epc2045 100v gan-on-silicon transistor - system plus consulting; · 2017. 9. 27. · ©2017 by...
TRANSCRIPT
©2017 by System Plus Consulting | TI LMG3410 1
21 rue la Noue Bras de Fer44200 NANTES - FRANCE +33 2 40 18 09 16 [email protected] www.systemplus.fr
EPC2045100V 16A GaN TransistorPower Semiconductor report by Elena Barbarini September 2017 – version 1
©2017 by System Plus Consulting | TI LMG3410 2
SUMMARY
Overview / Introduction 3
o Executive Summary
o Reverse Costing Methodology
Company Profile 8
o EPC
o Products
Physical Analysis 14
o Synthesis of the Physical Analysis
o Package analysis
Package opening
Package Cross-Section
o FET Die
FET Die View & Dimensions
FET Die Process
FET Die Cross-Section
FET Die Process Characteristic
Transistor Manufacturing Process 46
o FET Die Front-End Process
o FET Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 55
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o FET die
FET Front-End Cost
FET Die Probe Test, Thinning & Dicing
FET Wafer Cost
FET Die Cost
o Complete device
Packaging Cost
Final Test Cost
Price Analysis 68
o Estimation of selling price
Comparison 71
o Comparison of Epitaxy in GaN
o Comparison of packaging of GaN transistors
o Comparison between 100V GaN on Si and Si MOSFET
Company services 76
©2017 by System Plus Consulting | TI LMG3410 3
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Executive Summary
System Plus Consulting unveils EPC2045 from EPC, the latest device driving 100V adapted for applications such as single stage 48 V, USB-C,LiDAR, point-of-load converters and load Open Rack server architectures.
With the new design of transistor and GaN epitaxy, the EPC2045 features a low voltage breakdown voltage of 100V for a current of 16A(25°C), and a very low RdsOn (7mOhm) respect to the previous generation.
Respect to their counterpart on Si, GaN process developments have significantly lower capacitance and this translates into lower gatedrive losses and lower device switching losses at higher frequencies for the same on-resistance and voltage rating.
Moreover the chip-scale packaging of EPC products, reduces effectively the final device cost; bringing a competitive advantage not onlyrespect to competitors in GaN but also on Silicon.
Based on a complete teardown analysis, the report also provides an estimation of the production cost of the epitaxy and the package.
Moreover, the report proposes a comparison with the previous EPC devices and epitaxy; and GaN Systems, Transphorm, Panasonic and TIpackaging. This comparison highlights the differences in design and manufacturing process and their impact on device size and productioncost.
Finally, the report shows a comparison between the standars 100V Si MOSFETs and the EPC GaN on Si HEMT.
©2017 by System Plus Consulting | TI LMG3410 4
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
GaN Device Market
Courtesy of Yole Developpement
©2017 by System Plus Consulting | TI LMG3410 5
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
The reverse costing analysis is conducted in 3 phases:
Teardown analysis
• Package is analyzed and measured• The dies are extracted in order to get overall data: dimensions, main blocks, pad number and pin out, die marking• Setup of the manufacturing process.
Costing analysis
• Setup of the manufacturing environment• Cost simulation of the process steps
Selling price analysis
• Supply chain analysis• Analysis of the selling price
Reverse Costing Methodology
©2017 by System Plus Consulting | TI LMG3410 6
Overview / Introduction
Company Profile & Supply Chain o EPC Profileo EPC GaN Products
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Part Number Configuration Drain Current (A) Package RdsON (mohm)
EPC2038 Single with Gate Diode 0.5 BGA 0.9 x 0.9 3300
EPC2037 Single 1.7 BGA 0.9 x 0.9 550
EPC2107 Dual with Sync Boot 1.7 BGA 1.35 x 1.35 390
EPC8010 Single 2.7 LGA 2.05 x 0.85 160
EPC2036 Single 1.7 BGA 0.9 x 0.9 73
EPC2106 Half Bridge 1.7 BGA 1.35 x 1.35 70
EPC2007C Single 6 LGA 1.7 x 1.1 30
EPC2016C Single 18 LGA 2.1 x 1.6 16
EPC2001C Single 36 LGA 4.1 x 1.6 7
EPC2045 Single 16 BGA 2.5 x 1.5 7
EPC2104 Half Bridge 23 BGA 6.05 x 2.3 6.3
EPC2032 Single 48 BGA 4.6 x 2.6 4
EPC2022 Single 90 LGA 6.05 x 2.3 3.2
EPC 100V GaN products
• EPC proposes different 100V GaN on Si transistors:
Analized device
©2017 by System Plus Consulting | TI LMG3410 7
Overview / Introduction
Company Profile & Supply Chain o EPC Profileo EPC GaN Products
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
EPC2045 Datasheet
©2017 by System Plus Consulting | TI LMG3410 8
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Synthesis of the Physical Analysis
Package :
o Dimensions: xxxmm x xxxmm xxxxmm
o Connections: solder balls
FET:
o Dimension: xxxmm x xxxmm = xxxx mm²
Solder balls
GaN FET
Package opening – Optical View
©2017 by System Plus Consulting | TI LMG3410 9
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
o Package size : xxxmm x xxxmm x xxxxmm
o The package markings include the following markings :
2045
7208
3791
Package characteristics
Package Front view Package Back viewPackage Side view
Reference of component
Lot date code
Lot date code
©2017 by System Plus Consulting | TI LMG3410 10
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package Cross-Section
Package cross section IC – Cross section #1 - SEM View
xxx µm
Cross section #1
Cross section #3
Package cross section IC – Cross section #3 - SEM View
Cross section #2
©2017 by System Plus Consulting | TI LMG3410 11
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Package Cross-Section #1
Ball cross-section – SEM view
©2017 by System Plus Consulting | TI LMG3410 12
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
xxx
mm
FET die Dimensions
FET Die – Optical view
o Die dimensions: xxx mm² (xxxmm x xxxxmm)
o There is no marking on the die
xxxx mm
©2017 by System Plus Consulting | TI LMG3410 13
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die process
Drain metal stripMetal 3
Source metal stripMetal 3
Gate
©2017 by System Plus Consulting | TI LMG3410 14
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die process
89.6 µm
Transistor process after delayering – SEM View
1 µm 8.38 µm
Contact between the xxx of the xxx and the Gate Supply Line.
Transistor process after delayering – SEM View
©2017 by System Plus Consulting | TI LMG3410 15
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
o Substrate thickness: xxx µm
©2017 by System Plus Consulting | TI LMG3410 16
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section
Die cross section – SEM View
©2017 by System Plus Consulting | TI LMG3410 17
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Die cross section- Drain
Die cross section – SEM View
©2017 by System Plus Consulting | TI LMG3410 18
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis o Synthesiso Packageo GaN FET
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
EDX epitaxy
©2017 by System Plus Consulting | TI LMG3410 19
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo FET Fab Unito FET Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Description of the Wafer Fabrication Units - FET
In our calculation, we simulate a production unit using xxxxmm wafers.
Estimated FET wafer fab unit:
Name: xxxxx, xxxx
Wafer diameter: xxxmm (xxx-inch)
Capacity: xxx wafers / month
Year of start: xxxx
Most advanced process: xxxxµm
Products: Silicon power die, GaN and SiC
Location: xxxxxxx
©2017 by System Plus Consulting | TI LMG3410 20
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo FET Fab Unito FET Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
GaN Transistor - Process Flow (2/4)
Implantation
• Implantation in the AlGaN layer
• Implantation in the gate GaN layer
Gate
•Pattern and GaNetching
Gate
•TiN deposition
•Pattern Gate Metal
Drawing not to Scale
TiN
©2017 by System Plus Consulting | TI LMG3410 21
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo FET Fab Unito FET Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
GaN Transistor - Process Flow (4/4)
Metal 2 and 3
•Tungsten plug
•Metal2
• IMD 2
Passivation
• Silicon contact
•Metal 3
•Passivation deposition and pattern
Drawing not to Scale
W plugMetal 2IMD 2
Metal 3
Contact between the metal 3 and the silicon substrate
©2017 by System Plus Consulting | TI LMG3410 22
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Yields Explanation
The wafers and dies are tested during the process flow. There are 2 types of test :
The tests on the physical characteristics of the wafer like the thickness deposited.
The tests on the electrical functionalities of the die.
The difference is important because with the physical test, a bad result means a problem on a step and all the dies on the wafer are defective, so the wafer is scrapped. Usually these yields are good for mature technologies.
The tests on the dies are different. Each die is tested, one by one or simultaneously using “parallel” tests, and only the defective dies are scraped. During the probe test which is realized on the wafer, the defective dies are marked and are not assembled in package.
Yield Apply on Description
Manufacturing Yield FET The defective wafers are scraped
Probe yield FET
The defective dies are scrapedThe number of good dies is function of the probe yield. Only the good dies are assembled in the package
Dicing Yield FET The defective dies are scraped
Packaging yield FET + Package The defective components are scraped
Final test yield FET + Package The defective components are scraped
©2017 by System Plus Consulting | TI LMG3410 23
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
FET Front-End Cost
The front-end cost ranges from $xxx to $xxxx accordingto yield variations.
The main part of the wafer cost is due to the xxxxxxxxxx%. The epitaxy steps represent a large part ofconsumable and equipment cost (see details in thefollowing pages).
©2017 by System Plus Consulting | TI LMG3410 24
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
FET Wafer Cost per process steps
©2017 by System Plus Consulting | TI LMG3410 25
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Packaging Cost
Packaging
The component has not packaging, but connection with solder balls. These connections are probablymanufactured by xxxx.
The cost is estimated between $xxx and $xxxx per wafer.
©2017 by System Plus Consulting | TI LMG3410 26
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
About System Plus
Component Cost
The component cost ranges from $xxx to $xxxx accordingto yield variations.
The FET die manufacturing represents xxxx% of thecomponent cost.
Final test and yield losses account for xxxx% of thecomponent cost.
©2017 by System Plus Consulting | TI LMG3410 27
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Plus
Estimated Manufacturer Price
The component selling price ranges from $xxxto $xxxx according to yield variations.
Gross Margin 50.0%
EPC (Estimated)
©2017 by System Plus Consulting | TI LMG3410 28
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparisono EPC GaN FETo Packaging of GaN HEMTo 100V GaN vs Si
About System Plus
Comparison between EPC GaN FET
FET Year VoltageCurrent at 25°C
Die SizePower density
Pitch EpitaxyWafer
thicknessComponent
Cost
EPC2010 2010 200V 12A xxx mm2 xxx W/mm2 xxx µm xxx µm xxx µm xxx $
EPC 2040 2015 15 V 28 A xxx mm2 xxx W/mm2 xxx µm xxx µm xxx µm Xxx $
EPC2045 2017 100V 16A xxx mm2 xxx W/mm2 xxx µm xxx µm xxx µm xxxx $
EPC2010 EPC2040EPC2045
©2017 by System Plus Consulting | TI LMG3410 29
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparisono EPC GaN FETo Packaging of GaN HEMTo 100V GaN vs Si
About System Plus
Comparison between 100V GaN on Si and Si MOSFET
Manufacturer FET Year VoltageCurrent at 25°C
Die Size Rson Pitch EpitaxyWafer
thicknessPackaging Die Cost
Component Cost
Vishay Si7454DDP 2012 100 V 21 A xxx mm2 xxx mOhm xxx µm xxx µm xxx µm Power Pak $xxx $ xxx
EPC EPC2045 2017 100 V 16 A xxx mm2 xxx mOhm xxx µm xxx µm xxx µm - $ xxx $ xxx
EPC2045Si7454DDP
EPC
The FOM of GaN HEMT is better that standard Si MOSFET.
From the point of view of cost the Si is still competitive on die level. The packaging has a big impact on thefinal cost.
©2017 by System Plus Consulting | TI LMG3410 30
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
Power Semiconductors & Compound• Transphorm GaN-on-Silicon HEMT TPH3206PS• Efficient Power Conversion EPC2040• GaN Systems GaNpx Top Cooled – AT&S ECP®
Embedded Power Die Package• Transphorm TPH3002PS 600V GaN on Silicon
HEMT• GaN Systems – 650V GaN on Silicon HEMT AT&S
ECP® Embedded Power Die Package • EPC2010 GaN 200V power transistor• Infineon – IPB60R280C6 600V CoolMOS C6
MOSFET• Toshiba – TK31E60W 4thgen DTMOS 600V Super-
Junction MOSFET• GaN on Si HEMT vs SJ MOSFET : Technology and
Cost Comparison
Related Reports
MARKET AND TECHNOLOGY REPORTS - YOLE DÉVELOPPEMENT
Power Semiconductors & Compound• Power MOSFET 2017: Market and Technology Trends• Power GaN 2016: Epitaxy and Devices, Applications, and
Technology Trends
©2017 by System Plus Consulting | TI LMG3410 31
COMPANYSERVICES
©2017 by System Plus Consulting | TI LMG3410 32
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Business Models Fields of Expertise
Custom Analyses(>130 analyses per year)
Reports(>40 reports per year)
Costing Tools
Trainings
©2017 by System Plus Consulting | TI LMG3410 33
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
About System Pluso Company serviceso Related reportso Feedbackso Contacto Legal
Contact
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