engineering the fundamental properties of lightcolloq/talk17/presentation17.pdf · si inverted opal...
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![Page 1: Engineering the Fundamental Properties of Lightcolloq/Talk17/Presentation17.pdf · Si Inverted Opal A. Blanco et. al. Nature 405, 437 (2000) 3D Photonic Band Gap Materials](https://reader031.vdocument.in/reader031/viewer/2022011907/5f501717989c2769e76bd1f7/html5/thumbnails/1.jpg)
Photonic Band Gap Materials
Engineeringthe Fundamental
Properties ofLight
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PBG Materials: Engineering the Fundamental Properties of Light
Single mode air-waveguides, micro-cavities, bends etc.Diffractionless flow of light without “leaky” modesLight Localization based Integrated Optics in 3+1 Dimensions
Localization of Light:Reduction of Optical PathwaysTrapping of Light in Air2D PBG Hollow core photonic crystal fibers
Engineering the Laws of Refraction: Negative and Out-of-planeRefraction
Micro-fabrication of 3D PBG materials:
Direct laser writing, plasma tuning, and double inversion to Si
Engineering Diffraction:
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Si Inverted OpalSi Inverted OpalA. Blanco et. al.Nature 405, 437 (2000)
3D Photonic Band Gap Materials
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Near Near PhotonicPhotonic Band GapBand Gapρ(ω)ρ(ω) << << ρρ00(ω) (ω) )=ω)=ω22/(π/(π22cc33) free space) free space
S. John, Phys. Rev. S. John, Phys. Rev. LettLett. 53, 2169 (1984). 53, 2169 (1984)S. John, Phys. Rev. S. John, Phys. Rev. LettLett. 58, 2486 (1987) . 58, 2486 (1987) E. Yablonovitch, Phys. Rev. Lett. 2059 (1987)S.John, R.S.John, R.RangarajanRangarajan, Phys.Rev.B. , Phys.Rev.B. 3838, 10101 (1988), 10101 (1988)
Resonance Regime Generalized Localization
Criterion
Resonance Regime Resonance Regime Generalized Localization Generalized Localization
CriterionCriterion
( ) ( )2* phase space 4π× ≈( ) ( )2* phase space 4π× ≈
2not necessarily 4 kπ 2not necessarily 4 kπ
Modification of AvailableLight Paths due to Resonances
* 2Ioffe-Regel: 1πλ
≈* 2Ioffe-Regel: 1πλ
≈
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Localized State of Light in PBG
Electric and Magnetic Fields and Energy Density
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Refractive Optics near a Photonic Crystal Surface(i) Conservation of momentum parallel to interface(ii) Refracted ray is normal to iso-frequency surface
Engineered RefractionSuperprism, Negative Refraction
k-space picture for uniform dielectric
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Anomalous Refractive Optics at a Silicon Inverse Opal Surface
Iso-frequency surface curvature yieldsnegative refraction, out-of plane refractionmultiple refracted rays, etc… Azimuthal rotation defines
Cylindrical Surface thatintersects Iso-freq Surfaces
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Direct Laser Writing of Photonic Crystals
Two-Photon Absorption
M. Deubel, M. Wegener, A. Kaso, and S. JohnApplied Physics Letters 85 (11), 1895 (2004) Voxel lateral size as small as
120nm for 780 nm illumination
Slanted Pore (SP-2) Architecture
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Sub-Nanometer Scale Polishing of Photonic Crystal by Plasma Etching
Direct laser WrittenWoodpile
Low Plasma exposure time
High Plasma exposure time
Variables:Plasma flow rateExposure TimeTemperature
Polystyrene Opal with EngineeredSphere DiameterGradient nearSurface
G. von Freymann,T. Chan, S. John,V. Kitaev, G. Ozin,M. Deubel, andM. WegenerPhotonics andNanostructures 2No. 3, 191 (2004)
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Synthesis of Silicon PBG materials from Polymer Photoresistby Direct Laser Writing and Double Inversion
(i) Spin coat SU8(ii) Direct Laser Write
and Develop(iii) Room Temp CVD
of SiO2(iv) Remove excess SiO2
by RIE to expose SU8(v) Remove SU8 by oxygenplasma etch and combustion(vi) Disilane CVD(vii) Selective etch of SiO2
to yield silicon PBG
Toronto-Karlsruhe collaboration
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Air-Waveguide Omni-Reflector Cladding ?
No Disorder:Rapid leakageinto 3rd
dimensionAttenuation ~ 2dB /micron
Attempt to optimizeConfinementn1=3.5n2=1.56
F1,F2
F1
F2
Dielectric Wave-guide in 2D Photonic Crystal Membrane
Localization in-planeOnly
Disorder:25 nm diameterrandomness
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Optical Micro-Chip based on 2D-3D Hetero-structure Design
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0
0.1
0.2
0.3
0.4
0.5
Γ X M Γ Y MFr
eque
ncy
[c/a
]0
0.1
0.2
0.3
0.4
0.5
kx
ky
Γ
X
Y
M
3D PC bands
2D PC bands
xyz
Optical Micro-Chips based onDielectric 2D-3D PBG Heterostructures
Composite Band Structure for 2-D array of rods Sandwiched between 3-DInverse Square Spirals
A. Chutinan, S. John, O.ToaderPRL 90, 123901 (2003)
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0 0.1 0.2 0.3 0.4 0.50.32
0.34
0.36
0.38
0.4
0.42
0.44
Wave vector[2π/a]
a/λ
0 0.1 0.2 0.3 0.4 0.50.32
0.34
0.36
0.38
0.4
0.42
0.44
3D PC bands
3D PC bands
2D PC bands
0 0.1 0.2 0.3 0.4 0.50.32
0.34
0.36
0.38
0.4
0.42
0.44
Wave vector[2π/a]
a/λ
0 0.1 0.2 0.3 0.4 0.50.32
0.34
0.36
0.38
0.4
0.42
0.44
3D PC bands
3D PC bands
2D PC bands
Radius
[a]Thickness[a]
Bandwidth[nm]
Variation of Gap Modes with Thickness “t” of Micro-chip Layerand Radius “r” of Rods in 2D lattice
Direct Square Spiral 5: Single ModeAir-Waveguide Bandwidth at 1.5 microns
t=0.8ar=0.15a
t=0.3ar=0.15a
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0 0.1 0.2 0.3 0.4 0.50
50
100
150
Misalignment ∆[a]
Wav
egui
ding
Ban
dwid
th[n
m]
x-direction y-direction
0.34 0.35 0.360
0.2
0.4
0.6
0.8
1
a/λ
Tran
smis
sion
Effect of Disorder on Single-mode Air-waveguide Bandwidth (1.5 microns)
Single ModeWave-GuidingBandwidth vs.MisalignmentOf Upper 3DPBG CladdingLayer
(Bandstructure)
(FDTD)
At 1.5 microns<100 nm: very robust>200nm: multi-mode
Random rod diameter variationwith 20% FWHM fluctuation (48 nm)causes about 5% backscattering over50 unit cells along waveguide.
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3 + 1 Dimensional Integrated Optics
PBG Chip to Chip Interconnects Diffraction-lessLoss-less flowover 200 nmBandwidth
Hundreds of WDM channelsNo cross-talk
Minimal HeatDissipation
Blue boxes areregions wheredielectric isremoved to formvertical link
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Slanted Pore SP-2 PBG Material24% 3D PBG
Tetragonal unit cell (a,a,1.4a)Hole radius 0.345aMicro-chip layer t=0.6aSquare lattice of circular rodsof diameter 0.3a
180 nmSingle mode
Air-waveguidebandwidth
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0 0.1 0.2 0.3 0.4 0.0.3
0.35
0.4
a/λ
Wave vector[2 π/c]0 0.1 0.2 0.3 0.4 0.
0.3
0.35
0.4
3D PC bands
3D PC bands
Slanted Pore3D PBGCladding
High Bandwidth 3D micro-circuitry in SP2 PBG
Lattice matched planar micro-chip layers provide200 nm of single mode bandwidth
Vertical links act like Fabry-Perot resonators with high transmission bandwidth provided by couplers
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(0,0,0)
(a,a,c)
(0,0,0)
yx
z
(a,a,c)
0.335 0.34 0.345 0.35 0.3550
0.2
0.4
0.6
0.8
1transmission
reflection
Inte
nsity
in-plane 90o
U-turn 3.75c U-turn 7.75c
a/λ
Transmission Characteristics for 3D Circuit BendMultiple Fabry-Perot resonances with Q-factor reducedby Coupler (dielectric removed from green box)
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FDTD Simulation of Electric, MagneticAnd Poynting Vectors on 3D SP2 Chip
Diffractionless transmission of Light in Air-guideswith sharp3D bends
Bandwidth:200 nm on-chip
100 nm overlapbetween planarand vertical forchip-to-chipinterconnection
A. Chutinan and S. John to be published
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SUMMARYLocalization of Light in 3D PBG
Diffractionless Flow of Light and Integrated Optics in 3+1 D:3D air-waveguide circuit paths100-200 nm single mode bandwidth
Microfabrication:Direct Laser WritingPlasma TuningDouble inversion for Silicon
The Designer EM Vacuum:Frequency selective control of spontaneous emission