epc2052 thermal spice model for web - gallium nitride ......epc2052 fea thermal simulation • the...
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Efficient Power Conversion Corporation
Thermal Model of EPC2052
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EPC2052 FEA thermal simulation
• The thermal model applies to EPC2052.
• A power dissipation of 1 W in the device active area is
assumed.
• Finite element analysis (FEA) thermal simulations
– RΘJB and RΘJC are obtained by stationary simulations.
– ZΘJB and ZΘJC are obtained by transient simulations.
• R-C thermal model is generated.
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EPC2052 device structure
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Steady-state RΘJB
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Typical RΘJB = 15 °C/W
• Operating condition: Power = 1 W in the active area.• Boundary condition: Temperature of top of solder bars set to be 300 K.
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Steady-state RΘJC
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Typical RΘJC = 2 °C/W
• Operating condition: Power = 1 W in the active area.• Boundary condition: Temperature of bottom of the device backside set to be 300 K.
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ZΘJB R-C thermal model
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ModelParameter
Value Unit
Rth1 1.41E+01
°C/WRth2 5.27E-01
Rth3 1.39E-01
Cth1 2.96E-03
J/°CCth2 9.99E-04
Cth3 4.05E-04
Rth1 Cth1
Rth2 Cth2
Rth3 Cth3
th junction
tl board
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ZΘJC R-C thermal model
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ModelParameter
Value Unit
Rth1 1.56E+00
°C/WRth2 2.93E-01
Rth3 9.02E-02
Cth1 1.60E-03
J/°CCth2 8.40E-04
Cth3 2.49E-04
Rth1 Cth1
Rth2 Cth2
Rth3 Cth3
th junction
tl case
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The end of the
road for silicon…
but a clear road
ahead for GaN
FETs and ICs!
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