gra
ted T
CT
[au]
time [ns]
puzzling: no de-trapping visible
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SUMMARY
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
(Very) Preliminary characteristics of Iia HPHT samples from NDT were performed:
I-V: majority of the samples are conductive (impossible to apply bias)
- some of them have acceptable level of leakage current
- rarely samples are highly resistive
CCE: - for holes drift reaches 100%; for electrons drift reaches 80%
- stable operation for holes drift, with spectroscopic quality
deep trapping for electrons leads to polarization, shallow trapping for holes
all charge released @ RT within shaping time used (3micros)
TCT: - fast signals including rise and decay time (no slow component)
- holes faster than electrons, drift velocity seems higher than CVD
Only two samples out of six give promising results
In current state NDT samples can be used for some detector applications
(if same or better quality than NDT6): eg. traversing particles, time measurements,
tagging, spectroscopy with majority of holes drift
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Thank you very much for your kind attention !
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Commissariat à l’énergie atomique et aux énergies alternatives
Institut List | CEA SACLAY NANO-INNOV | BAT. 861 – PC142
91191 Gif-sur-Yvette Cedex - FRANCE
www-list.cea.fr
Établissement public à caractère industriel et commercial | RCS Paris B 775 685 019
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SAMPLES AND STRUCTURAL QUALITY
5th ADAMAS Workshop, Darmstadt, Germany 15-16/12/2016 | Pomorski Michal
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| 25AMDE 2016 Conference, Gunma University, Japan 09/12/2016 | Pomorski Michal
BNCD SEE MEMBRANES
100 nm
Silicon nitride
windows
nanoseeding
BNCD coated
silicon nitride windows
CVD grwoth
- seeding with diamond
nanoparticles 5-20nm
in PDDAC
- MVCVD diamond growth (H2/CH4)
- temperature ~ 500-800 C
- boron doping (TMP)
up to metallic conductivity
- few hours processing
- commercial product
- 150 nm thick membrane
- not expensive
NEA
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| 26AMDE 2016 Conference, Gunma University, Japan 09/12/2016 | Pomorski Michal
ACTIVE SCCVD DIAMOND MEMBRANE – 3 MEV PROTONS
diamond as a soild-state ionization chamber