electronics principles & applications fifth edition chapter 5 junction transistors ©1999...
TRANSCRIPT
![Page 1: Electronics Principles & Applications Fifth Edition Chapter 5 Junction Transistors ©1999 Glencoe/McGraw-Hill Charles A. Schuler](https://reader033.vdocument.in/reader033/viewer/2022061518/56649dff5503460f94ae74af/html5/thumbnails/1.jpg)
ElectronicsElectronics
Principles & ApplicationsPrinciples & ApplicationsFifth EditionFifth Edition
Chapter 5Junction Transistors
©1999 Glencoe/McGraw-Hill
Charles A. Schuler
![Page 2: Electronics Principles & Applications Fifth Edition Chapter 5 Junction Transistors ©1999 Glencoe/McGraw-Hill Charles A. Schuler](https://reader033.vdocument.in/reader033/viewer/2022061518/56649dff5503460f94ae74af/html5/thumbnails/2.jpg)
• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types
INTRODUCTION
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Amplifier Out
InGain =
In
Out
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N
P
N
NPN Transistor Structure
The collector is lightly doped. C
The base is thin and is lightly doped.
B
The emitter is heavily doped. E
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The C-B junction is reverse biased.
N
P
N
NPN Transistor Bias
C
B
E
No current flows.
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The B-E junction is forward biased.
N
P
N
NPN Transistor Bias
C
B
E
Current flows.
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When both junctionsare biased....
N
P
N
NPN Transistor Bias
C
B
E
Current flowseverywhere.
Most of the emitter carriersdiffuse through the thin base
region since they are attractedby the collector.
Note that IB is smallerthan IE or IC.
IC
IB
IE
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N
P
N C
B
E
Although IB is smallerit controls IE and IC.
IC
IB
IE
Note: when the switch opens, all
currents go to zero.
Gain is something smallcontrolling something large
(IB is small).
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Transistor structure and bias quiz
The heaviest doping is found in the___________ region. emitter
The thinnest of all three regions is calledthe ____________. base
The collector-base junction is ___________biased. reverse
The base-emitter junction is ____________biased. forward
The majority of the emitter carriers flow tothe ___________. collector
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N
P
C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
= IC
IB
The current gain frombase to collector
is called
99 mA
1 mA= 99
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N
P
C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
IE = IB + IC
99 mA= 1 mA +
= 100 mA
Kirchhoff’scurrent law:
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C
B
E
IC = 99 mA
IB = 1 mA
IE = 100 mA
In a PNP transistor,holes flow from
emitter to collector.
Notice the PNPbias voltages.
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Transistor currents quiz
is the ratio of collector current to ______current. base
The sum of the base and collector currentsis the __________ current. emitter
In NPN transistors, the flow from emitter tocollector is composed of _______. electrons
In PNP transistors, the flow from emitter tocollector is composed of _______. holes
Both NPN and PNP transistors show__________ gain. current
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Emitter
NPN schematic symbol
Base
Collector
Memory aid: NPNmeans Not Pointing iN.
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Collector
Base
Emitter
PNP schematic symbol
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IB
IC
VCE
B
C
E
This circuit is used tocollect IC versus
VCE data forseveral values of IB.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
When graphed, the data provide anNPN collector family of curves.
20 A
0 A
100 A
80 A
60 A
40 A
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
= IC
IB
= 15040 A
6 mA
100 A
14 mA= 140 This type of gain
is called dc or hFE.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
ac = Another type of gainis called ac or hfe.
IC
IB
= 12520 A
2.5 mA
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IBWith these values of IB:
The C-E model is a resistor.
C
E
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IB When IB >> 100 A
VCE 0
The model is a closed switch.
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0 2 4 6 8 10 12 14 16 18
2468
101214
VCE in Volts
IC in mA
20 A
0 A
100 A
80 A
60 A
40 A
IB When IB = 0
IC = 0
The model is an open switch.
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Transistor operating conditions quiz
When IB is large and VCE 0, the transistoracts as a ___________ switch. closed
When IB = 0 and IC = 0, the transistoracts as an ___________ switch. open
When IB > 0 and VCE > 0, the transistoracts as a ___________. resistor
Two current gain measures are dc and__________. ac
The symbol hfe is the same as _________.ac
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0
E-B junction is forward biased by the ohmmeter.
V
mA
NPN
E
BC
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0
The C-E resistance is very high.
V
mA
NPN
E
BC
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0
The meter reading is < 100 kdue to gain.
V
mA
NPN
E
BC
100 k
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Current OutCurrent In CurrentAmplifier
The BJT isa currentamplifier.
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Current OutVoltage In VoltageAmplifier
The JFET isa voltage
controlledamplifier.
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DrainSource
Drain
Source
Gate
Gate
Structure of anN-channel JFET
P-type substrate
P
N-channel
The channel has carriers so it conducts from source to drain.
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DrainSource
Drain
Source
Gate
Gate
P
N-channel
P-type substrate
A negative gate voltagecan push the carriers from
the channel and turn the JFET off.
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0VDS in Volts
ID in mA
-4 V
-5 V
0 V
-1 V
-2 V
-3 VVGS
N-channel JFET drain family of characteristic curves
This is known as a depletion-mode device.
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n
Source
Gate
Drain
VDD
p
n
It’s possible to make enhancementtype field effect transistors as well.
G
S
D
VGG
Gate bias enhances the channel and turns the device on.
Metaloxide
insulator
N-channelMOSFET
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0VDS in Volts
ID in mA
1 V
0 V
5 V
4 V
3 V
2 VVGS
Enhancement mode MOSFET drain family of characteristic curves
Drain
Source
Gate
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Base 2
Base 1
Emitter
The unijunction transistor fires when its emitter voltage reaches VP.
VP
Emitter current
Em
itte
r vo
ltag
e
Then, the emitter voltagedrops due to its negativeresistance characteristic.
The UJT is not useful as an amplifier.It is used in timing and control applications.
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Other transistor types quiz
BJTs are __________ -controlledamplifiers. current
FETs are __________ -controlledamplifiers. voltage
JFETs operate in the _________ mode.depletion
MOSFETs operate in the __________mode. enhancement
UJTs are not useful as __________.amplifiers
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REVIEW
• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types