eliminating organic contamination on oxidized si surfaces using atomic oxygen liz strein, david...
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![Page 1: Eliminating organic contamination on oxidized Si surfaces using atomic oxygen Liz Strein, David Allred, R. Steven Turley, and the EUV/thin films group](https://reader036.vdocument.in/reader036/viewer/2022062806/56649cae5503460f9497181d/html5/thumbnails/1.jpg)
Eliminating organic contamination on oxidized Si
surfaces using atomic oxygen Liz Strein, David Allred, R. Steven
Turley, and the EUV/thin films group
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Outline
• Motivation
• Techniques/Methods
• Results
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J. Tveekrem, “Contamination effects on EUV optics,” NASA Technical Report TP-1999-209264, 1999. Used with permission.
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0
0.2
0.4
0.6
0.8
1
0 5 10 15 20 25 30 35 40
0.1nm organic1nm organic
angle (from grazing)
0
0.2
0.4
0.6
0.8
1
0 5 10 15 20 25 30 35 40
0.1nm organic
angle (from grazing)
Calculated reflectance for 41.3nm (30 eV) light on silicon
SiO2
Si
organic
incident light reflected light
E. Gullikson, X-Ray Interactions with Matter, http://henke.lbl.gov/optical_constants Accessed 27 Feb 2008. (calculated with the bilayer program)
refle
cta
nce
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Instrumentation
X-ray Photoelectron Spectrometer (XPS)
Ellipsometer
Excimer UV lamp (cleans samples)
Evactron Plasma Cleaner(cleans XPS antechamber)
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Excimer Lamp
• Cleaning technique
• The excimer lamp creates ozone and oxygen radicals by exposing oxygen to 172nm photons.
•These products oxidize the adventitious carbon on the samples thus freeing the sample of its organic contamination
Adapted from http://ecl.web.psi.ch/NanoKat/Ni_Al2O3_ethanol_1.jpg
O
SiO2
organic
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Ellipsometry
• Looks at how polarized light changes when it reflects from a surface.
• Used to determine the relative change in thickness for the “apparent oxide” on a sample
Adapted from http://users.aber.ac.uk/tej/ellipso5.gif
SiO2
Si Substrate
organic“apparent oxide” layer
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X-ray Photoelectron Spectroscopy(XPS)
• Detects the speed of electrons ripped off from a sample’s surface by x rays.
• Used to determine the chemical composition of a sample.
http://www.almaden.ibm.com/st/scientific_services/materials_analysis/xps/XPS.gif
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Need for Evactron: Deposition rate on the samples exposed to the XPS antechamber
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Evactron C DeContaminator
• Plasma clean the XPS chamber
http://www.evactron.com/63193/image2.gif
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Before excimer lamp
After excimer lamp
Si 2p
Si 2p
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Correlation between characterization methods
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how the “apparent oxide” thickness decreases with exposure time
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Conclusions
• 5 min under lamp cleans off most of the last couple of angstroms of AC
• Correlation between characterization techniques (there are big problems when the characterization instruments change the nature of a sample)
• Cleanliness is important
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Acknowledgements
• Amy Grigg• Mike Keenlyside at Surface Physics• Resonance LTD for the excimer lamp• Gabe Morgan and Ron Vane for their loan of the
Evactron C De-Contamination System• Dr. Matt Linford• Lei Pei• The department of Physical and Mathematical
Sciences for funding
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1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
0 5 10 15 20
never exposed to chamberin chamber for < 1.5 min
appa
ren
t oxi
de t
hick
ness
(nm
)
days stored in air
Storage dataStorage time: 10 min to 19 days
Most samples began with an apparent oxide layer ≤ 1.83nm