epl critical review - sematech · ngl workshop, pasadena, ca epl critical review 08/29/01 1 epl...
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NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 1
EPL Critical Review
Nikon/IBM/Selete
Outline: 1. Introduction 2. Program Overview3. Technology Development4. Summary
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 2
1) Overview of EPL programsincluding target devices and schedule(especially for Selete/Nikon)
2) Report of latest status of technologydevelopment
Purpose of EPL Critical Review
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 3
Status since 4th NGL Workshop - 1
1) e-Lith program cancelled in Dec. 2000.U.S. device manufacturers, mask suppliers, etc. interested in EPL have been groping for the new EPL organization.
2) Selete officially decided to support EPL. Selete will identify and resolve critical issues
in EPL, in cooperation with suppliers and overseas EPL interested groups.
Nikon expects Selete to function like “a coreof EPL virtual consortium”.
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 4
Status since 4th NGL Workshop - 2
3) IBM EO column delivered to NikonThe electron optical column for EB Stepper hasbeen installed at Nikon’s Kumagaya Factory.
4) Active Infrastructures (presented on 8/30) Mask Blanks/Patterning: HOYA, DNP, TOPPAN,
MCOC/PhotronicsPost Processing Software: Seiko InstrumentsMask Repair: Seiko InstrumentsResist: TOK
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 5
*Critical issues to be addressed- Mask infrastructure
- standardization- availability
- Resolution & throughput enhancement and trade-off between them
- Stitching data- Wafer heating data- Vacuum stage
Review of 4th NGL Workshop
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 6
Agenda - Overview of EPL Program
- Introduction K. Suzuki (Nikon)
- Nikon Program Update Yamaguchi (Nikon)
- EPL’s Place in IBM’s Lithography RoadmapGomba (IBM)
- Selete EPL Program Yamabe (Selete)
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 7
Agenda -Technology Development- PREVAIL - Development Status of Electron Optics
Pfeiffer (IBM) - Design and Development Status of EB Stepper
Miura (Nikon)- EPL Mask & Data Post Processing Software
Kawata (Nikon)- Experimental Data of Resist Exposure/Aerial Image
K. Suzuki (Nikon) - Future Electron Optics Sogard (Nikon)
- Summary K. Suzuki (Nikon)
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 1
Nikon Corporation
Nikon Electron Beam Projection Lithography Program
Takeshi Yamaguchi
2001 Next Generation Lithography Workshop
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 2
Outline
1. Nikon’s NGL strategy and EPL
2. Mix and match of EPL
3. Development program and framework of EPL
4. Conclusion
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 3
95 97 99 02 05 08 11
Min
imum
Fea
ture
Siz
e (n
m)
(DR
AM
Hal
f-Pitc
h)
500
350
250
180
130
100
70
50
35
2595 97 99 02 05 08 11
1994 SIA
1997 SIA
1998 / 1999 ITRS
ITRS DRAM 1/2 Pitch2000 Update Proposal
ITRS 2000 Update Roadmap Acceleration
SEMATECH 2001 Plan(2 year cycle to 70nm)
1-1
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 4
1-2 Nikon’s NGL Strategy
No perfect solution in terms of: • Resolution• Multi-node extendibility• Throughput• Tool delivery timing• Mask infrastructure timing• Resist timingUncharted territoryMultiple Solutions (F2, EPL, EUVL) with amix&match strategy for different device types.
F2, EPL, EUVL
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 5
• ArF (193 nm) lithography will be extended to the 100 nm node and beyond using ultra-high NA and resolution enhancement technologies.
• F2 (157 nm) lithography is expected to play a major role because of its potential high throughput. But some issues, such as large birefringence, are delaying the development.
• Nikon thinks EUV lithography can be implemented, but a number of issues remain to be settled prior to development of a production worthy tool.
• EPL is attractive as a realistic tool to be in time for the 70 nm node. Nikon’s alpha tool will be completed in late 2002, and the production model will be demonstrated in 2004.
1-3 Overview of Each Lithography
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 6
CYITRS2000 DRAM(1/2pitch)SC.2.0 MPU(gate in resist)
1-4 Nikon Lithography Roadmap (for critical layers)
EUV
F2157 nm
99 00 01 02 03 04 05 06 07 08 09 10 11 12 13
180 130 90 65 45 33140 90 60 45 32 23
KrF
EPL
248 nm
ArF will be pushed below 90nm or more.
F2 will be delayed and will have a short lifetime for critical layers.
EUV timing is questionable.
EPL will be in time despite low throughput.
ArF193 nm
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 7
1-5 Why does Nikon proceed EPL ?
• Realistic technology• EPL is extendible down to 35nm node• Nikon’s EB technology dated back to 1983• Good synergetic alliance with IBM• World wide industrial support
• Large benefit will be provided to the customers
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 8
1-6 Critical issues and development status
• The alpha column is proven as its basic performance; -70nm resolution, 5mm deflection, Subfield stitching control-
• Subfield stitching; - Subfield distortion and placement are proven to be well controlled to stitch the subfield to subfield within around 5nm.
• The vacuum stage; - vacuum compatible air guide works well, and whole mechanical subsystem is under construction –
• Commercially available EPL mask is in readiness for tool timing. - -
• New concept lens modeling will provide significant improvement of the throughput.
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 9
2-1 Where EPL should be used ?
• For the 70nm node, EPL will be implemented to the critical levels, such as gate and contact layers of high performance logic. These layers are relatively difficult for ArF or F2, buteasy for EPL.
• Single binary mask cost will reduce the CoO for small volume production devices of an ASIC and SOC.
• For the 50nm node, EPL will expand the role, because F2 could not extend to this node and EUV seems not to be in time for process proven tool.
• New concept electron optics will enhance the throughput over 30 or 40 wafers/hr.
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 10
i KrF ArF
F2KrF
KrF EPL/EUVF2
i ArF
ArF
i KrF ArF
KrF
KrF EPL
i ArF
ArF
EPL
Logic device DRAM, MPU
100 nm
70 nm
50 nm
100 nm
70 nm
50 nm
2-2 Schematic View of Tool Sharing - Mix and Match
Rough Middle Critical
Rough Middle Critical
DRAM node will be delayed
Time
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 11
3-1 Nikon EB stepper Development Program CY 99 00 01 02 03 04 05 06 07
EO (100 nm/70 nm)
Body & Stage
70nm
ProductBody, Stage
EO (70 nm/50 nm)
ModelingDesign
Fabrication
Fabrication Characterization
Total Integration
Fabrication
Fabrication
Total Integration
Exposure Evaluation
Design
Characterization
Modeling
Wafer Exposure
Prototyping
Body, Stage
Fabrication
Total IntegrationFabrication
50nm
Product
70nm
R&D
New Concept Lens
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 12
3-2 Projected Tool Evolution of EPLTh
roug
hput
(WPH
30
0 m
m )
Resolution (nm)50 70 10035
40
30
20
10 R&D Tool
35nm Prod EO
CL:Critical layer 20%
DL:Dense layer 50%
New concept lens Higher speed reticle stage
New concept lens Higher speed reticle stage
CL
DL
CL
DL
CL
DL
Enhanced 3D-CVAL
Enhanced 3D-CVAL70 nm Prod
EO
50nm Prod EO
Non-complementary reticleResist : 5uC/cm2Field : 20mmx25mmReticle :200mm diam.
Nikon NSRNikon02/27/01 SPIE Meeting
Nikon
MaskResist
Data Conv.
Process
HOYA , Toppan,DNP, Photronics ・・・・ ・・・・ ・・・・ ・・・・
SELETE/ US group
World Wide Device manufacturers・・・・・・・・・・・・
Data conversion vendors , SII etc
TOK , Fuji, JSR etc.・・・・・・・・・・・・Tool suppliers …
3-3 EPL Development Framework
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 14
4-3 World Wide Industrial Support
SeleteSeleteSeleteSelete US US US US GroupGroupGroupGroup
NECNECNECNECFujitsuFujitsuFujitsuFujitsuMatsushitaMatsushitaMatsushitaMatsushitaHitachiHitachiHitachiHitachiSonySonySonySonyToshibaToshibaToshibaToshibaSamsungSamsungSamsungSamsungMitsubishiMitsubishiMitsubishiMitsubishiSharpSharpSharpSharpOkiOkiOkiOkiSanyoSanyoSanyoSanyoRohmRohmRohmRohm
Int. Int. Int. Int. SematechSematechSematechSematech
IBMIBMIBMIBMAGEREAGEREAGEREAGERETITITITIMotorolaMotorolaMotorolaMotorolaIntelIntelIntelIntelAMDAMDAMDAMDHPHPHPHPTSMCTSMCTSMCTSMCHyundaiHyundaiHyundaiHyundai
InfineonInfineonInfineonInfineonST MicroST MicroST MicroST MicroPhilipsPhilipsPhilipsPhilipsHOYA ,Toppan, DNP
Photronics……KLA .TOK, Ohlin..JSR..SII etc.
UMC
Micron
NikonNikonNikonNikon
Virtual World Wide Consortia
Each site has soft connection
Nikon NSRNikon2001 Next Generation Lithography Workshop Aug.29, 2001 15
4 Conclusions
• Current tool and infrastructure status show EPL will be promised technology.
• Nikon will demonstrate its EPL full field alpha tool capability in 2002.
• Volume production tools for early 70nm node will start to ship from 2004.
• EPL will print high resolution patterns with existing single layer resists. The resolution is extendible down to the 35 nm node.
• A new lens concept will enable high throughput to be maintained down to the 35 nm node.
5th NGL Workshop, August 2001, Selete - M. Yamabe 1
Selete EPL ProgramMasaki YAMABE
Advanced Technology Research DepartmentSemiconductor Leading Edge Technologies, Inc.
(Selete)
5th NGL Workshop, August 2001, Selete - M. Yamabe 2
Outline
Project “Asuka”Selete EPL Program
Resist and ProcessMask InspectionData Handling
Summary
5th NGL Workshop, August 2001, Selete - M. Yamabe 3
Project “Asuka”Term: April 2001 - March 2006 (5 years)Goal: Development of Infrastructures for SoC with
100 - 70nm Technology NodePrograms: Device/Process Technology: Selete, $580M (5 years)
Design Technology: STARC, $115M (5 years)Device/Process Technology Program (Selete)
Lithography and Mask– VUV Lithography and Mask– EPL (Electron-beam Projection Lithography)
FEP (Front End Process)– A transistor module, including a gate stack employing a new High k material
BEP (Back End Process)– An interconnect module including Cu and a new Low k inter-metallic dielectric
“Asuka” Research Line– Test fabrication line for the development of above items– A line consists of 300mm equipments
5th NGL Workshop, August 2001, Selete - M. Yamabe 4
Selete EPL Program
TEG Application
Data Handling Software
Mask Inspection(Transmission E-beam)
Mask Repair(Focus Ion Beam)
EPL Resist
EPL Process(PEC: Proximity Effect
Correction)
EPL Exposure Tool(Nikon E-beam Stepper)
20052004200320022001Fiscal Year (Apr-Mar)
Unit and System Evaluation
70nm Resist Fix
Operation
Improvement
Basic Study Refine performance
Feasibility Study
Operation and Improvement
Application in Asuka
Establish PEC
Process Study (Various Substrates) TEG Process Development
Install
50nm Resist Fix
Tool for Stencil Mask Tool for Membrane Mask
System Development
Total System Improved Fracturing and PEC Software Finish
Confirm PEC PrincipleBasic Study
Tool Development
Tool Finish
Evaluation & Development
TEG: Test Element Group
5th NGL Workshop, August 2001, Selete - M. Yamabe 5
Negative Tone
Resists Results
Exposure Tool: Nikon E-beam Projection Experimental 100kV Column, *: Photo: Courtesy of Nikon
Dense L/S(1:1)Dose: 8.4µC/cm2
Thickness: 300nm
Positive Tone
Sparse L/S(1:4)Dose: 15.5µC/cm2
Thickness: 200nm
Dense L/S(1:1)Dose: 5.0µC/cm2
Thickness: 250nm
HoleDose: 12.5µC/cm2
Thickness: 500nm
60nm* 60nm*
35nm* 80nm
5th NGL Workshop, August 2001, Selete - M. Yamabe 6
Resist Status
Sensitivity [100kV] (µC/cm2)
Reso
lutio
n[1:
1 L/S
] (nm
)
0
40
120
20
6080
100
0 5 1510
Target
Etching Rate (Relative)0 0.2 0.4 0.6 0.8 1.0 1.2
i-line ResistNega-1Posi-1Posi-2Posi-3Posi-4
Selete is Developing in Cooperation w/ Resist Suppliers etc.Sensitivity and Resolution: Approaching the TargetEtching Durability: ExcellentPattern Collapse: Need Control
New Process DevelopmentLine Edge Roughness: Need Evaluation and Improvement
PosiNega
5th NGL Workshop, August 2001, Selete - M. Yamabe 7
80nm Logic Gate PatternGate 80nm (Pitch 190nm)
Exposure Tool: Nikon E-beam ProjectionExperimental 100kV Column
Mask: Made by Nikon and SeleteResist: Negative Tone, 300nm thick
5th NGL Workshop, August 2001, Selete - M. Yamabe 8
Requirements for EPL Stencil Mask InspectionInspection of Deep Trench or Hole (Pattern:200nm, Si:2µm Aspect Ratio:10)High Resolution (Better than 50nm)High Speed (A Few Hour/Mask)
Results from Feasibility StudyReflection and Transmission SEM Image of Stencil Mask (HOLON EST-100)
Reflection Transmission
EPL Mask Inspection
Reflection Transmission
Selete’s PlanDevelop Transmission E-beam Inspection TechnologyTEM Type + High Speed Image Acquisition Method
5th NGL Workshop, August 2001, Selete - M. Yamabe 9
Data Handling in EPLSub Field Fracturing
Complementary Fracturing
Proximity Effect Correction
&
Selete’s PlanDevelopment of Each Sub System (Fracturing, PEC) Evaluation and Improvement of the Data Handling Software
Developments of Software are Now Under Way by Software Vendors(SII, NCS, ISS etc.)
5th NGL Workshop, August 2001, Selete - M. Yamabe 10
Mask A + BPattern Split by “M-Split”
Identification of Singular PatternsStress Check to Judge Split NeedMinute Feature CheckComplementary SplitPattern Area Density BalancingResizingEdge Shape CorrectionVerification
5th NGL Workshop, August 2001, Selete - M. Yamabe 11
SummaryProject “Asuka” has started to developthe infrastructure for 100 – 70nm node SoC
Electron-beam Projection Lithography (EPL) is one of key programs of “Asuka”, operated by Selete
Selete is developing EPL technology focusing on critical issues
PREVAILDevelopment Status of Electron Optics
Projection Reduction Exposure with Variable Axis Immersion Lenses
Hans C. PfeifferIBM Microelectronics, East Fishkill, NY
NGL Workshop EPL Critical Review
Pasadena, CA, August 29, 2001
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 1
OutlinePREVAIL Electron Optics System3D CVAL Imaging ConceptElectron Optics System OperationEarly Results:
Feature Resolution3D CVAL DeflectionDistortion ControlSubfield Stitching
Summary
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 2
Alpha E/O System at Nikon in Kumagaya, Japan
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 3
CVAL Subfield Imaging
Contrast Aperture
Wafer Plane
Reticle
2.375mm
12.35mm
1.3mm
1.3mm
#20#1
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 4
Imaging CVAL Setup
A only
A & B
Lens only
B only
Reticle
Wafer
Doublet Lens Group B
Group A
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 5
Graphic User Interface: Subfield Image Display
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 6
Stencil Reticle Examples
400 nm slots in 1.5 µm Sifor printing 100 nm linesand spaces on the wafer
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 7
1x1 mm2 Subfield Reticle (Zoom)
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 8
x:/.../Image13.TIF
70nm Pattern Features in Resist
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 9
PREVAIL Images - Deflected ± 2.375mm5mm
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 10
Subfield StitchingRequires Control of Subfield Shape & Placement
MagnificationRotationOrthogonalityTranslation
Three focus coils & two stigmators independently control:Subfield MagnificationSubfield RotationSubfield OrthogonalityFeature Resolution / Astigmatism
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 11
Subfield Stitch Pattern
Subfield 9 Subfield 11Subfield 10
Metrology MarkStitch Vernier
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 12
Subfield 9 Subfield 11Subfield 10
Subfield Stitch - Vernier SEMs
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 13
Subfield 9 Subfield 11Subfield 10
Subfield Stitch - Vernier Micrographs
9
10
11
10
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 14
Subfield Stitch - Measurement ResultsSubfield 9 Subfield 10
1
2
3
4
1 2 43Position at SF Boundary
Bar S
paci
ng -
nom
(nm
)102030
0
Vertical Stitching data1σσ = 14.8nm
-10-20-30
1 2 43Position at SF Boundary
Bar S
paci
ng -
nom
(nm
)
0
5
10
15
20
25
Horizontal Stitching data1σσ = 1.9nm
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 15
SummaryThe PREVAIL electron optics subsystem developed at IBM has been installed at Nikon's facility in Kumagaya, Japan, where it will be integrated into the Nikon commercial EPL stepper tool by YE 2001Cornerstone of the electron optics design is the Curvilinear Variable Axis Lens (CVAL) technique originally demonstrated with a Proof of Concept (POC) systemEarly results obtained with the new PREVAIL electron optics subsystem have demonstrated sub-100nm resolution, sub-10nm distortion and encouraging subfield stitching
H. C. Pfeiffer PREVAIL - Development Status of Electron Optics 08/29/2001 Pg 16
NGL010829HANDOUT 1
Nikon Nikon NSR
Nikon Electron Beam Projection
Lithography System:
Design and Development Status of EB Stepper
Takaharu Miura
Nikon Corporation
NGL010829HANDOUT 2
Nikon Nikon NSR
Presentation OutlineFundamental System Concept
Total Development Strategy
Vacuum Air Guide Stage Development Status
Main Body and Control System Development Status
Overall Summary
NGL010829HANDOUT 3
Nikon Nikon NSR
EPL System Exposure Concept
DeflectorStage ContinuousMovement
Reticle Stage
Reticle
Beam Deflection
Sub-field: 1mm
Sub-fields
Deflector
Beam Deflection Wafer Stage
Sub-field: 0.25mm
Wafer
Stage ContinuousMovement
Projection Lens 1/4 Mag.
Scan
Scan
Step
NGL010829HANDOUT 4
Nikon Nikon NSR
ReticleLoadStation
Load LockVacuum
ReticleLoader
VacuumSystem
WaferHandler
Cassette
WaferLoader
ReticleStage
WaferStage
Reticle VacuumChamber
IlluminationColumn
Wafer VacuumChamber
Reticle
Inte
rfer
omet
erO
ptic
sIn
terf
erom
eter
Opt
ics
WaferBackscattered Electron Detector
Load Lock Vacuum
LoadLock
ProjectionLens
Mirror
Mirror
AF/AL
AF/ALAF/AL
AF/ALAlignment / Observation Scopes
LoadLock
EnvironmentalChamber
Prealigner
EPL Mechanical System Block Diagram
3-Point AVIS System
Laser I/F
Laser I/F
NGL010829HANDOUT 5
Nikon Nikon NSR
Technology
Combination
-EB-Vacuum
S205, S305
- High Stiffness
- Vibration-free Concept- Reaction Force Cancel
- Enhanced Vibration-free- Momentum Conserv. Design
- Modular StructureMake most use of Nikon’s expertise!
‘01
‘99
‘98S204
S203
Platform Family
- For 300mm Wafer
‘96~97
S201, S202
‘98~‘99
S202/300, S302
Optical Lithography Tool
EB60~~~~
CD180
‘83~~~~
~‘96
EB1 ProtoR&D Tool
EB2 Production
Tool
‘03 ’04~~~~
1st VacuumBody & StageMagnetic Field
management
HigherThroughput
Small Footprint
ElectronElectronElectronElectron BeamBeamBeamBeam
LithographyLithographyLithographyLithographyTool
Body Platform Development Strategy
NGL010829HANDOUT 6
Nikon Nikon NSR
Vacuum Wafer/Reticle Handler
Magnetic Shield
ManagementNew Control
Function・・・・Filter/Predictor
Vacuum & Magnetic Shield
・・・・Air Guide・・・・Linear Motor
Wafer HeCooling
New Development & New Design Areas
System Control
Stage
Heat Management
Reaction ForceCanceller Vacuum
・・・・System Control・・・・OutgasMain Body
Common Technologyestablished byOptical Scanner
Common Engineeringestablished byEB60, CD180
EPLNew Development Item
NGL010829HANDOUT 7
Nikon Nikon NSR
見える誤差
見える誤差
見える誤差
見える誤差
General Design Strategy for Writing Accuracy
WS Motion Control Error
by I.F.RS Motion
Control Error by I.F.
Filter/Predictor Correction
Performance
E-Beam Shift due to E/O Column mechanical deformation and
Magnetic Field Variation
Body Metrology Frame Deformation due to stress and
thermal variation
Observable
Un-observable
Total Motion Control Analysis
E/O & Mask Error
Structual & Magnetic Model Analysis
E/O Writing Accuracy Estimation
NGL010829HANDOUT 8
Nikon Nikon NSR
Basic Development Strategy Summary
Make most use of the following Nikon’s expertise.
Optical Scanner Synchronization Control Technology
CAE Technology for Vacuum Body/Stage Design Optimization
Optical Scanner Air-guide Stage TechnologyOptical Scanner Software LibraryEB Instrument Technology with NTTVacuum Instrument Technology with NTT
NGL010829HANDOUT 9
Nikon Nikon NSR
Nikon’s EPL Stage Key Design Concept
Vacuum Compatible Air Bearing GuidesLow ParticulatesLow HysterisisLow Maintenance
Linear MotorsHigh Performance (Speed, acceleration, bandwidth)High Magnetic Shielding to minimize electron optics disturbances
Piezo-driven Leveling TableHigh controllability and no magnetic field
Reaction Force CancelingReaction forces from the stages are are passed to an
external frame structure to reduce body disturbance.
NGL010829HANDOUT 10
Nikon Nikon NSR
1-Axis Vacuum Airguide Testset
Low vacuum pipe
Airpad Air supply pipe
High vacuum pipe
Assembly & Sealing Procedure Determination
Special Ceramics Surface Coating
Gas leak & Outgas Measurement
NGL010829HANDOUT 11
Nikon Nikon NSR
Production Air Stage for Optical Scanner
Movable Mirror
Linear MotorAir Guide (X)
Linear MotorAir Guide (X)
Linear MotorAir Guide (Y)
Granite Base
Wafer Holder
Laser Interferometer
(X)
NGL010829HANDOUT 12
Nikon Nikon NSR
-30
-20
-10
0
10
Amplitude [dB]
12 3 4 5 6 7 8 9
102 3 4 5 6 7 8 9
1002 3 4 5
Frequency [Hz]
Reticle Stage Velocity Servo Frequency Response CurveY Scan Axis
Enough Performance. OK
NGL010829HANDOUT 13
Nikon Nikon NSR
Reticle Stage Motion Control Simulation Simulation Condition & Requirement for E/O correction;
Scan velocity 0.4[m/s]
Average acceleration 2[m/s2]
Allowable Synchronization error
< 5[um]Calculated Error <1μμμμ
OK
NGL010829HANDOUT 14
Nikon Nikon NSR
Vacuum Air guide Stage SummaryEPL Vacuum Airguide Stages have been developed and
prototyped in order to verify their performances. According to the results, we are confident that these stages meet the required performances for the EPL system in terms of motion controllability, outgassing, magnetic shielding.
Stages use vacuum-compatible air bearings and are driven by shielded linear motors.
Table leveling on stage is driven by piezo actuators.
Total simulation models of the stage and control system have been developed and experimental data taken on the prototype stages show good collation with simulation results.
NGL010829HANDOUT 16
Nikon Nikon NSR
In collaboration with IBM, Nikon has accomplished a In collaboration with IBM, Nikon has accomplished a tremendous amount of design and engineering effort in the past tremendous amount of design and engineering effort in the past years and now years and now entering the product fabrication phaseentering the product fabrication phase. Software . Software development is now going on schedule.development is now going on schedule.
Thermal analysisThermal analysis has been done to improve the design of the stages, has been done to improve the design of the stages, actuators, and electron optics components. actuators, and electron optics components. Thermal DataThermal Data were taken on were taken on prototype Linear Motors and Stages.prototype Linear Motors and Stages.
Experimental tests, theoretical analysis, and FEM Experimental tests, theoretical analysis, and FEM modelings modelings for magnetic for magnetic shield were carried out to optimize the shield were carried out to optimize the magnetic shieldingmagnetic shielding of the system and of the system and the the air bearingair bearing design.design.
This effort together with IBMThis effort together with IBM’’s electron optics expertise and s electron optics expertise and NikonNikon’’s EB related system and precision body/stage expertise s EB related system and precision body/stage expertise will will ensure the achievement of high performance EPL system.ensure the achievement of high performance EPL system.
Overall Summary
2001 NGL Workshop EPL Critical Review Pasadena,CA1
1 08/29/2001 S.KNikon NSRNikon
EPL Reticle and Pattern Data Post-Processing Development
Nikon Corporation
Outline: 1. Introduction 2. Reticle Development
3. Infrastructure Development 4. Pattern Data Processing5. Summary
2001 NGL Workshop EPL Critical Review Pasadena,CA2
2 08/29/2001 S.KNikon NSRNikon
200mm EPL Stencil Reticle
Si membrane (2μμμμm)
Minor Strut
Membrane area Major Strut
Stencil Pattern
2001 NGL Workshop EPL Critical Review Pasadena,CA3
3 08/29/2001 S.KNikon NSRNikon
200mm EPL Reticle Format
displacementmeasurement marks
1.3
1.3
54.43
132.57
Si substrate(φ200)
Major strut
0.17
MinorStrut
Si membrane
2μμμμm
725 μμμμm
Minor StrutElectron Beam
170 μμμμm
1.13mmSkirt1mm
Pattern Area (1x1mm2)
2001 NGL Workshop EPL Critical Review Pasadena,CA4
4 08/29/2001 S.KNikon NSRNikon
EB Reticle Fabrication Process Flow
2001 NGL Workshop EPL Critical Review Pasadena,CA5
5 08/29/2001 S.KNikon NSRNikon
Blank Fabrication using SOI Wafer
Advantage:
-Easy control of Si Membrane Thickness
-Vertical Strut Fabrication by Dry Etching
Disadvantage:
- Compressive Stress due to SiO2
Compressive Stress Membrane
Silicon Membrane
SOI Wafer
Silicon SubstrateSiO2 Layer
(Etch Stop)
Membrane Etching
+
Removal of Oxide Layer
Membrane Stress has to be Adjusted.
2001 NGL Workshop EPL Critical Review Pasadena,CA6
6 08/29/2001 S.KNikon NSRNikon
EPL Reticle Development at Mask Manufactures
-Mask Manufactures have started to develop EPL
Reticle.(DNP,Toppan,HOYA,Photronics).
-100mm fabrication processes are almost completed.
(Commercially available)
-They are in 200mm development phase.
-200mm reticle (sample) will be delivered in 2002.
2001 NGL Workshop EPL Critical Review Pasadena,CA7
7 08/29/2001 S.KNikon NSRNikon
100mm Reticle Development
Nikon75mm reticle for experiment & technology develop.
Expected Reticle Type Deliver Schedule
CY 99 00 01 02 03 04 05 06 07 08 09 10 11 12 13
200mmReticle
Development200mm Production Reticle
Stencil Type(Standard Type)
Continuous Membrane Type
EB Reticle Delivery Schedule
EPL first tool
Mask Manufactures
DNP,Toppan,HOYA,Photronics
2001 NGL Workshop EPL Critical Review Pasadena,CA8
8 08/29/2001 S.KNikon NSRNikon
Reticle Fabrication Issues/Infrastructures
Items(Developers)
Pattern Design
Pattern Split
Fabrication Process
Pattern Inspection
Pattern Repair
Reticle Cleaning
Design Platform ((((Seiko Instruments/SII,Nikon))))Proximity Correction((((Selete,SII))))
Data Split (Selete,ISS,SII) / Commercially available
Reticle Blank Fabrication, Reticle Fabrication (Mask Manufactures /DNP,Toppan,HOYA,Photronics)
Optical Rough Search System, EB Inspection System(Selete + αααα)/planning
FIB Repair System (SII) / planning In process::::Megasonic Cleaning
In-situ Cleaning:Ar-aerosol Cleaning (Sumitomo Heavy Industries)
- Stencil Reticle Case
Metrology Laser X-Y, LMS IPRO (Leica)
2001 NGL Workshop EPL Critical Review Pasadena,CA9
9 08/29/2001 S.KNikon NSRNikon
Stencil Pattern DUV Image for Inspection
Microscope:Nikon LU2000----DUV -DUV wavelength 266nm ( ( ( (DUV Review Station)))) -Mode: Transmission Image Reflection Image
Transmission Image
-Sample Si Stencil Reticle Si thickness 2μμμμm.
- Detectable Defect size:>50nm
1µm
2001 NGL Workshop EPL Critical Review Pasadena,CA10
10 08/29/2001 S.KNikon NSRNikon
Stencil Pattern SEM Image for Inspection
Secondary Electron Image Transmission Electron Image
Lines 0.9μμμμm and Spaces1.1μμμμm
Using Holon Stencil Mask Inspection Microscope.
2001 NGL Workshop EPL Critical Review Pasadena,CA11
11 08/29/2001 S.KNikon NSRNikon
Repair of Opaque and Clear Defect with FIB
◆Principle of the FIB etching
adhesionsubstrate
FIB
Ga+
Etching gasif need,
opaque defect
scan
milling reactive etching
Ga+
Ga++
substrate
deposition
precursor gas
FIBheating,if needed
adhesion
scan
◆Principle of FIB induced deposition
Opaque defect Clear defect
2001 NGL Workshop EPL Critical Review Pasadena,CA12
12 08/29/2001 S.KNikon NSRNikon
DLC Repair Patterns
Si membrane
Repair Pattern
SIM image of printable DLC repair patterns deposited by FIB(SII)across a 1μm width slot in a 2μm thick Si-membrane.The repair pattern: width 0.15μm, height 1μm.
1μμμμm
(Diamond Like Carbon)
2001 NGL Workshop EPL Critical Review Pasadena,CA13
13 08/29/2001 S.KNikon NSRNikon
Opaque Defect Repair on Stencil Reticle using FIB Milling
Afeter Opaque Defect Repair
Opaque Defect
1μμμμm0.5μμμμm
FIB Milling Condition FIB(SII) :Acc=30kVI=20pA
2001 NGL Workshop EPL Critical Review Pasadena,CA14
14 08/29/2001 S.KNikon NSRNikon
Outer Bath(stainless)
Transducer
Inner Bath(quartz
CleaningLiquid
Reticle
Inner Bathsupporter
Liquid(pure water)
◆◆◆◆ Schematic diagram of megasonic cleaner
Megasonic Cleaning
2001 NGL Workshop EPL Critical Review Pasadena,CA15
15 08/29/2001 S.KNikon NSRNikon
Megasonic Cleaning of Stencil Reticle
before megasonic cleaning
after megasonic cleaning
•Condition of megasonic cleaningfrequency = 1 MHzinput power = 300 Wcleaning liquid : surfactant (pH 12)
Particle (Al2O3) > 0.1um
2001 NGL Workshop EPL Critical Review Pasadena,CA16
16 08/29/2001 S.KNikon NSRNikon
Ar Aerosol Cleaning
Mass FlowMass FlowMass FlowMass FlowControllerControllerControllerController
Ceramic FilterCeramic FilterCeramic FilterCeramic FilterHeat ExchangerHeat ExchangerHeat ExchangerHeat Exchanger
NozzleNozzleNozzleNozzle
WaferWaferWaferWafer
Purge GasPurge GasPurge GasPurge Gas
Dry PumpDry PumpDry PumpDry Pump
Process ChamberProcess ChamberProcess ChamberProcess Chamber
Ar Ar Ar Ar GasGasGasGas
NNNN2222 GasGasGasGasCryogenic Cryogenic Cryogenic Cryogenic Refrigerator Refrigerator Refrigerator Refrigerator
XXXX----Y Scan Y Scan Y Scan Y Scan StageStageStageStage
Accelerator Accelerator Accelerator Accelerator NozzleNozzleNozzleNozzle
◆ Schematics of the Gas Flow (Sumitomo Heavy Industries, Ltd)
Mass Flow Mass Flow Mass Flow Mass Flow ControllerControllerControllerController
Ceramic FilterCeramic FilterCeramic FilterCeramic FilterNNNN2222 GasGasGasGas
NNNN2222 GasGasGasGas
Mass Flow Mass Flow Mass Flow Mass Flow ControllerControllerControllerController
Ceramic FilterCeramic FilterCeramic FilterCeramic Filter
Mass Flow ControllerMass Flow ControllerMass Flow ControllerMass Flow Controller
2001 NGL Workshop EPL Critical Review Pasadena,CA17
17 08/29/2001 S.KNikon NSRNikon
before cleaning after cleaning
Ar Aerosol Cleaning of Stencil Reticle (Al2O3, >0.1mm)
2001 NGL Workshop EPL Critical Review Pasadena,CA18
18 08/29/2001 S.KNikon NSRNikon
Reticle Case
2001 NGL Workshop EPL Critical Review Pasadena,CA19
19 08/29/2001 S.KNikon NSRNikon
Pattern Data Handling
Pattern Data Handling for EPL Stencil Reticle:
-Subfield Segmentation
-Complimentary Division/ Split
- Proximity Effect Correction
Several software venders have been developing new data handling software for EPL.
2001 NGL Workshop EPL Critical Review Pasadena,CA20
20 08/29/2001 S.KNikon NSRNikon
Layout dataLayout data Subfield segmentationSubfield segmentation
Data Post-Processing Software for EPL 1
Reticle imageReticle image
2001 NGL Workshop EPL Critical Review Pasadena,CA21
21 08/29/2001 S.KNikon NSRNikon
Stitching Stitching boudary boudary treatmenttreatment Proximity effect correctionProximity effect correction
Fuzzy boundaryFuzzy boundaryComplementary divisionComplementary division
Data Post-Processing Software for EPL 2
2001 NGL Workshop EPL Critical Review Pasadena,CA22
22 08/29/2001 S.KNikon NSRNikon
Summary1.There is no physical showstopper in reticle-process.
Technical issues are being discussed.
2. Reticle commercialization is in progress.
Mask manufactures have been developing EPL reticle.
3. Reticle infrastructure issues are fixed technically.
Commercial tooling should be discussed.
4. Data post-processing software is commercially available.
5. Reticle-related activities are waiting an external trigger
for the next step.
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 1
Nikon NSRNikon
Experimental Data of Resist Exposure/Aerial Image
Nikon Corporation
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 2
Nikon NSRNikon
Nikon’s 100keV experimental column
Accelerating Voltage: 100kV.
Beam Current: 1-50µA
at the reticle.
Sub-field: 1mmx1mm
on the reticle.
NA:1-3 mrad.
Magnification: 1/4 with SMD
(Symmetrical Magnetic Doublet)
electron lens.
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 3
Nikon NSRNikon
Resist images exposed by Nikon’s 100kV column
60nm L/SNegative tone,
0.2µm-thickness80nm Holes
Positive tone,0.7µm-thickness
50nm iso-L & L/SNegative tone,
0.3µm-thickness
35nm iso-L
40nm iso-LNegative tone,
0.2µm-thickness
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 4
Nikon NSRNikon
Resist resolution for 1:2Holes/Spaces on the EPL
FEP-136(FUJIFILM ARCH)Thickness=500nmExpose dosage=9.0µC/cm2
Exposed with Nikon’s EPL experimental column(EB Acc=100kV)
90nm
80nm
70nm
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 5
Nikon NSRNikon
The DOF in EPLResist: NEB22(Sumitomo)
film thickness=260nmexposure dosage=47µC/cm2
Column condition:Nikon’s EPL experimental column
NA=1.3mradbeam current density=10mA/cm2
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 6
Nikon NSRNikon
Aerial Image Sensing technique
0
0.2
0.4
0.6
0.8
1
-40 -30 -20 -10 0 10 20 30 40Beam position(nm)
Nor
mal
ized
bea
m e
dge
prof
ile
12%
88%
13nm
Resolution for image blur measurement is <10nm and its repeatability is 3nm(3σ).
Rectangular EBMembraneknife edge
Scan
Scattered electrons
Limiting Aperture
diodedetector
Schematic diagram of Aerial Image Sensor Beam profile measurement
NGL Workshop, Pasadena, CA EPL Critical Review Aug-29-2001 7
Nikon NSRNikon
Stigmator calibration by EB-AIS
05
1015202530354045
-20 -15 -10 -5 0 5 10 15 20
Focus setting (µm)
Imag
e bl
ur (n
m)
05
1015202530354045
-20 -15 -10 -5 0 5 10 15 20
Focus setting (µm)
Imag
e bl
ur (n
m)
(a) Before the optimization(Stigmator coil current: 41.2 mA)
(b) After the optimization(Stigmator coil current: 44.4 mA)
X direction Y direction
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 11NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Possibility of Throughput Enhancement Possibility of Throughput Enhancement (Future Electron Optics)(Future Electron Optics)
Kazuya OKAMOTO and Kazuya OKAMOTO and Michel R. SOGARDMichel R. SOGARD
Nikon Corporation, Nikon Research Corporation of AmericaNikon Corporation, Nikon Research Corporation of America
1.1. Motivation: Planar CMOS grand challengesMotivation: Planar CMOS grand challenges2.2. EPL feature and extensibility requestEPL feature and extensibility request3.3. EPLEPL--EO developmentEO development4.4. EO Strategy for high throughput EPLEO Strategy for high throughput EPL5.5. Dynamic image correctionDynamic image correction6.6. New high throughput systemNew high throughput system7.7. EPLEPL--EO extensibility (plan) EO extensibility (plan) 8.8. ConclusionsConclusions
AgendaAgenda
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 22NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Source: International SEMATEC annual report 2000Source: International SEMATEC annual report 200020012001
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 33NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Trade-off
Coulomb Effect Aberrations
CVAL●●●● Beam currentcation
EPLEPL--EO development EO development to achieve high resolution & high throughputto achieve high resolution & high throughput
ReductionReduction
Beam current Beam current margin margin increase increase
ReductionReduction
High beam currentHigh beam current
High throughputHigh throughput
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 44NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
EO extendibilityEO extendibilityBlur
NA
100nm
Reduction of the total blur
Aberrations Coulomb effect
70nm
50nm
Electron Optics Lens Electron Optics Lens TypeType
35nm
EOLEOL--100100
EOLEOL--7070
EOLEOL--5050
EOLEOL--3535
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 55NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
EO development EO development to achieve high throughputto achieve high throughput
1)1) Precise fabrication and assembly technology:Precise fabrication and assembly technology:Nikon’s strength.
2)2) Unique deflector structure similar to ideal cases: Unique deflector structure similar to ideal cases: IBM has invented.
3) 3) Fabrication error correction elements:Fabrication error correction elements:Stigmators, some correction elements, ….
4)4) CVAL trajectory optimization:CVAL trajectory optimization:Higher-order aberration consideration
5)5) Dynamic correction methodologyDynamic correction methodology6)6) Low onLow on--axis chromatic aberrations:axis chromatic aberrations:
Stencil reticle or thin-membrane recticle (DLC…)
((W. Stickel (IBM): JVST 1999)W. Stickel (IBM): JVST 1999)
Reduction of the geometric aberrationsReduction of the geometric aberrations
The target of an exposure system is to attain higher throughput and better resolution capability compatibly.
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 77NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Optimization of every EO parameter:Column length LSystem magnification MSF size SFBeam energy VNABeam current I
High performance resist: high sensitivity <5uC/cm2 with high resolution
δ= CL 5/4・I 5/6・M
V 3/2・α 3/5・SF 1/2Stochastic blur:
Deflectors (including electronics), body designReticle size, Chip size Aberration
HVPS, gun emittanceLow resist sensitivityWafer heating
ThroughputAberration
Reduction of the Coulomb blur:Reduction of the Coulomb blur:
EO development EO development to achieve high throughputto achieve high throughput
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 88NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
40455055606570
5 7 9 11
blu
r(n
m)
Hollow beam illuminationHollow beam illumination
ReticleReticle
Blur (nm)Blur (nm)
NA (mrad)NA (mrad)
ConventionalConventional
HollowHollow
OffOff--axisaxis
OnOn--axisaxis
Hollow illumination is very effective to suppress the Coulomb efHollow illumination is very effective to suppress the Coulomb effect.fect.
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 99NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Hollow beamHollow beam
Golladay (IBM) et al. Golladay (IBM) et al. JVST 18 (2000) 3072.JVST 18 (2000) 3072.
Point spread functionPoint spread functionPoint spread functions were convolved with idealized isolated liPoint spread functions were convolved with idealized isolated line and Linene and Line--space arrays space arrays consisting of 100 and 70nm equal lines and spaces. Hollow beam iconsisting of 100 and 70nm equal lines and spaces. Hollow beam illumination increases the llumination increases the average contrast : average contrast : by 9% for 100nm L/S, by 27% for 70nm L/S.by 9% for 100nm L/S, by 27% for 70nm L/S.
Uniform (0Uniform (0--10mrad)10mrad) Hollow (8Hollow (8--10mrad)10mrad)
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1010NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
EO development EO development to achieve high throughputto achieve high throughput
Additional countermeasure for the Additional countermeasure for the space charge effectspace charge effect
Monte Carlo simulation of the projection system Monte Carlo simulation of the projection system have suggested that have suggested that aberrations induced by global spaceaberrations induced by global spacecharge can be as significant as beam blur resulting from charge can be as significant as beam blur resulting from stochastic interactions. stochastic interactions.
In Nikon EPL system:In Nikon EPL system:Stochastic Coulomb effect reductionStochastic Coulomb effect reduction
PLUSPLUSDynamic image correctionDynamic image correction for every subfor every sub--fieldfieldusing using Space Charge Correction GeneratorSpace Charge Correction Generatorin the data post processing software.in the data post processing software.
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1111NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Dynamic Image CorrectionsDynamic Image Corrections
Required Dynamic Image Corrections in EPL:Required Dynamic Image Corrections in EPL:・・・・・・・・ Deflection CorrectionDeflection Correction
-- Image correction of deflection aberrations.Image correction of deflection aberrations.・・・・・・・・ Pattern Dependent CorrectionPattern Dependent Correction
-- Image correction of space charge effects.Image correction of space charge effects.
Dynamic Image Correction accuracyDynamic Image Correction accuracy is directly related is directly related to Stitching and Overlay accuracy.to Stitching and Overlay accuracy.
Deflection Aberrations:Deflection Aberrations:・・ Curvilinear Variable Axis Lens (CVAL) deflection opticsCurvilinear Variable Axis Lens (CVAL) deflection optics
almost eliminates deflection aberrations almost eliminates deflection aberrations which are not correctedwhich are not correctedby dynamic image correction.by dynamic image correction.
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1212NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Calculation procedureCalculation procedureSpace charge effect aberration and Space charge effect aberration and
correctioncorrection--data extractiondata extraction
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1313NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
250µµµµm
250µµµµm
Calculation result of the SCE correctionCalculation result of the SCE correction
(a) Before correction and (b) After correction(a) Before correction and (b) After correction
Before correctionBefore correction After correctionAfter correction
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1414NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
1.Tone and material properties: positive and negative with 2.38%TMAH developer, CA type
2.Process: SLR (in the future: TBD)3.Resolution: less than 100nm, min. aspect ratio:3
(roughness<±±±±5% corresponding toΔΔΔΔCD±±±±10%)4.Sensitivity: 1uC/cm2 at 100kV (Eop)5.Contrast (γγγγ): >106.Dose latitude (% range atΔΔΔΔCD±±±±10%): >±±±±207.Profiles (degree): 87-908.PED stability: >3hr9.PEB sensitivity: <2nm/℃℃℃℃10.Plasma endurance: High11.Adhesion to substrate: High12.Ashing by O2 system plasma: Easy13.Pattern collapse: None14.Outgas during exposure process: None
EB resist requirement and statusEB resist requirement and status
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1515NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
The present EPL system (100kV, 250µm subfield size) could address the mass-production application for below the 50nm node, we have recently investigated the strategy of subfieldwe have recently investigated the strategy of subfield--size size expansion.expansion.
It resulted in a new concept based on the present EPL system, It resulted in a new concept based on the present EPL system, in which a smaller NA leads to both reduction of geometric in which a smaller NA leads to both reduction of geometric aberrations and the Coulomb blur simultaneously.aberrations and the Coulomb blur simultaneously.
New high throughput systemNew high throughput system
Further throughput improvement should be expected! Further throughput improvement should be expected!
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1616NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
In general, smaller NA optics means the larger Coulomb blur described in this formula.
However, we discovered the dependence in the formula on NA became saturated above a certain subfield size, and the blur became independent of NA for small NA.
In this concept, we could use a very small NA achieving very lowgeometric aberrations, while maintaining a high beam current.
New high throughput EPLNew high throughput EPLLarge SF EPL systemLarge SF EPL system
δ=CL 5/4・I 5/6・M
V 3/2・α 3/5・SF 1/2
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1717NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
Small Blur Low geometrical aberration
Low Coulomb blurLow Coulomb blur
High ThroughputHigh Throughput
High sensitivity resist High sensitivity resist
Small overhead timeSmall overhead time
High performance stages for reticle and waferHigh performance stages for reticle and wafer
Throughput enhancement factorsThroughput enhancement factors
NikonNikon’’s missions mission
““IBM and NikonIBM and Nikon”” collaborationcollaboration
Large deflection >5mmLarge deflection >5mm
NikonNikon’’s hopes hope
33DD--CVAL optimizedCVAL optimizedPrecise EOPrecise EO--elements fabricationelements fabrication
> > Optimization of every parameterOptimization of every parameter> Large > Large subfieldsubfield sizesize
OptionsOptions
Nikon NSRNikonK.Okamoto & M. K.Okamoto & M. Sogard Sogard 1818NGL 2001 Future EO (excerption )NGL 2001 Future EO (excerption )
In conclusion, In conclusion, the excellent performance of highthe excellent performance of high--energy EPL has energy EPL has already been confirmed and we have developed a already been confirmed and we have developed a clear EO extensibility strategy. clear EO extensibility strategy.
Nikon/IBM also has several EPL concepts. We are Nikon/IBM also has several EPL concepts. We are mainly developing a volumemainly developing a volume--production machine production machine with a promising throughput >40wph for 300 mm with a promising throughput >40wph for 300 mm wafers.wafers.
Hence we are sure that EPL will be the principle Hence we are sure that EPL will be the principle candidate for the next generations of lithography. candidate for the next generations of lithography.
SummarySummary
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 1
Summary - Critical Issues 11) EPL Mask
- Standardization: Stencil: commercialized firstContinuous membrane: R&D
- Availability: Available from mask suppliers
2) Inspection/Repair/Cleaning of EPL Mask- Cleaning: Useful tool is available.- Inspection/Repair: POC works were done.
Commercialization Phase - Reticle handling: EPL reticle case is available.
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 2
Summary - Critical Issues 2
3) Extendibility
- Modeling results of future optics were introduced.
- Direct measurement result of image blur shows good agreement with simulation. The accuracy of Nikon’s modeling is confirmed.
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 3
Summary - Critical Issues 34) Stitching
- Preliminary data were shown.- Pattern edge modification decreases CD error
Data processing software: AvailableMask: Improving pattern fidelity
5) Wafer heating
Waiting for actual data from EB stepper.
6) Vacuum stage
Actual stages for EB Stepper were described.
NGL Workshop, Pasadena, CA EPL Critical Review 08/29/01 4
Summary -Industry Participation
7) During this year the Semiconductor Industry has really started to participate in EPL technology development.